JPS60128620A - Method for control of plasma device - Google Patents

Method for control of plasma device

Info

Publication number
JPS60128620A
JPS60128620A JP23639183A JP23639183A JPS60128620A JP S60128620 A JPS60128620 A JP S60128620A JP 23639183 A JP23639183 A JP 23639183A JP 23639183 A JP23639183 A JP 23639183A JP S60128620 A JPS60128620 A JP S60128620A
Authority
JP
Japan
Prior art keywords
frequency power
gas
high frequency
value
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23639183A
Other languages
Japanese (ja)
Other versions
JPH0457090B2 (en
Inventor
Kunihiro Fujiwara
藤原　邦弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23639183A priority Critical patent/JPS60128620A/en
Publication of JPS60128620A publication Critical patent/JPS60128620A/en
Publication of JPH0457090B2 publication Critical patent/JPH0457090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To contrive improvement in workability by a method wherein the matched impedance to be used when a process is performed is set in advance, the titled device is brought in the state wherein electric power will be discharged easily by increasing the pressure of gas in a chamber and high frequency power by stages, and the high frequency power and the flow rate of gas are brought to the desired value after discharge of electricity. CONSTITUTION:The desired value of processing condition, i.e., the value of high frequency power, and the matched impedance in the value of O2 gas flow rate are set in advance using the adjustment elements 10 and 11 of an impedance maching circuit 3. When the degree of vacuum of 10<-2>-10<-3>Torr is obtained, relatively low frequency electric power and O2 gas flow of about 0.5Torr or thereabout are applied. Then, the high frequency power is increased by stages. When electric discharge is started soon between two electrodes 5, the impedance is changed from this point of time in the direction where a matching state can be obtained. After the discharge has been started, the high frequency power and the flow rate of O2 gas are raised to the value of processing condition.

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明はプラズマ装置の制御方法に係り、特に半導体ウ
ェハの処理、加工時に用いるプラズマ装置におけるイン
ピーダンスのマツチングを容易にするこの種制御方法に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a control method for a plasma apparatus, and more particularly to a control method of this type that facilitates impedance matching in a plasma apparatus used during processing and processing of semiconductor wafers.

［発明の技術的背景］ 従来から半導体ウェハの酸化膜エツチング又はレジスト
剥離はプラズマ装置が使用される。この装置は、低真空
状態のチャンバー内に刻面電極が設けら１Ｌ、このチャ
ンバー内にガスを供給すると共に電極間に高周波電力を
印加してチャンバー内のガスを３ｕ　１１１１して活性
化し、半導体ウェハをエツチング又はレジスト剥離する
ものである。[Technical Background of the Invention] Conventionally, plasma equipment has been used for etching oxide films or stripping resists from semiconductor wafers. This device has a 1L cut-surface electrode installed in a chamber in a low vacuum state, supplies gas into the chamber, and applies high frequency power between the electrodes to activate the gas in the chamber by 3U 1111, which activates the semiconductor. This is for etching the wafer or stripping the resist.

チャンバーに高周波電界及びガスを加える場合、チャン
バー内に１０−２〜１０−３Ｔｏｒｒ程度の真空状態に
した後、処理条件値の高周波電力およびガス流爪が一度
に供給される。そして、チャンバーに電界をかけるとき
は、負荷に対して無効な反別電力が最小となるよう反射
電力を遂時追従しながらインピーダンス整合回路におい
てインピーダンスを調整することにより安定かつ有効に
高周波電界が供給される。チャンバーに電界がかけられ
ると。When applying a high frequency electric field and gas to the chamber, the chamber is created in a vacuum state of about 10 -2 to 10 -3 Torr, and then high frequency electric power and gas flow nails corresponding to processing condition values are supplied at once. When applying an electric field to the chamber, a stable and effective high-frequency electric field is supplied by adjusting the impedance in the impedance matching circuit while tracking the reflected power in order to minimize the amount of power that is ineffective against the load. be done. When an electric field is applied to the chamber.

