JPS60206172A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60206172A
JPS60206172A JP59063938A JP6393884A JPS60206172A JP S60206172 A JPS60206172 A JP S60206172A JP 59063938 A JP59063938 A JP 59063938A JP 6393884 A JP6393884 A JP 6393884A JP S60206172 A JPS60206172 A JP S60206172A
Authority
JP
Japan
Prior art keywords
layer
base
type gaas
mask
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59063938A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318746B2 (enrdf_load_stackoverflow
Inventor
Kenichi Imamura
健一 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59063938A priority Critical patent/JPS60206172A/ja
Publication of JPS60206172A publication Critical patent/JPS60206172A/ja
Publication of JPH0318746B2 publication Critical patent/JPH0318746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP59063938A 1984-03-30 1984-03-30 半導体装置の製造方法 Granted JPS60206172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59063938A JPS60206172A (ja) 1984-03-30 1984-03-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59063938A JPS60206172A (ja) 1984-03-30 1984-03-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60206172A true JPS60206172A (ja) 1985-10-17
JPH0318746B2 JPH0318746B2 (enrdf_load_stackoverflow) 1991-03-13

Family

ID=13243785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59063938A Granted JPS60206172A (ja) 1984-03-30 1984-03-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60206172A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943583A (enrdf_load_stackoverflow) * 1972-08-30 1974-04-24
JPS5039076A (enrdf_load_stackoverflow) * 1973-08-08 1975-04-10
JPS57197862A (en) * 1981-05-29 1982-12-04 Fujitsu Ltd Active semiconductor device and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943583A (enrdf_load_stackoverflow) * 1972-08-30 1974-04-24
JPS5039076A (enrdf_load_stackoverflow) * 1973-08-08 1975-04-10
JPS57197862A (en) * 1981-05-29 1982-12-04 Fujitsu Ltd Active semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0318746B2 (enrdf_load_stackoverflow) 1991-03-13

Similar Documents

Publication Publication Date Title
US4751195A (en) Method of manufacturing a heterojunction bipolar transistor
JPH0622242B2 (ja) ヘテロ接合バイポーラトランジスタ形の半導体デバイスの製造方法
JP3439578B2 (ja) 半導体装置およびその製造方法
JP2937944B2 (ja) 非常に高利得のヘテロ接合バイポーラトランジスタを製造する方法
JPH02252267A (ja) 半導体装置の製造方法
JP2851044B2 (ja) 半導体装置の製造方法
JPS60206172A (ja) 半導体装置の製造方法
JPS6218761A (ja) ヘテロ接合トランジスタの製造方法
JP2714096B2 (ja) 半導体装置およびその製造方法
JP3350426B2 (ja) ヘテロ接合バイポーラトランジスタの製造方法
JPS62152165A (ja) バイポ−ラトランジスタの製造方法
JPH0969611A (ja) 半導体装置およびその製造方法
JPS61294857A (ja) バイポ−ラトランジスタの製造方法
JP2001298031A (ja) 接合型バイポーラトランジスタおよびその製造方法、半導体集積回路装置
JPS63107066A (ja) ヘテロ接合型バイポ−ラトランジスタ
JP2615983B2 (ja) ヘテロ接合バイポーラトランジスタの製造方法
JPS6010785A (ja) 電界効果トランジスタおよびその製造方法
KR960000384B1 (ko) 에미터 재성장을 이용한 hbt소자의 제조방법
KR100211942B1 (ko) 자기정렬형 이종접합 쌍극자 소자의 제조방법
JPS627158A (ja) ホットエレクトロントランジスタの製造方法
JPH01187863A (ja) 半導体装置
JPH08288297A (ja) ヘテロ接合バイポーラトランジスタおよびその製造方法
JPH0563012B2 (enrdf_load_stackoverflow)
JPH05275462A (ja) 化合物半導体集積回路装置
JPS60187057A (ja) 半導体装置