JPS60128620A - プラズマ装置の制御方法 - Google Patents

プラズマ装置の制御方法

Info

Publication number
JPS60128620A
JPS60128620A JP23639183A JP23639183A JPS60128620A JP S60128620 A JPS60128620 A JP S60128620A JP 23639183 A JP23639183 A JP 23639183A JP 23639183 A JP23639183 A JP 23639183A JP S60128620 A JPS60128620 A JP S60128620A
Authority
JP
Japan
Prior art keywords
frequency power
gas
high frequency
value
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23639183A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0457090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kunihiro Fujiwara
藤原　邦弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23639183A priority Critical patent/JPS60128620A/ja
Publication of JPS60128620A publication Critical patent/JPS60128620A/ja
Publication of JPH0457090B2 publication Critical patent/JPH0457090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
JP23639183A 1983-12-16 1983-12-16 プラズマ装置の制御方法 Granted JPS60128620A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23639183A JPS60128620A (ja) 1983-12-16 1983-12-16 プラズマ装置の制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23639183A JPS60128620A (ja) 1983-12-16 1983-12-16 プラズマ装置の制御方法

Publications (2)

Publication Number Publication Date
JPS60128620A true JPS60128620A (ja) 1985-07-09
JPH0457090B2 JPH0457090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-09-10

Family

ID=17000071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23639183A Granted JPS60128620A (ja) 1983-12-16 1983-12-16 プラズマ装置の制御方法

Country Status (1)

Country Link
JP (1) JPS60128620A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373524A (ja) * 1986-09-16 1988-04-04 Matsushita Electronics Corp プラズマ処理方法
JP2010135422A (ja) * 2008-12-02 2010-06-17 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置の運転方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373524A (ja) * 1986-09-16 1988-04-04 Matsushita Electronics Corp プラズマ処理方法
JP2010135422A (ja) * 2008-12-02 2010-06-17 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置の運転方法

Also Published As

Publication number Publication date
JPH0457090B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-09-10

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