JPS60194077A - 堆積膜形成装置 - Google Patents

堆積膜形成装置

Info

Publication number
JPS60194077A
JPS60194077A JP4713984A JP4713984A JPS60194077A JP S60194077 A JPS60194077 A JP S60194077A JP 4713984 A JP4713984 A JP 4713984A JP 4713984 A JP4713984 A JP 4713984A JP S60194077 A JPS60194077 A JP S60194077A
Authority
JP
Japan
Prior art keywords
substrate holder
substrates
deposited film
film forming
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4713984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6214226B2 (enrdf_load_stackoverflow
Inventor
Tatsumi Shoji
辰美 庄司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP4713984A priority Critical patent/JPS60194077A/ja
Publication of JPS60194077A publication Critical patent/JPS60194077A/ja
Publication of JPS6214226B2 publication Critical patent/JPS6214226B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP4713984A 1984-03-14 1984-03-14 堆積膜形成装置 Granted JPS60194077A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4713984A JPS60194077A (ja) 1984-03-14 1984-03-14 堆積膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4713984A JPS60194077A (ja) 1984-03-14 1984-03-14 堆積膜形成装置

Publications (2)

Publication Number Publication Date
JPS60194077A true JPS60194077A (ja) 1985-10-02
JPS6214226B2 JPS6214226B2 (enrdf_load_stackoverflow) 1987-04-01

Family

ID=12766773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4713984A Granted JPS60194077A (ja) 1984-03-14 1984-03-14 堆積膜形成装置

Country Status (1)

Country Link
JP (1) JPS60194077A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012017511A (ja) * 2010-07-09 2012-01-26 Optorun Co Ltd 成膜基板ホルダ及び成膜装置
WO2013042247A1 (ja) * 2011-09-22 2013-03-28 株式会社シンクロン 薄膜形成装置
CN103014617A (zh) * 2011-09-22 2013-04-03 株式会社新柯隆 薄膜形成装置
JP2013079440A (ja) * 2011-09-22 2013-05-02 Shincron:Kk 薄膜形成装置
CN108520859A (zh) * 2018-03-28 2018-09-11 武汉华星光电技术有限公司 一种蚀刻设备
WO2021227133A1 (zh) * 2020-05-13 2021-11-18 深圳市纳设智能装备有限公司 一种用于cvd设备的反应室涡轮结构
CN115058691A (zh) * 2022-06-23 2022-09-16 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法
CN115110038A (zh) * 2022-06-29 2022-09-27 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012017511A (ja) * 2010-07-09 2012-01-26 Optorun Co Ltd 成膜基板ホルダ及び成膜装置
WO2013042247A1 (ja) * 2011-09-22 2013-03-28 株式会社シンクロン 薄膜形成装置
CN103014617A (zh) * 2011-09-22 2013-04-03 株式会社新柯隆 薄膜形成装置
JP2013079440A (ja) * 2011-09-22 2013-05-02 Shincron:Kk 薄膜形成装置
KR101287652B1 (ko) * 2011-09-22 2013-07-24 신크론 컴퍼니 리미티드 박막 형성장치
US9499897B2 (en) 2011-09-22 2016-11-22 Shincron Co., Ltd. Thin film forming apparatus
CN108520859A (zh) * 2018-03-28 2018-09-11 武汉华星光电技术有限公司 一种蚀刻设备
CN108520859B (zh) * 2018-03-28 2020-11-06 武汉华星光电技术有限公司 一种蚀刻设备
WO2021227133A1 (zh) * 2020-05-13 2021-11-18 深圳市纳设智能装备有限公司 一种用于cvd设备的反应室涡轮结构
CN115058691A (zh) * 2022-06-23 2022-09-16 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法
CN115110038A (zh) * 2022-06-29 2022-09-27 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法
CN115110038B (zh) * 2022-06-29 2024-01-12 北海惠科半导体科技有限公司 蒸发镀膜装置和镀膜方法

Also Published As

Publication number Publication date
JPS6214226B2 (enrdf_load_stackoverflow) 1987-04-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term