JPS60150293A - メモリ回路 - Google Patents

メモリ回路

Info

Publication number
JPS60150293A
JPS60150293A JP59249616A JP24961684A JPS60150293A JP S60150293 A JPS60150293 A JP S60150293A JP 59249616 A JP59249616 A JP 59249616A JP 24961684 A JP24961684 A JP 24961684A JP S60150293 A JPS60150293 A JP S60150293A
Authority
JP
Japan
Prior art keywords
circuit
level
output
signal
common data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59249616A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142349B2 (enrdf_load_stackoverflow
Inventor
Noburo Tanimura
谷村 信朗
宏 福田
光太郎 西村
安井 徳政
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59249616A priority Critical patent/JPS60150293A/ja
Publication of JPS60150293A publication Critical patent/JPS60150293A/ja
Publication of JPS6142349B2 publication Critical patent/JPS6142349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP59249616A 1984-11-28 1984-11-28 メモリ回路 Granted JPS60150293A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59249616A JPS60150293A (ja) 1984-11-28 1984-11-28 メモリ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59249616A JPS60150293A (ja) 1984-11-28 1984-11-28 メモリ回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14413378A Division JPS5570993A (en) 1978-11-24 1978-11-24 Memory circuit

Publications (2)

Publication Number Publication Date
JPS60150293A true JPS60150293A (ja) 1985-08-07
JPS6142349B2 JPS6142349B2 (enrdf_load_stackoverflow) 1986-09-20

Family

ID=17195673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59249616A Granted JPS60150293A (ja) 1984-11-28 1984-11-28 メモリ回路

Country Status (1)

Country Link
JP (1) JPS60150293A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267790A (ja) * 1985-09-20 1987-03-27 Hitachi Vlsi Eng Corp スタテイツク型ram

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267790A (ja) * 1985-09-20 1987-03-27 Hitachi Vlsi Eng Corp スタテイツク型ram

Also Published As

Publication number Publication date
JPS6142349B2 (enrdf_load_stackoverflow) 1986-09-20

Similar Documents

Publication Publication Date Title
US4924439A (en) Semiconductor integrated circuit
US4300213A (en) Memory circuit with increased operating speed
JP2586187B2 (ja) 半導体記憶装置
JPS63179617A (ja) Mos技術を応用した電圧スイッチ回路
JPS60258791A (ja) Mosスタテイツク型ram
US4564925A (en) Semiconductor memory
US4858183A (en) ECL high speed semiconductor memory and method of accessing stored information therein
KR910009408B1 (ko) 반도체기억장치
JP4365911B2 (ja) 半導体集積回路
US3629612A (en) Operation of field-effect transistor circuit having substantial distributed capacitance
JPS60150293A (ja) メモリ回路
US4760562A (en) MOS static memory circuit
KR100227300B1 (ko) 반도체 기억 장치
JPS6020396A (ja) 信号入力回路
JPS5819791A (ja) 半導体記憶装置
JPS60242583A (ja) メモリ回路
US5136535A (en) Hybrid CMOS-bipolar memory cell
JPS638555B2 (enrdf_load_stackoverflow)
JP2531674B2 (ja) Mos・バイポ−ラ複合マルチプレクサ回路を備えた半導体メモリ装置
JPS6235191B2 (enrdf_load_stackoverflow)
JPS5870485A (ja) メモリ装置
JPH0778480A (ja) 半導体集積回路
JPS5846797B2 (ja) 半導体メモリ
JPH0262920B2 (enrdf_load_stackoverflow)
JPS6235189B2 (enrdf_load_stackoverflow)