JPS6020888B2 - thick film integrated circuit - Google Patents
thick film integrated circuitInfo
- Publication number
- JPS6020888B2 JPS6020888B2 JP52039469A JP3946977A JPS6020888B2 JP S6020888 B2 JPS6020888 B2 JP S6020888B2 JP 52039469 A JP52039469 A JP 52039469A JP 3946977 A JP3946977 A JP 3946977A JP S6020888 B2 JPS6020888 B2 JP S6020888B2
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- integrated circuit
- dam
- lead
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 22
- 239000003989 dielectric material Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000011247 coating layer Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
本発明は厚膜集積回路に係り、特に上部電極引出し部の
だれ防止用ダムを譲亀体層に連続して形成した厚腹コン
デンサを含む厚濃集積回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thick-film integrated circuit, and more particularly to a thick-film integrated circuit including a thick-walled capacitor in which a dam for preventing drooping of an upper electrode lead-out portion is formed continuously on a compact body layer. be.
厚膜コンデンサは、セラミック基板上に下部電極、誘電
体層、上部電極を順次印刷・焼成して形成するものであ
るが、その場合、上部電極からの引出し部の周囲には印
刷だれを防止するために誘電体層に連続するダムを設け
る必要があり、また、前記誘電体が耐泡性の劣るチタン
酸バリウムが主材料である高誘電体の場合には、誘電体
層上を結晶質ガラスによるアンダーコートおよび非晶質
ガラスによるオーバーコートなどの耐湿被覆層により完
全に覆って耐湿性を向上させる必要がある。Thick film capacitors are formed by sequentially printing and firing a lower electrode, dielectric layer, and upper electrode on a ceramic substrate, but in this case, care must be taken to prevent printing from sagging around the lead-out part from the upper electrode. Therefore, it is necessary to provide a continuous dam in the dielectric layer, and if the dielectric is a high dielectric material mainly made of barium titanate, which has poor bubble resistance, crystalline glass is used to cover the dielectric layer. It is necessary to completely cover the glass with a moisture-resistant coating layer such as an undercoat with amorphous glass and an overcoat with an amorphous glass to improve moisture resistance.
第１図ａ，ｂは、前言己の如き構成を有する従来の厚膜
コンデンサと厚膿抵抗１２の集積回路例を示すものであ
る。FIGS. 1a and 1b show an example of an integrated circuit of a conventional thick film capacitor and a thick resistor 12 having the configuration as described above.
第１図において、１はセラミック基板で、その基板上に
ふたつの下部電極２，２と配線電極とが形成されており
、その一方の下部電極２上に低誘電体層３、上部電極５
を順次形成している。なお、９は上部電極５の引出し部
６からの印刷だれ７を防止するため、低誘電体により低
誘電体層３と一体に形成したダムである。他方の下部電
極２上には高誘電体層４とその上の上部電極５とが形成
されており、かつ、その高誘電体層４に連続して上部電
極５の引出し部６からの印刷だれ７を防止するための高
議電体からなるダム８が形成されている。In FIG. 1, reference numeral 1 denotes a ceramic substrate, on which two lower electrodes 2, 2 and a wiring electrode are formed, and on one of the lower electrodes 2, a low dielectric layer 3 and an upper electrode 5 are formed.
are formed sequentially. Note that 9 is a dam made of a low dielectric material and integrally formed with the low dielectric layer 3 in order to prevent printing sag 7 from the lead-out portion 6 of the upper electrode 5. A high dielectric layer 4 and an upper electrode 5 thereon are formed on the other lower electrode 2, and a printed drip from the lead-out portion 6 of the upper electrode 5 is formed continuously on the high dielectric layer 4. A dam 8 made of a high-voltage material is formed to prevent this.
そして、この場合は、低議電体と異なり、高誘電体は耐
湿性の劣る材料（チタン酸バリウムなど）よりなるため
、高誘電体層４上をアンダーコート１０、オーバーコー
ト１１よりなる耐緑被覆層により被覆する必要があり、
従来は前記の如くダム８を高譲露体層４と同一の材料に
より形成していたため、ダム８を含む部分まで耐湿被覆
層により完全に被覆しなければならなかった。このため
、厚膜コンデンサが厚膜集積回路坂上５で占める割合は
大きなものになってしまっていた。In this case, unlike the low dielectric material, the high dielectric material is made of a material with poor moisture resistance (such as barium titanate), so the high dielectric material layer 4 is coated with an undercoat 10 and an overcoat 11 that are anti-green. It is necessary to cover with a coating layer,
Conventionally, as described above, the dam 8 was formed of the same material as the high-conductivity layer 4, so the portion including the dam 8 had to be completely covered with the moisture-resistant coating layer. For this reason, the proportion of thick film capacitors in the thick film integrated circuit Sakagami 5 has become large.