電極間で放電が起こり、チャンバー内のガスは遊離して
活性ガスとなるが、電極間の高周波インピーダンスは放
電開始前と開始後ではその差が極めて大きい。そこで、
一般的には、放電開始するまでは、その状態における電
極間のインピーダンスに対してインピーダンス整合回路
を調整してチャンバーに有効な電力（反則電力を最小）
を供給させて放電を行わせる。放電が開始すると、徹電
状態の電極間のインピーダンスに対して再びインピーダ
ンス整合回路が調整されて反射電力を最小とするという
方法が一般的である。A discharge occurs between the electrodes, and the gas in the chamber is liberated to become an active gas, but the difference in high frequency impedance between the electrodes is extremely large before and after the start of the discharge. Therefore,
Generally, until the discharge starts, the impedance matching circuit is adjusted to the impedance between the electrodes in that state to provide the effective power to the chamber (minimize the foul power).
is supplied to cause discharge. When the discharge starts, the common method is to again adjust the impedance matching circuit to the impedance between the electrodes in the overcurrent state to minimize the reflected power.

［背景技術の問題点コ しかしながら、」上記方法によると、電極間の放電開始
前と開始後のインピーダンスの差が大きいため、インピ
ーダンス整合回路の調整範囲を広くするように設計する
必要があり、また装置を作動する毎に、人的に或は自動
的に調整を行わなければならず、装置を自動運転とする
場合はインピーダンス整合回路の自動調整を制御する特
別な機構を必要とし高価にならざるｔ！：得ないという
難点がある。[Problems with the background art] However, according to the above method, since there is a large difference in impedance between the electrodes before and after the start of discharge, it is necessary to design the impedance matching circuit to have a wide adjustment range. Adjustment must be performed manually or automatically each time the device is operated, and if the device is to operate automatically, a special mechanism is required to control automatic adjustment of the impedance matching circuit, which is expensive. T! : There is a drawback that you cannot get it.

［発明の目的］ 本発明は上記従来の難点に鑑みなされたもので、電極間
の高周波インピーダンスはチャンバー内のガス圧により
変化する事実と、電極間の放電の容易さは電界の強さと
所定ガス圧との関係で容易にすることができるという事
実に着目して、予め処理時における整合インピーダンス
を設定しておき、処理時における高周波電力およびガス
流量の目的値に達する前にチャンバー内のガス圧および
高周波電力を段階的に上昇させて放電し易い状態にし、
放電し・た後に高周波電力およびガス流量を目的値とす
ることにより作業性を向上させるプラズマ装置の制御方
法を提供せんとするものである。[Object of the Invention] The present invention was made in view of the above-mentioned conventional difficulties, and it is based on the fact that the high frequency impedance between the electrodes changes depending on the gas pressure in the chamber, and the ease of discharge between the electrodes depends on the strength of the electric field and the specified gas pressure. Focusing on the fact that the matching impedance during processing can be easily adjusted in relation to the pressure, the matching impedance during processing is set in advance, and the gas pressure in the chamber is adjusted before the target values of high frequency power and gas flow rate during processing are reached. and increase the high frequency power in stages to make it easier to discharge,
It is an object of the present invention to provide a control method for a plasma device that improves workability by setting high frequency power and gas flow rate to target values after discharge.

［発明の概要コ 上記目的を達成するために本発明によれば、供給される
ガスの所定圧力の下でチャンバー内で対向する電極間に
所定値の高周波電力を印加して放電させ、該チャンバー
内のガスをＭ離させて試料を処理するプラズマ装置を制
御するにあたり、前記試料の処理時における高周波電力
値およびガス流量値の下で該電力印加時の整合インピー
ダンスを予め設定し、前記プラズマ装置の作動開始時か
ら該高周波電力と該ガス流量におけるガス圧とを処理時
の値まで段階的に変化゛させるプラズマ装置の制御方法
を構成する。[Summary of the Invention] To achieve the above object, according to the present invention, a predetermined value of high-frequency power is applied between opposing electrodes in a chamber under a predetermined pressure of supplied gas to cause discharge, and the chamber In controlling a plasma device that processes a sample by separating the gas in the sample by M, the matching impedance at the time of power application is set in advance under the high frequency power value and gas flow rate value during the sample processing, and the matching impedance at the time of power application is set in advance. A control method for a plasma apparatus is configured in which the high frequency power and the gas pressure at the gas flow rate are changed stepwise from the start of operation to the values at the time of processing.

［発明の実ｈ℃例コ 以下、本発明の好ましい実施例を図面により説明する。[Example of actual invention Preferred embodiments of the present invention will be described below with reference to the drawings.

