JPH08316214A - Plasma treating device - Google Patents
Plasma treating deviceInfo
- Publication number
- JPH08316214A JPH08316214A JP7124805A JP12480595A JPH08316214A JP H08316214 A JPH08316214 A JP H08316214A JP 7124805 A JP7124805 A JP 7124805A JP 12480595 A JP12480595 A JP 12480595A JP H08316214 A JPH08316214 A JP H08316214A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- electrode
- electrodes
- processing apparatus
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 8
- 239000000523 sample Substances 0.000 description 24
- 150000002500 ions Chemical class 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000016796 Euonymus japonicus Nutrition 0.000 description 1
- 240000006570 Euonymus japonicus Species 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ドライエッチング装
置、プラズマＣＶＤ装置、スパッタリング装置等のプラ
ズマ処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus such as a dry etching apparatus, a plasma CVD apparatus and a sputtering apparatus.
【０００２】[0002]
【従来の技術】近年、半導体素子の微細化に対応して、
ドライエッチング技術においては高アスペクト比の加工
等を実現するために、またプラズマＣＶＤ技術において
は高アスペクト比の埋め込み等を実現するために、より
高真空でプラズマ処理を行なうことが求められている。2. Description of the Related Art In recent years, in response to miniaturization of semiconductor elements,
In the dry etching technique, it is required to perform plasma treatment in a higher vacuum in order to realize processing with a high aspect ratio and in the plasma CVD technique to realize filling with a high aspect ratio.
【０００３】ドライエッチング装置の場合は、高真空に
おいてプラズマを発生させると、基板表面に形成される
イオンシース中でイオンがイオン又は他の中性ガス粒子
と衝突する確率が小さくなるために、イオンの方向性が
基板に向かって揃い、エッチング異方性が高められ、高
アスペクト比の加工が可能となる。In the case of a dry etching apparatus, when a plasma is generated in a high vacuum, the probability that the ions collide with ions or other neutral gas particles in the ion sheath formed on the surface of the substrate becomes small. Direction is aligned toward the substrate, etching anisotropy is enhanced, and processing with a high aspect ratio becomes possible.
【０００４】また、プラズマＣＶＤの場合は、高真空に
おいてプラズマを発生させると、イオンによるスパッタ
リング効果によって微細パターンの埋め込みと平坦化作
用が得られ、高アスペクト比の埋め込みが可能になる。Further, in the case of plasma CVD, when plasma is generated in a high vacuum, a fine pattern can be embedded and a flattening action can be obtained due to the sputtering effect of ions, so that a high aspect ratio can be embedded.
【０００５】高真空においてプラズマを発生させること
ができるプラズマ処理装置の１つとして、リサージュ・
エレクトロン・プラズマ処理装置がある。図５に、リサ
ージュ・エレクトロン・プラズマ処理装置の構成図を示
す。As one of plasma processing apparatuses capable of generating plasma in a high vacuum, Lissajous
There is an electron plasma processing device. FIG. 5 shows a configuration diagram of the Lissajous electron plasma processing apparatus.
【０００６】図５において、真空容器１内に３つの電極
２、３、４が配置され、各電極２、３、４にはマッチン
グ回路５、６、７を介して電極用高周波電源８、９、１
０が接続されている。電極用高周波電源８、９、１０に
より電極２、３、４に印加される高周波電圧は、振幅が
ほぼ等しくかつ位相が互いに１２０°づつずらされてい
る。In FIG. 5, three electrodes 2, 3, 4 are arranged in a vacuum container 1, and high frequency power supplies 8, 9 for electrodes are provided to the electrodes 2, 3, 4 via matching circuits 5, 6, 7. 1
0 is connected. The high frequency voltages applied to the electrodes 2, 3, and 4 by the electrode high frequency power sources 8, 9, and 10 are substantially equal in amplitude and are shifted in phase from each other by 120 °.
【０００７】真空容器１内に適当なガスを導入しつつ排
気を行い、真空容器１内を適当な圧力に保ちながら、電
極用高周波電源８、９、１０により高周波電圧を電極
２、３、４に印加すると、真空容器１内にプラズマが発
生し、試料台１１に載置された基板１２に対してエッチ
ング、堆積、表面改質等のプラズマ処理を行なうことが
できる。Evacuation is carried out while introducing a suitable gas into the vacuum container 1, and while maintaining a suitable pressure inside the vacuum container 1, a high frequency power supply for electrodes 8, 9, 10 applies a high frequency voltage to the electrodes 2, 3, 4 When plasma is applied to the substrate 12, plasma is generated in the vacuum container 1, and the substrate 12 mounted on the sample table 11 can be subjected to plasma processing such as etching, deposition, and surface modification.
【０００８】このとき、図５に示すように、試料台１１
にも試料台用高周波電源１３により高周波電圧を印加す
ることで、基板１２に到達するイオンエネルギーを制御
することができる。なお、リサージュ・エレクトロン・
プラズマ処理装置については、特開平４−２１５４３０
号公報に詳しく開示されている。At this time, as shown in FIG.
Further, by applying a high frequency voltage from the high frequency power source 13 for the sample stage, the ion energy reaching the substrate 12 can be controlled. In addition, Lissajous electron
Regarding the plasma processing apparatus, Japanese Patent Application Laid-Open No. 4-215430
It is disclosed in detail in the publication.
