JPS60176245A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS60176245A
JPS60176245A JP59031413A JP3141384A JPS60176245A JP S60176245 A JPS60176245 A JP S60176245A JP 59031413 A JP59031413 A JP 59031413A JP 3141384 A JP3141384 A JP 3141384A JP S60176245 A JPS60176245 A JP S60176245A
Authority
JP
Japan
Prior art keywords
wire
distance
bonding
terminal group
connection terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59031413A
Other languages
Japanese (ja)
Other versions
JPH0527252B2 (en
Inventor
Zensaku Watanabe
渡辺 善作
Hitoshi Chiyoma
仁 千代間
Kuniaki Kida
木田 国明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59031413A priority Critical patent/JPS60176245A/en
Publication of JPS60176245A publication Critical patent/JPS60176245A/en
Publication of JPH0527252B2 publication Critical patent/JPH0527252B2/ja
Granted legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0615Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/06153Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry with a staggered arrangement, e.g. depopulated array
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494Connecting portions
    • H01L2224/4943Connecting portions the connecting portions being staggered
    • H01L2224/49431Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494Connecting portions
    • H01L2224/4943Connecting portions the connecting portions being staggered
    • H01L2224/49433Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
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    • H01L2224/78Apparatus for connecting with wire connectors
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    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To reduce contact troubles between wires and to contrive to obtain highly compacted product, by a method wherein the specific relation is designed between the position difference of the first connecting terminal group and the second connecting terminal group, and the distance of bonding positions of corresponding terminal couples. CONSTITUTION:The first connecting terminal group 11 which is composed of zigzag type connecting terminals 111, 112 of a resistance base plate 40 and the second connecting terminal group 21 which are composed of zigzag type connecting terminals 211, 212 of a integrated circuit 2 on a drive base plate 41 keep an appropriate distance, and are placed and adhered on a heat sink 42. In this case, the ratio between the step differene (h) between bonding positions and the near distance OSL and the long distance ISL between the bonding position are made h/ISL=0.40-0.45 and h/OSL=0.50-0.60.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はワイヤボンディング方法に係り、特にファクシ
ミリなどに用いられるサーマルプリンティングヘッドや
金融機器などに用いられる密着型イメージセンサ等の段
差を介し、相対向して高密度に配置された接続端子間を
ワイヤリングする際にワイヤ間の接触も少なく、また接
触の修繕も容易にして、段差を有する接続端子間を高信
頼性をもってワイヤリングすることが可能なワイヤボン
ディング方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding method, and particularly relates to a wire bonding method for wire bonding, and in particular, for bonding wire bonding between two Wire that reduces contact between wires when wiring between connecting terminals that are arranged in high density, and also makes it easy to repair contacts, making it possible to wire with high reliability between connecting terminals that have differences in level. The present invention relates to a bonding method.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

例えばファクシミリに使用されているサーマルプリンテ
ィングヘッドを第1図及び第2図により説明する。
For example, a thermal printing head used in a facsimile machine will be explained with reference to FIGS. 1 and 2.

即ち、セラミック等の絶縁基板上に薄膜技術や厚膜技術
によって一列に高密度に並べられた複数の発熱抵抗体(
1)と、シフトレジスタ、トランジスタドライブ及びセ
レクタからなる発熱抵抗体駆動用集積回路(以下集積回
路という)(2)と各発熱抵抗体(1)の一端(10)
を共通接続した共通電極(3)と、各発熱抵抗体(1)
を集積回路(2)を介して選択的に通電発熱させるため
の入力信号群(4)を主構成とし、各発熱抵抗体(1)
からの第1の接続端子群(11)は選択的に出力される
集積回路(2)からの第2の接続端子群(21)に対応
するように設けられ、それぞれの接続端子間はワイヤの
ボンディングにより接続されている。
In other words, a plurality of heat generating resistors (
1), an integrated circuit for driving a heating resistor (hereinafter referred to as an integrated circuit) consisting of a shift register, a transistor drive, and a selector (2), and one end (10) of each heating resistor (1)
A common electrode (3) commonly connected to each heating resistor (1)
The main structure is an input signal group (4) for selectively energizing and generating heat via an integrated circuit (2), and each heating resistor (1)
The first group of connection terminals (11) from the integrated circuit (2) are provided so as to correspond to the second group of connection terminals (21) from the integrated circuit (2) which are selectively output, and the connection terminals are connected by wires. Connected by bonding.

この第2の接続端子群(21)の接続端子数は、一般に
集束回路(2)1個当り32の接続端子のものが経済的
に優れているといわれている。従って発熱抵抗体(1)
は32個単位で集積回路(2)からの第2の接続端子群
(21)と接続されること、になる。図において(5)
は集積回路(2)の出力信号用端子、(6)は集積回路
(2)への電源である。
Regarding the number of connection terminals in this second connection terminal group (21), it is generally said that 32 connection terminals per convergent circuit (2) is economically superior. Therefore, the heating resistor (1)
are connected to the second connection terminal group (21) from the integrated circuit (2) in units of 32. In the figure (5)
is an output signal terminal of the integrated circuit (2), and (6) is a power supply to the integrated circuit (2).

