JPS60157216A - 分子線エピタキシヤル装置のウエハ装着構造 - Google Patents
分子線エピタキシヤル装置のウエハ装着構造Info
- Publication number
- JPS60157216A JPS60157216A JP59012683A JP1268384A JPS60157216A JP S60157216 A JPS60157216 A JP S60157216A JP 59012683 A JP59012683 A JP 59012683A JP 1268384 A JP1268384 A JP 1268384A JP S60157216 A JPS60157216 A JP S60157216A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- molecular
- molybdenum
- molecular beam
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59012683A JPS60157216A (ja) | 1984-01-26 | 1984-01-26 | 分子線エピタキシヤル装置のウエハ装着構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59012683A JPS60157216A (ja) | 1984-01-26 | 1984-01-26 | 分子線エピタキシヤル装置のウエハ装着構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60157216A true JPS60157216A (ja) | 1985-08-17 |
| JPH0136979B2 JPH0136979B2 (enExample) | 1989-08-03 |
Family
ID=11812169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59012683A Granted JPS60157216A (ja) | 1984-01-26 | 1984-01-26 | 分子線エピタキシヤル装置のウエハ装着構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60157216A (enExample) |
-
1984
- 1984-01-26 JP JP59012683A patent/JPS60157216A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0136979B2 (enExample) | 1989-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5210869A (en) | Thin film forming method | |
| JPH05139882A (ja) | 分子線源 | |
| JPS60157216A (ja) | 分子線エピタキシヤル装置のウエハ装着構造 | |
| Clemens et al. | Growth and characterization of PbTe epitaxial films grown by hot-wall epitaxy | |
| Tuominen et al. | Growth-related structural defects in seeded sublimation-grown SiC | |
| GB2170043A (en) | Apparatus for the growth of semiconductor crystals | |
| JPH04276066A (ja) | スパッタリング装置 | |
| JP2526036B2 (ja) | 分子線エピタキシヤル装置のシヤツタ構造 | |
| JPS61220414A (ja) | 分子線発生装置 | |
| JP3323522B2 (ja) | 分子線セル | |
| JPS60240119A (ja) | 分子線結晶成長法 | |
| JPH02243758A (ja) | 真空装置 | |
| JP2671791B2 (ja) | 分子線源 | |
| JP3501412B2 (ja) | パルス状原料導入セル | |
| JPH06345590A (ja) | 分子線結晶成長装置 | |
| JPS60225421A (ja) | 分子線エピタキシ−用蒸発源ルツボ | |
| JPH05887A (ja) | 分子線結晶成長装置 | |
| JPH01278494A (ja) | 分子線発生機構 | |
| JPH09166501A (ja) | 温度測定装置及び温度測定方法 | |
| JP2778137B2 (ja) | 薄膜形成方法及びその装置 | |
| JPH01138194A (ja) | 分子線エピタキシャル成長装置 | |
| JPS6142125A (ja) | Mbe用基板およびその温度測定法 | |
| JPS61122193A (ja) | 分子線エピタキシヤル成長方法 | |
| JPH097947A (ja) | 分子線セル | |
| González et al. | GaInAs/GaAsP buffer layers for low temperature grown GaAs on Si substrates |