【０００９】また、リサージュ・エレクトロン・プラズ
マ処理装置に限らず、真空容器内に３つ以上の電極を配
置し、３つ以上の電極の各々をマッチング回路を介して
電極用高周波電源と接続し、３つ以上の電極の各々に位
相が配置順に異なる高周波電源を印加してプラズマを発
生させ、真空容器内に設けた試料台に載置された基板を
処理するようにしたプラズマ処理装置には様々なタイプ
のものがある。例えばマルチ・ターゲット式のスパッタ
リング装置では３つ以上のスパッタリング・ターゲット
がそのまま電極として用いられている。Further, not limited to the Lissajous electron plasma processing apparatus, three or more electrodes are arranged in a vacuum container, and each of the three or more electrodes is connected to a high frequency power source for electrodes through a matching circuit, There are various plasma processing apparatuses that process a substrate placed on a sample table provided in a vacuum container by applying high-frequency power sources having different phases to each of three or more electrodes to generate plasma. There are various types. For example, in a multi-target type sputtering apparatus, three or more sputtering targets are used as they are as electrodes.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、図５に
示した構成のプラズマ処理装置では、各マッチング回路
５、６、７を最適な状態に制御しても、各電極２、３、
４への投入電力の１０％程度の反射電力が各高周波電源
８、９、１０に戻ってしまう。反射電力がある大きさに
達すると、電極用高周波電源８、９、１０を破損する恐
れがあるため、１０％もの反射電力が発生してしまう
と、例えば処理速度を増すために大きい電力を投入した
い場合でもできないという問題があった。However, in the plasma processing apparatus having the configuration shown in FIG. 5, even if each matching circuit 5, 6, 7 is controlled to the optimum state, each electrode 2, 3,
The reflected power of about 10% of the input power to the No. 4 returns to the high frequency power sources 8, 9 and 10. When the reflected power reaches a certain level, the high frequency power supplies for electrodes 8, 9, 10 may be damaged. Therefore, if the reflected power of 10% is generated, a large amount of power is supplied to increase the processing speed. There was a problem that I could not do it even if I wanted to.
【００１１】また、一般に高周波電源を用いるプラズマ
処理装置では、マッチング回路に設けたプローブからの
信号をマッチング回路制御装置（図５には図示せず）へ
フィードバックし、自動的にマッチング回路を最適な状
態に制御（以下、これを自動マッチングと呼ぶ）してい
るが、図５に示した方式では自動マッチングがうまく動
作せず、反射電力計の指示値を見ながら手動でマッチン
グ回路を操作しなければならないという問題点があっ
た。Further, in a plasma processing apparatus which generally uses a high frequency power supply, a signal from a probe provided in a matching circuit is fed back to a matching circuit controller (not shown in FIG. 5) to automatically optimize the matching circuit. Although it is controlled to the state (hereinafter referred to as automatic matching), the automatic matching does not work well in the method shown in FIG. 5, and the matching circuit must be manually operated while observing the reading value of the reflection power meter. There was a problem that it had to be.
【００１２】さらに、図５に示した方式のプラズマ処理
装置において、試料台１１にも試料台用高周波電源１３
により高周波電圧を印加した場合、試料台１１に高周波
電圧を印加しない場合に比べて反射電力がより大きくな
る傾向があった。Further, in the plasma processing apparatus of the system shown in FIG. 5, the sample stage 11 has a high frequency power source 13 for the sample stage.
Therefore, when the high frequency voltage was applied, the reflected power tended to be larger than when the high frequency voltage was not applied to the sample table 11.
【００１３】本発明は、上記従来の問題点に鑑み、電極
用高周波電源に戻る反射電力を減少させることができ、
自動マッチングの正常な動作を確保することができるプ
ラズマ処理装置を提供することを目的としている。In view of the above conventional problems, the present invention can reduce the reflected power returning to the electrode high frequency power source,
An object of the present invention is to provide a plasma processing apparatus capable of ensuring normal operation of automatic matching.
【００１４】[0014]
【課題を解決するための手段】本願の第１発明のプラズ
マ処理装置は、真空容器内に３つ以上の電極が配置さ
れ、各電極のそれぞれがマッチング回路を介して電極用
高周波電源と接続されており、３つ以上の電極の各々に
位相が配置順に異なる高周波電圧を印加してプラズマを
発生させ、真空容器内に設けた試料台に載置された基板
を処理するプラズマ処理装置であって、各々の電極用高
周波電源とマッチング回路との間に、遮断周波数が各電
極に印加する高周波電圧の周波数より大きいローパス・
フィルタを挿入したことを特徴とする。In the plasma processing apparatus of the first invention of the present application, three or more electrodes are arranged in a vacuum container, and each electrode is connected to a high frequency power source for electrodes through a matching circuit. A plasma processing apparatus for processing a substrate placed on a sample table provided in a vacuum container by applying high-frequency voltages having different phases to each of three or more electrodes in the order of arrangement to generate plasma. Between the high frequency power supply for each electrode and the matching circuit, a low-pass voltage whose cutoff frequency is higher than the frequency of the high frequency voltage applied to each electrode.
It is characterized by inserting a filter.
【００１５】本願の第２発明のプラズマ処理装置は、第
１発明と同様のローパス・フィルタをマッチング回路と
電極との間に挿入したことを特徴とする。The plasma processing apparatus of the second invention of the present application is characterized in that the same low-pass filter as that of the first invention is inserted between the matching circuit and the electrode.
【００１６】上記ローパス・フィルタの遮断周波数は各
電極に印加する高周波電圧の周波数の２倍より小さいこ
とが好ましく、また試料台に高周波電圧を印加する手段
を有することが好ましい。The cutoff frequency of the low-pass filter is preferably smaller than twice the frequency of the high-frequency voltage applied to each electrode, and it is preferable to have means for applying the high-frequency voltage to the sample stage.
【００１７】本願の第３発明のプラズマ処理装置は、試
料台に各電極に印加する高周波電圧よりも周波数の低い
高周波電圧を印加する手段を有し、各々の電極用高周波
電源とマッチング回路との間に、低域遮断周波数が試料
台に印加する高周波電圧の周波数より大きくかつ各電極
に印加する高周波電圧の周波数より小さく、高域遮断周
波数が各電極に印加する高周波電圧の周波数より大きい
バンドパス・フィルタを挿入したことを特徴とする。The plasma processing apparatus of the third invention of the present application has means for applying a high frequency voltage having a frequency lower than that of the high frequency voltage applied to each electrode to the sample stage, and the high frequency power supply for each electrode and the matching circuit are provided. In between, a bandpass whose low cutoff frequency is higher than the frequency of the high-frequency voltage applied to the sample stage, lower than the frequency of the high-frequency voltage applied to each electrode, and whose high cutoff frequency is higher than the frequency of the high-frequency voltage applied to each electrode. -Characterized by inserting a filter.
