JPS60194565A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60194565A
JPS60194565A JP59051623A JP5162384A JPS60194565A JP S60194565 A JPS60194565 A JP S60194565A JP 59051623 A JP59051623 A JP 59051623A JP 5162384 A JP5162384 A JP 5162384A JP S60194565 A JPS60194565 A JP S60194565A
Authority
JP
Japan
Prior art keywords
electrode
control electrode
gate
main
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59051623A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530076B2 (https=
Inventor
Futoshi Tokuno
徳能　太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59051623A priority Critical patent/JPS60194565A/ja
Priority to KR1019850001124A priority patent/KR890004468B1/ko
Priority to US06/711,823 priority patent/US4719500A/en
Priority to DE8585301817T priority patent/DE3572424D1/de
Priority to EP19850301817 priority patent/EP0159797B1/en
Publication of JPS60194565A publication Critical patent/JPS60194565A/ja
Priority to US07/103,042 priority patent/US4835119A/en
Publication of JPH0530076B2 publication Critical patent/JPH0530076B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
JP59051623A 1984-03-15 1984-03-15 半導体装置 Granted JPS60194565A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59051623A JPS60194565A (ja) 1984-03-15 1984-03-15 半導体装置
KR1019850001124A KR890004468B1 (ko) 1984-03-15 1985-02-22 반도체 장치
US06/711,823 US4719500A (en) 1984-03-15 1985-03-14 Semiconductor device and a process of producing same
DE8585301817T DE3572424D1 (en) 1984-03-15 1985-03-15 Thyristor device and process for producing it
EP19850301817 EP0159797B1 (en) 1984-03-15 1985-03-15 Thyristor device and process for producing it
US07/103,042 US4835119A (en) 1984-03-15 1987-09-30 Semiconductor device and a process of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59051623A JPS60194565A (ja) 1984-03-15 1984-03-15 半導体装置

Publications (2)

Publication Number Publication Date
JPS60194565A true JPS60194565A (ja) 1985-10-03
JPH0530076B2 JPH0530076B2 (https=) 1993-05-07

Family

ID=12891993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59051623A Granted JPS60194565A (ja) 1984-03-15 1984-03-15 半導体装置

Country Status (5)

Country Link
US (2) US4719500A (https=)
EP (1) EP0159797B1 (https=)
JP (1) JPS60194565A (https=)
KR (1) KR890004468B1 (https=)
DE (1) DE3572424D1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269322A (ja) * 1986-05-17 1987-11-21 Toshiba Corp 電力用半導体装置
JPH0246742A (ja) * 1988-08-09 1990-02-16 Toshiba Corp 圧接平型半導体装置
US6707144B2 (en) 2002-03-28 2004-03-16 Mitsubishi Denki Kabushiki Kaisha Insulated high speed semiconductor switching device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113249A (ja) * 1984-11-08 1986-05-31 Mitsubishi Electric Corp 半導体装置
DE3880730D1 (de) * 1987-03-25 1993-06-09 Bbc Brown Boveri & Cie Halbleiterbauelement mit einer steuerelektrode.
JP2502386B2 (ja) * 1989-04-11 1996-05-29 富士電機株式会社 半導体装置
JPH04352457A (ja) * 1991-05-30 1992-12-07 Mitsubishi Electric Corp 圧接型半導体装置及びその製造方法
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
JP3469304B2 (ja) * 1994-04-12 2003-11-25 三菱電機株式会社 半導体装置
DE4431294A1 (de) * 1994-09-02 1996-03-07 Abb Management Ag Abschaltbarer Thyristor für hohe Blockierspannungen und kleiner Bauelementdicke
DE19505387A1 (de) * 1995-02-17 1996-08-22 Abb Management Ag Druckkontaktgehäuse für Halbleiterbauelemente
JP3018971B2 (ja) * 1995-12-18 2000-03-13 富士電機株式会社 半導体装置
JP4129082B2 (ja) * 1998-07-30 2008-07-30 三菱電機株式会社 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置
JP3609430B2 (ja) * 1999-01-18 2005-01-12 三菱電機株式会社 圧接型半導体装置
JP5040234B2 (ja) * 2006-09-26 2012-10-03 三菱電機株式会社 圧接型半導体装置
WO2015154908A1 (en) * 2014-04-10 2015-10-15 Abb Technology Ag Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same
RU2591744C2 (ru) * 2014-12-08 2016-07-20 Открытое акционерное общество "Электровыпрямитель" Тиристор
CN111681995B (zh) * 2020-04-29 2022-09-09 株洲中车时代半导体有限公司 晶闸管元件、晶闸管元件装配结构及软启动器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130969A (en) * 1980-03-18 1981-10-14 Hitachi Ltd Semiconductor device
JPS6055633A (ja) * 1983-09-07 1985-03-30 Hitachi Ltd 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559001A (en) * 1968-08-21 1971-01-26 Motorola Inc Semiconductor housing assembly
US3636419A (en) * 1969-07-11 1972-01-18 Siemens Ag Pressure-biased semiconductor component free from damage to semiconductor body
JPS55121654A (en) * 1979-03-13 1980-09-18 Toshiba Corp Compression bonded semiconductor device
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS5762562A (en) * 1980-10-03 1982-04-15 Hitachi Ltd Semiconductor device
JPS5788770A (en) * 1980-11-21 1982-06-02 Hitachi Ltd Photo semiconductor device
JPS58148433A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPS594033A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 圧接型半導体装置
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130969A (en) * 1980-03-18 1981-10-14 Hitachi Ltd Semiconductor device
JPS6055633A (ja) * 1983-09-07 1985-03-30 Hitachi Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269322A (ja) * 1986-05-17 1987-11-21 Toshiba Corp 電力用半導体装置
JPH0246742A (ja) * 1988-08-09 1990-02-16 Toshiba Corp 圧接平型半導体装置
US6707144B2 (en) 2002-03-28 2004-03-16 Mitsubishi Denki Kabushiki Kaisha Insulated high speed semiconductor switching device

Also Published As

Publication number Publication date
DE3572424D1 (en) 1989-09-21
KR850006654A (ko) 1985-10-14
EP0159797B1 (en) 1989-08-16
US4835119A (en) 1989-05-30
KR890004468B1 (ko) 1989-11-04
US4719500A (en) 1988-01-12
EP0159797A3 (en) 1987-03-25
EP0159797A2 (en) 1985-10-30
JPH0530076B2 (https=) 1993-05-07

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