JPS60200887A - 磁性薄膜の製造方法 - Google Patents
磁性薄膜の製造方法Info
- Publication number
- JPS60200887A JPS60200887A JP5578784A JP5578784A JPS60200887A JP S60200887 A JPS60200887 A JP S60200887A JP 5578784 A JP5578784 A JP 5578784A JP 5578784 A JP5578784 A JP 5578784A JP S60200887 A JPS60200887 A JP S60200887A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- substrate
- rare earth
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052742 iron Inorganic materials 0.000 claims abstract description 30
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 29
- 239000002223 garnet Substances 0.000 claims abstract description 27
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 65
- 239000010408 film Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 14
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 230000003746 surface roughness Effects 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- -1 rare earth iron oxide Chemical class 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 241000134884 Ericales Species 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- KSCFJBIXMNOVSH-UHFFFAOYSA-N dyphylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1N(CC(O)CO)C=N2 KSCFJBIXMNOVSH-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/16—Layers for recording by changing the magnetic properties, e.g. for Curie-point-writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
- G11B11/10591—Details for improving write-in properties, e.g. Curie-point temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5578784A JPS60200887A (ja) | 1984-03-23 | 1984-03-23 | 磁性薄膜の製造方法 |
| EP19840904169 EP0196332B1 (en) | 1983-11-17 | 1984-11-15 | Method of manufacturing photothermomagnetic recording film |
| PCT/JP1984/000547 WO1985002292A1 (en) | 1983-11-17 | 1984-11-15 | Method of manufacturing photothermomagnetic recording film |
| DE8484904169T DE3482886D1 (de) | 1983-11-17 | 1984-11-15 | Verfahren zur herstellung photothermomagnetischer aufzeichnungsfilme. |
| US06/763,789 US4608142A (en) | 1983-11-17 | 1984-11-15 | Method of manufacturing magneto-optic recording film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5578784A JPS60200887A (ja) | 1984-03-23 | 1984-03-23 | 磁性薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60200887A true JPS60200887A (ja) | 1985-10-11 |
| JPH0457637B2 JPH0457637B2 (enrdf_load_stackoverflow) | 1992-09-14 |
Family
ID=13008613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5578784A Granted JPS60200887A (ja) | 1983-11-17 | 1984-03-23 | 磁性薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60200887A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124213A (ja) * | 1984-07-03 | 1986-02-01 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | ビスマス置換フエリ磁性ガーネツト フイルムの形成方法 |
| JPH01110715A (ja) * | 1987-10-23 | 1989-04-27 | Yaskawa Electric Mfg Co Ltd | 強磁性薄膜の形成方法 |
| US6759137B1 (en) | 1998-08-28 | 2004-07-06 | Centre National De La Recherche Scientifique, Inc. | Opto-magnetic recording medium with a garnet ferrite recording layer, and opto-magnetic information recording/reproducing device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5033114A (enrdf_load_stackoverflow) * | 1973-07-27 | 1975-03-31 | ||
| JPS5613710A (en) * | 1979-07-13 | 1981-02-10 | Nec Corp | Material for magnetic element |
| JPS5659694A (en) * | 1979-10-18 | 1981-05-23 | Agency Of Ind Science & Technol | Manufacture of thin film |
| JPS58116739A (ja) * | 1981-12-29 | 1983-07-12 | Matsushita Electric Ind Co Ltd | 膜多結晶体の粒子サイズの制御方法 |
-
1984
- 1984-03-23 JP JP5578784A patent/JPS60200887A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5033114A (enrdf_load_stackoverflow) * | 1973-07-27 | 1975-03-31 | ||
| JPS5613710A (en) * | 1979-07-13 | 1981-02-10 | Nec Corp | Material for magnetic element |
| JPS5659694A (en) * | 1979-10-18 | 1981-05-23 | Agency Of Ind Science & Technol | Manufacture of thin film |
| JPS58116739A (ja) * | 1981-12-29 | 1983-07-12 | Matsushita Electric Ind Co Ltd | 膜多結晶体の粒子サイズの制御方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124213A (ja) * | 1984-07-03 | 1986-02-01 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | ビスマス置換フエリ磁性ガーネツト フイルムの形成方法 |
| JPH01110715A (ja) * | 1987-10-23 | 1989-04-27 | Yaskawa Electric Mfg Co Ltd | 強磁性薄膜の形成方法 |
| US6759137B1 (en) | 1998-08-28 | 2004-07-06 | Centre National De La Recherche Scientifique, Inc. | Opto-magnetic recording medium with a garnet ferrite recording layer, and opto-magnetic information recording/reproducing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0457637B2 (enrdf_load_stackoverflow) | 1992-09-14 |
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