JPS60136315A - マイクロイオンビ−ム加工方法およびその装置 - Google Patents

マイクロイオンビ−ム加工方法およびその装置

Info

Publication number
JPS60136315A
JPS60136315A JP24384883A JP24384883A JPS60136315A JP S60136315 A JPS60136315 A JP S60136315A JP 24384883 A JP24384883 A JP 24384883A JP 24384883 A JP24384883 A JP 24384883A JP S60136315 A JPS60136315 A JP S60136315A
Authority
JP
Japan
Prior art keywords
ion beam
sample
ion
processing
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24384883A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510822B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Yamaguchi
博司 山口
Akira Shimase
朗 嶋瀬
Satoshi Haraichi
原市　聰
Takeoki Miyauchi
宮内　建興
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24384883A priority Critical patent/JPS60136315A/ja
Publication of JPS60136315A publication Critical patent/JPS60136315A/ja
Publication of JPH0510822B2 publication Critical patent/JPH0510822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
  • Feedback Control In General (AREA)
JP24384883A 1983-12-26 1983-12-26 マイクロイオンビ−ム加工方法およびその装置 Granted JPS60136315A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24384883A JPS60136315A (ja) 1983-12-26 1983-12-26 マイクロイオンビ−ム加工方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24384883A JPS60136315A (ja) 1983-12-26 1983-12-26 マイクロイオンビ−ム加工方法およびその装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4154732A Division JP2529057B2 (ja) 1992-06-15 1992-06-15 マイクロイオンビ―ム加工方法

Publications (2)

Publication Number Publication Date
JPS60136315A true JPS60136315A (ja) 1985-07-19
JPH0510822B2 JPH0510822B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=17109848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24384883A Granted JPS60136315A (ja) 1983-12-26 1983-12-26 マイクロイオンビ−ム加工方法およびその装置

Country Status (1)

Country Link
JP (1) JPS60136315A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60193341A (ja) * 1984-03-15 1985-10-01 Mitsubishi Electric Corp エツチング方法
JPS62174918A (ja) * 1986-01-29 1987-07-31 Hitachi Ltd イオンビ−ム照射装置
JPS63228720A (ja) * 1987-03-18 1988-09-22 Jeol Ltd イオンビ−ム装置
JPH01168881A (ja) * 1987-12-23 1989-07-04 Anelva Corp 走査系を備えたイオンビーム照射方法および装置
JPH0258328A (ja) * 1988-08-24 1990-02-27 Hitachi Ltd イオンビーム加工方法
JPH05182932A (ja) * 1992-06-15 1993-07-23 Hitachi Ltd マイクロイオンビーム加工方法
JP2006344931A (ja) * 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
JP2009270245A (ja) * 2008-05-08 2009-11-19 Sound Team Enterprise Co Ltd 首部覆いを兼ねる帽子
JP2010507782A (ja) * 2006-10-20 2010-03-11 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
JP2010194546A (ja) * 2009-02-23 2010-09-09 Canon Inc 荷電粒子ビーム加工方法
JP2010279974A (ja) * 2009-06-05 2010-12-16 Canon Inc 光学素子加工方法
US8357913B2 (en) 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
US9555499B2 (en) 2012-08-23 2017-01-31 Element Six Technologies Limited Method of cutting super-hard materials using an electron beam and a range of beam scanning velocities

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086794A (enrdf_load_stackoverflow) * 1973-12-06 1975-07-12
JPS5680131A (en) * 1979-12-05 1981-07-01 Nec Corp Method and device for ion beam etching
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5086794A (enrdf_load_stackoverflow) * 1973-12-06 1975-07-12
JPS5680131A (en) * 1979-12-05 1981-07-01 Nec Corp Method and device for ion beam etching
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60193341A (ja) * 1984-03-15 1985-10-01 Mitsubishi Electric Corp エツチング方法
JPS62174918A (ja) * 1986-01-29 1987-07-31 Hitachi Ltd イオンビ−ム照射装置
JPS63228720A (ja) * 1987-03-18 1988-09-22 Jeol Ltd イオンビ−ム装置
JPH01168881A (ja) * 1987-12-23 1989-07-04 Anelva Corp 走査系を備えたイオンビーム照射方法および装置
JPH0258328A (ja) * 1988-08-24 1990-02-27 Hitachi Ltd イオンビーム加工方法
JPH05182932A (ja) * 1992-06-15 1993-07-23 Hitachi Ltd マイクロイオンビーム加工方法
JP2006344931A (ja) * 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
JP2010507782A (ja) * 2006-10-20 2010-03-11 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
US8357913B2 (en) 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
US8525137B2 (en) 2006-10-20 2013-09-03 Fei Company Method for creating S/TEM sample and sample structure
US8993962B2 (en) 2006-10-20 2015-03-31 Fei Company Method and apparatus for sample extraction and handling
US9275831B2 (en) 2006-10-20 2016-03-01 Fei Company Method for S/TEM sample analysis
US9336985B2 (en) 2006-10-20 2016-05-10 Fei Company Method for creating S/TEM sample and sample structure
US9349570B2 (en) 2006-10-20 2016-05-24 Fei Company Method and apparatus for sample extraction and handling
US9581526B2 (en) 2006-10-20 2017-02-28 Fei Company Method for S/TEM sample analysis
JP2009270245A (ja) * 2008-05-08 2009-11-19 Sound Team Enterprise Co Ltd 首部覆いを兼ねる帽子
JP2010194546A (ja) * 2009-02-23 2010-09-09 Canon Inc 荷電粒子ビーム加工方法
JP2010279974A (ja) * 2009-06-05 2010-12-16 Canon Inc 光学素子加工方法
US9555499B2 (en) 2012-08-23 2017-01-31 Element Six Technologies Limited Method of cutting super-hard materials using an electron beam and a range of beam scanning velocities

Also Published As

Publication number Publication date
JPH0510822B2 (enrdf_load_stackoverflow) 1993-02-10

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Legal Events

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EXPY Cancellation because of completion of term