JPS6010740A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6010740A JPS6010740A JP11908783A JP11908783A JPS6010740A JP S6010740 A JPS6010740 A JP S6010740A JP 11908783 A JP11908783 A JP 11908783A JP 11908783 A JP11908783 A JP 11908783A JP S6010740 A JPS6010740 A JP S6010740A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- wiring
- resistors
- pattern
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(1)発明の技術分野
本発明は半導体装置に係り、特にアルミニウム等の配線
のパターンずれの検出手段に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a semiconductor device, and particularly to means for detecting pattern deviation of wiring made of aluminum or the like.
(2)技術の背景
各種電子装置の小型・軽量化、さらには低価格、信頼性
、性能の向上を目的として回路の集積化が行なわれてき
たが、最近ではその集積度も著しく増加している。回路
の高集積化に伴い単位面積あたりの素子数が増加し、回
路パターンも微細化の一途をたどっている。従って、こ
の微細回路パターンを形成するにあたり、高精度の製造
技術すなわち微細加工技術が要求されている。さらに、
単なる微細加工技術の向上だけでなく、その加工精度に
対する要求も著しく高まっているのが現状である。(2) Background of the technology Circuits have been integrated with the aim of reducing the size and weight of various electronic devices, as well as improving their cost, reliability, and performance.Recently, the degree of integration has increased significantly. There is. As circuits become more highly integrated, the number of elements per unit area increases, and circuit patterns continue to become smaller. Therefore, in forming this fine circuit pattern, highly accurate manufacturing technology, that is, microfabrication technology is required. moreover,
The current situation is that not only the improvement of microfabrication technology but also the demand for its machining accuracy has increased significantly.
(3)従来技術と問題点
アルミニウム(Anりは伝導度が大きく、配線用金属と
して優れた特性を有するので、半導体産業ではアルミニ
ウムを種々配線金属として用いているが、通常、真空蒸
着法や電子ビーム蒸着法で行なわれている。(3) Conventional technology and problems Aluminum (An) has high conductivity and excellent properties as a wiring metal, so aluminum is used as a wiring metal in various ways in the semiconductor industry. It is performed using beam evaporation method.
上記の方法によりアルミニウム配線が行なわれ、仮にそ
のアルミニウム配線パターンにずれが生じた場合、例え
ば抵抗電極の配線の際、配線パターンずれによって、抵
抗電極がアルミニウムで覆われず、一部露出してしまう
と回路上の抵抗値が著しく増大し、動作不良につながっ
てしまう。Aluminum wiring is performed using the above method, and if a deviation occurs in the aluminum wiring pattern, for example, when wiring a resistance electrode, due to the wiring pattern deviation, the resistance electrode is not covered with aluminum and is partially exposed. The resistance value on the circuit increases significantly, leading to malfunction.
このように、アルミニウム配線パターンのずれは重要な
問題であるにもかかわらず、従来では実際に回路の動作
不良が生じた際、これがアルミニラム配線パターンずれ
によるものであるのか、またアルミニウム配線パターン
ずれであっても、どの粉度いレミニウム配線゛がずれて
いるのかを検出 ・することが非常に困難であった。In this way, although misalignment of aluminum wiring patterns is an important problem, in the past, when a circuit malfunction actually occurred, it was difficult to determine whether it was due to misalignment of aluminum wiring patterns or whether it was due to misalignment of aluminum wiring patterns. Even if there were, it was extremely difficult to detect which fine-grained reminium wiring was misaligned.
(4)発明の目的
本発明は上記従来の欠点に鑑々、アルミニウム等の配線
のパターン゛ずれの検出を可能にした半導体装置を提供
することを目的とする。(4) Purpose of the Invention In view of the above-mentioned drawbacks of the conventional semiconductor device, it is an object of the present invention to provide a semiconductor device that makes it possible to detect pattern deviations in wiring made of aluminum or the like.
