JPS60209246A - Photochemical reaction device - Google Patents

Photochemical reaction device

Info

Publication number
JPS60209246A
JPS60209246A JP6341184A JP6341184A JPS60209246A JP S60209246 A JPS60209246 A JP S60209246A JP 6341184 A JP6341184 A JP 6341184A JP 6341184 A JP6341184 A JP 6341184A JP S60209246 A JPS60209246 A JP S60209246A
Authority
JP
Japan
Prior art keywords
reaction
ultraviolet
reaction vessel
photochemical reaction
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6341184A
Other languages
Japanese (ja)
Other versions
JPS6250553B2 (en
Inventor
Shinji Sugioka
晋次 杉岡
Shinji Suzuki
信二 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP6341184A priority Critical patent/JPS60209246A/en
Publication of JPS60209246A publication Critical patent/JPS60209246A/en
Publication of JPS6250553B2 publication Critical patent/JPS6250553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488Protection of windows for introduction of radiation into the coating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the deposition of the formed material on an ultraviolet transmissive window when the photochemical reaction is carried out by utilizing the mercury-sensitized reaction and to eliminate the hindrance to the transmission of ultraviolet rays by providing a mesh member which can be cooled in the vicinity of the transmissive window in a reaction vessel. CONSTITUTION:A substrate 4 is arranged in a reaction vessel 1 having an ultraviolet transmissive window 14, and a photoreactive gas (e.g., SiH4) is introduced from an introducing hole 11. Said gas is allowed to react photochemically with an ultraviolet ray source 3 at the outside of the reaction vessel 1, and the reaction product is deposited or vapor-deposited on the substrate 4. In said photochemical reaction device, a mesh member 5 which can be cooled is provided in the vicinity of the transmissive window 14 in the reaction vessel 1. The formed material is not deposited on the ultraviolet transmissive window when the photochemical reaction is carried out by utilizing the mercury-sensitized reaction, and the transmission of ultraviolet rays is never hindered.

Description

【発明の詳細な説明】 本発明は光化学反応装置に関するものである。[Detailed description of the invention] The present invention relates to a photochemical reaction device.

最近、電子複写機の感光ドラムや太陽電池などに使用さ
れるアモルファスシリコンの蒸着膜の形成方法が研究さ
れている。また、他方では各種の絶縁膜や保瞳膜の形成
にも蒸着方法が利用され、用途によっては種々の蒸着方
法が提案されているが、このなかでも光化学反応を利用
した光化学蒸着方法や光化学堆積方法は被膜形成速度が
著しく早く、大面積部にも均一な被膜を形成できるなど
の利点を有し、最近特に注目を集めている。
Recently, research has been carried out on methods of forming vapor deposited amorphous silicon films used in photosensitive drums of electronic copying machines, solar cells, and the like. On the other hand, vapor deposition methods are also used to form various insulating films and pupil retention films, and various vapor deposition methods have been proposed depending on the application. This method has the advantage of being extremely fast in forming a film and being able to form a uniform film even over a large area, and has recently attracted particular attention.

従来の光化学反応を利用した化学蒸着もしくは堆積方法
は、紫外線をよく透過する窓を有する容器内に基板を配
置し、光反応用ガスを流すとともに、容器外から、紫外
線光源で当該ガスを光化学反応せしめ、その反応生成物
を基板に蒸着や堆積せしめるものである。そして、アモ
ルファスシリコンを生成するための光反応性ガスとして
、安価で手軽に入手可能な5iHnを使用するときは、
波長が254nmや185nmの紫外線を照射しても反
応が十分に進行しないために水銀を添加して水銀増感反
応によって5iHnを迅速に分解させており、この方法
は、前述の通りの大きな利点を有するが、反面、反応生
成物が紫外線の透過窓にも堆積してしまい、紫外線の透
過を大きく阻害する欠点があることが分った。このため
従来は、透過窓にアルゴンなどの不活性ガスをフローさ
せたり、油を塗布したりして透過窓に蒸着もしくは堆積
することを抑えていたが、これらの対策では十分な効果
を得ることができなかった。
In conventional chemical vapor deposition or deposition methods that utilize photochemical reactions, a substrate is placed inside a container with a window that transmits ultraviolet rays, a gas for photoreaction is passed through the container, and the gas is subjected to a photochemical reaction using an ultraviolet light source from outside the container. The reaction product is vapor-deposited or deposited on the substrate. When using 5iHn, which is inexpensive and easily available, as a photoreactive gas for producing amorphous silicon,
Because the reaction does not proceed sufficiently even when irradiated with ultraviolet light with a wavelength of 254 nm or 185 nm, mercury is added to rapidly decompose 5iHn through a mercury sensitization reaction. This method has the major advantages as mentioned above. However, on the other hand, it has been found that the reaction product also accumulates on the ultraviolet light transmission window, which significantly inhibits the transmission of ultraviolet light. For this reason, in the past, vapor deposition or deposition on the transmission window was suppressed by flowing an inert gas such as argon or applying oil to the transmission window, but these measures were not effective enough. I couldn't do it.

