JPH07252645A - Thin film forming device - Google Patents

Abstract

PURPOSE:To prevent impurities from being incorporated into a thin film vapor deposited on a substrate. CONSTITUTION:A vapor 16 is formed by heating, melting and vaporizing a material 1 for vapor deposition with the irradiation of a laser beam 13 in a vacuum vessel 10. In this case, a part of the vapor 16 is ionized since the vapor 16 is also irradiated with the laser beam 13. The ionized vapor 16 is accelerated by an accelerating means 17 and is deposited together with the non-ionized vapor 16 on the substrate 8. Thus, since the material for vapor deposition is directly heated and melted by the laser beam 13, the impurities produced by melting a crucible 2 or the other constituting material is prevented from being incorporated in the vapor 16 and the high purity film is formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus for forming thin films such as semiconductors and optical films.

[0002]

2. Description of the Related Art FIG. 11 shows a conventional thin film described on page 124, "Thin Film Handbook", edited by Japan Society for the Promotion of Science, Thin Film 131st Committee, published by Ohmsha (Dec. 10, 1983). It is a block diagram of a forming apparatus.

In FIG. 11, 1 is a vapor deposition material, 2 is a crucible filled with the vapor deposition material 1, 3 is a heating filament that emits an electron beam by being electrically heated, and the crucible 2 is heated to deposit the vapor deposition material 1. Dissolve and evaporate. Reference numeral 4 is the vapor of the evaporated vapor deposition material 1, and 5 is an ionizing filament that emits an electron beam by applying a DC voltage between it and a grid 6, which will be described later, and it partially ionizes the vapor 4. Reference numeral 6 is a grid that draws out the electrons emitted from the ionized filament 5.

Reference numeral 7 is a heat shield plate which suppresses radiant heat from the heating filament 3 and ionization filament 5, and 8 is a substrate which is arranged above the crucible 2 so as to face it, and a thin film of a vapor deposition material is formed on the substrate. Reference numeral 9 is a rotating mechanism for holding and rotating the substrate 8, 10 is a vacuum chamber, and 11 is a vacuum pump for evacuating the vacuum chamber 10.

Next, the operation will be described. In FIG. 11, the vacuum chamber 10 is evacuated by the vacuum pump 11. When the heating filament 3 is electrically heated and a DC voltage is applied between the heating filament 3 and the crucible 2, the heating filament 3 emits an electron beam to heat and vaporize the vapor deposition material 1. 4 occurs.

Further, the ionizing filament 5 and the grid 6 are heated while the ionizing filament 5 is electrically heated.
When a direct current voltage is applied between and, an electron beam is emitted from the ionized filament 5. This electron beam collides with the steam 4 and a part of the steam 4 is ionized. The ionized vapor 4 is accelerated between the ground potential substrate 8 and the positive potential crucible 2.

Then, the ionized vapor 4 reaches the substrate 8 together with the other non-ionized vapor 4 to form a thin film on the substrate 8. Also, during the formation of the thin film, the substrate 8
Is rotated at about 10 to 100 rpm by the rotating mechanism 9 to make the film thickness uniform in the rotating direction. Further, the heat shield plate 7 suppresses radiant heat from the crucible 2 and both filaments 3, 5.

[0008]

Since the conventional thin film forming apparatus is constructed as described above, the heating filament,
Because the ionizing filament and grid become hot,
Part of each constituent material evaporates and mixes into the vapor of the vapor deposition material as an impurity. Further, during melting of the vapor deposition material, impurities are mixed into the vapor deposition material from the constituent material of the crucible, and the impurities are evaporated and mixed into the vapor of the vapor deposition material. Therefore, there is a problem that it is difficult to obtain a high-purity film.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a thin film forming apparatus which prevents impurities from being mixed into the vapor of a vapor deposition material.

[0010]

According to a first aspect of the present invention, a vapor deposition material is heated and vaporized in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is converted into another vapor. At the same time, in a thin film forming apparatus for vapor deposition on a substrate, laser light output from a laser oscillation device is irradiated from an irradiation means to heat a vapor deposition material.

According to a second aspect, in the first aspect, the irradiation position of the laser beam onto the vapor deposition material is changed by controlling the irradiation means.

According to a third aspect of the present invention, the density of the laser light applied to the peripheral portion of the vapor deposition material is made higher than the density of the laser light applied to the central portion.