上記目的は本発明によれば複数の抵抗と、該抵抗の電極
の覆い方を異ならしめた配線パターンとを設け、前記抵
抗の抵抗値の変化により前記配線のパターンずれを検出
できる様にしたことを特徴とする半導体装置”を提供干
ることによって達成される。According to the present invention, the above object is to provide a plurality of resistors and wiring patterns in which the electrodes of the resistors are covered in different ways, so that it is possible to detect a pattern shift of the wiring based on a change in the resistance value of the resistors. This is achieved by providing a semiconductor device with the following characteristics.
(6)発明の実施例
以下、本発明の一実施例を図面によって説明する。 抵
抗R1〜R6の電極1b、2b、3b。(6) Embodiment of the Invention Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Electrodes 1b, 2b, 3b of resistors R1 to R6.
4b、5b、6bは共通にアルミニウム配線パターン7
で覆われており、電極1a、2a、3a。4b, 5b, 6b are common aluminum wiring pattern 7
covered with electrodes 1a, 2a, and 3a.
ja、5a、6aはアルミニウムによる覆われ方の異な
る配線パターン1,2,3,4,5.6でそれぞれMl
□われている。すなわち、抵抗R1〜R3においては1
1=12=13、かつml、>m2>m3の関係を満た
すように設計されたアルミニウム配線パターン1〜3が
それぞれ設けられており、また抵抗R4〜R6において
は、m4=m5= m 6、かつ44>#5>R6の関
係を満たすように設計されたアルミニウム配線パターン
4〜6がそれぞれ設けられている。つまり、抵抗の一部
を露出するためのコンタクト窓の覆い方を変えた配線パ
ターンが設けられている。尚、図面には例として抵抗R
1とR4をパッドPに配線した場合を示したが、他の抵
抗も同様にパッドPに配線されている。また、抵抗R1
〜R6の設計上の抵抗値は全て等しい。ja, 5a, and 6a are wiring patterns 1, 2, 3, 4, and 5.6 that are covered with aluminum in different ways, respectively.
□It is being done. That is, in resistors R1 to R3, 1
Aluminum wiring patterns 1 to 3 are respectively designed to satisfy the relationship 1=12=13 and ml,>m2>m3, and for resistors R4 to R6, m4=m5=m6, Aluminum wiring patterns 4 to 6 designed to satisfy the relationship 44>#5>R6 are provided, respectively. In other words, a wiring pattern is provided in which the contact window is covered in a different manner to expose a portion of the resistor. In addition, in the drawing, the resistor R is shown as an example.
Although the case where resistors 1 and R4 are wired to pad P is shown, other resistors are wired to pad P in the same way. Also, resistor R1
The design resistance values of ~R6 are all equal.
このようなアルミニウムによる電極の覆われ方が異なる
アルミニウム配線パターン1〜6を設けた抵抗R1〜R
6をICチップ内に通常パターン ゛とともに形成させ
る。アルミニウムの配線が設計値よりもずれ、しかもそ
のずれが許容範囲を超えてしまって、抵抗電極がアルミ
ニウムで覆われず、1部露出してしまうと、抵抗値が正
常値よりも非常に高い値を示す。そこで、抵抗R1〜R
6の抵抗値を実際に測定し、異常値を示すものがあった
場合には、その抵抗のアルミニウム配線パターンの設計
値からアルミニウム配線のパターンずれを検出する。例
えば、抵抗R1〜R6の回路上の抵抗値をそれぞれ測定
し、仮に抵抗R3の抵抗値が異常値を示した場合につい
て説明する。抵抗R3の電極3aを覆っているアルミニ
ウム配線パターン3の設計値をI13.=2p、m3=
0.5μとすれば、上方向(図面に対する、以下同様)
へのアルミニウム配線のパターンずれの許容範囲は0.
5μであり、0.5μ以上ずれてしまうと、電極3aは
一部アルミニウムで覆−われず露出することになり、抵
抗値が上がる。従って、抵抗R3・の抵抗値が異常値を
示した場合にはアルミニウム配線のパターンは少なくと
も上方向へ0.5μ以上ずれていることが検出できる。Resistors R1 to R are provided with aluminum wiring patterns 1 to 6 in which the electrodes are covered with aluminum in different ways.