このような構造のサーマルプリンティングヘッドによる
ファクシミリの記録は所定の発熱抵抗体(1)を選択的
に通電して発熱させ、発熱抵抗体(1)に熱転写フィル
ムを接触させ、この熱転写フィルムを介して普通紙に転
写されるようになっている。
To record a facsimile using a thermal printing head with such a structure, a predetermined heating resistor (1) is selectively energized to generate heat, a thermal transfer film is brought into contact with the heating resistor (1), and the image is printed via the thermal transfer film. It is designed to be transferred onto plain paper.

この状態を第2図により説明すると、発熱抵抗体(1)
を高密度で紙面に直角方向に一列に並べたセラミックな
どの抵抗、基板(40)と、集束回路(2)を煕設した
ドライブ基板(41+)及び共通電極(3)を配設した
共通電極基板(412)とはアルミニウム等の金属から
なるヒートシンク(42)上に載置固定されている。
To explain this state using FIG. 2, the heating resistor (1)
ceramic resistors and substrates (40) arranged with high density in a row perpendicular to the plane of the paper, a drive substrate (41+) on which a focusing circuit (2) is installed, and a common electrode on which a common electrode (3) is arranged. The substrate (412) is mounted and fixed on a heat sink (42) made of metal such as aluminum.

この発熱抵抗体(1)上には熱軟化性インクを塗付した
熱転写フィルム(43)、普通紙(44)が発熱抵抗体
(1)と、この発熱抵抗体(1)に圧接摺動するプラテ
ンローラ(45)との間に挿入されており、このプラテ
ンローラ(45)の矢印(45t)方向の回転により熱
転写フィルム(43)と普通紙(44)が共に矢印(5
0)方向に移動するようになっている。図において(1
61)、(462)は熱転写フィルム(43)の動きを
支持する補助ローラである。
A thermal transfer film (43) coated with heat-softening ink and plain paper (44) are placed on the heating resistor (1) and slide into pressure contact with the heating resistor (1). It is inserted between the platen roller (45), and when the platen roller (45) rotates in the direction of the arrow (45t), both the thermal transfer film (43) and the plain paper (44) move in the direction of the arrow (5).
0) direction. In the figure (1
61) and (462) are auxiliary rollers that support the movement of the thermal transfer film (43).

・またサーマル、プリンティングヘッドの接続は、発熱
抵抗体(1)からの第1の接続端子群(11)と集積回
路(2)の出力からの第2の接続端子群(21)とを接
続するワイヤ(47) 、発熱抵抗体(1)の一端(l
O)と共通電極(3)とを接続するワイヤ(48)、集
積回路(2)と入力信号群(4)とを接続するワイヤ(
49)により第1図のような回路に構成されることにな
る。
・In addition, the thermal and printing head connections are made by connecting the first connection terminal group (11) from the heating resistor (1) and the second connection terminal group (21) from the output of the integrated circuit (2). Wire (47), one end (l) of the heating resistor (1)
a wire (48) connecting the integrated circuit (2) and the input signal group (4);
49), the circuit is constructed as shown in FIG.

この構造で補助ローラ(461)(462)間の熱転写
フィルム(43)に“たるみ′″や1′シわ″が生じる
と発熱抵抗体(1)から熱転写フィルム(43)を介し
て普通紙(44)への記録する位置がずれたり、発熱抵
抗体(1)の熱が均一に伝導せず、記録像の解像度を悪
くするばかりでなく、繊細な記録ができないことになる
ので補助ローラ(461)(462)間の距離Qはでき
るだけ小さくすることが望ましい。
With this structure, if the thermal transfer film (43) between the auxiliary rollers (461 and 462) becomes ``sag'' or 1' wrinkled, it will be transferred from the heating resistor (1) to the plain paper via the thermal transfer film (43). If the recording position on the auxiliary roller (461) shifts or the heat from the heating resistor (1) is not uniformly conducted, not only will the resolution of the recorded image deteriorate, but also delicate recording will not be possible. ) (462) is desirably as small as possible.

そのため、図のように抵抗基板(40)とドライブ基板
(411)及び共通電極基板(412)との間に段差り
を設け、距離αを小さくする技術が特開昭54−139
558号公報に示されている。
Therefore, as shown in the figure, a technique is proposed in JP-A-54-139 to provide a step between the resistor board (40), the drive board (411), and the common electrode board (412) to reduce the distance α.
It is shown in the No. 558 publication.

この公報によれば段差りが0 、3mm程度では、通常
のワイヤボンディング方法で、この段差り間の、接続は
可能であっても、この程度の大きさでは補助ローラ(4
61)(462)間の距離Qを小さくする効果はほとん
ど望めない。即ち1通常、集積回路(2)の厚さは0.
3乃至0 、5mmあるからである。このことから、段
差りは0.5乃至1 、5mmが必要となる。
According to this publication, if the height difference is about 0.3 mm, it is possible to connect the height difference using the normal wire bonding method.
The effect of reducing the distance Q between 61) and 462 can hardly be expected. That is, 1. Usually, the thickness of the integrated circuit (2) is 0.
This is because it is 3 to 0.5 mm. From this, the height difference needs to be 0.5 to 1.5 mm.

