JPH0342034Y2 - - Google Patents

Info

Publication number
JPH0342034Y2
JPH0342034Y2 JP1749285U JP1749285U JPH0342034Y2 JP H0342034 Y2 JPH0342034 Y2 JP H0342034Y2 JP 1749285 U JP1749285 U JP 1749285U JP 1749285 U JP1749285 U JP 1749285U JP H0342034 Y2 JPH0342034 Y2 JP H0342034Y2
Authority
JP
Japan
Prior art keywords
filament
crucible
metal vapor
thin film
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1749285U
Other languages
Japanese (ja)
Other versions
JPS61133558U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1749285U priority Critical patent/JPH0342034Y2/ja
Publication of JPS61133558U publication Critical patent/JPS61133558U/ja
Application granted granted Critical
Publication of JPH0342034Y2 publication Critical patent/JPH0342034Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 〔産業上の利用分野〕 この考案は金属蒸気を基板に蒸着させる薄膜形
成装置に関するものである。
[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to a thin film forming apparatus for depositing metal vapor onto a substrate.

〔従来の技術〕[Conventional technology]

第2図は従来の薄膜形成装置の断面を示したも
のであり、図において、1はるつぼ、2はるつぼ
1内にあつて溶融される金属、3はるつぼ1の上
部にあけられ溶融された金属2が噴出する孔、4
は孔3から噴出する金属蒸気、5はるつぼ1を加
熱するフイラメント、6はフイラメント5に電流
を流して高温にし電子を放出させる交流電源、7
は交流電源6によつて放出された電子がるつぼ1
に衝突するようにるつぼ1の電位がフイラメント
5の電位より正のバイアス電圧がかゝつている第
1の直流電源、8は電子を放出するイオン化フイ
ラメント、9はイオン化フイラメント8から放出
された電子を加速するグリツド、10はイオン化
フイラメント8を発熱させる交流電源、11はグ
リツド9に対してイオン化フイラメント8を負の
電位に保つ第2の直流電源、12はイオン化した
金属蒸気4を加速する加速電極、13は表面に金
属薄膜を蒸着させる基板、14は蒸着膜、15は
加速電極12にグリツド9より負の電位を与える
第3の直流電圧、16はるつぼ1の熱放射を防ぐ
熱シールド板、17は真空槽である。
Figure 2 shows a cross section of a conventional thin film forming apparatus. In the figure, 1 is a crucible, 2 is a metal placed in the crucible 1 to be melted, and 3 is a metal placed in the upper part of the crucible 1 to be melted. Hole from which metal 2 spews out, 4
5 is a filament that heats the crucible 1; 6 is an AC power source that causes current to flow through the filament 5 to raise it to a high temperature and emit electrons; 7
is a crucible 1 in which electrons are emitted by an AC power source 6
A first DC power source has a bias voltage that makes the potential of the crucible 1 more positive than the potential of the filament 5 so that the potential of the crucible 1 collides with the filament 5; 8 is an ionizing filament that emits electrons; An accelerating grid; 10 is an AC power source that causes the ionizing filament 8 to generate heat; 11 is a second DC power source that keeps the ionizing filament 8 at a negative potential with respect to the grid 9; 12 is an accelerating electrode that accelerates the ionized metal vapor 4; 13 is a substrate on which a metal thin film is deposited; 14 is a deposited film; 15 is a third DC voltage that gives the acceleration electrode 12 a more negative potential than the grid 9; 16 is a heat shield plate that prevents heat radiation from the crucible 1; 17 is a vacuum chamber.

第2図において、フイラメント5は交流電源6
により加熱された熱電子が放出されるが、第1の
直流電源7によつてるつぼ1に与えられた正電圧
により熱電子がるつぼ1に衝突してるつぼ1を加
熱する。るつぼ1内の金属2は蒸発し、孔3より
真空中に噴出する。噴出された金属蒸気4はフイ
ラメント8から飛び出した電子がグリツド9を通
過して金属蒸気4に当つて電子をたゝき出しプラ
ス電荷を持つたイオンになる。このプラスイオン
は加熱電極12によつて加速され基板13に蒸着
し蒸着膜が出来る。
In FIG. 2, the filament 5 is connected to the AC power source 6.
The heated electrons are emitted, but due to the positive voltage applied to the crucible 1 by the first DC power source 7, the thermoelectrons collide with the crucible 1 and heat the crucible 1. The metal 2 in the crucible 1 evaporates and is ejected from the hole 3 into the vacuum. In the ejected metal vapor 4, electrons ejected from the filament 8 pass through the grid 9 and hit the metal vapor 4, ejecting electrons and becoming positively charged ions. These positive ions are accelerated by the heating electrode 12 and deposited on the substrate 13 to form a deposited film.

