JPS60121795A - 多層配線板の製造方法 - Google Patents
多層配線板の製造方法Info
- Publication number
- JPS60121795A JPS60121795A JP22920583A JP22920583A JPS60121795A JP S60121795 A JPS60121795 A JP S60121795A JP 22920583 A JP22920583 A JP 22920583A JP 22920583 A JP22920583 A JP 22920583A JP S60121795 A JPS60121795 A JP S60121795A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- layer
- insulating layer
- conductive wiring
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 7
- 229920006268 silicone film Polymers 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 70
- 239000010408 film Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- -1 silanol compound Chemical class 0.000 description 3
- 239000004447 silicone coating Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000001283 organosilanols Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22920583A JPS60121795A (ja) | 1983-12-06 | 1983-12-06 | 多層配線板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22920583A JPS60121795A (ja) | 1983-12-06 | 1983-12-06 | 多層配線板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60121795A true JPS60121795A (ja) | 1985-06-29 |
| JPH0534839B2 JPH0534839B2 (enrdf_load_stackoverflow) | 1993-05-25 |
Family
ID=16888461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22920583A Granted JPS60121795A (ja) | 1983-12-06 | 1983-12-06 | 多層配線板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60121795A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250656A (ja) * | 1986-04-23 | 1987-10-31 | Nec Corp | 半導体装置の製造方法 |
| CN111093335A (zh) * | 2019-12-20 | 2020-05-01 | 京东方科技集团股份有限公司 | 电子设备、电路板及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133575A (en) * | 1974-09-17 | 1976-03-22 | Nippon Telegraph & Telephone | Tasohaisenkozo |
| JPS5892239A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS5893328A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | 絶縁層の平担化方法 |
| JPS5895839A (ja) * | 1981-12-01 | 1983-06-07 | Nec Corp | 半導体装置の製造方法 |
-
1983
- 1983-12-06 JP JP22920583A patent/JPS60121795A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5133575A (en) * | 1974-09-17 | 1976-03-22 | Nippon Telegraph & Telephone | Tasohaisenkozo |
| JPS5892239A (ja) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS5893328A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | 絶縁層の平担化方法 |
| JPS5895839A (ja) * | 1981-12-01 | 1983-06-07 | Nec Corp | 半導体装置の製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250656A (ja) * | 1986-04-23 | 1987-10-31 | Nec Corp | 半導体装置の製造方法 |
| CN111093335A (zh) * | 2019-12-20 | 2020-05-01 | 京东方科技集团股份有限公司 | 电子设备、电路板及其制备方法 |
| CN111093335B (zh) * | 2019-12-20 | 2022-03-01 | 京东方科技集团股份有限公司 | 电子设备、电路板及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0534839B2 (enrdf_load_stackoverflow) | 1993-05-25 |
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