JPS6074540A - Wire-bonding - Google Patents
Wire-bondingInfo
- Publication number
- JPS6074540A JPS6074540A JP58180484A JP18048483A JPS6074540A JP S6074540 A JPS6074540 A JP S6074540A JP 58180484 A JP58180484 A JP 58180484A JP 18048483 A JP18048483 A JP 18048483A JP S6074540 A JPS6074540 A JP S6074540A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- distance
- wires
- short
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
- H01L2224/06153—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry with a staggered arrangement, e.g. depopulated array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8593—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape
- H01L2224/85947—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape by mechanical means, e.g. "pull-and-cut", pressing, stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はワイヤボンディング方法に係り、特に段差を介
し高密度に配置された接続端子間をワイヤリングするワ
イヤボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding method, and more particularly to a wire bonding method for wiring between connection terminals arranged at high density through steps.
一般にファクシリミ等に用いられるサーマルヘッドは、
高密度に配置された接続端子間をワイヤボンディングし
ている。このようなサーマルヘッドを第１図を参照して
説明する。Thermal heads generally used for facsimile machines, etc.
Wire bonding is performed between the connecting terminals arranged in high density. Such a thermal head will be explained with reference to FIG.
第１図Ｃ二おいて、（１）はセラミック等の絶縁基板上
に薄膜、厚膜等の技術；二よって一列に高密度に並べた
複数の発熱抵抗体で、（２）はシフトレジスタ。In FIG. 1C2, (1) is a technology of thin film, thick film, etc. on an insulating substrate such as ceramic; (2) is a plurality of heat generating resistors arranged in a line at high density; (2) is a shift register.
トランジスタドライブ及びセレクタからなる発熱抵抗体
駆動用集積回路、（３）は各発熱抵抗体（１）の一端０
〔を共通接続した共通電極、（４）は各発熱抵抗体（１
）を集積回路（２）を通じて選択的に通電発熱するため
の入力信号群である。また前記各発熱抵抗体（１）のも
う一端０υは選択的に出力される集積回路（２）の出力
端子Ｑυに対応するように接続される。この出力端子０
υの数は、一般に３２の出力数のものが経済的に優れて
いるといわれている。従って、前記発熱抵抗体（１）は
３２個単位にて集積回路（２）の出力端子０Ｉ）と接続
されることになる。また、（５）は集積−回路（２）の
出力信号用端子、（６）は集積回路（２）への電源であ
る。An integrated circuit for driving a heating resistor consisting of a transistor drive and a selector, (3) is one end of each heating resistor (1).
The common electrode (4) is connected to each heating resistor (1).
) is a group of input signals for selectively energizing and generating heat through the integrated circuit (2). Further, the other end 0υ of each heating resistor (1) is connected to correspond to the output terminal Qυ of the integrated circuit (2) from which output is selectively output. This output terminal 0
Regarding the number of υ, it is generally said that an output number of 32 is economically superior. Therefore, the heating resistors (1) are connected to the output terminal 0I of the integrated circuit (2) in units of 32. Further, (5) is an output signal terminal of the integrated circuit (2), and (6) is a power supply to the integrated circuit (2).
このようにして、ファクシミリの記録は所望の発熱抵抗
体（１）を選択的に通電して発熱させ発熱抵抗体（１）
（二熱転写フィルムを接触させ普通紙に行なわれる。In this way, facsimile recording is performed by selectively energizing the desired heating resistor (1) to generate heat.
(This is done on plain paper by bringing a two-thermal transfer film into contact with it.
第１図に示したサーマルヘッドでは、発熱抵抗体の数が
数十個と極めて多数となるので、駆動回路の集積化を図
り外部周辺回路の低減を図るのが技術の潮流である。と
ころが、数十個の発熱抵抗体と集積回路の出力及び発熱
抵抗体と共通電極とを、作業能率と信頼性を良く接続す
るにはヘッドが大型化する危険があった。In the thermal head shown in FIG. 1, the number of heat-generating resistors is extremely large, several dozen, and therefore, the trend in technology is to integrate the drive circuit and reduce the number of external peripheral circuits. However, in order to connect dozens of heat generating resistors to the output of the integrated circuit and the heat generating resistors to the common electrode with good work efficiency and reliability, there was a risk that the head would become large.