本発明は、前記の如き問題を改善し、厚膜集積回路板上
で厚膜コンデンサが占める割合を減少させることを目的
とする。SUMMARY OF THE INVENTION It is an object of the present invention to alleviate the above-mentioned problems and to reduce the proportion of thick film capacitors on a thick film integrated circuit board.
本発明は、前記の目的を達成するため、耐湿性の劣る誘
電体厚膜コンヂンサにおける上部電極からの引出し部の
だれ防止用ダムを、コンデンサを構成する誘電体よりも
耐湿性のすぐれた絶縁体により形成し、ダムの部分まで
耐湿被覆層により完全に被覆する必要をなくして、回路
坂上での厚膜コンデンサが占める割合を減少させたこと
を特徴とする。In order to achieve the above object, the present invention replaces the dam for preventing drooping of the lead-out portion from the upper electrode in a dielectric thick film capacitor with poor moisture resistance by using an insulator with better moisture resistance than the dielectric constituting the capacitor. It is characterized by eliminating the need to completely cover the dam portion with a moisture-resistant coating layer, thereby reducing the proportion of thick film capacitors on the circuit slope.
以下、本発明の一実施例を第２図について説明する。An embodiment of the present invention will be described below with reference to FIG.
第２図に示す実施例は、第１図に示す実施例と同様に、
基板１上に、低誘電体厚膜コンデンサと、高誘電体厚膜
コンデンサと厚膜抵抗１２とを形成した厚膜集積回路で
あって、高誘電体厚膜コンデンサ以外は第１図に示す構
成と同一であるので、同一部分に同一符号を付してその
説明を省略する。The embodiment shown in FIG. 2 is similar to the embodiment shown in FIG.
This is a thick film integrated circuit in which a low dielectric thick film capacitor, a high dielectric thick film capacitor, and a thick film resistor 12 are formed on a substrate 1, and the configuration other than the high dielectric thick film capacitor is shown in FIG. , so the same parts are given the same reference numerals and the explanation thereof will be omitted.
本発明においては、上部電極からの引出し部のだれ防止
用ダム１３を、従来のように高譲軍体層４と同一の材料
により形成するのではなく、商議電体層よりも耐綱性の
すぐれた絶縁体により形成し、かつ、商議電体層４上を
覆う耐湿被覆層を、少なくとも商議電体層４上を完全に
被覆するように配設する。In the present invention, the dam 13 for preventing drooping of the lead-out portion from the upper electrode is not formed of the same material as the high concession body layer 4 as in the past, but is made of a material having better rope resistance than the commercial power body layer 4. A moisture-resistant coating layer formed of an insulator and covering the commercial electrical body layer 4 is disposed so as to completely cover at least the commercial electrical body layer 4.
すなわち、耐湿被覆層は前記ダム１３まで完全に被覆し
ないようにする。なお、前記のダム１３は、低誘電体３
と同一でもよく、アンダーコート１０と同一材料の結晶
質ガラスを利用することもできる。このように、本発明
は、耐溢性の劣る誘電体厚膜コンデンサのダム１３を、
コンデンサを構成する誘電体よりも耐緑性のすぐれた絶
縁体により形成したので、従来のようにダム１３の周囲
までアンダーコート１０およびオーバ−コート１１によ
り完全に被覆する必要がなくなり、その分だけ厚濃コン
デンサを４・型化して回路板上における厚膿コンデンサ
の占める割合を減少させることができる。That is, the moisture-resistant coating layer does not completely cover the dam 13. Note that the dam 13 is a low dielectric material 3.
It may be the same as the undercoat 10, and crystalline glass made of the same material as the undercoat 10 may also be used. In this way, the present invention provides the dam 13 of the dielectric thick film capacitor with poor overflow resistance.
