JPS60119126A - Driving circuit of field effect transistor - Google Patents

Driving circuit of field effect transistor

Info

Publication number
JPS60119126A
JPS60119126A JP58227938A JP22793883A JPS60119126A JP S60119126 A JPS60119126 A JP S60119126A JP 58227938 A JP58227938 A JP 58227938A JP 22793883 A JP22793883 A JP 22793883A JP S60119126 A JPS60119126 A JP S60119126A
Authority
JP
Japan
Prior art keywords
transistor
diode
gate
output
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58227938A
Other languages
Japanese (ja)
Inventor
Kazuyuki Tomii
富井　和志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP58227938A priority Critical patent/JPS60119126A/en
Publication of JPS60119126A publication Critical patent/JPS60119126A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To shorten the OFF time of an output TR by discharging charge applied at the ON of the output TR through an FET connected between the source and drain of the output TR in parallel. CONSTITUTION:A photovoltatic element 1 and a normally off MOSTR4 in which the threshold of the gate is lower than that of the FET type output TR2 are arranged in parallel between the gate and source of the output TR2 and a diode 5 is arranged between the gate and source of the TR4. The charged capacity of the TR4 is lower than that of the TR2. Discharged current obtained at the OFF of the TR2 flows into the diode 1 at first, but positive voltage is applied to the gate of the TR4 by a diode 5, the TR4 is turned to the connected status and the charge of the TR2 is discharged through the TR4. The time from the start of the discharge of the TR2 to the ON of the TR4 is shortened on the basis of the relation of said threshold voltages and the charge of the TR2 is discharged through the diode 1 and the TR4.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は光信号をダイオード・フォトトランジスタ、等
の光起電力素子で電力信号に変換し、その電力信号によ
って電界効果型トランジスタを駆動する電子回路に関す
るものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to an electronic circuit that converts an optical signal into a power signal using a photovoltaic element such as a diode or phototransistor, and drives a field-effect transistor using the power signal. It is.

〔背景技術〕[Background technology]

光起電力素子を用いた電界効果型トランジスタの駆動回
路の一例を第１図−こ示す。この回路において、光起電
力素子（１１であるダイオード（１）に光が照射される
とダイオード（１）の両端に起電圧が発生し、回路を通
じてＭＯ８型トランジスタ（２）のゲート端子（３）間
の電位差を引き忘こす。エンハンスメント型のＭＯＳ型
のトランジスタであれば、ゲートに一定以上の電圧がか
かるとこの時出力端子（３）間は導通の状態となる。次
に、光が照射されなくなれば、ダイオード（１）の光起
電力は発生しなくなり、ゲート端子（３）間に蓄積され
ていた電荷はダイオード（１）を通じて放電される。放
電によってゲート電圧が一定以下になると出力端子（３
）間はしゃ断状態となる。An example of a drive circuit for a field effect transistor using a photovoltaic element is shown in FIG. In this circuit, when a diode (1), which is a photovoltaic element (11), is irradiated with light, an electromotive voltage is generated across the diode (1), which passes through the circuit to the gate terminal (3) of an MO8 type transistor (2). If the transistor is an enhancement type MOS transistor, when a voltage above a certain level is applied to the gate, the output terminal (3) becomes conductive.Next, when light is irradiated, When it disappears, the photovoltaic force of the diode (1) is no longer generated, and the charge accumulated between the gate terminal (3) is discharged through the diode (1).When the gate voltage becomes below a certain level due to discharge, the output terminal ( 3
) is in a cut-off state.

しゃ断状態のとき、光を照射してから導通状態になるま
での時間をオン時間と呼び、導電状態から光を消してし
ゃ断状態に至るまでの時間をオフ時間と呼ぶ。When in the cut-off state, the time from irradiation with light until the state becomes conductive is called the on time, and the time from the conductive state until the light is turned off and the state is cut off is called the off time.

オン時間はダイオード（１）を流れる光電流、ゲートの
容量及び第１図には示してないが必要に応じて組込まれ
る回路の抵抗成分等が要因となってきめられる。The on-time is determined by factors such as the photocurrent flowing through the diode (1), the capacitance of the gate, and the resistance component of a circuit (not shown in FIG. 1) that is incorporated as necessary.