そこで本発明は、簡単な構造であって、水銀増感反応を
利用して光化学反応を行わせる際に紫外線透過窓に生成
物が堆積せず、紫外線の透過が阻害されることのない光
化学反応装置を提供すること金目的とし、′この目的は
、紫外線の透過窓を有する反応容器内に$、@を配置し
て水銀を含む元反応性ガスを流し、反応容器外の紫外線
光源で当該ガスを光化学反応せしめ、その反応生成物を
基板上に蒸着もしくは堆積させる装置であって、冷却可
能なメツシュ部材が反応容器内の透過窓近傍に配設され
てなる光化学反応装置によって達成される。これは低温
のメツシュ部材に水銀蒸気が到達するとその蒸気圧は急
激に低下するためにそこで捕捉され、透過窓まで到達し
ないことに着目して本発明を完成したものであるが、こ
のメツシュ部材は、例えば中空線材を使用して網目状に
し、その内部に冷却媒体を通過させることにより容易に
目的を達成できる。そして、紫外線はメツシュ部材の空
間部を通過して基板に照射されるが、その網目に粗密を
設けるとその通過量を任意に調節することができるので
、基板上の照射量を均一にしたり、逆に部分的に変化さ
せることも可能となる。
Therefore, the present invention has a simple structure, and when a photochemical reaction is carried out using a mercury sensitization reaction, no products are deposited on the ultraviolet transmitting window, and the photochemical reaction does not inhibit the transmission of ultraviolet light. The objective is to provide an apparatus, and 'this purpose is to place $, @ in a reaction vessel with an ultraviolet ray transmission window, to flow the original reactive gas containing mercury, and to use an ultraviolet light source outside the reaction vessel to irradiate the gas. This is achieved by a photochemical reaction device in which a coolable mesh member is disposed near a transmission window in a reaction vessel, and the reaction product is vapor-deposited or deposited on a substrate. The present invention was developed by focusing on the fact that when mercury vapor reaches a low-temperature mesh member, its vapor pressure drops rapidly, so it is trapped there and does not reach the transmission window. The purpose can be easily achieved, for example, by using a hollow wire to form a mesh and passing a cooling medium through the mesh. The ultraviolet rays pass through the spaces in the mesh member and are irradiated onto the substrate, but if the mesh is made denser or denser, the amount of ultraviolet light passing through can be adjusted arbitrarily, so the amount of irradiation on the substrate can be made uniform, On the other hand, it is also possible to make partial changes.

以下に図面に示す実施例に基いて本発明を具体的に説明
する。
The present invention will be specifically described below based on embodiments shown in the drawings.