【００１８】本願の第４発明のプラズマ処理装置は、第
３発明と同様のバンドパス・フィルタをマッチング回路
と電極との間に挿入したことを特徴とする。The plasma processing apparatus of the fourth invention of the present application is characterized in that a bandpass filter similar to that of the third invention is inserted between the matching circuit and the electrode.
【００１９】上記バンドパス・フィルタの高域遮断周波
数は各電極に印加する高周波電圧の周波数の２倍より小
さいことが好ましい。The high cutoff frequency of the bandpass filter is preferably smaller than twice the frequency of the high frequency voltage applied to each electrode.
【００２０】[0020]
【作用】リサージュ・エレクトロン・プラズマ処理装置
等において、大きな反射電力が発生する原因は従来明ら
かでなかったが、本発明者等は反射電力波形を分析する
ことによって、反射電力は電極に印加する高周波電圧の
高調波成分が支配的であることを突き止めた。また、自
動マッチングの動作を妨げているのもこの高調波成分か
らなる反射電力波であることがわかった。In the Lissajous / Electron / Plasma processing apparatus, the cause of the large reflected power has not been clarified so far. However, the present inventors analyzed the reflected power waveform and found that the reflected power was applied to the electrode We have found that the harmonic components of the voltage are dominant. It was also found that the reflected power wave composed of this harmonic component also hinders the automatic matching operation.
【００２１】したがって、本願の第１発明によれば、各
々の電極用高周波電源とマッチング回路との間に、遮断
周波数が電極に印加する高周波電圧の周波数より大きい
ローパス・フィルタを挿入しているため、電極用高周波
電源まで戻る反射電力を減少させることができる。Therefore, according to the first invention of the present application, a low-pass filter having a cutoff frequency higher than the frequency of the high-frequency voltage applied to the electrodes is inserted between each high-frequency power source for electrodes and the matching circuit. The reflected power returning to the electrode high frequency power source can be reduced.
【００２２】また、本願の第２発明によれば、各々のマ
ッチング回路と電極との間に同様のローパス・フィルタ
を挿入しているため、電極用高周波電源まで戻る反射電
力を減少させることができると同時に、プラズマ発生条
件にもよるが、自動マッチングの正常な動作を確保する
ことができる。According to the second invention of the present application, since the same low-pass filter is inserted between each matching circuit and the electrode, the reflected power returning to the electrode high frequency power source can be reduced. At the same time, the normal operation of automatic matching can be ensured, depending on the plasma generation conditions.
【００２３】また、上記第１、第２発明において、ロー
パス・フィルタの遮断周波数を電極に印加する高周波電
圧の周波数の２倍より小さくすれば、反射電力の周波数
成分のうち最も大きい２倍調波成分を遮断することがで
きるため、反射電力の減少、及び自動マッチング動作の
正常化をより一層図ることができる。また、試料台に高
周波電圧を印加する手段を設けると、基板に到達するイ
オンエネルギーを制御することができる。In the first and second inventions, if the cutoff frequency of the low-pass filter is set to be smaller than twice the frequency of the high-frequency voltage applied to the electrodes, the double harmonic wave which is the largest among the frequency components of the reflected power. Since the components can be cut off, it is possible to further reduce the reflected power and normalize the automatic matching operation. Further, by providing a means for applying a high frequency voltage to the sample stage, the ion energy reaching the substrate can be controlled.
【００２４】また、本願の第３発明によれば、各々の電
極用高周波電源とマッチング回路との間に、低域遮断周
波数が試料台に印加する高周波電圧の周波数より大きく
かつ各電極に印加する高周波電圧の周波数より小さく、
高域遮断周波数が各電極に印加する高周波電圧の周波数
より大きいバンドパス・フィルタを挿入しているため、
基板に到達するイオンエネルギーを制御しながら電極用
高周波電源まで戻る反射電力を減少させることができ
る。Further, according to the third invention of the present application, the low cutoff frequency is higher than the frequency of the high frequency voltage applied to the sample stage and is applied to each electrode between each electrode high frequency power supply and the matching circuit. Smaller than the frequency of the high frequency voltage,
Since a bandpass filter with a high cutoff frequency higher than the frequency of the high frequency voltage applied to each electrode is inserted,
The reflected power returning to the electrode high-frequency power source can be reduced while controlling the ion energy reaching the substrate.
【００２５】また、本願の第４発明によれば、各々のマ
ッチング回路と電極との間に同様のバンドパス・フィル
タを挿入しているため、基板に到達するイオンエネルギ
ーを制御しながら電極用高周波電源まで戻る反射電力を
減少させることができると同時に、プラズマ発生条件に
もよるが、自動マッチングの正常な動作を確保すること
ができる。According to the fourth invention of the present application, since the same bandpass filter is inserted between each matching circuit and the electrode, the high frequency for the electrode is controlled while controlling the ion energy reaching the substrate. The reflected power returning to the power source can be reduced, and at the same time, the normal operation of automatic matching can be ensured, depending on the plasma generation condition.
【００２６】また、第３、第４発明においても、バンド
パス・フィルタの高域遮断周波数を電極に印加する高周
波電圧の周波数の２倍より小さくすれば、反射電力の周
波数成分のうち最も大きい２倍調波成分を遮断すること
ができるため、反射電力の減少、及び自動マッチング動
作の正常化をより一層図ることができる。Also in the third and fourth aspects of the invention, if the high cutoff frequency of the bandpass filter is set to be smaller than twice the frequency of the high frequency voltage applied to the electrodes, the largest of the two frequency components of the reflected power is obtained. Since the harmonic components can be cut off, the reflected power can be reduced and the automatic matching operation can be further normalized.
