JPS60157216A - 分子線エピタキシヤル装置のウエハ装着構造 - Google Patents

分子線エピタキシヤル装置のウエハ装着構造

Info

Publication number
JPS60157216A
JPS60157216A JP59012683A JP1268384A JPS60157216A JP S60157216 A JPS60157216 A JP S60157216A JP 59012683 A JP59012683 A JP 59012683A JP 1268384 A JP1268384 A JP 1268384A JP S60157216 A JPS60157216 A JP S60157216A
Authority
JP
Japan
Prior art keywords
wafer
molecular
molybdenum
molecular beam
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59012683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136979B2 (enExample
Inventor
Yuuji Ishida
祐士 石田
Haruo Tanaka
田中 治夫
Masahito Mushigami
雅人 虫上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59012683A priority Critical patent/JPS60157216A/ja
Publication of JPS60157216A publication Critical patent/JPS60157216A/ja
Publication of JPH0136979B2 publication Critical patent/JPH0136979B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59012683A 1984-01-26 1984-01-26 分子線エピタキシヤル装置のウエハ装着構造 Granted JPS60157216A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59012683A JPS60157216A (ja) 1984-01-26 1984-01-26 分子線エピタキシヤル装置のウエハ装着構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59012683A JPS60157216A (ja) 1984-01-26 1984-01-26 分子線エピタキシヤル装置のウエハ装着構造

Publications (2)

Publication Number Publication Date
JPS60157216A true JPS60157216A (ja) 1985-08-17
JPH0136979B2 JPH0136979B2 (enExample) 1989-08-03

Family

ID=11812169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59012683A Granted JPS60157216A (ja) 1984-01-26 1984-01-26 分子線エピタキシヤル装置のウエハ装着構造

Country Status (1)

Country Link
JP (1) JPS60157216A (enExample)

Also Published As

Publication number Publication date
JPH0136979B2 (enExample) 1989-08-03

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