これを解決する技術として、特開昭５７−１６５２７２
号公報に、千鳥状に配置した接続端子の近距離同志、遠
距離同志をそれぞれ接続し、かつ近距離同志の接続ワイ
ヤの高さを遠距離同志の接続ワイヤの高さより低くする
ことにより、ワイヤ間の接触事故を防止し、以って高密
度化を図るワイヤボンディング装置が開示されている。As a technology to solve this problem, Japanese Patent Application Laid-Open No. 57-165272
According to the publication, by connecting the short-distance terminals and the long-distance terminals of the connecting terminals arranged in a staggered manner, and by making the height of the connecting wire of the short-distance terminals lower than the height of the connecting wire of the long-distance terminals, A wire bonding device is disclosed that prevents contact accidents between wires and thereby increases density.
この公報に開示されている技術内容について第２図を参
照して説明する。The technical content disclosed in this publication will be explained with reference to FIG. 2.
第２図において、抵抗基板（４０上に発熱抵抗体（１）
の一端０υのリード（１０１）を千鳥状に配設したもの
と、ドライブ基板（４１）の抵抗基板（４［）側に出力
端子Ｃυが千鳥状に設けた集積回路（２）を段差を介し
て相対向させて配置し、千鳥状端子Ｃυおよびリード（
１０１）を、段差間ワイヤボンディングしたようすを示
す。抵抗基板（４１とドライブ基板（４１）が同一平面
にあり、また集積回路（２）の厚さ分だけ段差を有し、
段差の高い側から低い側１ニワイヤボンデイングし、こ
のとき千鳥状端子０１）およびリード（１０１）の接続
方法として端子（２１）、リード（１０１）の内側同志
および外側同志を接続して内側同志のワイヤ高さを外側
同志のワイヤ高さより低く配設する方法が特開昭５７−
１６５２７２号公報に開示されている。In Figure 2, there is a heating resistor (1) on the resistor board (40).
An integrated circuit (2) in which leads (101) of 0υ at one end are arranged in a staggered manner and an integrated circuit (2) in which output terminals Cυ are arranged in a staggered manner on the resistance board (4[) side of the drive board (41)] are connected via a step. The staggered terminals Cυ and leads (
101) is wire bonded between steps. The resistor board (41) and the drive board (41) are on the same plane, and have a step equal to the thickness of the integrated circuit (2),
One wire bonding is performed from the higher side to the lower side of the step, and at this time, the staggered terminal 01) and the lead (101) are connected by connecting the inner and outer terminals of the terminal (21) and the lead (101). A method of arranging the height of the wires lower than the height of the wires on the outer side is disclosed in Japanese Patent Application Laid-open No. 57-
It is disclosed in Japanese Patent No. 165272.
ところが、この方法を（株）新月の型名８ＷＢ−ＦＡ−
ＵＴＣ−７を用いて本発明者らが詳細に検討した結果、
次の事実が判明した。However, this method was not applied to Shingetsu Co., Ltd.'s model number 8WB-FA-.
As a result of detailed study by the present inventors using UTC-7,
The following facts were discovered.
すなわち、段差の大きさが集積回路（２）の厚さ分（通
常０．３乃至０．５１ｍの範囲およびワイヤ長が２１ｍ
以下）では、特に問題はない。しかしながら、段差が９
．５１１以上およびワイヤ長が２１１以上となると、第
２図に示すように内側同志のワイヤ（１０２）および外
側同志のワイヤ（１０Ｂ）では、２０μｍ乃至３０μｍ
とワイヤ（１０２） 、 （１０３）が接近し、極端な
場合は第２図（ａ）のようにワイヤ（１０２） 、 （
１０３）が接触し、接触事故が生じる。特に接触するワ
イヤは（１０２）間および（１０３）間同志にはなく、
ワイヤ（１０２）と（１０３）との間で生じる。そこで
、本発明者らが議論した結果、この原因はフルオートボ
ンダの場合ボンディング中のワイヤ切れ対策とじて金ワ
イヤの伸び率（常温にて７乃至１０％程度）の大きいも
のを用いることから、高温で張ったワイヤが縮むことを
勘案して、ワイヤループとして安定を保つための自由度
は張ったワイヤに対し直角方向しかなく、ワイヤ倒れが
生じるのだと推定する。さらに詳細な実験を続けると、
ワイヤ倒れは１集積回路内においては、一方向性を有し
ている。さらにワイヤ（１０２） （１０３）間の接触
位置はワイヤリングしたワイヤの略中央であった。これ
は、第２図（ａ）より明らかなようにワイヤ倒れが生じ
ると正規の位置より最も大きく変位するのはワイヤ中央
である。That is, the size of the step is equal to the thickness of the integrated circuit (2) (usually in the range of 0.3 to 0.51 m, and the wire length is 21 m).