【００２７】[0027]
【実施例】以下、本発明のプラズマ処理装置を、プラズ
マＣＶＤ法によるシリコン酸化膜の形成に適用した第１
実施例について、図１を参照して説明する。EXAMPLES First, the plasma processing apparatus of the present invention was applied to the formation of a silicon oxide film by plasma CVD.
An example will be described with reference to FIG.
【００２８】本実施例のプラズマ処理装置の構成を示す
図１において、真空容器１内に３つの電極２、３、４が
配置され、各電極２、３、４にはマッチング回路５、
６、７を介して電極用高周波電源８、９、１０が接続さ
れている。電極用高周波電源８、９、１０により電極
２、３、４に印加される高周波電圧は振幅がほぼ等し
く、位相が互いに１２０°づつずらされており、その周
波数は６０ＭＨｚである。電極用高周波電源８、９、１
０とマッチング回路５、６、７との間には、遮断周波数
が６５ＭＨｚのローパスフィルタ１４、１５、１６が挿
入されている。In FIG. 1 showing the structure of the plasma processing apparatus of the present embodiment, three electrodes 2, 3, 4 are arranged in a vacuum container 1, and a matching circuit 5, is provided for each electrode 2, 3, 4.
Electrode high-frequency power sources 8, 9, 10 are connected via 6, 7. The high frequency voltages applied to the electrodes 2, 3 and 4 by the high frequency power supplies for electrodes 8, 9 and 10 have substantially the same amplitude and their phases are shifted by 120 ° from each other, and the frequency thereof is 60 MHz. High frequency power source for electrodes 8, 9, 1
Low-pass filters 14, 15 and 16 having a cutoff frequency of 65 MHz are inserted between 0 and the matching circuits 5, 6 and 7.
【００２９】真空容器１内にＳｉＨ4 ガスを１０ｓｃｃ
ｍ、Ｏ2 ガスを２０ｓｃｃｍ導入しつつ排気を行い、真
空容器１内を３０ｍＴｏｒｒに保ちながら、電極用高周
波電源８、９、１０により高周波電圧を電極２、３、４
に印加すると、真空容器１内にプラズマが発生し、試料
台１１に載置された基板１２に対してシリコン酸化膜の
堆積を行なうことができた。各電極２、３、４には高周
波電力をそれぞれ２００Ｗづつ投入し、マッチング回路
５、６、７の制御は手動で行なったが、各電極用高周波
電源８、９、１０に戻った反射電力は１Ｗ以下であっ
た。10 sccc of SiH 4 gas was introduced into the vacuum vessel 1.
m and O 2 gas were introduced at 20 sccm to evacuate, and while the vacuum container 1 was kept at 30 mTorr, a high frequency power supply for electrodes 8, 9, 10 applied a high frequency voltage to the electrodes 2, 3, 4
Then, plasma was generated in the vacuum container 1, and the silicon oxide film could be deposited on the substrate 12 mounted on the sample table 11. High-frequency power of 200 W was applied to each of the electrodes 2, 3 and 4, and the matching circuits 5, 6 and 7 were controlled manually, but the reflected power returned to the high-frequency power sources for electrodes 8, 9 and 10 was It was 1 W or less.
【００３０】比較のために、ローパス・フィルタ１４、
１５、１６を取り除いて同様の実験を行なったところ、
各電極用高周波電源に戻った反射電力は１５〜２５Ｗで
あった。For comparison, the low-pass filter 14,
After removing 15 and 16 and performing the same experiment,
The reflected power returned to the high frequency power source for each electrode was 15 to 25W.
【００３１】次に、本発明のプラズマ処理装置を、プラ
ズマＣＶＤ法によるシリコン酸化膜の形成に適用した第
２実施例について、図２を参照して説明する。なお、図
１に示した第１実施例と同一の構成要素については同一
の参照番号を付して説明は省略する。Next, a second embodiment in which the plasma processing apparatus of the present invention is applied to the formation of a silicon oxide film by the plasma CVD method will be described with reference to FIG. The same components as those of the first embodiment shown in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted.
【００３２】本実施例においては、電極用高周波電源
８、９、１０の周波数は５０ＭＨｚであり、マッチング
回路５、６、７と電極２、３、４の間に、遮断周波数が
５５ＭＨｚのローパス・フィルタ１４、１５、１６が挿
入されている。In this embodiment, the frequency of the electrode high frequency power supplies 8, 9, 10 is 50 MHz, and the cutoff frequency is 55 MHz between the matching circuits 5, 6, 7 and the electrodes 2, 3, 4. Filters 14, 15 and 16 are inserted.
【００３３】真空容器１内にＳｉＨ4 ガスを１０ｓｃｃ
ｍ、Ｏ2 ガスを２０ｓｃｃｍ導入しつつ排気を行い、真
空容器１内を３０ｍＴｏｒｒに保ちながら、電極用高周
波電源８、９、１０により高周波電圧を電極２、３、４
に印加すると、真空容器１内にプラズマが発生し、試料
台１１に載置された基板１２に対してシリコン酸化膜の
堆積を行なうことができた。各電極２、３、４には高周
波電力をそれぞれ２００Ｗづつ投入し、マッチング回路
５、６、７の制御は自動で行なったが、各電極用高周波
電源８、９、１０に戻った反射電力は１Ｗ以下であっ
た。SiH 4 gas of 10 sccc is put in the vacuum container 1.
m and O 2 gas were introduced at 20 sccm to evacuate, and while the vacuum container 1 was kept at 30 mTorr, a high frequency power supply for electrodes 8, 9, 10 applied a high frequency voltage to the electrodes 2, 3, 4
Then, plasma was generated in the vacuum container 1, and the silicon oxide film could be deposited on the substrate 12 mounted on the sample table 11. High-frequency power of 200 W was applied to each of the electrodes 2, 3 and 4, and the matching circuits 5, 6 and 7 were automatically controlled, but the reflected power returned to the high-frequency power sources 8, 9 and 10 for each electrode was It was 1 W or less.
