JPS60124825A - 薄膜デバイスの平担化方法 - Google Patents
薄膜デバイスの平担化方法Info
- Publication number
- JPS60124825A JPS60124825A JP23149783A JP23149783A JPS60124825A JP S60124825 A JPS60124825 A JP S60124825A JP 23149783 A JP23149783 A JP 23149783A JP 23149783 A JP23149783 A JP 23149783A JP S60124825 A JPS60124825 A JP S60124825A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film device
- particles
- planarization
- flattening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23149783A JPS60124825A (ja) | 1983-12-09 | 1983-12-09 | 薄膜デバイスの平担化方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23149783A JPS60124825A (ja) | 1983-12-09 | 1983-12-09 | 薄膜デバイスの平担化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60124825A true JPS60124825A (ja) | 1985-07-03 |
JPH0562459B2 JPH0562459B2 (enrdf_load_stackoverflow) | 1993-09-08 |
Family
ID=16924413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23149783A Granted JPS60124825A (ja) | 1983-12-09 | 1983-12-09 | 薄膜デバイスの平担化方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60124825A (enrdf_load_stackoverflow) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5882536A (ja) * | 1981-11-10 | 1983-05-18 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1983
- 1983-12-09 JP JP23149783A patent/JPS60124825A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5882536A (ja) * | 1981-11-10 | 1983-05-18 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0562459B2 (enrdf_load_stackoverflow) | 1993-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0529321B1 (en) | Metallic material deposition method for integrated circuit manufacturing | |
US5330628A (en) | Collimated deposition apparatus and method | |
EP0202572B1 (en) | Method for forming a planarized aluminium thin film | |
JPS63152146A (ja) | 層形成物質の付着および平坦化方法ならびにその装置 | |
JP2004107688A (ja) | バイアススパッタ成膜方法及びバイアススパッタ成膜装置 | |
US8419911B2 (en) | Deposition method by physical vapor deposition and target for deposition processing by physical vapor deposition | |
US4662985A (en) | Method of smoothing out an irregular surface of an electronic device | |
JPH05110206A (ja) | 半導体発光素子の製造方法及びその製造装置 | |
JPS60124825A (ja) | 薄膜デバイスの平担化方法 | |
CN100519827C (zh) | 衬底上薄膜的制作方法 | |
JPH0931637A (ja) | 小型スパッタリングターゲット及びそれを用いた低圧スパッタリング装置 | |
JPH01270321A (ja) | スパッタリング装置 | |
US20030087033A1 (en) | Systems and methods for an angle limiting deposition mask | |
JPH0151814B2 (enrdf_load_stackoverflow) | ||
JP3979745B2 (ja) | 成膜装置、薄膜形成方法 | |
JPS5916973A (ja) | 多層光学膜の形成方法 | |
JPH05166235A (ja) | 光磁気記録媒体製造装置 | |
JPH05166236A (ja) | 光磁気記録媒体製造装置 | |
JPH0794412A (ja) | 薄膜形成装置 | |
JPS61222010A (ja) | 平坦化方法 | |
JP2790654B2 (ja) | プラスチックレンズ基板への二酸化チタン膜の形成方法 | |
JPS6229133A (ja) | スパツタ方法およびその装置 | |
JPH0559985B2 (enrdf_load_stackoverflow) | ||
JPH09241842A (ja) | スパッタリング方法 | |
JPH03188267A (ja) | 薄膜の平坦化方法と装置 |