(below), there is no particular problem. However, there are 9 steps.
．． 511 or more and the wire length is 211 or more, the inner wire (102) and the outer wire (10B) have a length of 20 μm to 30 μm
and wires (102) and (103) get close to each other, and in extreme cases, wires (102) and (
103) come into contact and a contact accident occurs. In particular, there are no wires in contact between (102) and (103),
occurs between wires (102) and (103). As a result of discussion by the present inventors, the cause of this problem is that fully automatic bonders use gold wire with a high elongation rate (approximately 7 to 10% at room temperature) to prevent wire breakage during bonding. Taking into account that wire stretched at high temperatures shrinks, it is assumed that the only degree of freedom for maintaining stability as a wire loop is in the direction perpendicular to the stretched wire, which causes the wire to collapse. Continuing with more detailed experiments,
Wire collapse has unidirectionality within one integrated circuit. Further, the contact position between the wires (102) and (103) was approximately at the center of the wires. This is because, as is clear from FIG. 2(a), when the wire falls, the center of the wire is displaced the most from its normal position.
本発明の目的は上述の問題を鑑み、ワイヤ間の接触事故
を防止した高密度ワイヤボンディング方法を提供するこ
とにある。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a high-density wire bonding method that prevents contact accidents between wires.
上述の目的を達成するために、本発明は近距離同志の接
続ワイヤを真空吸着して成形し且つ押圧することにより
、近距離同志のワイヤと遠距離同志のワイヤとが接触す
ることを防止することができる。In order to achieve the above object, the present invention prevents the short-distance wires from coming into contact with the long-distance wires by vacuum-chucking, forming and pressing the short-distance connection wires. be able to.
以下、本発明の一実施例を第３図（、）乃至（ｅ）を参
照して説明する。なお、この実施例中ではサーマルヘッ
ドを用いてワイヤボンディング方法を説明するが、他の
高密度ワイヤボンディングにも用いることが可能である
。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 3(,) to (e). In this embodiment, a wire bonding method will be explained using a thermal head, but it can also be used for other high-density wire bonding.
第３図（、）において、複数の発熱抵抗体（図示せず）
に接続された導出線（図示せず）がその先端において、
千鳥状にボンディングバット（第２図（、）においては
（１０１） ）が配設された抵抗基板（４１ｍは、集積
回路（２）が接着技術により載置されたドライブ基板（
４１）上に載置されている。この場合、抵抗基板（４１
の高さと集積回路（２）面上との高さの差即ち段差は略
１ｍ１Ｌである。また抵抗基板（４Ｇ側の千鳥状のパッ
ドと集積回路（２）側の千鳥状のポンディングパッド（
第２図（、）では端子０１）に相当）は遠距離同志およ
び近距離同志のものに相対向するように構成されている
。In Figure 3 (,), multiple heating resistors (not shown)
At its tip, a lead-out wire (not shown) connected to
A resistance board (41m is a drive board (41m) on which bonding bats ((101) in Fig. 2 ()) are arranged in a staggered manner is a drive board (41m) on which an integrated circuit (2) is mounted using adhesive technology.
41) It is placed on top. In this case, the resistance board (41
The difference between the height and the height on the surface of the integrated circuit (2), that is, the height difference, is approximately 1 m1L. Also, the resistor board (staggered pads on the 4G side and staggered bonding pads on the integrated circuit (2) side)
The terminals (corresponding to terminals 01) in FIG.
第３図（ａ）において、集積回路（２）の近距離同志の
接続端子と抵抗基板四側の近距離同志の接続端子とのそ
れぞれのパッドに集積回路（２）側をファストボンディ
ングとして直径が３０μｍ乃至１００μｍの接続ワイヤ
（１０２）をワイヤリングする。蛇足だが、抵抗基板側
（４１即ち段差の高い側をファストボンディング点とす
ると、ボンディング点の腰（ワイヤの倒れにくさを示す
）が強い。即ちワイヤ（１０２）のループが集積回路（
２）側をファストボンディングしたものよりも高くなり
、結果として段差を設けて、サーマルヘッドそのものを
小型化する効果が低下する。そこで集積回路（２）側を
ファストボンディング点としたのである。In Fig. 3(a), the integrated circuit (2) side is fast bonded to each pad of the short-distance connection terminal of the integrated circuit (2) and the short-distance connection terminal of the four sides of the resistor board, and the diameter is Wire a connecting wire (102) between 30 μm and 100 μm. Although it is a side note, if the resistance board side (41, i.e. the side with a high level difference) is used as the fast bonding point, the stiffness of the bonding point (indicating the resistance of the wire to falling) is strong.In other words, the loop of the wire (102) is connected to the integrated circuit (
2) It is higher than that in which the side is fast bonded, and as a result, a step is provided, reducing the effect of reducing the size of the thermal head itself. Therefore, the integrated circuit (2) side was used as the fast bonding point.
