JPS60150632A - 被処理物の離脱装置 - Google Patents

被処理物の離脱装置

Info

Publication number
JPS60150632A
JPS60150632A JP577884A JP577884A JPS60150632A JP S60150632 A JPS60150632 A JP S60150632A JP 577884 A JP577884 A JP 577884A JP 577884 A JP577884 A JP 577884A JP S60150632 A JPS60150632 A JP S60150632A
Authority
JP
Japan
Prior art keywords
processed
item
dielectric film
gas
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP577884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0263306B2 (enrdf_load_stackoverflow
Inventor
Tsunemasa Tokura
戸倉　常正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP577884A priority Critical patent/JPS60150632A/ja
Publication of JPS60150632A publication Critical patent/JPS60150632A/ja
Publication of JPH0263306B2 publication Critical patent/JPH0263306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP577884A 1984-01-18 1984-01-18 被処理物の離脱装置 Granted JPS60150632A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP577884A JPS60150632A (ja) 1984-01-18 1984-01-18 被処理物の離脱装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP577884A JPS60150632A (ja) 1984-01-18 1984-01-18 被処理物の離脱装置

Publications (2)

Publication Number Publication Date
JPS60150632A true JPS60150632A (ja) 1985-08-08
JPH0263306B2 JPH0263306B2 (enrdf_load_stackoverflow) 1990-12-27

Family

ID=11620562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP577884A Granted JPS60150632A (ja) 1984-01-18 1984-01-18 被処理物の離脱装置

Country Status (1)

Country Link
JP (1) JPS60150632A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997962A (en) * 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US6194037B1 (en) 1995-12-28 2001-02-27 Kokusai Electric Co., Ltd. Method of plasma processing a substrate placed on a substrate table
US9130000B2 (en) 2008-09-30 2015-09-08 Mitsubishi Heavy Industries Wafer bonding device and wafer bonding method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997962A (en) * 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US6194037B1 (en) 1995-12-28 2001-02-27 Kokusai Electric Co., Ltd. Method of plasma processing a substrate placed on a substrate table
US9130000B2 (en) 2008-09-30 2015-09-08 Mitsubishi Heavy Industries Wafer bonding device and wafer bonding method

Also Published As

Publication number Publication date
JPH0263306B2 (enrdf_load_stackoverflow) 1990-12-27

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