JPS60181369U - plasma etching equipment - Google Patents
plasma etching equipmentInfo
- Publication number
- JPS60181369U JPS60181369U JP6920384U JP6920384U JPS60181369U JP S60181369 U JPS60181369 U JP S60181369U JP 6920384 U JP6920384 U JP 6920384U JP 6920384 U JP6920384 U JP 6920384U JP S60181369 U JPS60181369 U JP S60181369U
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- reactive gas
- plasma etching
- temperature detection
- detection mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のプラズマエツチング装置の例の構成を示
す模式断面図、第２図はこの考案の一実施例の構成を示
す模式断面図である。
図において、１−は反応室、２は反応性ガス導入 。
口、５ａは下部電極、９は被エツチング部材、１
′０１は加熱機構、１１は温度検出機構、１２は温度
検出機構である。なお、図中同一符号は同一または相当
部分を示す。FIG. 1 is a schematic sectional view showing the structure of an example of a conventional plasma etching apparatus, and FIG. 2 is a schematic sectional view showing the structure of an embodiment of this invention. In the figure, 1- is the reaction chamber and 2 is the reactive gas introduction. 5a is a lower electrode, 9 is a member to be etched, 1
'01 is a heating mechanism, 11 is a temperature detection mechanism, and 12 is a temperature detection mechanism. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
ラズマを発生させ、上記反応室内に配設された下部電極
の上に載置された被エツチング部材にプラズマエツチン
グを施すものにおいて、上記下部電極の表面の温度を検
出する温度検出機構、上記反応性ガス導入口に設けられ
これを通って導入される上記反応性ガスを昇温させる加
熱機構、及び上記温度検出機構による温度検出出力に応
じて、上記加熱機構への供給電力を制御して上記導入反
応性ガスの温度を所要値に保持し、上記下部電極と上記
被エツチング部材を所望の一定温度に保持する温度制御
機構を備えたことを特徴とするプラズマエツチング装置
。A reactive gas is introduced into a reaction chamber from a reactive gas inlet to generate plasma, and a member to be etched placed on a lower electrode disposed in the reaction chamber is subjected to plasma etching. A temperature detection mechanism that detects the temperature of the surface of the electrode, a heating mechanism that is provided at the reactive gas inlet and raises the temperature of the reactive gas introduced through this, and a temperature detection mechanism that responds to the temperature detection output of the temperature detection mechanism. and a temperature control mechanism that controls power supplied to the heating mechanism to maintain the temperature of the introduced reactive gas at a desired value, and maintains the lower electrode and the member to be etched at a desired constant temperature. A plasma etching device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6920384U JPS60181369U (en) | 1984-05-10 | 1984-05-10 | plasma etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6920384U JPS60181369U (en) | 1984-05-10 | 1984-05-10 | plasma etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60181369U true JPS60181369U (en) | 1985-12-02 |
| JPS6329735Y2 JPS6329735Y2 (en) | 1988-08-09 |
Family
ID=30604653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6920384U Granted JPS60181369U (en) | 1984-05-10 | 1984-05-10 | plasma etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60181369U (en) |
-
1984
- 1984-05-10 JP JP6920384U patent/JPS60181369U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6329735Y2 (en) | 1988-08-09 |
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