JPS6018941A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6018941A
JPS6018941A JP58126645A JP12664583A JPS6018941A JP S6018941 A JPS6018941 A JP S6018941A JP 58126645 A JP58126645 A JP 58126645A JP 12664583 A JP12664583 A JP 12664583A JP S6018941 A JPS6018941 A JP S6018941A
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
transparent resin
semiconductor
glass plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58126645A
Other languages
English (en)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58126645A priority Critical patent/JPS6018941A/ja
Publication of JPS6018941A publication Critical patent/JPS6018941A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体素子の実装に係り、とりわけ、光１！ｆ
：Ｉ躬を要するイメージ・センサー、ＢＰ−ＲＯＭ等の
半導体装置の実装置、ｌ、“ｉ遣に関する。
従来、イメージＯセンサーやＥＰ−ＲＯＭ等の光器ｎ」
を蒙する半導体装置は、第１図に断面図で示ず如き（１
°（ｊ　ｊ’＋’、ｉからなっていた。すなわち、ＩＪ
　−ド線２を含むセラミック・ノマツケージ１には半導
体素子３が組立てられ、前記セラミック・〕ぐツケージ
１にはガラス板５が貼イｊけられた金）Ｊｊキャップ４
が貼イ」けて実装され、半導体素子１の表面にはガラス
窓５から光照射が角部となすのが通例であった。
しかし、上記従来技術１ｃよると、ガラス窓５が取扱い
時に割れる等の欠点があった。
本発明はかかる従来技術の欠点をなくシ、ガラス窓付き
の半導体装ｆｉ？において、取扱い時のガラス窓の割れ
等の欠点のない半導体装（ｉ’′ｉを提供することを目
的とする。
上記目的を達成するだめの本発明の基本的な構成は、半
導体装１；ヱにおいて、少なくとも半導体素子表面には
透明（ａ・１脂か形成あるいは埋め込まれ、；亥透明樹
脂表・面には石英板、サファイヤ板またはガラス板が取
（Ｊけられ、あるいはＪ’ａ！ｉ角りられて成ることを
特徴とする。
以下、実７４■例により本発明を詳述する。
第２図は不発１ｖＪの一実施例を示す半導体装置の断面
図である。リードフレーム１２には半導体素子１３が組
立てられ、透明樹脂１１により封止され、該透明樹脂１
１の半導体素子１３の表面側にガラス板１４が貼付けら
れて成る。
他の実施例として、例えば第１図のセラミック封止の空
間にシリコーン・オイルやゲル状透明樹脂、あるいは透
明プラスチックを固化したもので埋める等の方法もある
。
本発明のごとく、半導体素子表面に透明樹脂を付け、そ
の上にガラス窓を形成することにより、半導体装置の取
扱い時にガラス窓が割れることがない等の効果がある。
本発明は、イメージ・センサー、ラインゆセンサー、Ｂ
Ｐ−ＲＯＭあるいはレーザー書き込み。
修正素子等の半導体装置に応用される。
【図面の簡単な説明】
第１図は従来技術による半導体装置の断面図、第２図は
本発明の一実施例を示す半導体装置の断面図である。 １・・・・・・ヤラミック・パッケージ２　、１２・・
・・・・リード線 ３．１３・・・・・・半導体素子 ４・・・・・・キャップ ５．１４・・・・・・ガラス窓 以　上

Claims (1)

    【特許請求の範囲】
  1. 少なくとも半導体素子表面には透明樹脂が形成あるいは
    埋め込まれ、該透明ＩＱＪ脂表面表面石英板、サファイ
    ヤ板またはガラス板が取イ」けられ、あるいは貼付けら
    れて成ることを特徴とする半導体装置。
JP58126645A 1983-07-12 1983-07-12 半導体装置 Pending JPS6018941A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58126645A JPS6018941A (ja) 1983-07-12 1983-07-12 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58126645A JPS6018941A (ja) 1983-07-12 1983-07-12 半導体装置

Publications (1)

Publication Number Publication Date
JPS6018941A true JPS6018941A (ja) 1985-01-31

Family

ID=14940324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58126645A Pending JPS6018941A (ja) 1983-07-12 1983-07-12 半導体装置

Country Status (1)

Country Link
JP (1) JPS6018941A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0253664A2 (en) * 1986-07-16 1988-01-20 Canon Kabushiki Kaisha Semiconductor photo-sensor and method for manufacturing the same
JPS6422035A (en) * 1987-07-17 1989-01-25 Nec Corp Semiconductor device
JPH0226080A (ja) * 1988-07-14 1990-01-29 Olympus Optical Co Ltd 半導体素子
US4965642A (en) * 1985-04-22 1990-10-23 U.S. Philips Corporation Semiconductor device having a laser printable envelope
US5098630A (en) * 1985-03-08 1992-03-24 Olympus Optical Co., Ltd. Method of molding a solid state image pickup device
KR100945445B1 (ko) 2008-05-16 2010-03-05 삼성전기주식회사 웨이퍼 레벨 카메라 모듈 및 그 제조방법

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098630A (en) * 1985-03-08 1992-03-24 Olympus Optical Co., Ltd. Method of molding a solid state image pickup device
US4965642A (en) * 1985-04-22 1990-10-23 U.S. Philips Corporation Semiconductor device having a laser printable envelope
EP0253664A2 (en) * 1986-07-16 1988-01-20 Canon Kabushiki Kaisha Semiconductor photo-sensor and method for manufacturing the same
US5912504A (en) * 1986-07-16 1999-06-15 Canon Kabushiki Kaisha Semiconductor photo-sensor and method for manufacturing the same
JPS6422035A (en) * 1987-07-17 1989-01-25 Nec Corp Semiconductor device
JPH0226080A (ja) * 1988-07-14 1990-01-29 Olympus Optical Co Ltd 半導体素子
KR100945445B1 (ko) 2008-05-16 2010-03-05 삼성전기주식회사 웨이퍼 레벨 카메라 모듈 및 그 제조방법

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