According to a fourth aspect of the present invention, the vapor deposition material is heated and vaporized in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor deposited on the substrate together with other vapors. In the thin film forming apparatus described above, the laser oscillator irradiates the vapor deposition material with laser light from the irradiation means to heat the vapor deposition material, and the vapor deposition material irradiated with the laser light and the laser light irradiation means provided in the vacuum chamber. Between
A shield plate is provided which has a hole through which laser light can pass and which prevents vapor from moving toward the irradiation means.

According to a fifth aspect of the present invention, the vapor deposition material is heated and vaporized in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor deposited on the substrate together with other vapors. In the thin film forming apparatus described above, the vapor deposition material is provided with a hole opened toward the substrate, and the vapor deposition material in the hole is irradiated with the laser light output from the laser oscillation device to heat the vapor deposition material.

According to a sixth aspect of the present invention, the vapor deposition material is heated and vaporized in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor-deposited on the substrate together with other vapors. In the thin film forming apparatus, the first laser light emitted from the first laser oscillator is irradiated onto the vapor deposition material from the first irradiation means to heat the vapor deposition material, and the second laser oscillator outputs the second laser light. The second irradiation means irradiates the vapor of the vapor deposition material with the second laser beam to ionize a part of the vapor.

According to a seventh aspect of the present invention, the vapor deposition material is heated and vaporized in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor-deposited on the substrate together with other vapors. In the thin film forming apparatus described above, the laser oscillating device outputs the first laser light and the second laser light, and the first irradiating means irradiates the vapor deposition material to heat the second material. The second irradiation means irradiates the vapor of the vapor deposition material with the second laser beam to ionize a part of the vapor.

According to an eighth aspect of the present invention, in the sixth or seventh aspect, the second laser light emitted to the vapor of the vapor deposition material is reflected by a mirror, and the reflected second laser light is emitted to the vapor of the vapor deposition material again. To do.

[0018]

In the first aspect, since the vapor deposition material is irradiated with the laser light output from the laser oscillator to heat the vapor deposition material, only the vapor deposition material becomes vapor. Further, since the laser light is also applied to the generated vapor, a part of the vapor is ionized.

In the second aspect, since the irradiation position of the laser beam on the vapor deposition material is changed, the vapor deposition material is melted over a wide range.

According to the third aspect of the present invention, the density of the laser light applied to the peripheral portion of the vapor deposition material is made higher than the density of the laser light applied to the central portion. Equalize the distribution.

In the fourth aspect, since the vapor deposition material is irradiated with the laser light output from the laser oscillator to heat the vapor deposition material, only the vapor deposition material becomes vapor. Further, since the generated vapor is also irradiated with the laser light, a part thereof is ionized. Further, the shield plate disposed between the vapor deposition material and the laser light irradiation means prevents vapor from moving toward the irradiation means.

In the present invention, the vapor deposition material is provided with a hole opened toward the substrate, and the vapor deposition material in the hole is heated by irradiating it with laser light. it can.

In the sixth aspect, the vapor deposition material is irradiated with the first laser beam output from the first laser oscillator to heat the vapor deposition material, and the second laser beam output from the second laser oscillator is vapor deposited. The vapor of the material is irradiated to ionize a part of the vapor.

In the present invention, the laser oscillator outputs the first laser light and the second laser light, the first laser light heats the vapor deposition material to generate vapor, and the second laser light is emitted. Is irradiated to the vapor of the vapor deposition material to partially ionize it.

In the eighth aspect, the second laser beam applied to the vapor of the vapor deposition material according to the sixth aspect or the seventh aspect is reflected by a mirror, and the reflected second laser beam is applied to the vapor of the vapor deposition material again. Therefore, a part of the steam is ionized.

[0026]

【Example】

Example 1. FIG. 1 is a block diagram showing an embodiment of the present invention. In FIG. 1, 1, 2, 8 to 11 are the same as the conventional one. Reference numeral 12 denotes a laser oscillation device including a YAG laser device that outputs a laser beam 13, and irradiates the vapor deposition material 1 with the laser beam 13 to heat it. Reference numeral 14 is an optical fiber for transmitting the laser light 13 output from the laser oscillator 12, and 15 is an irradiation means connected to the tip of the optical fiber 14 in the vacuum chamber 10. The laser light 13 is collimated toward the vapor deposition material 1. Is emitted.

