JPS60209159A - Gas detecting element - Google Patents
Gas detecting elementInfo
- Publication number
- JPS60209159A JPS60209159A JP6517384A JP6517384A JPS60209159A JP S60209159 A JPS60209159 A JP S60209159A JP 6517384 A JP6517384 A JP 6517384A JP 6517384 A JP6517384 A JP 6517384A JP S60209159 A JPS60209159 A JP S60209159A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- value
- main component
- resistance value
- apt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はインブタンガス等の可燃性ガスのガス検知素子
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gas detection element for combustible gas such as inbutane gas.
従来インブタンガス等の可燃性ガスのガス検知素子とし
ては5n02を主成分としてこれに感度を同上させるべ
(Ag、Ad、I’d、Pt、Rh、Ru等の貴金属を
添加したものが知られているが、イソブタンガス等の可
燃性ガスに対する感度が向上するばかシではなくアルコ
ール等の雑ガスに対する感度も同様に向上して特定のガ
スの牟の検知が出来ない欠点金有する。Conventionally, gas detection elements for combustible gases such as inbutane gas have been made with 5n02 as the main component, and have been known to have the same sensitivity. However, it does not only improve sensitivity to flammable gases such as isobutane gas, but also improves sensitivity to miscellaneous gases such as alcohol, but has the disadvantage that it cannot detect specific gases.
本発明はかかる欠点全解決し、イソブタンガス等の可燃
性ガスに対し優れた感度を有すると共にアルコール等の
雑ガスに対して撰択的にガス検知が出来るガス検知素子
を提供することを目的としだものであり、8n02を主
成分として、これに対して副成分としてSitたは/及
びklを少なくとも帆O1重量%以上添加せしめて成る
。The object of the present invention is to overcome all of these drawbacks and provide a gas detection element that has excellent sensitivity to flammable gases such as isobutane gas and can selectively detect miscellaneous gases such as alcohol. It is made of 8n02 as a main component, to which Sit and/or kl are added as subcomponents in an amount of at least 1% by weight of Sail O.
図は主成分S n 02に対して副成分としてSi を
釉々の配合量で添加して得られたガス検知素子の温匿3
5o℃下における該各8iの配合量と、空気中における
電気抵抗値(以下単に抵抗値と称す)RA、インブタン
ガス(mW 1800 ppm 雰囲気中の抵抗直几B
並びにエタノールガス濃度3600ppm雰囲気中の抵
抗値fLEの各関係を示すもので、図から明らかな様に
ガス検知素子の空気中における抵抗値RAはSiの添加
量が5重量%まではほぼ一定であるが5重量%超えると
減少傾向を示し、またガス検知素子のインブタンガス雰
囲気中における抵抗値RBはSiの添加量が帆01%N
量%よシ多くなるに従って減少全示すが5N量%超える
と最小直に達して横這い傾向を示し、またガス検知素子
のエタノールガス雰囲気中における抵抗値BEはSiの
添加量が5重量%まではほぼ一定であるが5重量%超え
ると徐々に下降傾向を示すことが分る。The figure shows the heating temperature 3 of a gas sensing element obtained by adding Si as a subcomponent to the main component S n 02 in the same amount as the glaze.
The blending amount of each 8i at 5o C, the electrical resistance value in air (hereinafter simply referred to as resistance value) RA, and the resistance direct value in the atmosphere of inbutane gas (mW 1800 ppm B)
It also shows the relationship between the resistance value fLE in an atmosphere with an ethanol gas concentration of 3600 ppm, and as is clear from the figure, the resistance value RA of the gas detection element in air is almost constant until the amount of Si added is 5% by weight. When the amount of Si added exceeds 5% by weight, the resistance value RB in an inbutane gas atmosphere tends to decrease.
The resistance value BE of the gas sensing element in an ethanol gas atmosphere decreases as the amount of Si increases, but when it exceeds 5% by weight, it reaches a minimum value and shows a flat tendency. It can be seen that although it is almost constant, it shows a gradual downward trend when it exceeds 5% by weight.
従って主成分5n02に対して副成分Siの疾加量が0
.01重量%未満ではインブタンガス雰囲気中の抵抗値
几Bとエタノールガス雰囲気中の抵抗11[REとは近
似した匝のため検知ガスに対する選択性が極めて低いた
め、ガス検知素子の主成分8n02に対する副成分8i
の添加量は少なくとも0.01重量%以上にすることに
よって検知ガスに対する感度向上と選択性効果が得られ
る。Therefore, the amount of addition of the subcomponent Si to the main component 5n02 is 0.
.. If the resistance value is less than 01% by weight, the resistance value B in the inbutane gas atmosphere and the resistance value 11[RE in the ethanol gas atmosphere are similar, so the selectivity for the detection gas is extremely low. ingredient 8i
By setting the amount of addition to at least 0.01% by weight or more, sensitivity improvement and selectivity effects with respect to the detection gas can be obtained.