Since the capacitor is made of an insulator that has better green resistance than the dielectric material that makes up the capacitor, it is no longer necessary to completely cover the dam 13 with the undercoat 10 and overcoat 11 as in the conventional case. It is possible to reduce the proportion of the thick capacitor on the circuit board by making the thick capacitor into a 4-type type.
以上説明したように、本発明は、厚膜コンデンサの上部
電極の引出し部分の周囲にコンデンサを構成する誘電体
よりも耐緑性のすぐれたダムが形成されているので、厚
膜コンデンサを構成する譲亀体の耐湿性を図るためのア
ンダーコートおよびオーバーコートがダムを完全被覆す
る必要はなくなり、その分だけ集積回路坂上で厚膜コン
デンサが占める割合を減少させることができる。As explained above, in the present invention, a dam is formed around the lead-out portion of the upper electrode of a thick film capacitor, which is more resistant to greenery than the dielectric material that makes up the capacitor. It is no longer necessary to completely cover the dam with an undercoat and an overcoat for making the housing moisture resistant, and the proportion of thick film capacitors on the integrated circuit board can be reduced accordingly.
第１図ａ，ｂは従釆の厚膜集積回路における厚膜コンデ
ンサを説明するための平面図とそのＡ−Ａ線断面図、第
２図は本発明による厚膜集積回路例の平面図である。
１・・・セラミック基板、２・・・下部電極、３・・・
低議電体層、４・・・高誘電体層、５・・・上部電極、
６・・・上部電極引出し部、７・・・印刷だれ、８，９
・・・譲軍体層と同一の材料よりなるダム、１０・・・
アンダーコート、１１・・・オーバーコート、１３・・
・譲露体層よりも耐湿性のすぐれた材料よりなるダム。
第２図第１図1A and 1B are a plan view and a sectional view taken along the line A-A of the thick film capacitor in a related thick film integrated circuit, and FIG. 2 is a plan view of an example of the thick film integrated circuit according to the present invention. be. 1... Ceramic substrate, 2... Lower electrode, 3...
Low dielectric layer, 4... High dielectric layer, 5... Upper electrode,
6... Upper electrode extraction part, 7... Printing sag, 8, 9
...Dam made of the same material as the concession layer, 10...
Undercoat, 11... Overcoat, 13...
- A dam made of a material with better moisture resistance than the exposed body layer. Figure 2 Figure 1
Claims (1)
電極上に形成された高誘電率材料などの耐湿性の劣る誘
電体層と該誘電体層上に形成された上部電極およびその
引出し部と、該上部電極引出し部の周囲に設けられた引
出し部のだれ防止用ダムと、前記誘電体層上を覆う耐湿
被覆層とよりなる厚膜コンデンサを含む厚膜集積回路に
おいて、前記上部電極引出し部のだれ防止用ダムをコン
デンサを構成する誘電体よりも耐湿性のすぐれた絶縁体
により形成し、かつ、前記耐湿被覆層を、少なくとも前
記誘電体層上を完全に被覆するように配設したことを特
徴とする厚膜集積回路。1 A substrate, a lower electrode formed on the substrate, a dielectric layer with poor moisture resistance such as a high dielectric constant material formed on the lower electrode, an upper electrode formed on the dielectric layer, and the In a thick film integrated circuit including a thick film capacitor comprising a lead-out part, a dam for preventing drooping of the lead-out part provided around the upper electrode lead-out part, and a moisture-resistant coating layer covering the dielectric layer, the upper part The dam for preventing drooping of the electrode lead-out portion is formed of an insulator having better moisture resistance than the dielectric material constituting the capacitor, and the moisture-resistant coating layer is arranged to completely cover at least the dielectric layer. A thick film integrated circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52039469A JPS6020888B2 (en) | 1977-04-08 | 1977-04-08 | thick film integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52039469A JPS6020888B2 (en) | 1977-04-08 | 1977-04-08 | thick film integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53124753A JPS53124753A (en) | 1978-10-31 |
| JPS6020888B2 true JPS6020888B2 (en) | 1985-05-24 |
Family
ID=12553911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52039469A Expired JPS6020888B2 (en) | 1977-04-08 | 1977-04-08 | thick film integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6020888B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0389770U (en) * | 1989-12-29 | 1991-09-12 |
-
1977
- 1977-04-08 JP JP52039469A patent/JPS6020888B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0389770U (en) * | 1989-12-29 | 1991-09-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53124753A (en) | 1978-10-31 |
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