次に第1図及び第2の要部を第3図により説明する。Next, the main parts of FIGS. 1 and 2 will be explained with reference to FIG. 3.

即ち抵抗基板(40)上の発熱抵抗体からのリード線の
端部に接続端子(111)、(112)が千鳥状に配設
された第1の接続端子群(11)と、ドライブ基板(4
1)上の集積回路(2)の抵抗基板(1)側に出力用の
接続端子(21r )’、 (212)が千鳥状に配設
された第2の接続端子群(21)とを段差りを介して相
対向させて配置し、第1の接続端子群(11)と第2の
接続端子群(21)それぞれの段差りに近いも′の同志
(111)と(21t)、遠いもの同志(112)と(
212)とを従来技術でそれぞれワイヤ(47t )、
(472)により接続する。
That is, a first connection terminal group (11) in which connection terminals (111) and (112) are arranged in a staggered manner at the end of the lead wire from the heating resistor on the resistance board (40), and a drive board ( 4
1) Connect the output connection terminals (21r)' and (212) on the resistor board (1) side of the upper integrated circuit (2) with a second connection terminal group (21) arranged in a staggered manner. The comrades (111) and (21t) are arranged opposite to each other through the gap, and the comrades (111) and (21t) that are close to the step of the first connection terminal group (11) and the second connection terminal group (21), and the one that is far away Comrade (112) and (
212) and wire (47t) and
(472) to connect.

この場合、抵抗基板(40)とドライブ基板(41)が
同一平面にあるか、また集積回路(2)の厚さ分だけ段
差を有し、高い側から低い裾にワイヤボンディングを行
ない、このとき第1の接続端子群(11)と第2の接続
端子群(21)の接続方法として、第1の接続端子群(
11)、第2の接続端子群(21)の近距離同志即ち(
11+)と(212)および遠距離同志即ち(112)
と(212)とを接続し、近距離同志のワイヤ(471
)の高さを遠距離同志のワイヤ(’+72)の高さより
低く配設するワイヤボンディング方法が特開昭57−1
65272号公報に示されている。
In this case, the resistor board (40) and the drive board (41) are on the same plane or have a step equal to the thickness of the integrated circuit (2), and wire bonding is performed from the higher side to the lower hem. As a method of connecting the first connection terminal group (11) and the second connection terminal group (21), the first connection terminal group (
11), close comrades of the second connection terminal group (21), that is, (
11+) and (212) and long-distance comrades, i.e. (112)
and (212), and close-range comrade wire (471).
JP-A-57-1 discloses a wire bonding method in which the height of the long-distance wire ('+72) is lower than that of the long-distance wire ('+72).
It is shown in Japanese Patent No. 65272.

しかし、このワイヤボンディング方法は直径30μmの
金ワイヤでフルオートボンダ((株)新月、型名SWB
 −FA −UTC−7)を用いた提案者らの実験によ
れば、段差の大きさが集積回路(2)の厚さ分、すなわ
ち0.3乃至0.5mmの範囲およびワイヤ長さが2m
m以下において有用でも段差が0 、5mm以上、ワイ
ヤ長さが2mm以上になると、第3図に示すように近距
離同志のワイヤ(47+)および遠距離同志のワイヤ(
472’ )の段差の高い部分において20μmから3
0μmと接近し極端な場合は第3図(a)のようにワイ
ヤ(471)、(472)が接触するものがみられた。
However, this wire bonding method uses a gold wire with a diameter of 30 μm using a fully automatic bonder (Shingetsu Co., Ltd., model name SWB).
-FA-UTC-7) According to the experiment conducted by the proponents, the size of the step was the thickness of the integrated circuit (2), that is, in the range of 0.3 to 0.5 mm, and the wire length was 2 m.
Even if it is useful at a wire length of 0.5 mm or less, if the step is 0.5 mm or more and the wire length is 2 mm or more, the short-distance wire (47+) and the long-distance wire (47+), as shown in FIG.
472') from 20μm to 3
In extreme cases where the distance approached 0 μm, wires (471) and (472) came into contact as shown in FIG. 3(a).

また第3図(a)のように近距離同志のワイヤ(47□
)のうちには下側まで曲りを示すものが見られた。
Also, as shown in Fig. 3(a), wires (47□
) were found to have curves down to the bottom.