Reference numeral 16 is a vapor generated by evaporation of the vapor deposition material 1, and 17 is an accelerating means comprising a DC power source, which applies a DC voltage between the crucible 2 and the substrate 8. Reference numeral 18 denotes a shield plate provided with holes 18 a, which is arranged between the crucible 2 filled with the vapor deposition material 1 and the irradiation means 15 so that the vapor 16 is irradiated with the vapor 16.
Prevent moving to 5. 19 is a shield plate 18
It is a cylindrical body that is fixed to the hole 18a and is formed so that the laser light 13 can pass therethrough. As a result, the laser light 13 passes through the inside of the cylindrical body 19 and is irradiated onto the vapor deposition material 1, and at the same time, the vapor 16 is prevented from adhering to the irradiation means 15.

Next, the operation will be described. In FIG. 1, the inside of the vacuum chamber 10 is evacuated by a vacuum pump 11, and then the laser beam 13 output from the laser oscillator 12 is irradiated from the irradiation means 15 onto the upper surface of the vapor deposition material 1 in the crucible 2. As a result, the vapor deposition material 1 is heated and melted by the laser light 13 and evaporated, and the vapor 16 is generated. At this time, the vapor 16 above the vapor deposition material 1 is also irradiated with the laser light 13 emitted from the irradiation means 15, so that a part of the vapor is excited or ionized.

When the vapor deposition material 1 is a refractory metal such as Ti,
The output of the laser light 13 needs to be about 2 KW and can be transmitted through the optical fiber 14. The ionized vapor 16 is accelerated by the acceleration means 17 and reaches the substrate 8 together with other non-ionized vapor 16 to form a thin film. Since the laser light 13 is directly applied to the vapor deposition material 1,
Since only the vapor deposition material 1 is locally heated, a high-purity thin film can be formed.

Further, the vapor 16 is blocked by the shield plate 18 from moving toward the irradiation means 15. Therefore,
Since it is possible to prevent the vapor 16 from adhering to the irradiation means 15, it is possible to reduce a decrease in the irradiation intensity of the laser light 13.

In the first embodiment described above, the YAG laser device is used to generate and ionize the vapor 13, but a high power laser such as an excimer laser, a carbon dioxide gas laser, an argon laser, a yoso laser or a copper vapor laser is used alone. Alternatively, a plurality of units may be used.

Example 2. FIG. 2 is a configuration diagram showing another embodiment. In FIG. 2, reference numeral 20 denotes a window provided in the vacuum chamber 10 so that the laser beam 13 can pass therethrough.
In this way, the irradiation means 15 is arranged outside the vacuum chamber 10, and the vapor deposition material 1 is irradiated with the laser light 13 through the window 20 to generate vapor 16 of the vapor deposition material 1 and a part of the vapor 16 is generated. Ionized and accelerated means 17
Is accelerated to reach the substrate 8. Further, it is possible to prevent the vapor 16 from adhering to the irradiation means 15. In this case, the window 20
Since the vapor 16 adheres to the inside of the, it is possible to prevent the irradiation intensity of the laser light 13 from being lowered by regularly cleaning or replacing the window 20.

Example 3. FIG. 3 is a configuration diagram showing still another embodiment. In FIG. 3, reference numeral 21 denotes a position control mechanism for controlling the direction of the laser light 13 of the irradiation means 15, which scans the vapor deposition material 1 with the laser light 13. Reference numeral 22 is a moving mechanism that rotates the crucible 2 or moves the crucible 2 in the vertical direction. Reference numeral 23 denotes a cylindrical body provided at the emission end of the irradiation means 15 so that the laser light 13 of the irradiation means 15 can pass therethrough, and prevents vapor 16 from adhering to the irradiation means 15. In FIG.
The position control mechanism 21 controls the irradiation means 15 to scan the irradiation of the vapor deposition material 1 with the laser light 13. As a result, the vapor deposition material 1 can be efficiently evaporated, and part of the vapor 16 is ionized and accelerated by the acceleration means 17 to reach the substrate 8. In addition, the vapor deposition material 1 is moved by the moving mechanism 22.
The same effect can be expected by rotating or moving the.