【００３４】比較のために、ローパス・フィルタ１４、
１５、１６を取り除いて同様の実験を行なったところ、
各電極用高周波電源に戻った反射電力は１５〜２５Ｗで
あった。また、マッチング回路の制御は自動で行なうこ
とができなかった。For comparison, the low-pass filter 14,
After removing 15 and 16 and performing the same experiment,
The reflected power returned to the high frequency power source for each electrode was 15 to 25W. Moreover, the control of the matching circuit cannot be automatically performed.
【００３５】次に、本発明のプラズマ処理装置を、シリ
コン酸化膜のドライエッチングに適用した第３実施例に
ついて、図３を参照して説明する。なお、図１に示した
第１実施例と同一の構成要素については同一の参照番号
を付して説明は省略する。Next, a third embodiment in which the plasma processing apparatus of the present invention is applied to dry etching of a silicon oxide film will be described with reference to FIG. The same components as those of the first embodiment shown in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted.
【００３６】本実施例においては、試料台１１に試料台
用高周波電源１３により１３．５６ＭＨｚの高周波電圧
が印加される。電極用高周波電源８、９、１０とマッチ
ング回路５、６、７との間に、低域遮断周波数が５５Ｍ
Ｈｚで、高域遮断周波数が６５ＭＨｚであるバンドパス
・フィルタ１７、１８、１９が挿入されている。In the present embodiment, a high frequency voltage of 13.56 MHz is applied to the sample table 11 by the sample table high frequency power supply 13. The low cutoff frequency is 55 M between the electrode high frequency power supplies 8, 9 and 10 and the matching circuits 5, 6 and 7.
At Hz, the bandpass filters 17, 18, 19 with a high cutoff frequency of 65 MHz are inserted.
【００３７】真空容器１内にＣＨＦ3 ガスを３０ｓｃｃ
ｍ導入しつつ排気を行い、真空容器１内を５０ｍＴｏｒ
ｒに保ちながら、電極用高周波電源８、９、１０により
高周波電圧を電極２、３、４に印加すると、真空容器１
内にプラズマが発生し、試料台１１に載置された基板１
２上のシリコン酸化膜のエッチングを行なうことができ
た。各電極２、３、４には高周波電力をそれぞれ２００
Ｗづつ投入し、試料台１１には１５０Ｗの高周波電力を
投入し、マッチング回路５、６、７の制御は手動で行な
ったが、各電極用高周波電源８、９、１０に戻った反射
電力は１Ｗ以下であった。CHF 3 gas was added to the vacuum vessel 1 at 30 sccc.
evacuation while introducing 50 mTorr in the vacuum container 1
When a high-frequency voltage is applied to the electrodes 2, 3, 4 by the high-frequency power sources for electrodes 8, 9, 10 while maintaining r at r, the vacuum container 1
A plasma is generated inside the substrate 1 placed on the sample table 11.
The silicon oxide film on 2 could be etched. High frequency power of 200 is applied to each of the electrodes 2, 3 and 4.
Each of the high frequency powers of W, 150 W of high frequency power was supplied to the sample table 11, and the matching circuits 5, 6, 7 were controlled manually, but the reflected power returned to the high frequency power sources 8, 9, 10 for each electrode was It was 1 W or less.
【００３８】比較のために、バンドパス・フィルタ１
７、１８、１９を取り除いて同様の実験を行なったとこ
ろ、各電極用高周波電源に戻った反射電力は２０〜３０
Ｗであった。For comparison, the bandpass filter 1
When the same experiment was performed by removing 7, 18, and 19, the reflected power returned to the high frequency power source for each electrode was 20 to 30.
It was W.
【００３９】次に、本発明のプラズマ処理装置を、シリ
コン酸化膜のドライエッチングに適用した第４実施例に
ついて、図４を参照して説明する。なお、図３に示した
第３実施例と同一の構成要素については同一の参照番号
を付して説明は省略する。Next, a fourth embodiment in which the plasma processing apparatus of the present invention is applied to dry etching of a silicon oxide film will be described with reference to FIG. The same components as those in the third embodiment shown in FIG. 3 are designated by the same reference numerals and the description thereof will be omitted.
【００４０】本実施例においては、電極用高周波電源
８、９、１０の周波数は５０ＭＨｚであり、マッチング
回路５、６、７と電極２、３、４の間に、低域遮断周波
数が４５ＭＨｚで、高域遮断周波数が５５ＭＨｚのバン
ドパス・フィルタ１７、１８、１９が挿入されている。In this embodiment, the frequency of the electrode high frequency power supplies 8, 9, 10 is 50 MHz, and the low cutoff frequency is 45 MHz between the matching circuits 5, 6, 7 and the electrodes 2, 3, 4. Bandpass filters 17, 18, and 19 having a high cutoff frequency of 55 MHz are inserted.
【００４１】真空容器１内にＣＨＦ3 ガスを３０ｓｃｃ
ｍ導入しつつ排気を行い、真空容器１内を５０ｍＴｏｒ
ｒに保ちながら、電極用高周波電源８、９、１０により
高周波電圧を電極２、３、４に印加すると、真空容器１
内にプラズマが発生し、試料台１１に載置された基板１
２上のシリコン酸化膜のエッチングを行なうことができ
た。各電極２、３、４には高周波電力をそれぞれ２００
Ｗづつ投入し、試料台１１には１５０Ｗの高周波電力を
投入し、マッチング回路５、６、７の制御は自動で行な
ったが、各電極用高周波電源８、９、１０に戻った反射
電力は１Ｗ以下であった。 30 sccc of CHF 3 gas was introduced into the vacuum container 1.
evacuation while introducing 50 mTorr in the vacuum container 1
When a high-frequency voltage is applied to the electrodes 2, 3, 4 by the high-frequency power sources for electrodes 8, 9, 10 while maintaining r at r, the vacuum container 1
A plasma is generated inside the substrate 1 placed on the sample table 11.