オフ時間はゲート端子（３）間の電圧と、ダイオード（
１）の抵抗、その他抵抗成分等が要因となっている。と
ころで、良く知られているように、夕゛イオード（１）
は指数関係的な電流・電圧特性を示し、一定の電圧（一
般的には０．５〜０．７　Ｖ　）以下では、それ以上の
部分と比べて著しく高抵抗となる。ゲートに蓄積された
電荷がダイオード（１）を通じて放電されるζき、タイ
オード（１）は前述の高抵抗部分の特性となる。単純な
抵抗コンデンサー回路（ＲＣ回路）からも知られている
ように、抵抗ｋが大きいはど時定数が大きくなり、オフ
時間は長くなる。したがってこの回路では、オフ時間が
オン時間に比べて著しく長いという点が実用上の問題と
なっている。The off time is determined by the voltage between the gate terminal (3) and the diode (
The resistance in 1) and other resistance components are factors. By the way, as is well known, the evening iode (1)
shows an exponential current/voltage characteristic, and below a certain voltage (generally 0.5 to 0.7 V), the resistance becomes significantly higher than that at a voltage above that. When the charge accumulated in the gate is discharged through the diode (1), the diode (1) has the characteristics of the high resistance portion described above. As is known from a simple resistive capacitor circuit (RC circuit), the larger the resistance k, the larger the time constant and the longer the off time. Therefore, this circuit has a practical problem in that the off time is significantly longer than the on time.

オフ時間を短かくするためには第２図のように回路にダ
イオード（１）と並列に抵抗（４）を入れる方法がある
。オフの際は、ダイオード（１）と抵抗（４）の並列抵
抗で放電がおこなわれるため、第１図の回路の場合より
オフ時間が短（なることが期待される。ところがこの回
路では、オンのときもこの抵抗（４）を通じて電流が流
れるため、オン時間は長くなる。その上、ＭＯ８型トラ
ンジスタ（２）のゲートにかかる電圧は、ダイオードの
開放電圧よりは低い、抵抗（４）の両端の電圧となると
いう欠点がある。In order to shorten the off time, there is a method of inserting a resistor (4) in parallel with the diode (1) in the circuit as shown in Figure 2. When the circuit is off, the discharge occurs through the parallel resistance of the diode (1) and the resistor (4), so it is expected that the off time will be shorter than in the case of the circuit shown in Figure 1.However, in this circuit, when the on Since current flows through this resistor (4) even when The disadvantage is that the voltage is

〔発明の目的〕[Purpose of the invention]

そこで、本発明は、光起電力素子を用いた電界効果型の
トランジスタの駆動回路に３いて、オフ時間を短縮する
電界効果型トランジスタの駆動回路を提供することを目
的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a drive circuit for a field effect transistor using a photovoltaic element, which shortens the off time.

〔発明の開示〕[Disclosure of the invention]

上記目的を達成するために、本発明にかかる電界効果型
のトランジスタの駆動回路は、電界効果型の出力トラン
ジスタ（２）のゲート、ソース間に光起電力素子（１）
をアノードをゲートに対応させて配置すると共にゲート
のしきいち電圧が出力トランジスタ（２）のそれより低
いノーマリ−オフのＭＯＳ型のトランジスタ（４）を並
列に配し、該”トランジスタ（４）のゲート・ソース間
にダイオード（５）を配し、ダイオード（５）のカソー
ドに光起電力素子（１）のカソードを接続して成ること
を特徴とするものである。In order to achieve the above object, a field effect transistor drive circuit according to the present invention includes a photovoltaic element (1) between the gate and source of a field effect output transistor (2).
A normally-off MOS transistor (4) whose gate has a threshold voltage lower than that of the output transistor (2) is arranged in parallel, and the anode of the transistor (4) is arranged so as to correspond to the gate. It is characterized in that a diode (5) is arranged between the gate and the source, and the cathode of the photovoltaic element (1) is connected to the cathode of the diode (5).

以下この発明による電界効果型のトランジスタの駆動回
路を第３図乃至第５図に示す一実施例に基づいて説明す
る。Hereinafter, a driving circuit for a field effect transistor according to the present invention will be explained based on an embodiment shown in FIGS. 3 to 5. FIG.