本発明の制御方法におけるプラズマ装置の原理図を第１
図に示す。第１図においで、高周波電源装置１から進行
波及び反射波の電力指示計２およびインピーダンス整合
回路３を介してチャンバー・４内の電極５の一極へ接続
され、他の一極はアースされる。チャンバー４にはガス
供給１」６が設けられ、ガス流量計７で監視される。ま
た、排気１」８が設けられ真空ポンプ（図示せず）に接
続されておリチャンパー４内の真空度が真空ＭＩ’９に
よって示される。このような原理において本実施例では
供給ガスを０２　（酸素）とし、また高周波電源装置１
は周波数１３．５（ｉＭＨｚの高周波高出力電力発生装
置を用いる。The principle diagram of the plasma device in the control method of the present invention is shown in the first diagram.
As shown in the figure. In FIG. 1, a high frequency power supply 1 is connected to one pole of an electrode 5 in a chamber 4 via a power indicator 2 for traveling waves and reflected waves and an impedance matching circuit 3, and the other pole is grounded. Ru. The chamber 4 is provided with a gas supply 1''6, which is monitored by a gas flow meter 7. Further, an exhaust 1'8 is provided and connected to a vacuum pump (not shown), and the degree of vacuum within the rechamber 4 is indicated by a vacuum MI'9. Based on this principle, in this embodiment, the supplied gas is 02 (oxygen), and the high frequency power supply device 1 is
uses a high-frequency, high-output power generator with a frequency of 13.5 (iMHz).

このような構成によるプラズマ装置の制御方法を第２図
をも含めて説明する。先ず、装＠運転前に、目的とする
処理条件値、即ち高周波電力値と。A method of controlling a plasma apparatus having such a configuration will be explained with reference to FIG. 2. First, before installation and operation, determine the target processing condition value, that is, the high frequency power value.

０２ガス流Ｍ（値における整合インピーダンスをインピ
ーダンス整合回路の調整累子１０、■］により予め設定
する。そして運転が開始されると（第２図Ａ）、真空ポ
ンプによりチャンバー４内を真空度】０−２〜１０−３
’ｌ’ｏｒｒになったところで比較的低い高周波電力と
、約０　、５　Ｔｏｒｒ程度までのガス圧とする０２ガ
ス流量が印加される（第２図曲線２０．２１）。因に、
この条イ／１において放電が開始する場合もある。02 Gas flow M (matching impedance at the value is set in advance by the adjustment factor 10 of the impedance matching circuit, ■). When operation is started (Fig. 2A), the vacuum level inside the chamber 4 is set by the vacuum pump. 0-2~10-3
When 'l'orr is reached, a relatively low high frequency power and a 02 gas flow rate to bring the gas pressure to about 0.5 Torr are applied (curve 20.21 in Figure 2). Incidentally,
Discharge may start in this row I/1.

次に、高周波電力をステップ的に上昇させてゆくが、こ
の時反射波電力値（第２図曲線２２）は高周波型ｌ原装
置からみたインピーダンスがマツチングしていないため
、印加電力に比例して人きくなる。ガス圧は０．１〜Ｏ
、５Ｔｏｒｒレベルで推移し、（第２図Ｂ）、やがて電
極５間で放電が開始すると、この時点からインピーダン
スはマツチングのとれる方向に変化する（第２図Ｃ）。Next, the high frequency power is increased stepwise, but at this time the reflected wave power value (curve 22 in Figure 2) is proportional to the applied power because the impedance seen from the high frequency type l original device is not matched. Become a people person. Gas pressure is 0.1~O
, 5 Torr level (FIG. 2B), and eventually a discharge starts between the electrodes 5, and from this point on, the impedance changes in the direction of matching (FIG. 2C).

これは、高周波電力の電界の強さとチャンバー４内のガ
ス圧との関係にお【プる放電の容易さを示している。This indicates that the ease of discharge depends on the relationship between the strength of the electric field of high-frequency power and the gas pressure in the chamber 4.

そして放電が開始した後、高周波電力と０２ガス流旦を
処理条件値まで」ニ昇させるものである。After the discharge starts, the high frequency power and the 02 gas flow rate are increased to the processing condition values.

この時本装置は、予め設定した整合インピーダンスによ
りマツチング状態に落ち着き、最初の整合インピーダン
スの調Ｊンだけで足糸３目的のマツチングを行うことが
できる。そこで、チャンバー４内のガスが遊離されて半
導体ウェハの処理を行うものである。At this time, the present device settles into a matching state using the preset matching impedance, and can match the three byssus threads only by adjusting the initial matching impedance. Therefore, the gas in the chamber 4 is released to process the semiconductor wafer.

