JPH04360580A - Field-effect transistor and manufacture thereof - Google Patents

Field-effect transistor and manufacture thereof

Info

Publication number
JPH04360580A
JPH04360580A JP16244491A JP16244491A JPH04360580A JP H04360580 A JPH04360580 A JP H04360580A JP 16244491 A JP16244491 A JP 16244491A JP 16244491 A JP16244491 A JP 16244491A JP H04360580 A JPH04360580 A JP H04360580A
Authority
JP
Japan
Prior art keywords
film
region
anodized
formed
form
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16244491A
Inventor
Tatsuya Miyagawa
Original Assignee
Casio Comput Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Comput Co Ltd filed Critical Casio Comput Co Ltd
Priority to JP16244491A priority Critical patent/JPH04360580A/en
Publication of JPH04360580A publication Critical patent/JPH04360580A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

PURPOSE: To reduce the number of manufacturing steps, and to efficiently form a micro-offset gate region by providing an anodized film at least on the side face of a gate electrode, and making the side of the film correspond to the boundary face between a channel region of a semiconductor layer and a source/ drain region.
CONSTITUTION: With an aluminum film 4 formed on a gate insulating film 3 of a part of a semiconductor layer 2, corresponding to a channel region 2a as a mask an ion implantation is conducted to form a source/drain region 2b. A surface of the film 4 is anodized to form an aluminum oxide film 5, and a gate electrode 6 is formed of the film 4 which is not anodized. Thus, the side of the film 5 corresponding to a boundary between the region 2a of the layer 2 and the region 2b, the thickness of the film 5 becomes a length L of an offset gate region 2c, and the region 2c can be efficiently formed.
COPYRIGHT: (C)1992,JPO&Japio
JP16244491A 1991-06-07 1991-06-07 Field-effect transistor and manufacture thereof Pending JPH04360580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16244491A JPH04360580A (en) 1991-06-07 1991-06-07 Field-effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16244491A JPH04360580A (en) 1991-06-07 1991-06-07 Field-effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH04360580A true JPH04360580A (en) 1992-12-14