この実施例においては出力トランジスタ（４）としてエ
ンハンスメント型のＭＯ８型トランジスタを用いている
。光起電力素子（１）としてはダイオードを使用してい
る。In this embodiment, an enhancement type MO8 type transistor is used as the output transistor (4). A diode is used as the photovoltaic element (1).

トランジスタ（４）は充電される電荷の容量が出力トラ
ンジスタ（２）のそれに比して十分小さいものであると
共にそのゲートのしきいち電圧が出力トランジスタ（２
）より低いものである。The capacity of the charged charge of the transistor (4) is sufficiently smaller than that of the output transistor (2), and the threshold voltage of its gate is lower than that of the output transistor (2).
) is lower.

次にこの電界効果型のトランジスタの駆動回路の動作状
態を説明する。Next, the operating state of the drive circuit for this field effect transistor will be explained.

ｔｆ出力トランジスタ（２）がオンとなる場合を説明す
る。この場合出力トランジスタ（２）及びトランジスタ
（４）はこの場合の第３図の等価回路として第４図に示
す如くコンデンサー（２１、（４１として働く。A case where the tf output transistor (2) is turned on will be explained. In this case, the output transistor (2) and transistor (4) function as capacitors (21, (41) as shown in FIG. 4 as an equivalent circuit of FIG. 3 in this case.

光が光起電力素子（１）に照射されるとこれに光起電力
が生じ、出力トランジスタ（２）に正電圧が加わり該出
力トランジスタ（２）はオンする。When the photovoltaic element (1) is irradiated with light, a photovoltaic force is generated, a positive voltage is applied to the output transistor (2), and the output transistor (2) is turned on.

一方トランジスタＧ４）のゲートには負電圧しか加わら
ないのでドレインとソース間はしゃ断されている。而し
てコンデンサーとして働くので出力トランジスタ（２）
及びトランジスタ（４）はすみやかに充電される。この
ときトランジスタ（４）の容量は出力トランジスタ（２
）の容量に比して十分小さくなっていて充電完了速度が
早いので、出力トランジスタ（２の充電時間はトランジ
スタ（４）がない場合とほとんどかわらず、トランジス
タθ）を用いたためオンとなる動作時間が８そくなるこ
とはない。On the other hand, since only a negative voltage is applied to the gate of transistor G4), the drain and source are cut off. Since it works as a capacitor, the output transistor (2)
and transistor (4) are quickly charged. At this time, the capacitance of the transistor (4) is the output transistor (2
) is sufficiently small compared to the capacity of the output transistor (4), and the charging completion speed is fast, so the charging time for the output transistor (2) is almost the same as when there is no transistor (4), and since the transistor θ is used, the operation time when it is turned on is never gets old.

次に出力トランジスタ（２）がオフとなる場合を説明す
る。この場合：８３図の回路は第５図に示す等価回路と
して働き出力トランジスタ（２）のみがコンデンサーと
して働く。Next, a case where the output transistor (2) is turned off will be explained. In this case: The circuit shown in Figure 83 works as the equivalent circuit shown in Figure 5, and only the output transistor (2) works as a capacitor.

光をしゃ断するとトランジスタ（４）に貯えられた容量
の放電が始まる。When the light is cut off, the capacitance stored in the transistor (4) begins to discharge.

最初トランジスタ（４）はしゃ断状態であるので放電電
流はダイオード（１）を通じて流れるが、ダイオ７ド（
５）があるためトランジスタ（４）のゲートに正電圧か
加わる。これによってトランジスタ（４）は導電状態と
なりコンデンサーとして働く出力トランジスタ（２）の
充電されている電荷はトランジスタ（４）を通じて放電
される。Initially, transistor (4) is in a cut-off state, so the discharge current flows through diode (1), but diode 7 (
5), a positive voltage is applied to the gate of the transistor (4). As a result, the transistor (4) becomes conductive, and the electric charge stored in the output transistor (2), which acts as a capacitor, is discharged through the transistor (4).