〔考案が解決しようとする問題点〕[Problem that the invention attempts to solve]

従来の薄膜形成装置は以上のように構成されて
いるので、噴出する金属蒸気4のうちイオン化さ
れない蒸気の一部は加速電極12による力を受け
ないため初速を失つて拡散し矢印に示すようにフ
イラメント5近傍にまわり込む。これらの蒸気は
フイラメント5から流出する電子にたゝき出され
てプラスイオンになり、交流電源6の……フイラ
メント5の交流電源6を安定させることが出来る
薄膜形成装置を得ることを目的とする。
Since the conventional thin film forming apparatus is configured as described above, a part of the vapor that is not ionized in the ejected metal vapor 4 is not subjected to the force of the accelerating electrode 12, so it loses its initial velocity and diffuses as shown by the arrow. It goes around the vicinity of filament 5. These vapors are extracted by electrons flowing out from the filament 5 and become positive ions, and the purpose is to obtain a thin film forming device that can stabilize the AC power source 6 of the filament 5. .

〔問題点を解決するための手段〕[Means for solving problems]

この考案に係る薄膜形成装置は第1図に示すよ
うにるつぼの孔側をシールドで囲んで噴出した金
属蒸気がフイラメント側にまわり込まないように
したものである。
In the thin film forming apparatus according to this invention, as shown in FIG. 1, the hole side of the crucible is surrounded by a shield to prevent ejected metal vapor from entering the filament side.

〔作用〕[Effect]

この考案における薄膜形成装置はシールドによ
り金属蒸気がフイラメント側にまわり込まないた
め蒸着効率が向上するばかりでなく、フイラメン
トの電源が安定する。
The thin film forming apparatus according to this invention not only improves vapor deposition efficiency but also stabilizes the power source of the filament because the metal vapor does not enter the filament side due to the shield.

〔考案の実施例〕[Example of idea]

以下、この考案の一実施例を図について説明す
る。第1図において、1〜17迄は従来の実施例
と同一のものなので説明は省略する。
An embodiment of this invention will be described below with reference to the drawings. In FIG. 1, 1 to 17 are the same as those in the conventional embodiment, so their explanations will be omitted.

18はるつぼ1の孔3側に取りつけられた深皿
形のシールドである。上記の深皿形のシールド1
8によつて噴出した金属蒸気4は、フイラメント
5側にまわり込むことなくイオン化が行われるグ
リツド9に送りこまれる。
18 is a deep dish-shaped shield attached to the hole 3 side of the crucible 1. Deep dish-shaped shield 1 above
The metal vapor 4 ejected by the metal vapor 8 is sent to the grid 9 where ionization is performed without going around to the filament 5 side.

〔考案の効果〕[Effect of idea]

以上のように、この考案によれば、金属蒸気が
効率よく蒸着出来るようにシールドを構成し、且
つ金属蒸気がフイラメントにまわりこまないよう
に設けられているので、電源を安定に保ち高品位
の薄膜が得られる効果がある。
As described above, according to this invention, the shield is configured so that metal vapor can be efficiently deposited, and is also provided to prevent metal vapor from getting around the filament, so the power source can be kept stable and high quality can be achieved. This has the effect of producing a thin film.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この考案の一実施例による薄膜形成
装置を示す断面図、第2図は従来の薄膜形成装置
を示す断面図である。図において、1はるつぼ、
3は孔、4は金属蒸気、5はフイラメント、17
は真空槽、18はシールドである。 なお、各図中、同一符号は同一又は相当部分を
示す。
FIG. 1 is a sectional view showing a thin film forming apparatus according to an embodiment of this invention, and FIG. 2 is a sectional view showing a conventional thin film forming apparatus. In the figure, 1 is a crucible,
3 is a hole, 4 is a metal vapor, 5 is a filament, 17
is a vacuum chamber, and 18 is a shield. In each figure, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 真空槽、この真空槽の内部に配設されたフイラ
メント、このフイラメントによつて加熱され金属
蒸気を上部にあけられた孔から噴出するるつぼ、
および上記孔と上記フイラメントの間に位置し、
上記孔から噴出する金属蒸気が上記フイラメント
の近傍に飛来するのを防ぐシールドを備えた薄膜
形成装置。
a vacuum chamber, a filament disposed inside the vacuum chamber, a crucible that is heated by the filament and ejects metal vapor from a hole in the top;
and located between the hole and the filament,
A thin film forming apparatus comprising a shield that prevents metal vapor ejected from the hole from flying near the filament.
JP1749285U 1985-02-08 1985-02-08 Expired JPH0342034Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1749285U JPH0342034Y2 (en) 1985-02-08 1985-02-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1749285U JPH0342034Y2 (en) 1985-02-08 1985-02-08

Publications (2)

Publication Number Publication Date
JPS61133558U JPS61133558U (en) 1986-08-20
JPH0342034Y2 true JPH0342034Y2 (en) 1991-09-03

Family

ID=30505245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1749285U Expired JPH0342034Y2 (en) 1985-02-08 1985-02-08

Country Status (1)

Country Link
JP (1) JPH0342034Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104695A (en) * 1989-09-08 1992-04-14 International Business Machines Corporation Method and apparatus for vapor deposition of material onto a substrate

Also Published As

Publication number Publication date
JPS61133558U (en) 1986-08-20

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