尚ガス検知素子は主成分5n02に対して添加すべき副
成分S1の量の上限は空気中抵抗li RAとイソブタ
ンガス抵抗1ii1(B並びにエタノ−・ルガス抵抗1
lII几Eとの差が顕著に現れる51量%にすることが
望ましい。1.たガス検知素子に対する信頼性並びに安
全性の観点から主成分5n02に対して副成分Siの添
加範囲を0.5〜2重量%にすることがより好ましい。In the gas detection element, the upper limit of the amount of the subcomponent S1 to be added to the main component 5n02 is the air resistance liRA, the isobutane gas resistance 1ii1 (B, and the ethanol gas resistance 1
It is desirable to set the content to 51% by weight so that the difference from 1II-E becomes noticeable. 1. From the viewpoint of reliability and safety for the gas detection element, it is more preferable that the addition range of the subcomponent Si is 0.5 to 2% by weight based on the main component 5n02.
副成分としてSiO代シに種々の配合量のA4或いはS
iとA/1.とを夫々添加して得たガス検知素子につき
前記と同条件下で空気中および各ガス雰囲気中における
夫々の抵抗値)LA、RB、REを測定した場合も8i
の場合と同様の結果が得られた。Various amounts of A4 or S are added to SiO as a subcomponent.
i and A/1. 8i also when measuring the respective resistance values (LA, RB, RE) in air and in each gas atmosphere under the same conditions as above for the gas detection element obtained by adding each of
Similar results were obtained.
次に実施例、比較例によって本発明を更に説明する。Next, the present invention will be further explained with reference to Examples and Comparative Examples.
実施例
Sn O4水浴液をアンモニヤ水で中和して沈澱生成物
を得、この沈澱生成物を濾過して温度570℃で3時間
焼成後、これを粉砕して8n02から成るガス検知素子
原料を得、この原料に・8i微粉末を8n02に対して
1.5重量%添加混合し、かかる混合物に純水を加えて
ペースト状にし、大きさ縦2.5泪、横3.5簡、厚さ
1.0簡の形状に成形し、温度600℃で1時間焼成し
てガス検知素子K Aを得た。Example Sn O4 water bath liquid was neutralized with aqueous ammonia to obtain a precipitated product, this precipitated product was filtered and calcined at a temperature of 570°C for 3 hours, and then pulverized to obtain a gas sensing element raw material consisting of 8n02. To this raw material, 8i fine powder was added and mixed in an amount of 1.5% by weight based on 8n02, and pure water was added to the mixture to form a paste. It was molded into a 1.0-inch shape and fired at a temperature of 600° C. for 1 hour to obtain a gas detection element KA.
比較例
主成分S n 02に対し副成分Siの代りにPdを1
.5重量%添加する以外は前記実施例と同様にしてガス
検知素子KBを得た。Comparative example Pd was added to the main component S n 02 instead of the subcomponent Si.
.. A gas sensing element KB was obtained in the same manner as in the above example except that 5% by weight was added.
得られたガス検知素子KAおよびKBを温度350℃に
保持しながら、空気中の抵抗値RA。While maintaining the obtained gas sensing elements KA and KB at a temperature of 350°C, the resistance value RA in the air.
イソブタンガス濃度1800ppm雰囲気中の抵抗値R
B、エタノールガス雰囲気中の抵抗値REの夫々につい
て測定し、空気中の抵抗値KAの対数1iE to y
RAと各ガス雰囲気中の抵抗値RB1REの対数値1
o y RB及び対数呟t o t RBとの差をガ
ス検知素子KA若しくはKBの検知ガスに対する感度特
性としてめた。その結果を表に示す。Resistance value R in an atmosphere with isobutane gas concentration of 1800 ppm
B. Measure each resistance value RE in an ethanol gas atmosphere, and calculate the logarithm 1iE to y of the resistance value KA in air.
Logarithm value 1 of RA and resistance value RB1RE in each gas atmosphere
The difference between o y RB and logarithm t o t RB was taken as the sensitivity characteristic of the gas detection element KA or KB to the detected gas. The results are shown in the table.
表
この表から実施例のガス検知素子KAは比較例のガス検
知系・子KBに比してイソブタンガスに対する感度が向
上したこと並びに実施例のガス検知素子KAは比較例の
ガス検知素子に比してイソブタンガスとエタノールガス
とに対する感度に顕著な差があるため検知ガスに対する
優れた選択性を有することが確認された。This table shows that the gas detection element KA of the example has improved sensitivity to isobutane gas compared to the gas detection system/child KB of the comparative example, and that the gas detection element KA of the example has improved sensitivity to isobutane gas compared to the gas detection element of the comparative example. It was confirmed that there was a significant difference in sensitivity to isobutane gas and ethanol gas, and that it had excellent selectivity to the detection gas.