トランジスタ（４）のしきい値電圧は出力トランジスタ
（２）のそれより低いので出力トランジスタ（２）が放
電し始めてからトランジスタ（４）がオン状態になるま
での時間は短縮され、出力トランジスタ（２）がオフと
なるまでの時間は、出力トランジスタ（２）に充電され
ていた電荷がダイオード（１）のみでなくトランジスタ
（４）を通じてすみやかに放電されることよりそれだけ
短縮されるのである。Since the threshold voltage of the transistor (4) is lower than that of the output transistor (2), the time from when the output transistor (2) starts discharging until the transistor (4) turns on is shortened, and the threshold voltage of the output transistor (2) is lower than that of the output transistor (2). ) is turned off because the electric charge stored in the output transistor (2) is quickly discharged not only through the diode (1) but also through the transistor (4), which reduces the time required for the output transistor (2) to turn off.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明による電界効果型のトランジスタ
の駆動回路によれば、出力トランジスタをオンさせると
きに充電される電荷をこの出力トランジスタのソース、
ドレイン間に並列に接続する電界効果型のトランジスタ
を使用して放電することができるので従来の如く光起電
力素子としてのダイオードのみより放電する場合にくら
べてはるかに早く放電させることができ、出力トランジ
スタをオフさせるのが迅速なのである。As described above, according to the field-effect transistor drive circuit according to the present invention, the charge charged when the output transistor is turned on is transferred to the source of the output transistor.
Since it is possible to discharge using a field effect transistor connected in parallel between the drains, it is possible to discharge much faster than when discharging only from a diode as a photovoltaic element, as in the past, and the output It is quick to turn off the transistor.

４４、図面の簡単な説明 第１図及び第２図は各々背景技術を説明する電気回路、
第６図乃至第５図はこの発明の一実施例を示す電気回路
である。44. Brief description of the drawings Figures 1 and 2 each illustrate an electric circuit explaining the background art;
6 to 5 are electrical circuits showing one embodiment of the present invention.

特許出願人 松下電工株式会社 代理人弁理士　竹　元　敏　丸 （ばか２名）patent applicant Matsushita Electric Works Co., Ltd. Representative Patent Attorney Toshimaru Takemoto (2 idiots)

Claims (1)

【特許請求の範囲】[Claims] （１）電界効果型の出力トランジろ夕（２）のゲート、
ソース間に光起電力素子（１）をアノードをゲートに対
応させて配置すると共にゲートのしきいち電圧が出力ト
ランジスタ３）のそれより低いノーマリ−オフのＭＯＳ
型のトランジスタ（４）を並列に配し、該トランジスタ
（４）のゲート・ソース間にダイオード（５）を配し、
ダイオード（５）のカソードに光起電力素子（１）のカ
ソードを接続して成ることを特徴とする電可効果型のト
ランジスタの駆動回路。(1) Field-effect output transistor filter (2) gate;
A normally-off MOS in which a photovoltaic element (1) is arranged between the sources so that the anode corresponds to the gate, and the threshold voltage of the gate is lower than that of the output transistor 3).
type transistors (4) are arranged in parallel, and a diode (5) is arranged between the gate and source of the transistors (4),
A drive circuit for an electro-effect transistor, characterized in that the cathode of a photovoltaic element (1) is connected to the cathode of a diode (5).
JP58227938A 1983-11-30 1983-11-30 Driving circuit of field effect transistor Pending JPS60119126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58227938A JPS60119126A (en) 1983-11-30 1983-11-30 Driving circuit of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58227938A JPS60119126A (en) 1983-11-30 1983-11-30 Driving circuit of field effect transistor

Publications (1)

Publication Number Publication Date
JPS60119126A true JPS60119126A (en) 1985-06-26

Family

ID=16868633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58227938A Pending JPS60119126A (en) 1983-11-30 1983-11-30 Driving circuit of field effect transistor

Country Status (1)

Country Link
JP (1) JPS60119126A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2602620A1 (en) * 1986-08-11 1988-02-12 Matsushita Electric Works Ltd SEMICONDUCTOR SWITCHING CIRCUIT
JP2008122852A (en) * 2006-11-15 2008-05-29 Yamaha Corp Annunciator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2602620A1 (en) * 1986-08-11 1988-02-12 Matsushita Electric Works Ltd SEMICONDUCTOR SWITCHING CIRCUIT
JP2008122852A (en) * 2006-11-15 2008-05-29 Yamaha Corp Annunciator

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