とくに接触するものはワイヤ(471)同志やワイヤ(
472)同志にはなく、ワイヤ(47t)とワイヤ(4
72)間において発生する。これはフルオートボンダの
場合、ボンディング中のワイヤ切れ対策として金ワイヤ
の伸び率(常温で7乃至10%)の大きいものを用いる
ことから、ワイヤが高速で張られたのち縮むため、ワイ
ヤループとしての安定を保つための自由度は張ったワイ
ヤに対して直角方向のみとなり、ワイヤ倒れとなってあ
られれると考えられる。また実験中におけるワイヤ倒れ
は1個の集積回路内においては一方向性をもっているし
、またワイヤ(47□)、(47□)間の接触位置はワ
イヤのほぼ中央であった。更に第3図(b)に示すよう
に近距離同志のワイヤ(47+)をボンディングしたの
ち、遠距離同志のワイヤ(472)をボンディングしよ
うとすると、キャピラリ(51)の降下時にこのキャピ
ラリ(51)の先端や側端部がワイヤ(47、)に接触
し、キャピラリ(51)によるワイヤ踏み現象がみられ
、ワイヤ(47+)が(47,’)のように変形するこ
ともある。これは、段差が0.5mm以上の所をボンデ
ィングするとき、ワイヤループ形状を決めるワイヤテン
ション(通常ワイヤを挟み込む摩擦方式をとっている)
をゆるめて行なうためワイヤ(’+71)は最初の接続
点である接続端子(21,1)にボンディング後、次の
接続点である接続端子(47□)にボンディング中に長
めになるため矢印方向に変形し、最初の接続点である接
続端子(211)の外方に変形するため、ワイヤ(47
1)を最初の接続点である接続端子(212)にボンデ
ィングするときのキャピラリ(51)の降下時にワイヤ
<41’1 )を踏む現象が表われる。この現象は、近
距離同志の接続端子01.1 )、(21□)のボンデ
ィング位置間の距離ISLと、遠距離同志の接続端子(
H2)、(212)のボンディング位置間の距離DSL
との比が不適当、とくにhlISL比が大きいとこの傾
向が顕著にあられれることが実験的に確認された。
In particular, things that come into contact with each other are wires (471) and wires (471).
472) There is no comrade, but wire (47t) and wire (4
72) Occurs between. This is because fully automatic bonders use gold wire with a high elongation rate (7 to 10% at room temperature) to prevent wire breakage during bonding, so the wire is stretched at high speed and then shrinks, resulting in a wire loop. The only degree of freedom to maintain stability is in the direction perpendicular to the stretched wire, and it is thought that the wire may fall. Further, during the experiment, the wire collapse was unidirectional within one integrated circuit, and the contact position between the wires (47□) and (47□) was approximately at the center of the wires. Furthermore, as shown in FIG. 3(b), after bonding the wires (47+) that are close together, when attempting to bond the wires (472) that are long distance together, when the capillary (51) descends, this capillary (51) The tip and side ends of the wire (47,) come into contact with the wire (47,), and a phenomenon of wire stepping by the capillary (51) is observed, and the wire (47+) may be deformed as shown in (47,'). This is the wire tension that determines the wire loop shape when bonding where the step is 0.5 mm or more (usually a friction method is used to sandwich the wire).
To do this, loosen the wire ('+71). After bonding to the first connection point, the connection terminal (21, 1), wire ('+71) will become longer during bonding to the next connection point, the connection terminal (47□), so move it in the direction of the arrow. The wire (47) deforms outward from the connection terminal (211), which is the first connection point.
1) to the connection terminal (212), which is the first connection point, a phenomenon occurs in which the wire <41'1) is stepped on when the capillary (51) descends. This phenomenon is caused by the distance ISL between the bonding positions of the short-distance comrades' connection terminals 01.1) and (21□) and the long-distance comrades' connection terminal (
Distance DSL between bonding positions of H2) and (212)
It has been experimentally confirmed that this tendency is noticeable when the ratio of hlISL is inappropriate, especially when the hlISL ratio is large.

〔発明の目的〕[Purpose of the invention]

この発明は上述した問題点に鑑みなされたものであり、
ワイヤ間の接触事故を少なくし、高密度化をはかり得る
段差を有する電極群間のワイヤボンディング方法を提供
することを目的としている。
This invention was made in view of the above-mentioned problems,
It is an object of the present invention to provide a wire bonding method between electrode groups having steps that can reduce contact accidents between wires and increase density.

〔発明の概要〕[Summary of the invention]

即ち、本発明は、段差をもって対向するように設けられ
た第1の接続端子群及び第2の接続端子群のそわぞれ相
対応する接続端子対間をワイヤのホンディングにより接
続するようになされたワイヤボンディング方法において
、第1の接続端子群と第2の接続端子群との段差りと、
相対応する接続端子対のボンディング位置間の距離SL
との間にh/5L=0.4乃至0.6の関係をもたせた
ことを特徴とするワイヤボンディング方法であり、第1
の接続端子群及び第2の接続端子群かそれぞれ千鳥状に
配設され、近距離同志および遠距離同志の接続端子対を
それぞれ相対応させ、近距離同志の接続端子対のボンデ
ィング位置間の距離をISL、遠距離同志の接続端子対
のボンディング位置間の距離をO5Lとした時、h/I
SL = 0.40乃至0.45、hloSL =0.
50乃至0.60の関係を持たせたこと、段差りが0.
5乃至1.5mmの範囲であること、ワイヤのボンディ
ングが段差の低い側を先に、段差の高い側を後にするこ
とを実施態様としている。
That is, in the present invention, the pairs of corresponding connection terminals of the first connection terminal group and the second connection terminal group, which are provided to face each other with a step difference, are connected by wire honding. In the wire bonding method, a step between the first connection terminal group and the second connection terminal group;
Distance SL between bonding positions of corresponding connection terminal pairs
A wire bonding method characterized by having a relationship of h/5L=0.4 to 0.6 between
The connection terminal group and the second connection terminal group are respectively arranged in a staggered manner, and the short-distance and long-distance connection terminal pairs are made to correspond to each other, respectively, and the distance between the bonding positions of the short-distance connection terminal pairs is When ISL is ISL, and the distance between the bonding positions of the long-distance pair of connection terminals is O5L, h/I
SL = 0.40 to 0.45, hloSL = 0.
The relationship is between 50 and 0.60, and the difference in level is 0.
It is an embodiment that the wire bonding is in the range of 5 to 1.5 mm, and that the wire bonding is performed first on the side with the lower level difference and then on the side with the higher level difference.