Example 4. FIG. 4 is a plan view showing a main part of still another embodiment. In FIG. 4, reference numeral 24 denotes a high density portion for scanning by increasing the density of the laser light 13, which is a peripheral portion of the vapor deposition material 1, that is, a side close to the crucible 2. Reference numeral 25 denotes a low density portion for scanning by making the density of the laser light 13 smaller than that of the high density portion 24, and is on the center side of the upper surface of the vapor deposition material 1.

As described above, the laser light 1 for irradiating the central portion with the density of the laser light 13 for irradiating the peripheral portion of the vapor deposition material 1 is used.
By making the density higher than 3, the heat dissipation on the side of the crucible 2 which is easy to cool is compensated, so that the vapor deposition material 1 is heated almost uniformly, so that the density of the generated vapor 16 can be made substantially uniform. Further, since the vapor 16 is irradiated with the laser beam 13, a part of the vapor 16 is ionized and accelerated by the acceleration means 17 to reach the substrate 8. Therefore, it becomes easy to make the film thickness deposited on the substrate 8 uniform.

The density of the laser beam 13 can be adjusted by adjusting the output of the laser oscillator 12. Further, the output may be fixed and the irradiation time of the laser beam 13 to the vapor deposition material 1 may be adjusted. Furthermore, the scanning interval d may be set larger in the central portion than in the peripheral portion of the vapor deposition material 1.

Example 5. FIG. 5 is a configuration diagram showing still another embodiment. In FIG. 5, reference numerals 26 and 27 denote shield plates provided with holes 26a and 27a through which the laser beam 13 can pass, and the crucible 2 filled with the vapor deposition material 1 and the irradiation means 1.
5 to prevent the vapor 16 from moving toward the irradiation means 15. The laser beam 13 is applied to each of the cylinders 26, 2
By irradiating the vapor deposition material 1 through the holes 26a and 27a of No. 7, the vapor of the vapor deposition material 1 is generated and the laser light 13 is radiated to the vapor 16, so that a part of the vapor is ionized and the accelerating means. It is accelerated at 17 and reaches the substrate 8.

Example 6. FIG. 6 is a configuration diagram showing still another embodiment. In FIG. 6, reference numeral 28 denotes a vapor deposition material filled in the crucible 2 and has a hole 28 a opened toward the substrate 8.
And a lateral hole 28b communicating with the hole 28a. The laser beam 13 of the irradiation means 15 is irradiated from the hole 28b to heat and melt the vapor deposition material 28 in the hole 28a.
As a result, the vapor 16 of the vapor deposition material 28 generated is generated by the holes 2
The board 8 can be guided to the board 8a and can be flown. Then, since the laser light 13 is also applied to the vapor 16 generated in the hole 28a, a part of the vapor is ionized and accelerated by the acceleration means 17 to reach the substrate 8. Since the steam 16 can have directivity,
Efficient deposition can be performed on the barrier film for semiconductor wiring in which the substrate 8 has fine contact holes with a high aspect ratio.

Example 7. FIG. 7 is a configuration diagram showing still another embodiment. In FIG. 7, reference numeral 29 is a vapor deposition material filled in the crucible 2 and has a hole 29 a opened toward the substrate 8.
Is provided. The irradiation means 15 is arranged obliquely above the crucible 2 so that the laser light 13 can emit holes 29 a in the vapor deposition material 29.
The inside can be irradiated. In such a structure, by irradiating the hole 29a of the vapor deposition material 29 with the laser light 13, the vapor deposition material 29 is melted and evaporated. Since the generated vapor 16 is also irradiated with the laser light 13, a part of the vapor is ionized and accelerated by the acceleration means 17 to reach the substrate 8.

In this case, the generated vapor 16 is guided to the hole 29a and can be directed to the substrate. Further, the vapor deposition material 29 is rotated by the moving mechanism 22 or is moved in the vertical direction, so that the vapor deposition material 2
9 can be used extensively. The same effect can be expected even if the opened hole 29a is a hole that penetrates the vapor deposition material 29 in the vertical direction.

