JPS60114759A - Semiconductor type gas detecting element - Google Patents
Semiconductor type gas detecting elementInfo
- Publication number
- JPS60114759A JPS60114759A JP22397583A JP22397583A JPS60114759A JP S60114759 A JPS60114759 A JP S60114759A JP 22397583 A JP22397583 A JP 22397583A JP 22397583 A JP22397583 A JP 22397583A JP S60114759 A JPS60114759 A JP S60114759A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- gas
- detection element
- detecting element
- gas detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
く厘業土の利用分野〉
本発明は、ガスの吸着ｖｃよシ抵抗値が変化する金属酸
化物半導体を用いた半導体式ガス検知素子に閃する。DETAILED DESCRIPTION OF THE INVENTION [Field of application of industrial soil] The present invention is directed to a semiconductor type gas sensing element using a metal oxide semiconductor whose resistance value changes depending on gas adsorption (VC).
〈従来技術及び問題点〉
従来この柾の半導体式カス検知素子としては酸化第二錫
を主成分とした材料を焼結した素子が広く開発されてい
る。また、半導体式ガス検知素子の電極としては、一般
にｐｔ（白金）、Ａｕ（金）が用いられているがミ従来
のこの種の半導体式カス検知素子は、検知ガス例えばｉ
−Ｃ４ＨＩＤ（イソブタノガス）中における素子の抵
抗温度係数が高く、このような素子をガス漏れ警報器と
して応用するためには、高精度の素子温度制御回路が必
要となシ、高価となるという問題点がわった。<Prior Art and Problems> Conventionally, elements made of sintered materials containing stannic oxide as a main component have been widely developed as semiconductor-type scum detection elements of this type. In addition, although PT (platinum) and Au (gold) are generally used as electrodes of semiconductor gas detection elements, conventional semiconductor gas detection elements of this type are not suitable for detecting gases such as i
- The temperature coefficient of resistance of the element in C4HID (isobutano gas) is high, and in order to apply such an element as a gas leak alarm, a highly accurate element temperature control circuit is required and is expensive. It broke.
〈発明の目的〉
本発明の目的は、検知ガス中における抵抗温度係数が低
く、温度制御が不要で、高精度な上に安価な半導体式ガ
ス検知菓子を提供することにある。<Objective of the Invention> An object of the present invention is to provide a semiconductor-type gas detection confectionery that has a low temperature coefficient of resistance in a detection gas, does not require temperature control, is highly accurate, and is inexpensive.
〈発明の構成〉
本発明の半導体式ガス検知素子にあっては、金属酸化物
半導体を用いた半導体式ガス検知素子においてｌΩ／口
〜ＬＯＯＫΩ／口のシート抵抗を有する厚膜印刷用抵抗
ペーストを電極とじて用いた構成とすることによシ、上
記従来の問題点を解決している。<Structure of the Invention> In the semiconductor type gas sensing element of the present invention, a thick film printing resistive paste having a sheet resistance of 1Ω/hole to LOOKΩ/hole is used in the semiconductor type gas detection element using a metal oxide semiconductor. By using a configuration in which the electrodes are used together, the above-mentioned conventional problems are solved.
〈実施例〉 以下、本発明を図面に基づいて説明する。<Example> Hereinafter, the present invention will be explained based on the drawings.