〔発明の実施例〕[Embodiments of the invention]

サーマルプリンティングヘッドでは、発熱抵抗体の数が
前述のように数1000個程度と極めて多数であるため
駆動回路の集積化して、外部周辺回路の低減を図ってい
る。この場合に問題となるのは数1000個という多数
の発熱抵抗体と集積回路の出力及び発熱抵抗体と共通電
極をいかに作業能率よく高信頼性をもたせて接続し、か
つボンディング中のワイヤ倒れをいかに容易に修繕でき
るかという点である。
In a thermal printing head, the number of heat-generating resistors is extremely large, approximately several thousand as described above, so the drive circuit is integrated to reduce the number of external peripheral circuits. In this case, the problem is how to efficiently and reliably connect the many thousands of heat-generating resistors to the output of the integrated circuit, the heat-generating resistors, and the common electrode, and how to prevent wires from falling during bonding. The point is how easily it can be repaired.

この点について発明者らは更に段差を介して対向するよ
うに設けられた第1の接続端子群及び第2の接続端子群
のそ、れぞれ相対応する接続端子対間をワイヤのボンデ
ィングにより接続するワイヤボンディング方法について
種々実験検討した結果。
Regarding this point, the inventors further proposed that the first connection terminal group and the second connection terminal group, which are provided to face each other with a step in between, connect the corresponding connection terminal pairs by wire bonding. The results of various experiments and studies regarding wire bonding methods for connection.

段差が大きぐなるとワイヤが長くなるのでワイヤ切れ対
策からワイヤのテンションもワイヤの短かい場合に比較
して小さくしなければならずワイヤのたるみを防止する
必要から段差とボンディング位置間の比を最適化するこ
とにより、ワイヤのたるみもなくなることを見い出した
As the step becomes larger, the wire becomes longer, so in order to prevent wire breakage, the wire tension must be lower than when the wire is short.To prevent the wire from sagging, the ratio between the step and the bonding position is optimized. It has been found that the slack in the wire can be eliminated by

この場合、段差の大きさが0.5mm以下であると従来
技術によるワイヤボンディング方法が可能であるが段差
が0.5mm以上になると前述した問題点があり、段差
が1.’5mm以上になるとワイヤが長くなり、ボンデ
ィング中に最初にボンディングしたワイヤと接続電極の
ボンディング位置に引張り力が働き、はくりをまねく危
険性が高まると同時にワイヤに内在している曲がり(通
常カール現象と云う)が発生し、隣接ワイヤとの接触が
多くなり、例えば1mmに9個の接続端子を有するよう
な高密度配線には適さない。従って、本発明のワイヤボ
ンディング方法における段差の範囲は0.5mmから1
 、5mmが最適となる。またワイヤのボンディングを
段差の高い側を先にすると1段差の低い側をボンディン
グする際、特に金やアルミニウムのワイヤを使用すると
ボンディング部のすぐ上のワイヤのネック部に引張り力
が働き、極端な場合はボンディング位置の剥離を引き起
こす危険があるし、またボンディングの適用製品の補助
ローラ間を小さくするという制約条件から段差の低い側
を先にボンディングした方が好ましい。
In this case, if the size of the step is 0.5 mm or less, the conventional wire bonding method is possible, but if the step is 0.5 mm or more, the above-mentioned problem occurs, and if the step is 1.5 mm or less, the above-mentioned problem occurs. If the length exceeds 5 mm, the wire becomes long, and during bonding, a tensile force acts on the bonding position of the first wire and the connecting electrode, increasing the risk of peeling. This phenomenon (referred to as a phenomenon known as a phenomenon) occurs, and contact with adjacent wires increases, making it unsuitable for high-density wiring, such as one having nine connection terminals per 1 mm. Therefore, the range of the level difference in the wire bonding method of the present invention is from 0.5 mm to 1 mm.
, 5mm is optimal. Also, if you bond the wire to the side with a higher level difference first, when bonding the side with a lower level difference, especially if gold or aluminum wire is used, tensile force will be applied to the neck of the wire just above the bonding part, resulting in extreme In this case, there is a risk of peeling off at the bonding position, and also because of the constraint of reducing the distance between the auxiliary rollers of the product to which bonding is applied, it is preferable to bond the side with the lower level difference first.

次に本発明のワイヤボンディング方法の一実施例を第4
図により説明する。但し、第3図と同一符号は同一部を
示す。
Next, a fourth embodiment of the wire bonding method of the present invention will be described.
This will be explained using figures. However, the same reference numerals as in FIG. 3 indicate the same parts.

