JPS60189226A - コ−テイング膜 - Google Patents

コ−テイング膜

Info

Publication number
JPS60189226A
JPS60189226A JP59045103A JP4510384A JPS60189226A JP S60189226 A JPS60189226 A JP S60189226A JP 59045103 A JP59045103 A JP 59045103A JP 4510384 A JP4510384 A JP 4510384A JP S60189226 A JPS60189226 A JP S60189226A
Authority
JP
Japan
Prior art keywords
film
boron
coating film
silicon carbide
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59045103A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0345896B2 (enExample
Inventor
Hiroshi Taniguchi
浩 谷口
Yoshihisa Fujii
藤井 良久
Takuro Yamashita
山下 卓郎
Masaru Yoshida
勝 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59045103A priority Critical patent/JPS60189226A/ja
Publication of JPS60189226A publication Critical patent/JPS60189226A/ja
Publication of JPH0345896B2 publication Critical patent/JPH0345896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP59045103A 1984-03-08 1984-03-08 コ−テイング膜 Granted JPS60189226A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59045103A JPS60189226A (ja) 1984-03-08 1984-03-08 コ−テイング膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59045103A JPS60189226A (ja) 1984-03-08 1984-03-08 コ−テイング膜

Publications (2)

Publication Number Publication Date
JPS60189226A true JPS60189226A (ja) 1985-09-26
JPH0345896B2 JPH0345896B2 (enExample) 1991-07-12

Family

ID=12709949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59045103A Granted JPS60189226A (ja) 1984-03-08 1984-03-08 コ−テイング膜

Country Status (1)

Country Link
JP (1) JPS60189226A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283838A (ja) * 1988-05-10 1989-11-15 Toshiba Corp 半導体装置
WO2016204208A1 (ja) * 2015-06-19 2016-12-22 株式会社村田製作所 モジュールおよびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52111379A (en) * 1976-03-16 1977-09-19 Toshiba Corp Semi-conductor device
JPS5666086A (en) * 1979-11-05 1981-06-04 Hitachi Ltd Electrically insulating board
JPS5840831A (ja) * 1982-08-13 1983-03-09 Hitachi Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52111379A (en) * 1976-03-16 1977-09-19 Toshiba Corp Semi-conductor device
JPS5666086A (en) * 1979-11-05 1981-06-04 Hitachi Ltd Electrically insulating board
JPS5840831A (ja) * 1982-08-13 1983-03-09 Hitachi Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283838A (ja) * 1988-05-10 1989-11-15 Toshiba Corp 半導体装置
WO2016204208A1 (ja) * 2015-06-19 2016-12-22 株式会社村田製作所 モジュールおよびその製造方法
US10256195B2 (en) 2015-06-19 2019-04-09 Murata Manufacturing Co., Ltd. Module and method for manufacturing same

Also Published As

Publication number Publication date
JPH0345896B2 (enExample) 1991-07-12

Similar Documents

Publication Publication Date Title
US5514904A (en) Semiconductor device with monocrystalline gate insulating film
JPS61210518A (ja) 磁気記録媒体の製造方法
US4124736A (en) Surface protected magnetic recording members
JPS61122925A (ja) 記録媒体の製造方法
CN2812302Y (zh) 可降低启始电压偏移的薄膜晶体管结构
KR850007504A (ko) 수직 자기 기록매체
JPS60189226A (ja) コ−テイング膜
JPS60184681A (ja) コーティング用非晶質炭化珪素膜の形成方法
ES2140496T3 (es) Sustrato de metal duro con una capa de diamante de alta adherencia.
KR960016231B1 (en) Semiconductor metal wire forming method
US9318141B2 (en) Recording medium
JPS6234324A (ja) 磁気記録媒体
Burghaus MONTE CARLO SIMULATION OF ADSORPTION PROBABILITIES: THE CASE OF CO/DISORDERED–Cu (110) AND CO/O–Ir (110)
JP2007018869A (ja) 透明導電性フィルム及びタッチパネル
KR930014316A (ko) 박막 자기 기록 디스크
JPH0376462A (ja) イメージセンサ多数個取用大面積基板およびイメージセンサ
JP2843851B2 (ja) 再生専用光カード
JPS57141977A (en) Photoelectric transducing semiconductor device
JPS6311274A (ja) ワイヤソ−用ワイヤ
JP2665949B2 (ja) 薄膜磁気ヘッド
JPS6277476A (ja) 保護膜及びその製造法
JPH03256220A (ja) 磁気ディスク及びその製造方法
JP2002150529A (ja) 磁気記録媒体
Tomg et al. Deposition and Characterization of Carbon Films Produced by Nitrogen/Argon Mixture RF Sputtering
JPS6089820A (ja) 磁気記録媒体