JPH0329759B2 - - Google Patents

Info

Publication number
JPH0329759B2
JPH0329759B2 JP56212692A JP21269281A JPH0329759B2 JP H0329759 B2 JPH0329759 B2 JP H0329759B2 JP 56212692 A JP56212692 A JP 56212692A JP 21269281 A JP21269281 A JP 21269281A JP H0329759 B2 JPH0329759 B2 JP H0329759B2
Authority
JP
Japan
Prior art keywords
boat
single crystal
growth
wafer
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56212692A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58115100A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP21269281A priority Critical patent/JPS58115100A/ja
Publication of JPS58115100A publication Critical patent/JPS58115100A/ja
Publication of JPH0329759B2 publication Critical patent/JPH0329759B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21269281A 1981-12-28 1981-12-28 無機化合物単結晶の製造方法 Granted JPS58115100A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21269281A JPS58115100A (ja) 1981-12-28 1981-12-28 無機化合物単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21269281A JPS58115100A (ja) 1981-12-28 1981-12-28 無機化合物単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58115100A JPS58115100A (ja) 1983-07-08
JPH0329759B2 true JPH0329759B2 (enrdf_load_stackoverflow) 1991-04-25

Family

ID=16626842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21269281A Granted JPS58115100A (ja) 1981-12-28 1981-12-28 無機化合物単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58115100A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5334457A (en) * 1976-09-13 1978-03-31 Toshiba Corp Manufacture for face plate
JPS54141388A (en) * 1978-04-25 1979-11-02 Hitachi Cable Ltd Production of compound semiconductor single crystal
JPS5938187B2 (ja) * 1981-01-30 1984-09-14 日立電線株式会社 ３−５族化合物半導体単結晶の製造方法

Also Published As

Publication number Publication date
JPS58115100A (ja) 1983-07-08

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