即ち、図示しない複数個の発熱抵抗体に接続された導出
線がその先端において、千鳥状の接続端子(]−11)
、(112)からなる第1の接続端子群(11)として
配設されている抵抗基板(40)はヒートシンク(42
)上の図示し、ない位置合せマtりと抵抗基板(40)
上の発熱抵抗体との位置合わせを行ない接着により載置
される。
That is, the leading wires connected to a plurality of heating resistors (not shown) have staggered connecting terminals (]-11) at their tips.
, (112), which is arranged as a first connection terminal group (11), is connected to a heat sink (42).
) As shown above, alignment mat and resistor board (40)
It is aligned with the heating resistor above and placed by adhesive.

また集積回路(2)が接着載置されたドライブ基板′(
41□)は抵抗基板(40)の接続端子(11□)、(
112)と、ドライブ基板(41)上の集積回路(2)
の千鳥状の接続端子(21+ )、(212)からなる
第2の接続端子群(21)と適正な距離を保ち、顕微鏡
等により近距離同志、遠距離同志の接続端子(111)
と(21+)及び(112)と(212)の位置出しが
行なわれ、ヒートシンク(42)上に接着載置される。
In addition, the drive board' (
41□) is the connection terminal (11□) of the resistance board (40), (
112) and the integrated circuit (2) on the drive board (41)
Keep an appropriate distance from the second connection terminal group (21) consisting of the staggered connection terminals (21+) and (212), and use a microscope etc. to inspect the connection terminals (111) for close and long distances.
, (21+), (112), and (212) are positioned and adhesively placed on the heat sink (42).

この場合抵抗基板(40)の高さと集積回路(2)面上
の高さの差即ち段差りは第2図に示したプラテンローラ
径40mm、補助ローラ径10mmで考えると1mm前
後が望しいので、本実施例では1mmとした。
In this case, the difference between the height of the resistor board (40) and the height above the surface of the integrated circuit (2), that is, the level difference, is preferably around 1 mm, considering the platen roller diameter of 40 mm and the auxiliary roller diameter of 10 mm as shown in Fig. 2. , is 1 mm in this example.

この時、抵抗基板(40)側の千鳥状の第1の接続端子
群(11)と、集積回路(2)側の千鳥状の第2の接続
端子群(21)とは遠距離同志即ち(11+)と(21
+)および近距離同志即ち(112)と(212)のも
のが相対向して配設され、これらをワイヤでボンディン
グすることによりサーマルプリンティングヘットが完成
する。
At this time, the staggered first connection terminal group (11) on the resistance board (40) side and the staggered second connection terminal group (21) on the integrated circuit (2) side are long-distance comrades, that is, ( 11+) and (21
+) and close-range comrades (112) and (212) are placed facing each other, and a thermal printing head is completed by bonding them with wire.

ここでボンディング位置間の段差りとボンディング位置
間距離の近距離同志の距離O5L及び遠距離同志の距離
ISLの比即ちボンディング段差比は、ボンディング段
差比= h/ISL = hloSl、で表わされる。
Here, the ratio of the step difference between the bonding positions to the short distance O5L distance between the bonding positions and the long distance distance ISL, that is, the bonding step ratio is expressed as bonding step ratio=h/ISL=hloSl.

また、ISLとO5Lを含めてSLとすればh/SLと
なる。
Furthermore, if SL includes ISL and O5L, it becomes h/SL.

次に従来の方法によるボンディング段差比のものを含め
て0.25から0.80まで変化させたボンディング結
果を下表に示す。但し、ボンディングは低い側を先に行
なった。
Next, the following table shows the bonding results with the bonding step ratio varied from 0.25 to 0.80, including those obtained by the conventional method. However, bonding was performed on the lower side first.

(以下余白) 表から遠距離同志のボンディング段差比を一定とした場
合、近距離同志のボンディング段差比が大きくなるにつ
れてワイヤ曲かり→ワイヤ接触→ワイヤ踏み現象と変化
していくことがわかる。
(Left below) From the table, it can be seen that when the bonding step ratio between long-distance comrades is constant, as the bonding step ratio between short-distance comrades increases, the phenomenon changes from wire bending to wire contact to wire stepping.

また、ワイヤを先にボンディングした集積回路(2)の
接続端子(21)からのワイヤの剥離はボンディング段
差比が0.40以下になると発生する確率が高まるが、
これは段差りが大きくなるとワイヤテンションは小さく
てもキャピラリ内における摩擦が働いているためと、ボ
ンディング位置間の距離が大きいこともからみ、ワイヤ
が長くなることに起因している。
Furthermore, the probability that the wire will peel off from the connection terminal (21) of the integrated circuit (2) to which the wire was bonded first increases when the bonding step ratio becomes 0.40 or less.
This is because when the step becomes larger, the wire becomes longer due to friction in the capillary acting even though the wire tension is small, and also because the distance between the bonding positions is large.

また同表の判定においてワイヤ接触が発生しても良とな
っているのはサーマルプリンティングヘッドの場合、段
差間におけるワイヤ数が数1000本あり、数個所のワ
イヤ接触で不良にすると歩留り低下となるのでワイヤ接
触が極めて少く、接触部を細い針金などで修繕可能なも
のは良と判断しているためである。
In addition, in the case of thermal printing heads, the number of wires between the steps is several thousand, and it is considered OK even if wire contact occurs in the judgment in the same table, and if wire contact occurs in a few places, the yield will decrease. Therefore, we judge that a product with very little wire contact and where the contact area can be repaired with a thin wire is good.

