JPS60117616A - 液相エピタキシヤル成長方法 - Google Patents

液相エピタキシヤル成長方法

Info

Publication number
JPS60117616A
JPS60117616A JP22560183A JP22560183A JPS60117616A JP S60117616 A JPS60117616 A JP S60117616A JP 22560183 A JP22560183 A JP 22560183A JP 22560183 A JP22560183 A JP 22560183A JP S60117616 A JPS60117616 A JP S60117616A
Authority
JP
Japan
Prior art keywords
growth
liquid phase
phase epitaxial
substrate
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22560183A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0210568B2 (enrdf_load_stackoverflow
Inventor
Saburo Nakai
中井　三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22560183A priority Critical patent/JPS60117616A/ja
Publication of JPS60117616A publication Critical patent/JPS60117616A/ja
Publication of JPH0210568B2 publication Critical patent/JPH0210568B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP22560183A 1983-11-30 1983-11-30 液相エピタキシヤル成長方法 Granted JPS60117616A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22560183A JPS60117616A (ja) 1983-11-30 1983-11-30 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22560183A JPS60117616A (ja) 1983-11-30 1983-11-30 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS60117616A true JPS60117616A (ja) 1985-06-25
JPH0210568B2 JPH0210568B2 (enrdf_load_stackoverflow) 1990-03-08

Family

ID=16831879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22560183A Granted JPS60117616A (ja) 1983-11-30 1983-11-30 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS60117616A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111214A (en) * 1980-02-07 1981-09-02 Nippon Telegr & Teleph Corp <Ntt> Carbon slider boat apparatus for liquid phase epitaxial growth
JPS58168571U (ja) * 1982-04-30 1983-11-10 日本電気株式会社 液相エピタキシヤル成長用装置
JPS5991729U (ja) * 1982-12-13 1984-06-21 日本電信電話株式会社 液相エピタキシヤル成長装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111214A (en) * 1980-02-07 1981-09-02 Nippon Telegr & Teleph Corp <Ntt> Carbon slider boat apparatus for liquid phase epitaxial growth
JPS58168571U (ja) * 1982-04-30 1983-11-10 日本電気株式会社 液相エピタキシヤル成長用装置
JPS5991729U (ja) * 1982-12-13 1984-06-21 日本電信電話株式会社 液相エピタキシヤル成長装置

Also Published As

Publication number Publication date
JPH0210568B2 (enrdf_load_stackoverflow) 1990-03-08

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