Example 8. FIG. 8 is a block diagram showing still another embodiment. In FIG. 8, 30 is a laser oscillation device that outputs a laser beam 31, 32 is an optical fiber that transmits the laser beam 31, and 33 is an optical fiber 3 in the vacuum chamber 10.
The vapor 1 of the vapor deposition material 1 is irradiated by the irradiation means connected to the tip of the vapor 2.
The collimated laser light 31 is emitted toward the laser beam 6. Reference numeral 34 denotes a cylindrical body provided at the emission end of the irradiation means 33, which prevents the vapor 16 from adhering to the irradiation means 33. In the above structure, the vapor deposition material 1 is irradiated with the laser light 13 emitted from the irradiation means 15 to generate the vapor 16. And
The vapor 16 is irradiated with the laser light 31 emitted from the irradiation unit 33 to ionize a part of the vapor 16, and the acceleration unit 17
Is accelerated to vapor deposit on the substrate 8.

Since the laser oscillator 30 for ionizing a part of the vapor 16 is provided separately from the laser oscillator 12 for heating and melting the vapor deposition material 1, the ionization can be more effectively performed. As the laser oscillator 30, a YAG laser,
A laser light source such as an excimer laser, a carbon dioxide gas laser, an argon gas laser, a yoso laser, or a copper vapor laser can be used.

Example 9. FIG. 9 is a configuration diagram showing still another embodiment. In FIG. 9, a laser beam 31 is a laser oscillator 1 that outputs a laser beam 13 for heating the vapor deposition material 1.
It is a spectrum output from No. 2. Other configurations are similar to those of the eighth embodiment. Even with such a configuration, the same effect as that of the eighth embodiment can be expected.

Example 10. FIG. 10 is a configuration diagram showing still another embodiment. In FIG. 10, 35 is steam 16
The laser beam 31 radiated to the vapor 16 is reflected by a mirror arranged to face the irradiation means 33 with the passage of
The steam 16 is irradiated with the laser light 31 again. 36 is steam 1
The laser light 31 is reflected again by the mirror arranged so as to face the mirror 35 with the passage 6 interposed therebetween, and the steam 16 is irradiated with the laser light 31. Other configurations are similar to those of the eighth embodiment. According to such a configuration, since the ionization is multiplexed, the ionization can be made more effective.

Example 11. Example 3 and Example 6-
In the tenth embodiment, the irradiation means 15, 33 are arranged inside the vacuum chamber 10. However, both of them are arranged outside the vacuum chamber 10 as shown in the second embodiment. The same effect can be expected.

[0046]

According to the first aspect of the present invention, since the vapor deposition material is directly irradiated with laser light to heat the vapor deposition material, only the vapor deposition material becomes vapor, so that it is possible to prevent impurities from being mixed into the vapor. Further, since the generated vapor is also irradiated with the laser light, a part of the vapor can be ionized.

According to a second aspect of the present invention, since the irradiation position of the laser beam on the vapor deposition material is changed in the first aspect, the vapor deposition material can be melted over a wide range.

According to a third aspect of the present invention, the density of the laser light applied to the peripheral portion of the vapor deposition material is made higher than the density of the laser light applied to the central portion, so that heat dissipation from the peripheral portion of the vapor deposition material is achieved. Since the temperature distribution in the evaporation surface is equalized by compensation, the density of vapor generated from the evaporation surface can be equalized.

According to the present invention, since the vapor deposition material is directly irradiated with laser light for heating, only the vapor deposition material becomes vapor.
It is possible to prevent impurities from being mixed into the steam. Further, since the generated vapor is also irradiated with the laser light, a part of the vapor can be ionized. Further, since the shield plate is arranged between the vapor generation portion of the vapor deposition material and the laser light irradiation means, the vapor adheres to the irradiation means and is irradiated in order to prevent the vapor from moving toward the irradiation means. It is possible to reduce the decrease in strength.

According to a fifth aspect of the present invention, the vapor deposition material is provided with a hole opened toward the substrate, and the vapor deposition material in the hole is irradiated with laser light to heat the vapor deposition material. Therefore, the generated vapor is directed toward the substrate. You can fly it. Moreover, since the vapor generated in the hole is irradiated with the laser beam, a part of the vapor can be ionized.

According to a sixth aspect of the present invention, the vapor deposition material is irradiated with the first laser beam output from the first laser oscillator to heat the vapor deposition material,
Since the vapor of the vapor deposition material is irradiated with the second laser light output from the second laser oscillator to partially ionize the vapor, it is possible to prevent impurities from being mixed into the vapor.
It is also possible to ionize part of the steam.