The silicon oxide film on 2 could be etched. High frequency power of 200 is applied to each of the electrodes 2, 3 and 4.
W power was applied to each of them, and high-frequency power of 150 W was applied to the sample table 11, and the matching circuits 5, 6, and 7 were automatically controlled. It was 1 W or less.
【００４２】比較のために、バンドパス・フィルタ１
７、１８、１９を取り除いて同様の実験を行なったとこ
ろ、各電極用高周波電源に戻った反射電力は２０〜３０
Ｗであった。また、マッチング回路の制御は自動で行な
うことができなかった。For comparison, the bandpass filter 1
When the same experiment was performed by removing 7, 18, and 19, the reflected power returned to the high frequency power source for each electrode was 20 to 30.
It was W. Moreover, the control of the matching circuit cannot be automatically performed.
【００４３】上記各実施例では、プラズマＣＶＤ装置、
ドライエッチング装置に本発明を適用した例について述
べたが、本発明の適用範囲はこれに限定されるものでは
ない。例えば、スパッタリング装置、イオン注入装置、
ドーピング装置等にも適用可能である。In each of the above embodiments, the plasma CVD apparatus,
Although the example in which the present invention is applied to the dry etching apparatus has been described, the applicable range of the present invention is not limited to this. For example, sputtering equipment, ion implantation equipment,
It can also be applied to a doping apparatus or the like.
【００４４】また、上記各実施例では電極数が３つの場
合を例に挙げて説明したが、電極数が４つ以上の場合に
も同様の効果を得ることができる。In each of the above embodiments, the case where the number of electrodes is 3 has been described as an example, but the same effect can be obtained when the number of electrodes is 4 or more.
【００４５】[0045]
【発明の効果】以上の説明から明らかなように、本願の
第１発明のプラズマ処理装置によれば、電極用高周波電
源とマッチング回路との間に、遮断周波数が電極に印加
する高周波電圧の周波数より大きいローパス・フィルタ
を挿入しているため、電極用高周波電源まで戻る反射電
力を減少させることができる。As is apparent from the above description, according to the plasma processing apparatus of the first invention of the present application, the cutoff frequency is the frequency of the high frequency voltage applied to the electrodes between the high frequency power supply for electrodes and the matching circuit. Since a larger low-pass filter is inserted, the reflected power returning to the electrode high frequency power source can be reduced.
【００４６】また、本願の第２発明によれば、各々のマ
ッチング回路と電極との間に同様のローパス・フィルタ
を挿入しているため、電極用高周波電源まで戻る反射電
力を減少させることができると同時に、プラズマ発生条
件にもよるが、自動マッチングの正常な動作を確保する
ことができる。According to the second invention of the present application, since the same low-pass filter is inserted between each matching circuit and the electrode, the reflected power returning to the electrode high frequency power source can be reduced. At the same time, the normal operation of automatic matching can be ensured, depending on the plasma generation conditions.
【００４７】また、上記第１、第２発明において、ロー
パス・フィルタの遮断周波数を電極に印加する高周波電
圧の周波数の２倍より小さくすれば、反射電力の周波数
成分のうち最も大きい２倍調波成分を遮断することがで
きるため、反射電力の減少、及び自動マッチング動作の
正常化をより一層図ることができる。また、試料台に高
周波電圧を印加する手段を設けると、基板に到達するイ
オンエネルギーを制御することができる。In the first and second inventions, if the cutoff frequency of the low-pass filter is set to be smaller than twice the frequency of the high-frequency voltage applied to the electrodes, the double harmonic wave having the largest frequency component of the reflected power is obtained. Since the components can be cut off, it is possible to further reduce the reflected power and normalize the automatic matching operation. Further, by providing a means for applying a high frequency voltage to the sample stage, the ion energy reaching the substrate can be controlled.
【００４８】また、本願の第３発明によれば、各々の電
極用高周波電源とマッチング回路との間に、低域遮断周
波数が試料台に印加する高周波電圧の周波数より大きく
かつ各電極に印加する高周波電圧の周波数より小さく、
高域遮断周波数が各電極に印加する高周波電圧の周波数
より大きいバンドパス・フィルタを挿入しているため、
基板に到達するイオンエネルギーを制御しながら電極用
高周波電源まで戻る反射電力を減少させることができ
る。Further, according to the third invention of the present application, the low cutoff frequency is higher than the frequency of the high frequency voltage applied to the sample stage and is applied to each electrode between each electrode high frequency power supply and the matching circuit. Smaller than the frequency of the high frequency voltage,
Since a bandpass filter with a high cutoff frequency higher than the frequency of the high frequency voltage applied to each electrode is inserted,
The reflected power returning to the electrode high-frequency power source can be reduced while controlling the ion energy reaching the substrate.
【００４９】また、本願の第４発明によれば、各々のマ
ッチング回路と電極との間に同様のバンドパス・フィル
タを挿入しているため、基板に到達するイオンエネルギ
ーを制御しながら電極用高周波電源まで戻る反射電力を
減少させることができると同時に、プラズマ発生条件に
もよるが、自動マッチングの正常な動作を確保すること
ができる。According to the fourth invention of the present application, since the same bandpass filter is inserted between each matching circuit and the electrode, the high frequency for the electrode is controlled while controlling the ion energy reaching the substrate. The reflected power returning to the power source can be reduced, and at the same time, the normal operation of automatic matching can be ensured, depending on the plasma generation condition.