次に第３図（ｂ）において、中心に直径が３５μｍ乃至
１１０μｍの中空の孔を有する真空吸着治具のノズル（
１０５）先端をワイヤ（１０２）に対向して配置した矢
印（５１）方向に動かし、ワイヤ（１０２）との接触点
でワイヤ（１０２）を３００ ｍＨｇ乃至５００ ｍＨ
ｇの吸引力で真空吸着する。このようにした状態のワイ
ヤ（１０２）を第３図（Ｃ）に示す。このようにすると
、ワイヤ（１０２）が抵抗基板（４０の長手方向に曲が
っていたのが、所定の位置に復元する。第３図（ｃ）に
おいて、真空吸着を停止し、矢印（５２）方向に真空吸
着治具のノズル（１０５）を後退させる。このようにし
て、ワイヤ（１０２）の成形が完了したようすを第３図
（ｄ）に示す。以下第３図（ａ）から（ｄ）をくり返し
例えば集積回路（２）の出力数ごとにワイヤボンディン
グし全てのワイヤ（１０２）の成形を終了させる。この
後、第３図（、）のように接続端子が遠距離同志のワイ
ヤ（１０３）をワイヤリングし高密度に配された段差を
有する接続端子間のワイヤボンディングを終了させる。Next, in FIG. 3(b), the nozzle of the vacuum suction jig (
105) Move the tip in the direction of the arrow (51) placed opposite the wire (102) and at the point of contact with the wire (102) set the wire (102) at 300 mHg to 500 mH
Vacuum suction with a suction force of g. The wire (102) in this state is shown in FIG. 3(C). By doing this, the wire (102), which was bent in the longitudinal direction of the resistance board (40), is restored to the predetermined position. In FIG. 3(c), the vacuum suction is stopped and The nozzle (105) of the vacuum suction jig is moved back.The formation of the wire (102) is thus completed as shown in Figure 3(d).The following Figures 3(a) to (d) For example, wire bonding is performed for each number of outputs of the integrated circuit (2) to complete the forming of all wires (102).After this, as shown in FIG. ) to complete the wire bonding between the connection terminals that are densely arranged with steps.
このようにすることによりワイヤ（１０２）とワイヤ（
１０３）との接触事故が防止される。さらにワイヤ（１
０２）を真空吸着することによりワイヤ（１０２）が曲
っている時、所定の形状に復元できる効果もある。By doing this, the wire (102) and the wire (
103) is prevented. Furthermore, the wire (1
By vacuum suctioning the wire (102), when the wire (102) is bent, it can be restored to a predetermined shape.
それに加えて万が−ワイヤ（１０２）とワイヤ（１０３
）とが接触事故を起こした際その接触部の修理用として
ノズル（１０５）を用いて修理を行な−うことが、でき
る。また、糞空吸着治具のノズル（１０５）の先端が接
触するワイヤ（１０２）の部分は略中央が良い。In addition, just in case - wire (102) and wire (103)
) can cause a contact accident, the nozzle (105) can be used to repair the contact portion. Further, it is preferable that the portion of the wire (102) that the tip of the nozzle (105) of the feces/air suction jig comes into contact with is approximately in the center.
これはワイヤリングされたボンディング点近傍において
はワイヤ（１０２）の腰が強い上に、ボンディング点近
傍で真空吸着すると極端な場合はボンディング点の剥離
を招く恐れがあるからである。This is because the wire (102) is stiff near the wired bonding point, and vacuum suction near the bonding point may lead to separation of the bonding point in extreme cases.
