JPS60208035A - イオンビ−ム発生装置 - Google Patents
イオンビ−ム発生装置Info
- Publication number
- JPS60208035A JPS60208035A JP59066895A JP6689584A JPS60208035A JP S60208035 A JPS60208035 A JP S60208035A JP 59066895 A JP59066895 A JP 59066895A JP 6689584 A JP6689584 A JP 6689584A JP S60208035 A JPS60208035 A JP S60208035A
- Authority
- JP
- Japan
- Prior art keywords
- substance
- laser beam
- laser
- gas discharge
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 34
- 230000005284 excitation Effects 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims description 31
- 230000005283 ground state Effects 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 4
- 239000003574 free electron Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052749 magnesium Inorganic materials 0.000 abstract description 19
- 239000011777 magnesium Substances 0.000 abstract description 18
- 150000002500 ions Chemical class 0.000 abstract description 14
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001425 magnesium ion Inorganic materials 0.000 abstract description 7
- 230000010355 oscillation Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 20
- 230000005281 excited state Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000000752 ionisation method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/24—Ion sources; Ion guns using photo-ionisation, e.g. using laser beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59066895A JPS60208035A (ja) | 1984-04-02 | 1984-04-02 | イオンビ−ム発生装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59066895A JPS60208035A (ja) | 1984-04-02 | 1984-04-02 | イオンビ−ム発生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60208035A true JPS60208035A (ja) | 1985-10-19 |
| JPH0527211B2 JPH0527211B2 (enrdf_load_stackoverflow) | 1993-04-20 |
Family
ID=13329110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59066895A Granted JPS60208035A (ja) | 1984-04-02 | 1984-04-02 | イオンビ−ム発生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60208035A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62216135A (ja) * | 1986-03-15 | 1987-09-22 | Shimadzu Corp | イオン銃 |
| US6140656A (en) * | 1995-01-10 | 2000-10-31 | Mitsubishi Denki Kabushiki Kaisha | Ion implantation apparatus, ion implantation method and semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5022999A (enrdf_load_stackoverflow) * | 1973-06-28 | 1975-03-12 |
-
1984
- 1984-04-02 JP JP59066895A patent/JPS60208035A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5022999A (enrdf_load_stackoverflow) * | 1973-06-28 | 1975-03-12 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62216135A (ja) * | 1986-03-15 | 1987-09-22 | Shimadzu Corp | イオン銃 |
| US6140656A (en) * | 1995-01-10 | 2000-10-31 | Mitsubishi Denki Kabushiki Kaisha | Ion implantation apparatus, ion implantation method and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0527211B2 (enrdf_load_stackoverflow) | 1993-04-20 |
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