反応容器1には元反応性ガスの導入孔11と、減圧装置
に接続される排気孔12が設けられ、内部中央には石英
ガラス製の基板支持台13が上下動可能に配設されてい
る。そして、上面は石英ガラスからなる紫外線の透過窓
14が設けられているが、その上部に灯体2が一体に連
設され、その天井部には反射部材21を介して紫外線光
源である紫外線ランプ5が複数個並設されている。ここ
で紫外線ランプ5は管径が18−1点灯開始電圧が!1
50V、点灯電圧が90Vで電流が5Nの交流点灯の低
圧水銀灯であるが、これに限られるものではなく、無電
極型のランプ装置やプラズマ発生装置でもよく、要は所
定量の紫外線を発生させるものであればよい6また必要
に応じて灯体2内の弗曲1/r−Hフル71−苧かス書
為ル姶睦イLr−^基板支持台13には図示略の温度調
節器が取付けられており、これに支持される基板4は外
径が160Mのアルミナ板であって約150℃に加熱さ
れている。なお、この基板支持台15をターンテーブル
状に回転可能としたり、反応容器1内を移動可能とし、
運搬機構で基板4を出し入れして多数の基@4を効率良
く処理できるようにすることができる。導入孔11から
はキャリアガスのアルゴン、光増感剤の水銀ガス、分解
蒸着用ガスの四水素化珪素からなる混合カスが反応容器
1内に供給されるが、予め混合すると反応するような光
反応性ガスを使用するときは複数本の導入孔11を設け
て各ガスを個別に導入し、反応容器1内で混合するよう
にするのが良い。そして、この導入孔11には温度調節
器を設け、各カスを最適温度に藺整して光化学反応を増
進させるのが良い。
The reaction vessel 1 is provided with an introduction hole 11 for the original reactive gas and an exhaust hole 12 connected to a pressure reducing device, and a substrate support stand 13 made of quartz glass is arranged in the center of the interior so as to be movable up and down. . The upper surface is provided with an ultraviolet light transmitting window 14 made of quartz glass, and a lamp body 2 is integrally connected to the upper part of the window 14, and an ultraviolet lamp, which is an ultraviolet light source, is connected to the ceiling through a reflective member 21. 5 are arranged in parallel. Here, the UV lamp 5 has a tube diameter of 18-1 and a lighting start voltage! 1
This is a low-pressure mercury lamp with an AC lighting of 50V, a lighting voltage of 90V, and a current of 5N, but it is not limited to this, and may also be an electrodeless lamp device or a plasma generator, in short, it generates a predetermined amount of ultraviolet rays. 6 Also, if necessary, a temperature regulator (not shown) may be installed on the board support stand 13 in the lamp body 2. The substrate 4 supported by this is an alumina plate having an outer diameter of 160M and is heated to about 150°C. In addition, this substrate support stand 15 may be made rotatable like a turntable or movable within the reaction vessel 1,
A large number of substrates 4 can be efficiently processed by loading and unloading the substrates 4 with the transport mechanism. A mixture of argon as a carrier gas, mercury gas as a photosensitizer, and silicon tetrahydride as a decomposition vaporization gas is supplied from the introduction hole 11 into the reaction vessel 1. When using reactive gases, it is preferable to provide a plurality of introduction holes 11 to introduce each gas individually and mix them within the reaction vessel 1. It is preferable that a temperature regulator is provided in the introduction hole 11 to adjust the temperature of each dreg to an optimum temperature to promote the photochemical reaction.

次に、反応容器1内の透過窓14近傍にはメツシュ部材
5がf!4一般六れて番逼空1Aシ嵐−イl^2このメ
ツシュ部材5は、細い金属製パイプ51を網目状に編ん
だものであり、これが中空枠52内に張られている。こ
の網目の開口率は90%程度であり、これによって紫外
線の透過が阻害されることが問題とはならないが、この
網目に粗密を設ければ部分的に紫外線の透過率を変化さ
せることができるので、基板4上の照射量は任意に詞節
できる。そして、中空枠52には導入管53と排出管5
4が接続されており、外部から気体や液体の冷却媒体が
導入されてメツシュ部材5が冷却されるようになってい
る。もっともこのメツシュ部材5はこの構造に限られる
ものではなく、例えば、単に金網を張設し、これに冷却
気体を吹き付けて冷却゛するものでもよく、要は冷却可
能なメツシュ状体であればよい。
Next, a mesh member 5 is placed near the transmission window 14 in the reaction vessel 1 f! 4. General 6.0.1A.2 This mesh member 5 is made by knitting thin metal pipes 51 into a mesh shape, which is stretched inside a hollow frame 52. The aperture ratio of this mesh is about 90%, so it is not a problem that the transmission of ultraviolet rays is obstructed by this, but if the mesh is made coarser and denser, it is possible to partially change the transmittance of ultraviolet rays. Therefore, the amount of irradiation on the substrate 4 can be determined arbitrarily. The hollow frame 52 has an inlet pipe 53 and an outlet pipe 5.
4 is connected, and a gas or liquid cooling medium is introduced from the outside to cool the mesh member 5. However, the mesh member 5 is not limited to this structure; for example, it may be simply a wire mesh stretched over it and cooled by blowing cooling gas onto it; in short, it may be a mesh-like member that can be cooled. .