さらにこのワイヤボンディングを施す段差の適正値はＱ
、 ５ ｍｍ乃至１．５ Ｉｌｌの範囲である。この理
由は以下の通りである。段差がＱ、 ５ ｍｍ未満であ
ると、本発明の実施例を施こすと、ワイヤ長が短かい為
ワイヤが曲りにくいと共にボンディング点近傍への付加
が大きくなり、極端な場合にはボンディング点に剥離が
生じる。一方、段差が１．５關より大であると近距離の
接続端子を結ぶワイヤの成形後に張られる遠距離の接続
端子を結ぶワイヤ倒れが激しくなり、ワイヤ間の接触事
故が生じ、例えば９ドツト／關の高密度配線に適さなく
なる。また、図示していないが、ノズル先端にテフロン
コーテング等を施こすとワイヤ表面に傷が付くことがな
くなる。さらに、感熱転写用のサーマルヘッドに限って
言えば、接続端子間に段差を設けることにより、熱転写
フィルムの動きを支持ガイドする補助ローラ間の距離が
小さく出来るので、全体としてサーマルヘッドを小型化
できる。このことによづ
り、〃−マルヘッドの発熱部近傍の熱伝導性を一定にす
ることが出来て、記録像の解像度が極めて良くなる効果
がある。Furthermore, the appropriate value of the step for performing this wire bonding is Q
, 5 mm to 1.5 Ill. The reason for this is as follows. If the step Q is less than 5 mm, if the embodiment of the present invention is applied, the wire will be difficult to bend due to the short wire length, and the addition to the vicinity of the bonding point will be large, and in extreme cases, the wire will be hard to bend. Peeling occurs. On the other hand, if the height difference is larger than 1.5 degrees, the wire that connects the long-distance connection terminals that is stretched after forming the wire that connects the short-distance connection terminals will fall down severely, causing contact accidents between the wires, and, for example, 9 dots. /It becomes unsuitable for high-density wiring. Furthermore, although not shown, if the tip of the nozzle is coated with Teflon or the like, the wire surface will not be scratched. Furthermore, in terms of thermal heads for thermal transfer, by providing a step between the connection terminals, the distance between the auxiliary rollers that support and guide the movement of the thermal transfer film can be reduced, making it possible to downsize the thermal head as a whole. . This makes it possible to maintain constant thermal conductivity in the vicinity of the heat-generating portion of the multi-head, which has the effect of extremely improving the resolution of the recorded image.
次に第４図を参照して本発明の他の実施例を説明する。Next, another embodiment of the present invention will be described with reference to FIG.
第４図において、吸着装置（６０）は、真空ポンプ（図
示せず）に通じる通路管（６１）に中央導管（６２）が
接続し、この中央導管（６２）に各ワイヤ（図示せず）
を吸引する支管（６３）が接続している。この支管（６
３）によって形成されるノズルには一部が切裂かれた楕
円状部（６４）が形成されている。この楕円状部（６４
）により、各ワイヤを吸着する。この様に複数個のノズ
ルが一体となった吸着装置（６０）は、近距離の接続端
子間を接続する接続ワイヤを一度に吸着することにより
所定の形状に成形すると共に、押圧し押し曲げることが
可能となる。また、吸引力は各ノズルとも初めは一定の
力で吸引するが、しかし、ワイヤに５よっては曲がって
おり、なかなか吸着できないものがある。ところがこの
吸着装置（６０）では、吸着しやすいワイヤから吸着し
、そのノズルの楕円状部（６４）はワイヤによってふさ
がれることになる。するとふさがれていないノズルの楕
円状部（６４）の吸着力が増加し、この増加した吸着力
によって、よけいに曲がったワイヤも所定の形状に成形
することが可能になる。なお、ノズルの形状は、三角形
状、四角形状、円形状等であっても良い。In FIG. 4, the adsorption device (60) has a central conduit (62) connected to a passage pipe (61) leading to a vacuum pump (not shown), and each wire (not shown) connected to the central conduit (62).
A branch pipe (63) for suctioning is connected. This branch pipe (6
The nozzle formed by 3) has an elliptical portion (64) with a portion cut away. This elliptical part (64
) to attract each wire. The suction device (60), in which multiple nozzles are integrated in this manner, forms a predetermined shape by suctioning the connecting wires that connect the connecting terminals at a short distance at once, and also presses and bends the connecting wires. becomes possible. In addition, each nozzle initially suctions with a constant force, but some wires 5 are bent and cannot be easily attracted. However, in this suction device (60), the wire that is easy to suction is first suctioned, and the elliptical portion (64) of the nozzle is blocked by the wire. Then, the suction force of the unobstructed elliptical portion (64) of the nozzle increases, and this increased suction force makes it possible to form even a rather bent wire into a predetermined shape. Note that the shape of the nozzle may be triangular, square, circular, or the like.