6 is formed in the IC chip along with a normal pattern. If the aluminum wiring deviates from the design value and the deviation exceeds the allowable range, and the resistance electrode is not covered with aluminum and a portion is exposed, the resistance value will be much higher than the normal value. shows. Therefore, the resistors R1 to R
The resistance values of No. 6 are actually measured, and if any shows an abnormal value, the pattern deviation of the aluminum wiring is detected from the design value of the aluminum wiring pattern for that resistance. For example, a case will be described in which the resistance values of the resistors R1 to R6 on the circuit are measured, and the resistance value of the resistor R3 shows an abnormal value. The design value of the aluminum wiring pattern 3 covering the electrode 3a of the resistor R3 is I13. =2p, m3=
If 0.5 μ, upward direction (with respect to the drawing, the same applies below)
The tolerance range for pattern deviation of aluminum wiring is 0.
5μ, and if the deviation is 0.5μ or more, the electrode 3a will be partially uncovered and exposed, resulting in an increase in resistance. Therefore, when the resistance value of the resistor R3 shows an abnormal value, it can be detected that the aluminum wiring pattern is shifted upward by at least 0.5 μ or more.
5−
同様に抵抗R6の電極6aを覆っているアルミニウム配
線パターン6の設計値をβ6=0.5μ、m6=2μで
あるとすれば、アルミニウム配線の下方向へのパターン
ずれの許容範囲は0.5μとなり、仮にこの抵抗R6の
抵抗値が異常値を示した場合にはアルミニウム配・線の
パターンは少なくとも下方向へ0.5μ以上ずれていく
ことが検出できる。5- Similarly, if the design values of the aluminum wiring pattern 6 covering the electrode 6a of the resistor R6 are β6 = 0.5μ and m6 = 2μ, then the allowable range of downward pattern shift of the aluminum wiring is 0. .5μ, and if the resistance value of this resistor R6 shows an abnormal value, it can be detected that the pattern of the aluminum wiring/wire is shifted downward by at least 0.5μ.
また、抵抗値が異常値を示さない場合には、アルミニウ
ム配線゛のパターンずれがあってもそのずれはアルミニ
ウム配線パターンの設計値におけるずれの許容範囲内で
あることが判る。Further, if the resistance value does not show an abnormal value, it can be seen that even if there is a pattern deviation of the aluminum wiring, the deviation is within the allowable range of deviation in the design value of the aluminum wiring pattern.
従って、このように各抵抗についてその抵抗値を測定し
、ア・ルミニウム配線パターンの設計値から判定するこ
とで、アルミニウム配線パターンの設計値からのずれの
有無さらにはずれがあった場合におけるそのずれの量を
検出することができる。Therefore, by measuring the resistance value of each resistor and judging it from the design value of the aluminum wiring pattern, it is possible to determine whether or not there is a deviation from the design value of the aluminum wiring pattern, and if there is a deviation, the deviation. amount can be detected.
また、アルミニウム配線パターンにより各抵抗電極のア
ルミニウムによる覆われ方は異なっており、その異なり
方は配線パターンの設計値として予めわかっているので
、アルミニウム配線パターンが6−
一定方向へ共通してずれると、どの抵抗の抵抗値が大に
なったかによってその抵抗値の変化した抵抗の各アルミ
ニウム配線パターンのかぶり度合の設計値から、ずれの
量を高精度で検出することができる。In addition, the way each resistor electrode is covered with aluminum differs depending on the aluminum wiring pattern, and this difference is known in advance as the design value of the wiring pattern, so if the aluminum wiring pattern deviates in common in a certain direction, , the amount of deviation can be detected with high precision from the design value of the degree of covering of each aluminum wiring pattern of the resistor whose resistance value changes depending on which resistor has a large resistance value.
尚、このようなアルミニウム配線パターンを設けた抵抗
R1〜R6は実際のICにおけるモニターチップ内に設
ければ良いことはもちろんであるが製品チップ内のコー
ナー等のパターンのない部分に設けても良い。It should be noted that the resistors R1 to R6 provided with such an aluminum wiring pattern can of course be provided in the monitor chip of the actual IC, but they may also be provided in a part without a pattern such as a corner of the product chip. .