しかして、反応容器1内が数mHgかそれ以下に減圧さ
れて紫外線ランプ3が点灯される。もっとも反応容器1
内を減圧せずに常圧下で光化学反応を起させてもよい。
The pressure inside the reaction vessel 1 is then reduced to several mHg or less, and the ultraviolet lamp 3 is turned on. Most reaction vessel 1
The photochemical reaction may be caused under normal pressure without reducing the pressure inside.

そして導入孔11より、分圧5 wm Hgのアルゴン
、5 wm HHの四水素化珪素、S X 10−’ 
wx Hgの水銀蒸気が導入されるが、紫外線・の照射
により四水素化珪素が光分解し、アモルファスの珪素が
基板4上に蒸着もしくは堆積される。このとき、各ガス
の一部分は上昇して透過窓14方向に進むが、その途中
でメツシュ部材5を通過しようとする。しかし、メツシ
ュ部材5が冷却されているので水銀蒸気も冷却されて蒸
気圧が低下する。例えば、0℃における水銀の蒸気圧は
2 X 10−’ wm Hgであり、メツシュ部材5
を0℃に冷却しておくと、この部分で水銀の蒸気圧は1
/1゜以下となってしまい、メツシュ部材5を通過でき
る水銀蒸気は極〈わずかとなる。従って、透過窓14の
表面では光増感作用が行われないために、四水素化珪素
に紫外線ランプ5より波長が185nmや254nmの
紫外線が照射されても分解しない。このため、透過窓1
4にアモルファスシリコンが堆積しないので長時間操業
してもくもらず、紫外線の透過が阻害されない。
Then, from the introduction hole 11, argon with a partial pressure of 5 wm Hg, silicon tetrahydride with a partial pressure of 5 wm HH, S X 10-'
Mercury vapor of wx Hg is introduced, and silicon tetrahydride is photodecomposed by irradiation with ultraviolet rays, and amorphous silicon is vapor-deposited or deposited on the substrate 4. At this time, a portion of each gas rises and moves toward the transmission window 14, but on the way, it attempts to pass through the mesh member 5. However, since the mesh member 5 is cooled, the mercury vapor is also cooled and its vapor pressure decreases. For example, the vapor pressure of mercury at 0°C is 2 x 10-' wm Hg, and the mesh member 5
If it is cooled to 0℃, the vapor pressure of mercury in this part is 1
/1° or less, and the amount of mercury vapor that can pass through the mesh member 5 is extremely small. Therefore, since no photosensitizing effect is performed on the surface of the transmission window 14, silicon tetrahydride is not decomposed even if it is irradiated with ultraviolet light having a wavelength of 185 nm or 254 nm from the ultraviolet lamp 5. For this reason, the transmission window 1
4. Since amorphous silicon does not accumulate, it does not fog up even after long-term operation, and the transmission of ultraviolet rays is not inhibited.

