JPS60108394A - 単結晶層製造方法 - Google Patents
単結晶層製造方法Info
- Publication number
- JPS60108394A JPS60108394A JP21243983A JP21243983A JPS60108394A JP S60108394 A JPS60108394 A JP S60108394A JP 21243983 A JP21243983 A JP 21243983A JP 21243983 A JP21243983 A JP 21243983A JP S60108394 A JPS60108394 A JP S60108394A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- layers
- single crystal
- thin layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 238000004857 zone melting Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 83
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000005855 radiation Effects 0.000 abstract description 12
- 239000011247 coating layer Substances 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21243983A JPS60108394A (ja) | 1983-11-14 | 1983-11-14 | 単結晶層製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21243983A JPS60108394A (ja) | 1983-11-14 | 1983-11-14 | 単結晶層製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60108394A true JPS60108394A (ja) | 1985-06-13 |
| JPS6339553B2 JPS6339553B2 (enrdf_load_stackoverflow) | 1988-08-05 |
Family
ID=16622621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21243983A Granted JPS60108394A (ja) | 1983-11-14 | 1983-11-14 | 単結晶層製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60108394A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS541613A (en) * | 1977-06-06 | 1979-01-08 | Fuji Photo Film Co Ltd | Electromagnetic radiation sensitive recording material |
-
1983
- 1983-11-14 JP JP21243983A patent/JPS60108394A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS541613A (en) * | 1977-06-06 | 1979-01-08 | Fuji Photo Film Co Ltd | Electromagnetic radiation sensitive recording material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339553B2 (enrdf_load_stackoverflow) | 1988-08-05 |
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