本実施例においてはアルミニウムによる電極の覆われ方
が異なるアルミニウム配線パターンを1〜6の6種類と
した場合について説明したがアルミニウム配線のパター
ンずれの程度等を考慮し、必要に応じてアルミニウム配
線パターンの数を増やすことや減らすこともできること
はいうまでもない。In this embodiment, six types of aluminum wiring patterns 1 to 6 are used in which the electrodes are covered with aluminum in different ways. It goes without saying that the number can be increased or decreased.
また、本実施例においては、アルミニウムによる配線を
行なう場合について説明したが、アルミニウムに限定さ
れず、例えばポリシリコン等の配線を行なう場合におい
ても本発明を通用できる。Further, in this embodiment, a case has been described in which wiring is made of aluminum, but the invention is not limited to aluminum, and the present invention can also be applied to wiring made of polysilicon or the like.
(7)発明の効果
以上詳細に説明したように、本発明によれば、アルミニ
ウム等の配線のパターンずれの有無、またそのずれの量
を容易に検出することが出来る。(7) Effects of the Invention As described in detail above, according to the present invention, it is possible to easily detect the presence or absence of pattern deviation of wiring such as aluminum and the amount of the deviation.
また、回路の動作不良が生じた場合、これがアルミニウ
ム等の配線のパターンずれによるものであるか否かを判
定することが出来るので、不良検査に関しても効果大な
るものである。Furthermore, if a malfunction occurs in the circuit, it can be determined whether or not the malfunction is due to a pattern shift of wiring such as aluminum, which is very effective for defect inspection.
図は本発明の一実施例における抵抗電極のアルミニウム
配線パターン図である。
1.2,3,4,5,6.7・・・アルミニウム配線パ
ターン la、2a、3a、4a。
5a、6a、Lb、2b、3b、4b、5b。
6b、・・・電極 R1,R2,R3,R4゜R5,R
6・・・抵抗The figure is an aluminum wiring pattern diagram of a resistance electrode in one embodiment of the present invention. 1.2, 3, 4, 5, 6.7... Aluminum wiring pattern la, 2a, 3a, 4a. 5a, 6a, Lb, 2b, 3b, 4b, 5b. 6b,... Electrode R1, R2, R3, R4°R5, R
6...Resistance
Claims (1)
線パターンとを設け、前記抵抗の抵抗値の変化により前
記配線のパターンずれを検出できる様にしたことを特徴
とする半導体装置。1. A semiconductor device comprising a plurality of resistors and a wiring pattern in which the electrodes of the resistors are covered in different ways, and a pattern shift of the wiring can be detected based on a change in the resistance value of the resistors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11908783A JPS6010740A (en) | 1983-06-30 | 1983-06-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11908783A JPS6010740A (en) | 1983-06-30 | 1983-06-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6010740A true JPS6010740A (en) | 1985-01-19 |
Family
ID=14752565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11908783A Pending JPS6010740A (en) | 1983-06-30 | 1983-06-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6010740A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04197361A (en) * | 1990-11-29 | 1992-07-16 | Koji Inoue | Tube in trachea for ventilating one side lung |
US9326873B2 (en) | 2007-10-12 | 2016-05-03 | Spiration, Inc. | Valve loader method, system, and apparatus |
US9622752B2 (en) | 2003-08-08 | 2017-04-18 | Spiration, Inc. | Bronchoscopic repair of air leaks in a lung |
-
1983
- 1983-06-30 JP JP11908783A patent/JPS6010740A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04197361A (en) * | 1990-11-29 | 1992-07-16 | Koji Inoue | Tube in trachea for ventilating one side lung |
US9622752B2 (en) | 2003-08-08 | 2017-04-18 | Spiration, Inc. | Bronchoscopic repair of air leaks in a lung |
US9326873B2 (en) | 2007-10-12 | 2016-05-03 | Spiration, Inc. | Valve loader method, system, and apparatus |
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