また同表でワイヤ踏み現象はワイヤ、を取りまずして修
繕となるのでボンディングとしては不良である。このと
きのボンディング段差比は0.6以上であることがわか
る。
Also, in the same table, the wire stepping phenomenon is a defect in bonding because it requires repair without removing the wire. It can be seen that the bonding step ratio at this time is 0.6 or more.

従って同表より修繕可能なボンディング段差比は0.4
0乃至0.60であり、千鳥状配置で近距離同志。
Therefore, from the same table, the bonding step ratio that can be repaired is 0.4.
0 to 0.60, close range comrades in a staggered arrangement.

遠距離同志の接続端子を相対向させた場合の内側のボン
ディング段差比は0.40乃至0.45、外側のボンデ
ィング段差比は0.50乃至0.60である。
When long-distance connection terminals are placed opposite each other, the inner bonding step ratio is 0.40 to 0.45, and the outer bonding step ratio is 0.50 to 0.60.

第4図(b)には実施例におけるワイヤボンディングの
ワイヤリング状態を示す。表で判定が良のものはボンデ
ィングの後のボンディング位置側において高さ方向には
近距離同志のワイヤ(47+)、遠距離同志のワイヤ(
472)間に差はなく、はぼ同一レベルでボンディング
された。これは図中矢印方向にキャピラリ内でワイヤに
摩擦力がかかりながら、即ち、ワイヤを初めのボンディ
ング位置にボンディング後、ワイヤを引張りながら次の
ホンディング位置にボンディングされるためである。
FIG. 4(b) shows the wiring state of wire bonding in the embodiment. If the judgment is good in the table, on the bonding position side after bonding, the height direction is a wire of a short distance (47+), a wire of a long distance (47+), and a wire of a long distance (47+).
472) There was no difference between them, and they were bonded at almost the same level. This is because frictional force is applied to the wire within the capillary in the direction of the arrow in the figure, that is, after the wire is bonded to the first bonding position, it is bonded to the next bonding position while pulling the wire.

〔発明の効果〕〔Effect of the invention〕

本発明のワイヤボンディング方法を用いることにより接
続したワイヤ間の接触が極めて少なくなるばかりでなく
、接触が生じても容易に修繕可能となる。さらに製品あ
歩留りも向上するとともに修繕個所も少なくなることに
よりワイヤボンディングの作業能率が向上する。またワ
イヤの曲がりも少ないことからワイヤ保護を行うエンキ
ャップ剤のワイヤ間の通りが良くなることによりエンキ
ャップ工程でのワイヤの接触を未然に防止できる。
By using the wire bonding method of the present invention, not only is contact between connected wires extremely reduced, but even if contact occurs, it can be easily repaired. Furthermore, the product yield is improved and the number of repair parts is reduced, which improves wire bonding work efficiency. In addition, since the wires are less bent, the encapsulant that protects the wires can pass more easily between the wires, thereby preventing the wires from coming into contact during the encapping process.

更に、このような段差を設けることにより補助ローラ間
の距離が小さくでき熱転写フィルムのたるみ、しわの発
生も防止でき、普通紙への繊細な転写が可能となる。
Furthermore, by providing such a step difference, the distance between the auxiliary rollers can be reduced, preventing the thermal transfer film from sagging or wrinkling, allowing delicate transfer to plain paper.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はサーマルプリンティングヘッドの説明図、第2
図はサーマルプリンティングヘッドを用い熱転写フィル
ムを介して普通紙へ記録する状態を゛示す説明用断面図
、第3図は従来のワイヤボンディング方法による段差ボ
ンディングを示す図であり、第3図(a)は説明用平面
図、第3図(b)は説明用断面図、第4図は本発明のワ
イヤボンディング方法の一実施例、による段差ボンディ
ングを示す図であり、第4図(a)は説明用平面図、第
4図(b)は説明用断面図である。 1・・・発熱抵抗体 −・・・集積回路3・・・共通電
極 4・・・入力信号群11、21・・・接続端子群 111、112.21. 、212・・・接続端子40
・・・抵抗基板 41・・・ドライブ基板412・・・
共通電極基板 42・・・ヒートシンク43・・・熱転
写フィルム 44・・・普通紙45・・・プラテンロー
ラ 46. 、462・・・補助ローラ47、471.
472 、47□’、48.49・・・ワイヤ51・・
・キャピラリ 代理人 弁理士 井 上 −男 第1図 第 3 図
Figure 1 is an explanatory diagram of the thermal printing head, Figure 2
The figure is an explanatory cross-sectional view showing the state of recording on plain paper via a thermal transfer film using a thermal printing head, and Figure 3 is a diagram showing step bonding by a conventional wire bonding method. is a plan view for explanation, FIG. 3(b) is a cross-sectional view for explanation, FIG. 4 is a diagram showing step bonding according to an embodiment of the wire bonding method of the present invention, and FIG. 4(a) is a diagram for explanation. FIG. 4(b) is a sectional view for explanation. 1...Heating resistor -...Integrated circuit 3...Common electrode 4...Input signal group 11, 21...Connecting terminal group 111, 112.21. , 212... connection terminal 40
...Resistance board 41...Drive board 412...
Common electrode substrate 42... Heat sink 43... Thermal transfer film 44... Plain paper 45... Platen roller 46. , 462... Auxiliary rollers 47, 471.
472, 47□', 48.49...Wire 51...
・Capillary agent Patent attorney Mr. Inoue Figure 1 Figure 3