次に本発明者らは、本発明と同等の効果が得られる他の
実施態様項として［段差を有する千鳥状の接続端子が近
距離同志及び遠距離同志それぞれ対応して配設され、こ
の接続端子の近距離同志及び遠距離同志がそれぞれワイ
ヤボンディング接続され、近距離同志の接続ワイヤを機
械的に成形し遠距離同志の接続ワイヤとの間隔を広げる
ワイヤボンディング方法」を考えた。これを第５図（、
）乃至第５図（ｇ）を参照して説明する。Next, the present inventors have proposed another embodiment that can obtain the same effects as the present invention [in which staggered connection terminals with steps are arranged correspondingly to short-distance comrades and long-distance comrades, respectively; We devised a wire bonding method in which short-distance terminals and long-distance terminals are each connected by wire bonding, and the distance between the short-distance terminals and the long-distance terminals is increased by mechanically forming the connecting wires of the terminals. This is shown in Figure 5 (,
) to FIG. 5(g).
第５図（ａ）において、発熱抵抗体（図示せず）に接続
された導出線（図示せず）のその先端において千鳥状に
ポンディングパッドが配置された抵抗基板（４１は集積
回路（２）が接着技術により載置されたドライブ基板（
４１）上に載置されている。この抵抗基板（４１の高さ
と集積回路（２）面上の高さの差即ち段差は略１ ＋ｕ
である。この時の抵抗基板四側の千鳥状のパッド集積回
路（２）側の千鳥状のポンディングパッドは外側同志お
よび内側同志のものは相対向している。次にワイヤボン
ディング方法について述べる。集積回路（２）の内側の
第１のボンディング点と抵抗基板（４１側の内側の第１
のボンディング点のそれぞれのパッドに集積回路（２）
側をファストボンディングとしてワイヤ（１０２）がワ
イヤリングされる。In FIG. 5(a), a resistor board (41 is an integrated circuit (2 ) is mounted using adhesive technology on the drive board (
41) It is placed on top. The difference between the height of this resistor substrate (41) and the height on the surface of the integrated circuit (2), that is, the height difference, is approximately 1 +u
It is. At this time, the staggered pads on the four sides of the resistor board The staggered bonding pads on the integrated circuit (2) side are opposed to each other on the outside and on the inside. Next, the wire bonding method will be described. The first bonding point inside the integrated circuit (2) and the first bonding point inside the resistor board (41 side)
integrated circuit (2) on each pad of the bonding point of
The wire (102) is wired with fast bonding on the side.
次に第５図（ｂ）に示すように接続ワイヤ成形治具（２
０５）ヲワイヤ（１０２） １ｍ対向して配置し矢印（
２０１）方向に水平に動かし、第５図（ｃ）の如く、ワ
イヤ（１０２）を成形し、矢印（２０２）方向に後退し
成形を終了する。ワイヤ（１０２）の成形が完了した状
態を第５図（ｄ）に示す。この接続ワイヤ成形治具（２
０５）はワイヤ（１０２）径に相当した溝幅例えばワイ
ヤ径の２乃至３割増の幅を有している。この理由は、ワ
イヤ（１０２）がその接続点間の略中央でワイヤ倒れを
起こすことが多いので、この現象を機械的に矯正して成
形するためである。またこの溝を欠くとワイヤ（１０２
）は成形治具（２０５）の幅方向（図の表面から裏面方
向）に自由となりワイヤ（１０２）の成形が定形性がな
くなる。Next, as shown in Fig. 5(b), a connection wire forming jig (2
05) Wires (102) Place them 1m opposite each other and mark them with the arrows (
201) to form the wire (102) as shown in FIG. 5(c), and then retreat in the direction of the arrow (202) to complete the forming. FIG. 5(d) shows a state in which the forming of the wire (102) is completed. This connection wire forming jig (2
05) has a groove width corresponding to the diameter of the wire (102), for example, a width that is 20 to 30% larger than the wire diameter. The reason for this is that since the wire (102) often collapses at approximately the center between its connection points, this phenomenon is mechanically corrected and shaped. Also, if this groove is missing, the wire (102
) becomes free in the width direction of the forming jig (205) (from the front surface to the back surface in the figure), and the wire (102) is no longer shaped.
以下第５図（、）から第５図（ｄ）をくり返し集積回路
（２）の出力（２Ｎ）数の単位にて内側同志のワイヤボ
ンディングを行なう。この後、第５図（ｅ）に示すよう
に外側同志のワイヤ（１０３）をワイヤリングし高密度
に配された段差を有する接続端子間のワイヤボンディン
グを終了する。Hereinafter, steps from FIG. 5(,) to FIG. 5(d) are repeated to perform internal wire bonding in units of the number of outputs (2N) of the integrated circuit (2). Thereafter, as shown in FIG. 5(e), the outer wires (103) are wired to complete the wire bonding between the connection terminals having steps arranged at high density.
