JPS60118687A - 無機化合物単結晶の成長方法 - Google Patents
無機化合物単結晶の成長方法Info
- Publication number
- JPS60118687A JPS60118687A JP22377283A JP22377283A JPS60118687A JP S60118687 A JPS60118687 A JP S60118687A JP 22377283 A JP22377283 A JP 22377283A JP 22377283 A JP22377283 A JP 22377283A JP S60118687 A JPS60118687 A JP S60118687A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- boat
- growth
- electric furnace
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22377283A JPS60118687A (ja) | 1983-11-28 | 1983-11-28 | 無機化合物単結晶の成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22377283A JPS60118687A (ja) | 1983-11-28 | 1983-11-28 | 無機化合物単結晶の成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60118687A true JPS60118687A (ja) | 1985-06-26 |
JPH059397B2 JPH059397B2 (enrdf_load_stackoverflow) | 1993-02-04 |
Family
ID=16803464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22377283A Granted JPS60118687A (ja) | 1983-11-28 | 1983-11-28 | 無機化合物単結晶の成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60118687A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219632A (en) * | 1988-02-24 | 1993-06-15 | Haruhito Shimakura | Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals |
-
1983
- 1983-11-28 JP JP22377283A patent/JPS60118687A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219632A (en) * | 1988-02-24 | 1993-06-15 | Haruhito Shimakura | Compound semiconductor single crystals and the method for making the crystals, and semiconductor devices employing the crystals |
Also Published As
Publication number | Publication date |
---|---|
JPH059397B2 (enrdf_load_stackoverflow) | 1993-02-04 |
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