第１図は本発明の一実施例に係る半導体式ガス検知素子
を示し、第２図は本発明と対比するため電極にＡｕ（金
）、Ｐｔ（白金）を用いた従来のガス検知素子における
１−Ｃ４Ｈ１０（イソブタン）１０００ ｐｐｍ中の抵
抗一温度曲線を示し、そして第３図は本発明の実施例に
よる第２図対応の抵抗−温反曲線を示す。まず、第１図
において、ｌがガス検知素子、２が素子基体としての酸
化第二錫（５ｎＯｚ ）の焼結体、そして３が抵抗ペー
ストを塗布した電極である。上記ガス検知素子１の形成
に際しては１ず、５ｈＯｚ（酸化第二スズ）粉体に８ｊ
Ｏｚ （二酸化ケイ素）１〜１０重童ｓ 、Ｍｇ ｏ（
酸化マグネシウム）０．５〜５重量％、ｐｔｃ彫２（塩
化白金）０．１〜５重ｉｔ％を添加しボールミルで４６
時間混合した後、５００ ｃ −１ｏｏｏ ｔ：’で仮
焼し、再粉砕を行ない混合粉末を得る。このようにして
得られた混合粉末をプレス等で成型し、さらにホットプ
レスによシ焼結せしめる。FIG. 1 shows a semiconductor type gas sensing element according to an embodiment of the present invention, and FIG. 2 shows a conventional gas sensing element using Au (gold) and Pt (platinum) for electrodes for comparison with the present invention. FIG. 3 shows a resistance-temperature curve in 1000 ppm of 1-C4H10 (isobutane), and FIG. 3 shows a corresponding resistance-temperature curve according to an embodiment of the invention. First, in FIG. 1, 1 is a gas detection element, 2 is a sintered body of stannic oxide (5 nOz) as an element substrate, and 3 is an electrode coated with a resistance paste. When forming the gas sensing element 1, first, 8j was added to 5hOz (stannic oxide) powder.
Oz (silicon dioxide) 1-10 s, Mgo (
Magnesium oxide) 0.5 to 5% by weight, PTC carving 2 (platinum chloride) 0.1 to 5% by weight were added and milled in a ball mill to 46% by weight.
After mixing for a period of time, the mixture is calcined at 500 c -100 t:' and re-pulverized to obtain a mixed powder. The mixed powder thus obtained is molded using a press or the like, and further sintered using a hot press.
次に、この焼結体２に′電極として、シート抵抗１０に
Ω／口の厚膜印刷用抵抗ペーストを系布し６００Ｃで焼
付はカス検知素子ｌを得る。このガス検知素子１のｉ
−Ｃ４ＨＩＯ（イソブタン） １１０００ｐｐ中におけ
る抵抗一温度曲線は第３図に示すようになっており、こ
れを同様の条件における第２図の従来の例と比較すると
、温［３４０Ｃ〜４６０Ｃにおいて抵抗温度係数が極め
て低いことが判明した。従って、従来のようにカス検知
素子の温度制御をする必要がない。Next, a resistance paste for thick film printing of Ω/mm is applied to the sheet resistor 10 as an electrode on the sintered body 2, and baked at 600C to obtain a scum detection element 1. i of this gas sensing element 1
-C4HIO (isobutane) The resistance-temperature curve in 11,000 pp is shown in Figure 3. Comparing this with the conventional example in Figure 2 under similar conditions, the temperature coefficient of resistance at temperature [340C to 460C] was found to be extremely low. Therefore, there is no need to control the temperature of the waste detection element as in the conventional case.
〈発明の効果〉
本発明は、以上説明したように、半導体式ガス検知素子
の電極としてｌΩ／目〜１００にΩ／口のシート抵抗を
有する厚膜印刷用＆抗ペーストを用いることとしたため
、ガス検知素子の検知ガス中における抵抗温度係数を減
することができ、その結果従来のようにガス検知素子の
温度制御をする必要がなく、安価で扁精度な７ｊス漏れ
警報器を実現することができるという効果がある。<Effects of the Invention> As explained above, the present invention uses a thick film printing & anti-paste having a sheet resistance of 1 Ω/m to 100 Ω/m as an electrode of a semiconductor gas sensing element. To realize an inexpensive and highly accurate 7J gas leak alarm that can reduce the temperature coefficient of resistance of a gas detection element in a detection gas, and as a result does not require temperature control of the gas detection element as in the past. It has the effect of being able to.