Claims (4)

【特許請求の範囲】[Claims] (1)段差をもって対向するように設けられた第1の接
続端子群及び第2の接続端子群のそれぞれ相対応する接
続端子対間をワイヤのボンディングにより接続するよう
になされたワイヤボンディング方法において、前記第1
の接続端子群と前記第2の接続端子群との段差りと前記
相対応する接続端子対のボンディング位置間の距離SL
との間にh/5L=0.4乃至0.6の関係を持たせた
ことを特徴とするワイヤボンディング方法。
(1) A wire bonding method in which pairs of corresponding connection terminals of a first connection terminal group and a second connection terminal group, which are provided to face each other with a difference in level, are connected by wire bonding, Said first
distance SL between the level difference between the connecting terminal group and the second connecting terminal group and the bonding position of the corresponding pair of connecting terminals;
A wire bonding method characterized by having a relationship of h/5L=0.4 to 0.6.
(2)第1の接続端子群及び第2の接続端子群がそれぞ
れ千鳥状に配設され、近距離同志および遠距離同志の接
続端子対をそれぞれ相対応させ、前記近距離同志の接続
端子対のボンディング位置間の距離をISL、前記遠距
離同志の接続端子対のボンディング位置間の距離をQS
Lとした時、h/ISL =0.40乃至0.45.h
10SL=0.50乃至0,60の関係を持たせたこと
を特徴とする特許請求の範囲第1項記載のワイヤボンデ
ィング方法。
(2) The first connection terminal group and the second connection terminal group are respectively arranged in a staggered manner, and the short-distance comrade connection terminal pairs and the long-distance comrade connection terminal pairs are respectively made to correspond to each other, and the short-distance comrade connection terminal pairs are The distance between the bonding positions is ISL, and the distance between the bonding positions of the pair of long-distance connection terminals is QS.
When L, h/ISL =0.40 to 0.45. h
10. The wire bonding method according to claim 1, wherein the wire bonding method has a relationship of 10SL=0.50 to 0.60.
(3)段差りが0.5乃至1 、5mmの範囲であるこ
とを特徴とする特許請求の範囲第1項または第2項記載
のワイヤボンディング方法。
(3) The wire bonding method according to claim 1 or 2, wherein the step is in the range of 0.5 to 1.5 mm.
(4)ワイヤのボンディングが段差の低い側を先に、段
差の高い側を後にすることを特徴とする特許請求の範囲
第1項乃至第3項のいずれかに記載のワイヤボンディン
グ方法。
(4) The wire bonding method according to any one of claims 1 to 3, wherein the wire is bonded to the side with the lower level difference first and the side with the higher level difference last.
JP59031413A 1984-02-23 1984-02-23 Wire bonding method Granted JPS60176245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59031413A JPS60176245A (en) 1984-02-23 1984-02-23 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59031413A JPS60176245A (en) 1984-02-23 1984-02-23 Wire bonding method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1187996A Division JP2645235B2 (en) 1996-01-26 1996-01-26 Wire bonding method

Publications (2)

Publication Number Publication Date
JPS60176245A true JPS60176245A (en) 1985-09-10
JPH0527252B2 JPH0527252B2 (en) 1993-04-20

Family

ID=12330567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59031413A Granted JPS60176245A (en) 1984-02-23 1984-02-23 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS60176245A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6238154U (en) * 1985-08-23 1987-03-06
US5168368A (en) * 1991-05-09 1992-12-01 International Business Machines Corporation Lead frame-chip package with improved configuration
US5296744A (en) * 1991-07-12 1994-03-22 Vlsi Technology, Inc. Lead frame assembly and method for wiring same
JP2019111752A (en) * 2017-12-25 2019-07-11 東芝ホクト電子株式会社 Thermal print head and thermal printer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128628A (en) * 1983-12-15 1985-07-09 Fuji Electric Co Ltd Semiconductor element
JPS61128628A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Dynamic logical circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128628A (en) * 1983-12-15 1985-07-09 Fuji Electric Co Ltd Semiconductor element
JPS61128628A (en) * 1984-11-27 1986-06-16 Mitsubishi Electric Corp Dynamic logical circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6238154U (en) * 1985-08-23 1987-03-06
US5168368A (en) * 1991-05-09 1992-12-01 International Business Machines Corporation Lead frame-chip package with improved configuration
US5296744A (en) * 1991-07-12 1994-03-22 Vlsi Technology, Inc. Lead frame assembly and method for wiring same
US5359227A (en) * 1991-07-12 1994-10-25 Vlsi Technology, Inc. Lead frame assembly and method for wiring same
JP2019111752A (en) * 2017-12-25 2019-07-11 東芝ホクト電子株式会社 Thermal print head and thermal printer

Also Published As

Publication number Publication date
JPH0527252B2 (en) 1993-04-20

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