JPS60201636A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS60201636A
JPS60201636A JP5990584A JP5990584A JPS60201636A JP S60201636 A JPS60201636 A JP S60201636A JP 5990584 A JP5990584 A JP 5990584A JP 5990584 A JP5990584 A JP 5990584A JP S60201636 A JPS60201636 A JP S60201636A
Authority
JP
Japan
Prior art keywords
section
nitrogen
surface
implanted
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5990584A
Inventor
Makoto Otake
Shinji Sugaya
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5990584A priority Critical patent/JPS60201636A/en
Publication of JPS60201636A publication Critical patent/JPS60201636A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass

Abstract

PURPOSE:To enable plural oxide films having different thicknesses to be formed simultaneously, by oxidizing a silicon wafer after previously implanting nitrogen into the surface of a section of the silicon wafer where a thinner oxide film is to be formed. CONSTITUTION:The surface of a silicon substrate is covered with a resist film 13 in a section (a). When nitrogen ions are implanted into the silicon substrate, no nitrogen penetrates into the section (a) while the section (b) is implanted with nitrogen atoms (n). The resist film is removed after completion of the ion implantation. The substrate is then thermal oxidized under certain conditions. A thin oxide film 14 is thereby formed on the surface of the section (b) where the rate of oxidation is controlled by the presence of nitrogen. On the surface of the section (a) where no nitrogen atoms are implanted, however, a thick oxide film 15 is formed according to the conditions in accordance with the temperature and the duration of the thermal oxidation.
JP5990584A 1984-03-27 1984-03-27 Manufacture of semiconductor device Pending JPS60201636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5990584A JPS60201636A (en) 1984-03-27 1984-03-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5990584A JPS60201636A (en) 1984-03-27 1984-03-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS60201636A true JPS60201636A (en) 1985-10-12

Family

ID=13126601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5990584A Pending JPS60201636A (en) 1984-03-27 1984-03-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS60201636A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228000A (en) * 1994-07-30 1996-09-03 Lg Semicon Co Ltd Semiconductor device and its manufacture
DE19839079C2 (en) * 1998-02-27 2002-08-01 Lg Semicon Co Ltd A process for producing an insulating layer and an insulating layer structure for a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228000A (en) * 1994-07-30 1996-09-03 Lg Semicon Co Ltd Semiconductor device and its manufacture
DE19839079C2 (en) * 1998-02-27 2002-08-01 Lg Semicon Co Ltd A process for producing an insulating layer and an insulating layer structure for a semiconductor device

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