第１図は本発明の実施例によるガス検知素子の斜視図、
第２図は、本発明と対比のため従来のガス検知素子にお
ける１−Ｃ４Ｈ１Ｇ（イソブタン） １１０００ｐｐ中
の抵抗一温度曲線を′電極がＡｕ（金）、Ｐｔ（白金）
の楊会について示す特性図、
そして第３図は、本発明の夷ＪＭ例による、ガス検知素
子のｉ −Ｃ４Ｈｉｅ （イソブタン） ｌｏｏＯｐｐ
ｍ中の抵抗一温度曲線を示す特性図でおる。
ｌ・・・ガス検知素子 ２・・・焼結体３・・・電極
第１図
１
第２図
第３図
温度（’Ｃ）Fig. 1 is a perspective view of a gas detection element according to an embodiment of the present invention, and Fig. 2 shows a resistance-temperature curve in 1-C4H1G (isobutane) 11000pp in a conventional gas detection element for comparison with the present invention. is Au (gold), Pt (platinum)
FIG. 3 is a characteristic diagram showing the characteristic diagram for the Yang Kai of the present invention, and FIG.
This is a characteristic diagram showing a resistance-temperature curve in m. l... Gas detection element 2... Sintered body 3... Electrode Figure 1 Figure 2 Figure 3 Temperature ('C)
Claims (1)
て、ｌΩ／口〜１００にΩ／口のシート抵抗をン目する
Ｗ−誤印刷用抵抗ペーストを電極として用いること′（
Ｉ−特徴とする半導体式ガス検知素子。In a semiconductor type gas sensing element using a metal oxide semiconductor, a W-misprinted resistance paste with a sheet resistance of 1Ω/unit to 100Ω/unit is used as an electrode.
I-Characteristic semiconductor gas detection element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22397583A JPS60114759A (en) | 1983-11-28 | 1983-11-28 | Semiconductor type gas detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22397583A JPS60114759A (en) | 1983-11-28 | 1983-11-28 | Semiconductor type gas detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60114759A true JPS60114759A (en) | 1985-06-21 |
Family
ID=16806606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22397583A Pending JPS60114759A (en) | 1983-11-28 | 1983-11-28 | Semiconductor type gas detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60114759A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60209159A (en) * | 1984-04-03 | 1985-10-21 | Nippon Muki Kk | Gas detecting element |
-
1983
- 1983-11-28 JP JP22397583A patent/JPS60114759A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60209159A (en) * | 1984-04-03 | 1985-10-21 | Nippon Muki Kk | Gas detecting element |
| JPH053541B2 (en) * | 1984-04-03 | 1993-01-18 | Nippon Muki Kk |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1045249A (en) | Humidity sensitive ceramic resistor | |
| US4543273A (en) | Carbon monoxide sensing element and method of making same | |
| JPS626182B2 (en) | ||
| JPS60114759A (en) | Semiconductor type gas detecting element | |
| US5221644A (en) | Thick film sense resistor composition and method of using the same | |
| JPS5761582A (en) | Thermal printing head method of manufacutre thereof | |
| JPS5888645A (en) | Measuring sensor for content of oxygen in gas | |
| JPS60170758A (en) | Semiconductor gas detecting element | |
| JPH0378761B2 (en) | ||
| JPS6053837A (en) | Alcohol detecting element | |
| JPS5480799A (en) | Sensor element having unitary construction of thick resistor and sensor unit | |
| JPS6147548A (en) | Gas detection element | |
| JPS5840801A (en) | Humidity sensor element | |
| JPS6183949A (en) | Semiconductor type gas detecting element | |
| JPS58168952A (en) | Gas sensitive element | |
| JPS6210003B2 (en) | ||
| JPH01213562A (en) | Gaseous ozone sensor | |
| JPS6245495B2 (en) | ||
| JPS5832303A (en) | Humidity sensitive dielectric loss element | |
| JPH05302908A (en) | Moisture sensitive element | |
| JPS587041B2 (en) | Moisture sensitive resistance element for relative humidity | |
| JP2959122B2 (en) | Moisture sensitive element | |
| JPH04238260A (en) | Humidity-sensitive element | |
| JPH04335149A (en) | Gas sensor | |
| JPS58166248A (en) | Temperature-and humidity-sensitive element |