以上説明したように、本発明は、冷却可能なメツシュ部
材を反応容器内の透過窓近傍に配設したので、水銀蒸気
がこのメツシュ部材によって捕捉されて透過窓まで到達
せず、透過窓の表面では光化学反応がほとんど進行しな
いために生成物が堆積しない。従って、本発明によれば
、簡単な構造であって、水銀増感反応を利用して光化学
反応を行わせる際に紫外線透過窓に生成物が堆積せず、
紫外線の透過が阻害されることのない光化学反応装置を
提供することができる。
As explained above, in the present invention, since the coolable mesh member is disposed near the transmission window in the reaction vessel, mercury vapor is captured by the mesh member and does not reach the transmission window, and the surface of the transmission window is In this case, the photochemical reaction hardly progresses, so no products are deposited. Therefore, according to the present invention, the structure is simple, and when a photochemical reaction is performed using a mercury sensitization reaction, no product is deposited on the ultraviolet transmitting window.
A photochemical reaction device in which transmission of ultraviolet rays is not inhibited can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明実施例の断面図、第2図はメツシュ部材
の斜視図を示す。 1・・・反応容器 2・・・灯体 6・・・紫外線ラン
プ4・・・基板 5・・・メツシュ部材 13・・・基板支持台 14・・・透過窓第1図 32
1 第2図 手続補正書(自発) 昭和59年8月10日 特許庁長官 志賀 学 殿 1、事件の表示 昭和59年 特許 願第63411号 2、発明の名称 光化学反応装置 3、 補正をする者 事件との関係 特許出願人 6、 補正により増加する発明の数 ナシ7、補正の対
象 明細書の発明の詳細な説明の欄 明細書第5頁18行目の「空間にガスをフローできる構
造を設けてもよい。」を「空間にガスをフローしたり、
空間を減圧できる機構を設けてもよい。」に補正する。 以上
FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a perspective view of a mesh member. 1... Reaction container 2... Light body 6... Ultraviolet lamp 4... Substrate 5... Mesh member 13... Substrate support stand 14... Transmission window Fig. 1 32
1 Figure 2 Procedural amendment (voluntary) August 10, 1980 Manabu Shiga, Commissioner of the Patent Office 1, Indication of the case 1981 Patent Application No. 63411 2, Title of the invention Photochemical reaction device 3, Person making the amendment Relationship to the case Patent applicant 6. Number of inventions increased by amendment N/A 7. In the detailed description of the invention in the specification subject to amendment, page 5, line 18, ``Structure that allows gas to flow in space "can be set up" to "flow gas into the space,
A mechanism that can reduce the pressure in the space may be provided. ”. that's all

Claims (1)

【特許請求の範囲】 1、紫外線の透過窓を有する反応容器内に基板を配置し
て水銀を含む光反応性ガスを流し、反応容器外の紫外線
光源で当該ガスを光化学反応せしめ、その反応生成物を
基板上に堆積もしくは蒸着させる装置であって、冷却可
能なメツシュ部材が反応容器内の透過窓近傍に配設され
てなる光化学反応装置。 2 前記メツシュ部材は中空線材を網目状にしたもので
あって、その内部に冷却媒体を通過させることを特徴と
する特許請求の範囲第1項記載の光化学反応装置。 五 前記メツシュ部材はその網目に粗密を有し、基板上
の紫外綿の@閣分布を醐節すふ本のであることを特徴と
する特許請求の範囲第1項記載の光化学反応装置。
[Claims] 1. Placing a substrate in a reaction vessel having an ultraviolet ray transmission window, flowing a photoreactive gas containing mercury, causing the gas to undergo a photochemical reaction using an ultraviolet light source outside the reaction vessel, and producing the reaction product. A photochemical reaction device for depositing or vapor-depositing a substance on a substrate, the photochemical reaction device comprising a coolable mesh member disposed near a transmission window in a reaction vessel. 2. The photochemical reaction device according to claim 1, wherein the mesh member is a hollow wire rod shaped into a mesh, through which a cooling medium passes. 5. The photochemical reaction device according to claim 1, wherein the mesh member has a density in its mesh, so as to control the distribution of the ultraviolet cotton on the substrate.
JP6341184A 1984-04-02 1984-04-02 Photochemical reaction device Granted JPS60209246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6341184A JPS60209246A (en) 1984-04-02 1984-04-02 Photochemical reaction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6341184A JPS60209246A (en) 1984-04-02 1984-04-02 Photochemical reaction device

Publications (2)

Publication Number Publication Date
JPS60209246A true JPS60209246A (en) 1985-10-21
JPS6250553B2 JPS6250553B2 (en) 1987-10-26

Family

ID=13228519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341184A Granted JPS60209246A (en) 1984-04-02 1984-04-02 Photochemical reaction device

Country Status (1)

Country Link
JP (1) JPS60209246A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126822A (en) * 1983-12-14 1985-07-06 Toshiba Corp Method and apparatus for optical vapor growth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126822A (en) * 1983-12-14 1985-07-06 Toshiba Corp Method and apparatus for optical vapor growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window

Also Published As

Publication number Publication date
JPS6250553B2 (en) 1987-10-26

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