【００５０】また、第３、第４発明においても、バンド
パス・フィルタの高域遮断周波数を電極に印加する高周
波電圧の周波数の２倍より小さくすれば、反射電力の周
波数成分のうち最も大きい２倍調波成分を遮断すること
ができるため、反射電力の減少、及び自動マッチンク動
作の正常化をより一層図ることができる。Also in the third and fourth inventions, if the high cutoff frequency of the bandpass filter is set to be smaller than twice the frequency of the high frequency voltage applied to the electrodes, the largest two frequency components of the reflected power will be obtained. Since the harmonic components can be cut off, the reflected power can be reduced and the automatic matching operation can be further normalized.
【図１】本発明の第１実施例におけるプラズマ処理装置
の構成図である。FIG. 1 is a configuration diagram of a plasma processing apparatus according to a first embodiment of the present invention.
【図２】本発明の第２実施例におけるプラズマ処理装置
の構成図である。FIG. 2 is a configuration diagram of a plasma processing apparatus according to a second embodiment of the present invention.
【図３】本発明の第３実施例におけるプラズマ処理装置
の構成図である。FIG. 3 is a configuration diagram of a plasma processing apparatus in a third embodiment of the present invention.
【図４】本発明の第４実施例におけるプラズマ処理装置
の構成図である。FIG. 4 is a configuration diagram of a plasma processing apparatus in a fourth embodiment of the present invention.
【図５】従来例におけるプラズマ処理装置の構成図であ
る。FIG. 5 is a configuration diagram of a plasma processing apparatus in a conventional example.
１ 真空容器 ２、３、４ 電極 ５、６、７ マッチング回路 ８、９、１０ 電極用高周波電源 １１ 試料台 １２ 基板 １４、１５、１６ ローパス・フィルタ １７、１８、１９ バンドパス・フィルタ 1 Vacuum container 2, 3, 4 Electrodes 5, 6, 7 Matching circuit 8, 9, 10 High-frequency power source for electrode 11 Sample stage 12 Substrate 14, 15, 16 Low-pass filter 17, 18, 19 Band-pass filter
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/31 Ｈ０１Ｌ 21/31 Ｃ Ｈ０５Ｈ 1/46 9216−2Ｇ Ｈ０５Ｈ 1/46 Ａ (72)発明者 中山 一郎 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 柳 義弘 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 鈴木 正樹 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 川上 秀一 東京都新宿区高田馬場４−39−７ 高田馬 場21ビルアステック株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication location H01L 21/31 H01L 21/31 C H05H 1/46 9216-2G H05H 1/46 A (72) Invention Person Ichiro Nakayama 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Yoshihiro Yanagi 1006 Kadoma, Kadoma City Osaka Prefecture, Matsuda Electric Industrial Co., Ltd. (72) Masaki Suzuki Kadoma City, Osaka Prefecture 1006 Kadoma Matsushita Electric Industrial Co., Ltd. (72) Inventor Shuichi Kawakami 4-39-7 Takadanobaba, Shinjuku-ku, Tokyo Takadanobaba 21 Building Astec Co., Ltd.
Claims (7)
れ、各電極がそれぞれマッチング回路を介して電極用高
周波電源と接続されており、３つ以上の電極の各々に位
相が配置順に異なる高周波電圧を印加してプラズマを発
生させ、真空容器内に設けた試料台に載置された基板を
処理するプラズマ処理装置であって、各々の電極用高周
波電源とマッチング回路との間に、遮断周波数が各電極
に印加する高周波電圧の周波数より大きいローパス・フ
ィルタを挿入したことを特徴とするプラズマ処理装置。1. A vacuum container having three or more electrodes arranged therein, each of which is connected to a high frequency power source for electrodes through a matching circuit, and the phase of each of the three or more electrodes is different in arrangement order. A plasma processing apparatus that applies a high-frequency voltage to generate plasma to process a substrate placed on a sample table provided in a vacuum container, and shuts off between a high-frequency power source for each electrode and a matching circuit. A plasma processing apparatus having a low-pass filter having a frequency higher than that of a high-frequency voltage applied to each electrode.
れ、各電極がそれぞれマッチング回路を介して電極用高
周波電源と接続されており、３つ以上の電極の各々に位
相が配置順に異なる高周波電圧を印加してプラズマを発
生させ、真空容器内に設けた試料台に載置された基板を
処理するプラズマ処理装置であって、各々のマッチング
回路と電極との間に、遮断周波数が各電極に印加する高
周波電圧の周波数より大きいローパス・フィルタを挿入
したことを特徴とするプラズマ処理装置。2. A vacuum container having three or more electrodes arranged therein, each electrode being connected to a high frequency power source for electrodes through a matching circuit, and the phase of each of the three or more electrodes being different in the arrangement order. A plasma processing apparatus that applies a high-frequency voltage to generate plasma and processes a substrate placed on a sample table provided in a vacuum container, and has a cutoff frequency between each matching circuit and an electrode. A plasma processing apparatus characterized in that a low-pass filter having a frequency higher than that of a high-frequency voltage applied to the electrodes is inserted.
極に印加する高周波電圧の周波数の２倍より小さいこと
を特徴とする請求項１又は２記載のプラズマ処理装置。3. The plasma processing apparatus according to claim 1, wherein the cutoff frequency of the low-pass filter is smaller than twice the frequency of the high-frequency voltage applied to each electrode.
することを特徴とする請求項１又は２記載のプラズマ処
理装置。4. The plasma processing apparatus according to claim 1, further comprising means for applying a high frequency voltage to the sample stage.