［発明の効果］ 以上の実施例からも明らかなように本発明によれば、予
め処理時における整合インピーダンスを設定しておき、
処理時にお（づる高周波電力およびガス流量の目的値に
達する前にチャンバー内のガス圧および高周波電力を段
階的に−ｌニ昇させて放電し易い状態にし、放電した後
に高周波電力およびガス流量を目的値とすることにより
、本装置のインピーダンス整合■路の構成およびインピ
ーダンスマツチングの制御方法を容易とし、また省力化
により作業性を向」ニさせることができる。[Effects of the Invention] As is clear from the above embodiments, according to the present invention, the matching impedance at the time of processing is set in advance,
During treatment, the gas pressure and high frequency power in the chamber are raised stepwise to -l to make it easier to discharge before the high frequency power and gas flow rate reach the target values, and after the discharge, the high frequency power and gas flow rate are increased. By setting the target value, the configuration of the impedance matching path of the present device and the control method of impedance matching can be facilitated, and workability can be improved by saving labor.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明におけるプラズマ装置の原理図、第２図
は本発明による高周波電力値とガス流星値の制御推移を
示したグラフである。 １　・・・・・・・・高周波電源装置 ３　・・・・・・・・インピーダンス整合回路４　・・
・・・・・・　チャンバー ５・・・・・・・・電極FIG. 1 is a diagram showing the principle of the plasma apparatus according to the present invention, and FIG. 2 is a graph showing the control transition of the high frequency power value and the gas meteor value according to the present invention. 1 ...... High frequency power supply device 3 ...... Impedance matching circuit 4 ...
・・・・・・ Chamber 5・・・・・・ Electrode

Claims (1)

【特許請求の範囲】[Claims] 供給されるガスの所定圧力の下でチャンバー内で周面す
る電極間に所定値の高周波電力を印加して放電させ、該
チャンバー内のガスを３ｕ　ｉｌＩさせて試料を処理す
るプラズマ装置を制御するにあたり、前記試料の処理時
における高周波電力値およびガス流量値の下で該電力印
加時の整合インピーダンスを予め設定し、前記プラズマ
装置の作動開夕ｒＪ時から該高周波電力と該ガス流量に
おけるガス圧とを処理時の値まで段階的に変化させるこ
とを特徴とするプラズマ装置の制御方法。Under a predetermined pressure of the supplied gas, a predetermined value of high-frequency power is applied between the electrodes surrounding the chamber in the chamber to cause a discharge, and the gas in the chamber is brought to 3 u ill to control a plasma device that processes the sample. In this process, the matching impedance at the time of power application is set in advance under the high-frequency power value and gas flow rate value during the processing of the sample, and the gas pressure at the high-frequency power and the gas flow rate is set from the time rJ when the plasma apparatus starts operating. A method for controlling a plasma apparatus, characterized in that the value is changed stepwise up to a value during processing.
JP23639183A 1983-12-16 1983-12-16 Method for control of plasma device Granted JPS60128620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23639183A JPS60128620A (en) 1983-12-16 1983-12-16 Method for control of plasma device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23639183A JPS60128620A (en) 1983-12-16 1983-12-16 Method for control of plasma device

Publications (2)

Publication Number Publication Date
JPS60128620A true JPS60128620A (en) 1985-07-09
JPH0457090B2 JPH0457090B2 (en) 1992-09-10

Family

ID=17000071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23639183A Granted JPS60128620A (en) 1983-12-16 1983-12-16 Method for control of plasma device

Country Status (1)

Country Link
JP (1) JPS60128620A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373524A (en) * 1986-09-16 1988-04-04 Matsushita Electronics Corp Plasma processing
JP2010135422A (en) * 2008-12-02 2010-06-17 Tokyo Electron Ltd Plasma processing apparatus and method of operating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6373524A (en) * 1986-09-16 1988-04-04 Matsushita Electronics Corp Plasma processing
JP2010135422A (en) * 2008-12-02 2010-06-17 Tokyo Electron Ltd Plasma processing apparatus and method of operating the same

Also Published As

Publication number Publication date
JPH0457090B2 (en) 1992-09-10

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