Family

ID=15754733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16244491A Pending JPH04360580A (en) 1991-06-07 1991-06-07 Field-effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH04360580A (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05232515A (en) * 1991-09-25 1993-09-10 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit and its production
JPH05283694A (en) * 1991-08-23 1993-10-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH05343430A (en) * 1991-08-23 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacutre of the same
WO1994015366A1 (en) * 1992-12-24 1994-07-07 Tadahiro Ohmi Semiconductor device
JPH0730125A (en) * 1993-07-07 1995-01-31 Semiconductor Energy Lab Co Ltd Semiconductor device and its production
JPH0778782A (en) * 1993-06-18 1995-03-20 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US5439837A (en) * 1993-12-20 1995-08-08 Sharp Kabushiki Kaisha Method of fabricating a thin-film transistor having an offset gate structure
US5619045A (en) * 1993-11-05 1997-04-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US5648146A (en) * 1994-10-24 1997-07-15 Sharp Kabushiki Kaisha Metallic wiring substrate
US5672888A (en) * 1995-12-08 1997-09-30 Nec Corporation Thin-film transistor and thin-film transistor array
US5696011A (en) * 1992-03-25 1997-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming an insulated gate field effect transistor
US5736414A (en) * 1994-07-14 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5879969A (en) * 1991-03-06 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5966594A (en) * 1993-07-27 1999-10-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6004831A (en) * 1991-09-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a thin film semiconductor device
US6013929A (en) * 1997-07-08 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, having a nitride film on the gate insulation layer and an organic resin interlayer film on the transistor
US6124155A (en) * 1991-06-19 2000-09-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6140164A (en) * 1995-11-24 2000-10-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6417543B1 (en) 1993-01-18 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device with sloped gate, source, and drain regions
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Cited By (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US5879969A (en) * 1991-03-06 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6124155A (en) * 1991-06-19 2000-09-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
US6166399A (en) * 1991-06-19 2000-12-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix device including thin film transistors
US6797548B2 (en) 1991-06-19 2004-09-28 Semiconductor Energy Laboratory Co., Inc. Electro-optical device and thin film transistor and method for forming the same
US6335213B1 (en) 1991-06-19 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
JPH05283694A (en) * 1991-08-23 1993-10-29 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH05343430A (en) * 1991-08-23 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacutre of the same
US6004831A (en) * 1991-09-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a thin film semiconductor device
JPH05232515A (en) * 1991-09-25 1993-09-10 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit and its production
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US5696011A (en) * 1992-03-25 1997-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming an insulated gate field effect transistor
US6323069B1 (en) 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7109108B2 (en) 1992-10-09 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having metal silicide
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6455875B2 (en) 1992-10-09 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having enhanced field mobility
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
EP0709897A1 (en) * 1992-12-24 1996-05-01 OHMI, Tadahiro Semiconductor device
WO1994015366A1 (en) * 1992-12-24 1994-07-07 Tadahiro Ohmi Semiconductor device
EP0709897A4 (en) * 1992-12-24 1997-05-28 Tadahiro Ohmi Semiconductor device
US5650650A (en) * 1992-12-24 1997-07-22 Tadahiro Ohmi High speed semiconductor device with a metallic substrate
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6984551B2 (en) 1993-01-18 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
US6417543B1 (en) 1993-01-18 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device with sloped gate, source, and drain regions
JPH0778782A (en) * 1993-06-18 1995-03-20 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6784453B2 (en) 1993-07-07 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6569719B2 (en) 1993-07-07 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6201281B1 (en) 1993-07-07 2001-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JPH0730125A (en) * 1993-07-07 1995-01-31 Semiconductor Energy Lab Co Ltd Semiconductor device and its production
US6465284B2 (en) 1993-07-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US5966594A (en) * 1993-07-27 1999-10-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6210997B1 (en) 1993-07-27 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US5619045A (en) * 1993-11-05 1997-04-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US5439837A (en) * 1993-12-20 1995-08-08 Sharp Kabushiki Kaisha Method of fabricating a thin-film transistor having an offset gate structure
US5736414A (en) * 1994-07-14 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5648146A (en) * 1994-10-24 1997-07-15 Sharp Kabushiki Kaisha Metallic wiring substrate
US6140164A (en) * 1995-11-24 2000-10-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5672888A (en) * 1995-12-08 1997-09-30 Nec Corporation Thin-film transistor and thin-film transistor array
US6013929A (en) * 1997-07-08 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, having a nitride film on the gate insulation layer and an organic resin interlayer film on the transistor
US6501132B1 (en) 1997-07-08 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Transistor with variable channel width

Similar Documents

Publication Publication Date Title
JPH04256360A (en) Manufacture of semiconductor device
JPH03187272A (en) Mos type field effect transistor and manufacture thereof
JPS60182171A (en) Manufacture of semiconductor device
JPS60137070A (en) Manufacture of semiconductor device
JPS60213062A (en) Manufacture of thin-film transistor
JPH02148738A (en) Manufacture of field effect transistor
JPS59229876A (en) Manufacture of schottky gate type field effect transistor
JPH0372681A (en) Manufacture of semiconductor device
JPS60194568A (en) Semiconductor ic device
JPH01231376A (en) Manufacture of thin film transistor
EP0085916A3 (en) Method of fabricating field effect transistors
JPS60241256A (en) Semiconductor device and manufacture thereof
JPS62113474A (en) Manufacture of semiconductor integrated circuit
JPH02253632A (en) Manufacture of field effect transistor
JPH03165575A (en) Thin film transistor and manufacture thereof
JPH03211885A (en) Semiconductor device and manufacture thereof
JPS5696854A (en) Semiconductor memory device
JPS5978557A (en) Manufacture of complementary metallic oxide semiconductor device
JPS6028271A (en) Vertical type mosfet
JPS60186053A (en) Thin film complementary mos circuit
JPH04360580A (en) Field-effect transistor and manufacture thereof
JPS5832466A (en) Manufacture of mosfet
JPS5974674A (en) Insulation gate semiconductor device and manufacture thereof
JPH04186732A (en) Semiconductor device and manufacture thereof
JPS62126675A (en) Semiconductor device and manufacture thereof