第５図（ｆ）はワイヤ（１０２）を成形しているときの
ワイヤ（１０２）と接続ワイヤ成形治具（２０５）の位
置関係を示している。第５図（ｆ）において、接続ワイ
ヤ形成治具（２０５）のその先端部に角度αを鈍角とし
て設けている。この角度αを鈍角として設けることによ
り、ワイヤ（１０２）と接続ワイヤ成形治具（２０５）
の溝内での摩擦力を小さくできワイヤ（１０２）の成形
が容易となるばかりでなく、ポンディングパッドからの
剥離現象をなくすことが出来、さらに成形速度の高速化
をはかることが可能となる。FIG. 5(f) shows the positional relationship between the wire (102) and the connection wire forming jig (205) when the wire (102) is being formed. In FIG. 5(f), an obtuse angle α is provided at the tip of the connection wire forming jig (205). By setting this angle α as an obtuse angle, the wire (102) and the connection wire forming jig (205)
This not only makes it easier to mold the wire (102) by reducing the frictional force within the groove, but also eliminates the phenomenon of peeling from the bonding pad, and further increases the molding speed. .
また第５図（ｇ）を参照して接続ワイヤ成形治具（２０
５）の他の実施例を説明する。この接続ワイヤ成形治具
（２０５）は一本単位でのワイヤ成形を例えば１集積回
路単位にて内側同志をワイヤリングした後、複数のワイ
ヤを同時に成形することが出来る。この接続ワイヤ成形
治具（２０５）の溝間隔は無論集積回路（２）の内側端
子のピッチＰで設ける。また図示していないが、同ピツ
チで先端形状は、波形の三角形状であっても良い。Also, referring to FIG. 5(g), the connection wire forming jig (20
Another example of 5) will be explained. This connection wire forming jig (205) can form a plurality of wires at the same time after forming the wires one by one, for example, by wiring the insides of each integrated circuit. The groove spacing of this connection wire forming jig (205) is of course set at the pitch P of the inner terminals of the integrated circuit (2). Although not shown, the tip may have a wavy triangular shape with the same pitch.
上述の構成により、本発明は接続端子を近距離同志接続
する接続ワイヤを成形後、接続端子を遠距離同志接続す
る接続ワイヤをワイヤリングすると、ワイヤ間のピッチ
間隔が広くなり、ワイヤ間の接触不良事故を防止するこ
とができる。With the above-mentioned configuration, the present invention is capable of forming connection wires that connect connection terminals at short distances, and then wiring connection wires that connect connection terminals at long distances.The pitch between the wires increases, and poor contact between the wires occurs. Accidents can be prevented.
第１図はサーマルヘッドを説明する説明図、第２図（、
）乃至第２図（ｂ）は従来の段差のあるボンディング状
態を示す模式図、第３図（、）乃至第３図（ｅ）は本発
明のワイヤボンディング方法の一実施例を説明する説明
図、第４図は本発明のワイヤボンディング方法の他の実
施に用いる吸着装置を示す一部切欠斜視図、第５図（、
）乃至第５図（ｇ）は本発明のワイヤボンディング方法
の他の実施例を説明する説明図である。
（１０２） 、 （１０３）・・・接続ワイヤ（１０５
）・・・ノズル
（６０）・・・吸着装置
代理人 弁理士 則 近 憲 佑（ほか１名）第 １
図
、マ
第 ２ 図
（ρ）
第 ３ 図
第 ５ 図Figure 1 is an explanatory diagram explaining the thermal head, Figure 2 (
) to 2(b) are schematic diagrams showing conventional bonding states with steps, and FIGS. 3(, ) to 3(e) are explanatory diagrams illustrating an embodiment of the wire bonding method of the present invention. , FIG. 4 is a partially cutaway perspective view showing a suction device used in another implementation of the wire bonding method of the present invention, and FIG.