れ、各電極がそれぞれマッチング回路を介して電極用高
周波電源と接続されており、３つ以上の電極の各々に位
相が配置順に異なる高周波電圧を印加してプラズマを発
生させ、真空容器内に設けた試料台に載置された基板を
処理するプラズマ処理装置であって、試料台に各電極に
印加する高周波電圧よりも周波数の低い高周波電圧を印
加する手段を有し、各々の電極用高周波電源とマッチン
グ回路との間に、低域遮断周波数が試料台に印加する高
周波電圧の周波数より大きくかつ各電極に印加する高周
波電圧の周波数より小さく、高域遮断周波数が各電極に
印加する高周波電圧の周波数より大きいバンドパス・フ
ィルタを挿入したことを特徴とするプラズマ処理装置。5. A vacuum container having three or more electrodes arranged therein, each electrode being connected to an electrode high frequency power source through a matching circuit, and the phase of each of the three or more electrodes being different in arrangement order. A plasma processing apparatus that applies a high-frequency voltage to generate plasma to process a substrate placed on a sample table provided in a vacuum container, and has a lower frequency than the high-frequency voltage applied to each electrode on the sample table. A means for applying a high frequency voltage is provided, and the low cutoff frequency between each electrode high frequency power supply and the matching circuit is higher than the frequency of the high frequency voltage applied to the sample stage and the frequency of the high frequency voltage applied to each electrode. A plasma processing apparatus, characterized in that a bandpass filter, which is smaller and has a high cutoff frequency higher than the frequency of a high-frequency voltage applied to each electrode, is inserted.
れ、各電極のそれぞれマッチング回路を介して電極用高
周波電源と接続されており、３つ以上の電極の各々に位
相が配置順に異なる高周波電圧を印加してプラズマを発
生させ、真空容器内に設けた試料台に載置された基板を
処理するプラズマ処理装置であって、試料台に各電極に
印加する高周波電圧よりも周波数の低い高周波電圧を印
加する手段を有し、各々のマッチング回路と電極との間
に、低域遮断周波数が試料台に印加する高周波電圧の周
波数より大きくかつ各電極に印加する高周波電圧の周波
数より小さく、高域遮断周波数が各電極に印加する高周
波電圧の周波数より大きいバンドパス・フィルタを挿入
したことを特徴とするプラズマ処理装置。6. A vacuum vessel having three or more electrodes arranged therein, each electrode being connected to a high frequency power source for electrodes through a matching circuit, and the phase of each of the three or more electrodes being different in the order of arrangement. A plasma processing apparatus that applies a high-frequency voltage to generate plasma to process a substrate placed on a sample table provided in a vacuum container, and has a lower frequency than the high-frequency voltage applied to each electrode on the sample table. Having a means for applying a high frequency voltage, between each matching circuit and the electrode, the low cutoff frequency is higher than the frequency of the high frequency voltage applied to the sample stage and smaller than the frequency of the high frequency voltage applied to each electrode, A plasma processing apparatus, wherein a bandpass filter having a high cutoff frequency higher than the frequency of a high frequency voltage applied to each electrode is inserted.
が各電極に印加する高周波電圧の周波数の２倍より小さ
いことを特徴とする請求項５又は６記載のプラズマ処理
装置。7. The plasma processing apparatus according to claim 5, wherein the high cutoff frequency of the bandpass filter is smaller than twice the frequency of the high frequency voltage applied to each electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7124805A JPH08316214A (en) | 1995-05-24 | 1995-05-24 | Plasma treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7124805A JPH08316214A (en) | 1995-05-24 | 1995-05-24 | Plasma treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08316214A true JPH08316214A (en) | 1996-11-29 |
Family
ID=14894567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7124805A Pending JPH08316214A (en) | 1995-05-24 | 1995-05-24 | Plasma treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08316214A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004031440A1 (en) * | 2002-09-30 | 2004-04-15 | Toppan Printing Co., Ltd. | Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process |
| KR100500432B1 (en) * | 2002-09-26 | 2005-07-14 | 주식회사 피에스엠 | Atmospheric plasma apparatus using radical self-flow electrode structure |
| KR100549503B1 (en) * | 2002-11-20 | 2006-02-09 | 재단법인서울대학교산학협력재단 | Surface treatment device of radioactive waste using atmospheric pressure plasma |
| JP2010182683A (en) * | 2002-05-20 | 2010-08-19 | Mks Instruments Inc | Method and apparatus for vhf plasma processing with load mismatch reliability and stability |
| JP2012502181A (en) * | 2008-09-03 | 2012-01-26 | ダウ コーニング コーポレーション | Low pressure radio frequency pulsed plasma reactor for the production of nanoparticles |
-
1995
- 1995-05-24 JP JP7124805A patent/JPH08316214A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010182683A (en) * | 2002-05-20 | 2010-08-19 | Mks Instruments Inc | Method and apparatus for vhf plasma processing with load mismatch reliability and stability |
| KR100500432B1 (en) * | 2002-09-26 | 2005-07-14 | 주식회사 피에스엠 | Atmospheric plasma apparatus using radical self-flow electrode structure |
| WO2004031440A1 (en) * | 2002-09-30 | 2004-04-15 | Toppan Printing Co., Ltd. | Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process |
| EP1548149A1 (en) * | 2002-09-30 | 2005-06-29 | Toppan Printing Co., Ltd. | Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process |
| EP1548149A4 (en) * | 2002-09-30 | 2011-04-13 | Toppan Printing Co Ltd | Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process |
| US8062716B2 (en) | 2002-09-30 | 2011-11-22 | Toppan Printing Co., Ltd. | Method for forming thin film, apparatus for forming thin film, and method for monitoring thin film forming process |
| KR100549503B1 (en) * | 2002-11-20 | 2006-02-09 | 재단법인서울대학교산학협력재단 | Surface treatment device of radioactive waste using atmospheric pressure plasma |
| JP2012502181A (en) * | 2008-09-03 | 2012-01-26 | ダウ コーニング コーポレーション | Low pressure radio frequency pulsed plasma reactor for the production of nanoparticles |
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