JPS60156752U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS60156752U JPS60156752U JP4292684U JP4292684U JPS60156752U JP S60156752 U JPS60156752 U JP S60156752U JP 4292684 U JP4292684 U JP 4292684U JP 4292684 U JP4292684 U JP 4292684U JP S60156752 U JPS60156752 U JP S60156752U
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- semiconductor equipment
- semiconductor device
- insulating
- sealing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Casings For Electric Apparatus (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
１第１図、第２図は夫々本考案の実施例のデュアルイン
型の半導体装置用パッケージの断面図である。
１．１１・・・・・・封止材料、２，１２・・・・・・
絶縁蓋部、３，１３・・・・・・絶縁基板、４・・・・
・・段付き部、５．１５・・・・・・外部リード、６，
１６・・・・・・キャビティ、１７・・・・・・テーパ
部。1. FIG. 1 and FIG. 2 are sectional views of a dual-in type semiconductor device package according to an embodiment of the present invention. 1.11... Sealing material, 2,12...
Insulating lid part, 3, 13...Insulating substrate, 4...
...Stepped part, 5.15...External lead, 6,
16...Cavity, 17...Tapered part.
Claims (1)
外部へ導出するリードフレーム、絶縁蓋部を順次取付け
た半導体装置において、前記絶縁基板の底面側に段ある
いはテーパ部を設けて絶縁基板の巾を小さくした事を特
徴とする半導体装置。 、（２）前記絶縁基板に設ける段の高さは絶縁基板の厚
みの１７４〜１／２である事を特徴とする請求の範囲第
１項記載の半導体装置。(1) An insulating substrate to which a semiconductor element is fixed, a sealing material,
1. A semiconductor device in which a lead frame leading to the outside and an insulating cover are sequentially attached, wherein the width of the insulating substrate is reduced by providing a step or a tapered portion on the bottom side of the insulating substrate. (2) The semiconductor device according to claim 1, wherein the height of the step provided on the insulating substrate is 174 to 1/2 of the thickness of the insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4292684U JPS60156752U (en) | 1984-03-26 | 1984-03-26 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4292684U JPS60156752U (en) | 1984-03-26 | 1984-03-26 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60156752U true JPS60156752U (en) | 1985-10-18 |
Family
ID=30554117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4292684U Pending JPS60156752U (en) | 1984-03-26 | 1984-03-26 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60156752U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5879739A (en) * | 1981-11-05 | 1983-05-13 | Toshiba Corp | Sheath for semiconductor |
-
1984
- 1984-03-26 JP JP4292684U patent/JPS60156752U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5879739A (en) * | 1981-11-05 | 1983-05-13 | Toshiba Corp | Sheath for semiconductor |
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