) to FIG. 5(g) are explanatory diagrams illustrating other embodiments of the wire bonding method of the present invention. (102), (103)...Connection wire (105
)... Nozzle (60)... Adsorption device agent Patent attorney Noriyuki Chika (and 1 other person) No. 1
Figure 2 (ρ) Figure 3 Figure 5
Claims (4)
遠距離同志それぞれ対応して配設する工程と、この接続
端子の近距離同志をそれぞれ接続ワイヤで接続する工程
と、前記近距離同志の接続ワイヤを真空吸着して成形し
且つ押圧する工程と、前記接続端子の遠距離同志をそれ
ぞれ接続ワイヤで接続する工程とを有することを特徴と
するワイヤボンディング方法。(1) A step of arranging staggered connection terminals having steps so as to correspond to near-distance comrades and long-distance comrades, respectively, a step of connecting the short-distance comrades of these connection terminals with connection wires, and a step of respectively connecting the short-distance comrades of the above-mentioned short-distance comrades. A wire bonding method comprising the steps of: forming and pressing the connection wire by vacuum suction; and connecting the long-distance connection terminals with the connection wires.
５００ｍＨＨの範囲にあることを特徴とする特許請求の
範囲第１項記載のワイヤボンディング方法。(2) The wire bonding method according to claim 1, wherein the vacuum suction force is in a range of about 300 mHg, F+ to about 500 mHH.
５朋の範囲にあることを特徴とする特許請求の範囲第１
項記載のワイヤボンディング方法。(3) The size of the step is approximately Q, 51m to approximately 1.
Claim 1 characterized in that it is within the scope of 5.
Wire bonding method described in section.
し且つ押圧する工程は、前記近距離同志の接続ワイヤの
全部または複数を一度に真空吸着して成形し且つ押圧す
る工程であることを特徴とする特許請求の範囲第１項及
び第２項記載のワイヤボンディング方法。(4) The step of vacuum-chucking, forming, and pressing the short-distance connecting wires is a step of vacuum-chucking, molding, and pressing all or more of the short-distance connecting wires at once. A wire bonding method according to claims 1 and 2, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58180484A JPS6074540A (en) | 1983-09-30 | 1983-09-30 | Wire-bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58180484A JPS6074540A (en) | 1983-09-30 | 1983-09-30 | Wire-bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6074540A true JPS6074540A (en) | 1985-04-26 |
Family
ID=16084028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58180484A Pending JPS6074540A (en) | 1983-09-30 | 1983-09-30 | Wire-bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074540A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287637A (en) * | 1988-09-26 | 1990-03-28 | Nec Corp | Semiconductor integrated circuit device and manufacture thereof |
| CN108161305A (en) * | 2017-12-29 | 2018-06-15 | 京信通信系统（中国）有限公司 | Fixing means before the weldering of coaxial cable |
-
1983
- 1983-09-30 JP JP58180484A patent/JPS6074540A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287637A (en) * | 1988-09-26 | 1990-03-28 | Nec Corp | Semiconductor integrated circuit device and manufacture thereof |
| CN108161305A (en) * | 2017-12-29 | 2018-06-15 | 京信通信系统（中国）有限公司 | Fixing means before the weldering of coaxial cable |
| CN108161305B (en) * | 2017-12-29 | 2020-09-29 | 京信通信技术(广州)有限公司 | Welding method of coaxial cable |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000114304A (en) | Wire bonding method | |
| WO2002068145A1 (en) | Controlled attenuation capillary | |
| JP4401037B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPS6074540A (en) | Wire-bonding | |
| WO2001083152A1 (en) | Efficient energy transfer capillary | |
| JP2727970B2 (en) | Bonding tool | |
| US20180211931A1 (en) | Semiconductor structure and manufacturing method thereof | |
| JPS60176245A (en) | Wire bonding method | |
| JPS6143436A (en) | Bonding process | |
| JPH06302638A (en) | Semiconductor device | |
| JPH11274195A (en) | Method and apparatus for manufacturing resin encapsulated semiconductor device | |
| JP2645235B2 (en) | Wire bonding method | |
| US5279508A (en) | Shifting connection device | |
| JP2954109B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP2803801B2 (en) | Semiconductor manufacturing equipment | |
| JP2726211B2 (en) | Method of manufacturing protection element for semiconductor device | |
| JP3293757B2 (en) | Method of manufacturing lead frame assembly for manufacturing semiconductor device | |
| KR0157898B1 (en) | Package printed circuit board | |
| JPS6113380B2 (en) | ||
| JPH04225540A (en) | Wire bonder | |
| JPH04184947A (en) | Wire-bonding device | |
| JPH11145179A (en) | Semiconductor device | |
| JP2766991B2 (en) | Semiconductor device | |
| JPS5874064A (en) | Lead frame | |
| KR200148118Y1 (en) | Stacked semiconductor package |