JPH03227525A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPH03227525A
JPH03227525A JP2307990A JP2307990A JPH03227525A JP H03227525 A JPH03227525 A JP H03227525A JP 2307990 A JP2307990 A JP 2307990A JP 2307990 A JP2307990 A JP 2307990A JP H03227525 A JPH03227525 A JP H03227525A
Authority
JP
Japan
Prior art keywords
spacer
impurities
film
electrode
heat treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2307990A
Inventor
Takashi Noguchi
Kazuhiro Tajima
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2307990A priority Critical patent/JPH03227525A/en
Publication of JPH03227525A publication Critical patent/JPH03227525A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To realize an LDD structure in simple steps by implanting impurities to a thin semiconductor film with a gate electrode and a spacer of its sidewall as masks, and then heat treating it.
CONSTITUTION: A gate electrode 15 is formed on a thin semiconductor film 13 through a gate insulating film 14, a spacer 16 is formed on the sidewall of the electrode 15, impurities 17 are implanted into the film 13 with the electrode 15 and the spacer 16 as masks, and the film 13 is heat treated. In this case, the impurities 17 are not implanted by masking the gate 15 only, but the impurities 17 are diffused under the spacer 15 by heat treating the film 13, thereby realizing an LDD structure. The width and heat treating conditions of the spacer 16 are selected to suppress diffusion of the impurities 17 directly under the electrode 15. Thus, the structure may be realized in simple steps.
COPYRIGHT: (C)1991,JPO&Japio
JP2307990A 1990-02-01 1990-02-01 Manufacture of thin film transistor Pending JPH03227525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2307990A JPH03227525A (en) 1990-02-01 1990-02-01 Manufacture of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2307990A JPH03227525A (en) 1990-02-01 1990-02-01 Manufacture of thin film transistor

Publications (1)

Publication Number Publication Date
JPH03227525A true JPH03227525A (en) 1991-10-08

Family

ID=12100410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2307990A Pending JPH03227525A (en) 1990-02-01 1990-02-01 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPH03227525A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534832B2 (en) 1993-09-07 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen
US7148094B2 (en) 1993-06-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US7186601B2 (en) 1994-08-26 2007-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device utilizing a catalyst material solution

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148094B2 (en) 1993-06-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US6534832B2 (en) 1993-09-07 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen
US7186601B2 (en) 1994-08-26 2007-03-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device utilizing a catalyst material solution

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