このように本発明のガス検知素子は主成分8n02に対
し副成分8iまたは/及びktf少なくとも0.01重
量%以上添加せしめて成るためにイソブタンガス等の可
燃性ガスに対する感度に優れると共に特定ガスに対する
選択性にも優れる効果を有する。As described above, the gas detection element of the present invention has at least 0.01% by weight of the subcomponents 8i and/or ktf added to the main component 8n02, so it has excellent sensitivity to flammable gases such as isobutane gas, and has excellent sensitivity to specific gases. It also has an effect of excellent selectivity.
図は主成分5n02に対して添加し九8iの重量%と各
抵抗値RA、RB、几Eとの関係を示す図である。
外2名゛。The figure shows the relationship between the weight percent of 98i added to the main component 5n02 and the resistance values RA, RB, and E. 2 people outside.
Claims (1)
iまたは/及びklを少なくとも0.01重量%以上添
加せしめて成るガス検知素子。5n02 as the main component, and S as a subcomponent.
A gas sensing element containing at least 0.01% by weight of i or/and kl.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6517384A JPS60209159A (en) | 1984-04-03 | 1984-04-03 | Gas detecting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6517384A JPS60209159A (en) | 1984-04-03 | 1984-04-03 | Gas detecting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60209159A true JPS60209159A (en) | 1985-10-21 |
JPH053541B2 JPH053541B2 (en) | 1993-01-18 |
Family
ID=13279234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6517384A Granted JPS60209159A (en) | 1984-04-03 | 1984-04-03 | Gas detecting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60209159A (en) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5163693A (en) * | 1974-11-29 | 1976-06-02 | Kaoru Aotani | GASUKENCHISOSHI |
JPS51126897A (en) * | 1975-04-26 | 1976-11-05 | Marcon Electronics Co Ltd | Gas detector element |
JPS5349493A (en) * | 1976-10-18 | 1978-05-04 | Saito Noboru | Gas detecting element composed of oxide semiconductor |
JPS53135700A (en) * | 1977-04-30 | 1978-11-27 | Matsushita Electric Works Ltd | Inflammable gas detecting element |
JPS53135698A (en) * | 1977-04-30 | 1978-11-27 | Matsushita Electric Works Ltd | Production of gas detecting element |
JPS5613905A (en) * | 1980-04-05 | 1981-02-10 | Kenji Nakamura | Manufacture of blank of wiping tool |
JPS5749850A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Gas detecting element |
JPS5753533A (en) * | 1980-09-12 | 1982-03-30 | Int Harvester Co | Manufacture of polyimide and polyimide precursor |
JPS6013452U (en) * | 1983-07-06 | 1985-01-29 | 日本電気株式会社 | Semiconductor gas detection element |
JPS60100755A (en) * | 1983-11-08 | 1985-06-04 | Fuigaro Giken Kk | Gas sensor |
JPS60114759A (en) * | 1983-11-28 | 1985-06-21 | Nec Corp | Semiconductor type gas detecting element |
JPS60170758A (en) * | 1984-02-15 | 1985-09-04 | Nec Corp | Semiconductor gas detecting element |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4102195A (en) * | 1977-02-08 | 1978-07-25 | Westinghouse Electric Corp. | Hot spot temperature sensor |
-
1984
- 1984-04-03 JP JP6517384A patent/JPS60209159A/en active Granted
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5163693A (en) * | 1974-11-29 | 1976-06-02 | Kaoru Aotani | GASUKENCHISOSHI |
JPS51126897A (en) * | 1975-04-26 | 1976-11-05 | Marcon Electronics Co Ltd | Gas detector element |
JPS5349493A (en) * | 1976-10-18 | 1978-05-04 | Saito Noboru | Gas detecting element composed of oxide semiconductor |
JPS53135700A (en) * | 1977-04-30 | 1978-11-27 | Matsushita Electric Works Ltd | Inflammable gas detecting element |
JPS53135698A (en) * | 1977-04-30 | 1978-11-27 | Matsushita Electric Works Ltd | Production of gas detecting element |
JPS5613905A (en) * | 1980-04-05 | 1981-02-10 | Kenji Nakamura | Manufacture of blank of wiping tool |
JPS5749850A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Gas detecting element |
JPS5753533A (en) * | 1980-09-12 | 1982-03-30 | Int Harvester Co | Manufacture of polyimide and polyimide precursor |
JPS6013452U (en) * | 1983-07-06 | 1985-01-29 | 日本電気株式会社 | Semiconductor gas detection element |
JPS60100755A (en) * | 1983-11-08 | 1985-06-04 | Fuigaro Giken Kk | Gas sensor |
JPS60114759A (en) * | 1983-11-28 | 1985-06-21 | Nec Corp | Semiconductor type gas detecting element |
JPS60170758A (en) * | 1984-02-15 | 1985-09-04 | Nec Corp | Semiconductor gas detecting element |
Also Published As
Publication number | Publication date |
---|---|
JPH053541B2 (en) | 1993-01-18 |
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