According to a seventh aspect of the present invention, the laser oscillator outputs the first laser beam and the second laser beam, the vapor deposition material is irradiated with the first laser beam and heated to vaporize the second laser beam. Since the vapor of the material is irradiated to partially ionize the vapor, it is possible to prevent impurities from being mixed in the vapor and also to ionize the vapor partially.

According to an eighth aspect, in the sixth or seventh aspect, the second laser light radiated to the vapor of the vapor deposition material is reflected by the mirror, and the reflected second laser light is radiated to the vapor again. Part of the steam can be efficiently ionized.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the present invention.

FIG. 3 is a configuration diagram showing a third embodiment of the present invention.

FIG. 4 is a plan view showing Embodiment 4 of the present invention.

FIG. 5 is a configuration diagram showing a fifth embodiment of the present invention.

FIG. 6 is a configuration diagram showing a sixth embodiment of the present invention.

FIG. 7 is a configuration diagram showing a seventh embodiment of the present invention.

FIG. 8 is a configuration diagram showing an eighth embodiment of the present invention.

FIG. 9 is a configuration diagram showing a ninth embodiment of the present invention.

FIG. 10 is a configuration diagram showing an embodiment 10 of the present invention.

FIG. 11 is a configuration diagram showing a conventional thin film forming apparatus.

[Explanation of symbols]

 1, 28, 29 Vapor deposition material 2 Crucible 8 Substrate 10 Vacuum tank 12, 30 Laser oscillator 13, 31 Laser light 15, 33 Irradiation means 16 Vapor 17 Accelerating means 18, 26, 27 Shield plate 28, 29 Vapor deposition material 28a, 29a Hole 35, 36 mirror

Claims (8)

[Claims] 1. A vapor deposition material is heated and evaporated in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor-deposited on a substrate together with other vapors. In the thin film forming apparatus, the thin film forming apparatus is characterized in that a laser beam output from a laser oscillator is irradiated from an irradiation unit to heat the vapor deposition material. 2. The thin film forming apparatus according to claim 1, wherein the irradiation position of the laser beam onto the vapor deposition material is changed by controlling the irradiation means. 3. The thin film forming apparatus according to claim 2, wherein the density of the laser light applied to the peripheral portion of the vapor deposition material is made higher than the density of the laser light applied to the central portion. 4. A vapor deposition material is heated and evaporated in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor-deposited on a substrate together with other vapors. In the thin film forming apparatus, a laser oscillator irradiates the vapor deposition material with laser light from an irradiation means to heat the vapor deposition material, and the vapor deposition material irradiated with the laser light and the laser provided in the vacuum chamber. A thin film forming apparatus, characterized in that a shield plate having a hole through which the laser light can pass is provided between the light irradiation means and the vapor to prevent the vapor from moving toward the irradiation means. 5. A vapor deposition material is heated and evaporated in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor-deposited on a substrate together with other vapors. In the thin film forming apparatus, a hole opened in the direction of the substrate is provided in the vapor deposition material, and laser light output from a laser oscillation device is irradiated from the irradiation means to the vapor deposition material in the hole to heat the vapor deposition material. Thin film forming apparatus. 6. A vapor deposition material is heated and evaporated in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor-deposited on a substrate together with other vapors. In the thin film forming apparatus, the first laser light emitted from the first laser oscillator is irradiated onto the vapor deposition material from the first irradiation means to heat the vapor deposition material, and the second laser oscillator outputs the second laser light. A thin film forming apparatus characterized by irradiating the vapor of the vapor deposition material with laser light from a second irradiation means to ionize a part of the vapor. 7. A vapor deposition material is heated and vaporized in a vacuum chamber, a part of the vapor of the vapor deposition material generated is ionized and accelerated, and the ionized vapor is vapor-deposited on a substrate together with other vapors. In the thin film forming apparatus, the laser oscillator outputs a first laser beam and a second laser beam,
The vapor deposition material is irradiated with the first laser light from the first irradiation means to heat the vapor deposition material and the second laser light is irradiated to the vapor of the vapor deposition material from the second irradiation means. Thin film forming apparatus characterized by ionizing a portion. 8. The vapor of the vapor deposition material according to claim 6 or 7, wherein the second laser light irradiated onto the vapor of the vapor deposition material is reflected by a mirror, and the reflected second laser light is irradiated onto the vapor of the vapor deposition material again. A thin film forming apparatus characterized by: