JPS6010740A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6010740A
JPS6010740A JP11908783A JP11908783A JPS6010740A JP S6010740 A JPS6010740 A JP S6010740A JP 11908783 A JP11908783 A JP 11908783A JP 11908783 A JP11908783 A JP 11908783A JP S6010740 A JPS6010740 A JP S6010740A
Authority
JP
Japan
Prior art keywords
aluminum
wiring
resistors
pattern
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11908783A
Other languages
Japanese (ja)
Inventor
Mitsuhisa Shimizu
光久 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11908783A priority Critical patent/JPS6010740A/en
Publication of JPS6010740A publication Critical patent/JPS6010740A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enable to detect the pattern discrepancy of the wiring of aluminum, etc. of a semiconductor device by a method wherein resistors of the plural number, and wiring patterns having the different covering states on the electrodes of the resistors are provided, and the pattern discrepancy of the wiring is enabled to be detected according to the change of the resistance value of the resistor. CONSTITUTION:Resistors R1-R6 provided with aluminum wiring patterns 1-6 having the different covering states according to aluminum on the electrodes of the resistors are formed in an IC chip together with normal patterns. When the aluminum wiring is slipped from a design value, and moreover when slippage thereof exceeds an allowable range, and the resistor electrode is not covered with aluminum to expose a part, the resistance value indicates an extremely higher value than a normal value. Accordingly, the resistance values of the resistors R1-R6 are measured actually, and when the resistor to indicates an abnormal value exists, the pattern discrepancy of the aluminum wiring is detected from the design value of the aluminum wiring pattern of the resistor thereof.

Description

【発明の詳細な説明】 （１）発明の技術分野 本発明は半導体装置に係り、特にアルミニウム等の配線
のパターンずれの検出手段に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a semiconductor device, and particularly to means for detecting pattern deviation of wiring made of aluminum or the like.

（２）技術の背景 各種電子装置の小型・軽量化、さらには低価格、信頼性
、性能の向上を目的として回路の集積化が行なわれてき
たが、最近ではその集積度も著しく増加している。回路
の高集積化に伴い単位面積あたりの素子数が増加し、回
路パターンも微細化の一途をたどっている。従って、こ
の微細回路パターンを形成するにあたり、高精度の製造
技術すなわち微細加工技術が要求されている。さらに、
単なる微細加工技術の向上だけでなく、その加工精度に
対する要求も著しく高まっているのが現状である。(2) Background of the technology Circuits have been integrated with the aim of reducing the size and weight of various electronic devices, as well as improving their cost, reliability, and performance.Recently, the degree of integration has increased significantly. There is. As circuits become more highly integrated, the number of elements per unit area increases, and circuit patterns continue to become smaller. Therefore, in forming this fine circuit pattern, highly accurate manufacturing technology, that is, microfabrication technology is required. moreover,
The current situation is that not only the improvement of microfabrication technology but also the demand for its machining accuracy has increased significantly.

（３）従来技術と問題点 アルミニウム（Ａｎりは伝導度が大きく、配線用金属と
して優れた特性を有するので、半導体産業ではアルミニ
ウムを種々配線金属として用いているが、通常、真空蒸
着法や電子ビーム蒸着法で行なわれている。(3) Conventional technology and problems Aluminum (An) has high conductivity and excellent properties as a wiring metal, so aluminum is used as a wiring metal in various ways in the semiconductor industry. It is performed using beam evaporation method.

上記の方法によりアルミニウム配線が行なわれ、仮にそ
のアルミニウム配線パターンにずれが生じた場合、例え
ば抵抗電極の配線の際、配線パターンずれによって、抵
抗電極がアルミニウムで覆われず、一部露出してしまう
と回路上の抵抗値が著しく増大し、動作不良につながっ
てしまう。Aluminum wiring is performed using the above method, and if a deviation occurs in the aluminum wiring pattern, for example, when wiring a resistance electrode, due to the wiring pattern deviation, the resistance electrode is not covered with aluminum and is partially exposed. The resistance value on the circuit increases significantly, leading to malfunction.

このように、アルミニウム配線パターンのずれは重要な
問題であるにもかかわらず、従来では実際に回路の動作
不良が生じた際、これがアルミニラム配線パターンずれ
によるものであるのか、またアルミニウム配線パターン
ずれであっても、どの粉度いレミニウム配線゛がずれて
いるのかを検出　・することが非常に困難であった。In this way, although misalignment of aluminum wiring patterns is an important problem, in the past, when a circuit malfunction actually occurred, it was difficult to determine whether it was due to misalignment of aluminum wiring patterns or whether it was due to misalignment of aluminum wiring patterns. Even if there were, it was extremely difficult to detect which fine-grained reminium wiring was misaligned.

（４）発明の目的 本発明は上記従来の欠点に鑑々、アルミニウム等の配線
のパターン゛ずれの検出を可能にした半導体装置を提供
することを目的とする。(4) Purpose of the Invention In view of the above-mentioned drawbacks of the conventional semiconductor device, it is an object of the present invention to provide a semiconductor device that makes it possible to detect pattern deviations in wiring made of aluminum or the like.

上記目的は本発明によれば複数の抵抗と、該抵抗の電極
の覆い方を異ならしめた配線パターンとを設け、前記抵
抗の抵抗値の変化により前記配線のパターンずれを検出
できる様にしたことを特徴とする半導体装置”を提供干
ることによって達成される。According to the present invention, the above object is to provide a plurality of resistors and wiring patterns in which the electrodes of the resistors are covered in different ways, so that it is possible to detect a pattern shift of the wiring based on a change in the resistance value of the resistors. This is achieved by providing a semiconductor device with the following characteristics.

（６）発明の実施例 以下、本発明の一実施例を図面によって説明する。　抵
抗Ｒ１〜Ｒ６の電極１ｂ、２ｂ、３ｂ。(6) Embodiment of the Invention Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Electrodes 1b, 2b, 3b of resistors R1 to R6.

４ｂ、５ｂ、６ｂは共通にアルミニウム配線パターン７
で覆われており、電極１ａ、２ａ、３ａ。4b, 5b, 6b are common aluminum wiring pattern 7
covered with electrodes 1a, 2a, and 3a.

ｊａ、５ａ、６ａはアルミニウムによる覆われ方の異な
る配線パターン１，２，３，４，５．６でそれぞれＭｌ
□われている。すなわち、抵抗Ｒ１〜Ｒ３においては１
１＝１２＝１３、かつｍｌ、＞ｍ２＞ｍ３の関係を満た
すように設計されたアルミニウム配線パターン１〜３が
それぞれ設けられており、また抵抗Ｒ４〜Ｒ６において
は、ｍ４＝ｍ５＝　ｍ　６、かつ４４＞＃５＞Ｒ６の関
係を満たすように設計されたアルミニウム配線パターン
４〜６がそれぞれ設けられている。つまり、抵抗の一部
を露出するためのコンタクト窓の覆い方を変えた配線パ
ターンが設けられている。尚、図面には例として抵抗Ｒ
１とＲ４をパッドＰに配線した場合を示したが、他の抵
抗も同様にパッドＰに配線されている。また、抵抗Ｒ１
〜Ｒ６の設計上の抵抗値は全て等しい。ja, 5a, and 6a are wiring patterns 1, 2, 3, 4, and 5.6 that are covered with aluminum in different ways, respectively.
□It is being done. That is, in resistors R1 to R3, 1
Aluminum wiring patterns 1 to 3 are respectively designed to satisfy the relationship 1=12=13 and ml,>m2>m3, and for resistors R4 to R6, m4=m5=m6, Aluminum wiring patterns 4 to 6 designed to satisfy the relationship 44>#5>R6 are provided, respectively. In other words, a wiring pattern is provided in which the contact window is covered in a different manner to expose a portion of the resistor. In addition, in the drawing, the resistor R is shown as an example.
Although the case where resistors 1 and R4 are wired to pad P is shown, other resistors are wired to pad P in the same way. Also, resistor R1
The design resistance values of ~R6 are all equal.

このようなアルミニウムによる電極の覆われ方が異なる
アルミニウム配線パターン１〜６を設けた抵抗Ｒ１〜Ｒ
６をＩＣチップ内に通常パターン　゛とともに形成させ
る。アルミニウムの配線が設計値よりもずれ、しかもそ
のずれが許容範囲を超えてしまって、抵抗電極がアルミ
ニウムで覆われず、１部露出してしまうと、抵抗値が正
常値よりも非常に高い値を示す。そこで、抵抗Ｒ１〜Ｒ
６の抵抗値を実際に測定し、異常値を示すものがあった
場合には、その抵抗のアルミニウム配線パターンの設計
値からアルミニウム配線のパターンずれを検出する。例
えば、抵抗Ｒ１〜Ｒ６の回路上の抵抗値をそれぞれ測定
し、仮に抵抗Ｒ３の抵抗値が異常値を示した場合につい
て説明する。抵抗Ｒ３の電極３ａを覆っているアルミニ
ウム配線パターン３の設計値をＩ１３．＝２ｐ、ｍ３＝
０．５μとすれば、上方向（図面に対する、以下同様）
へのアルミニウム配線のパターンずれの許容範囲は０．
５μであり、０．５μ以上ずれてしまうと、電極３ａは
一部アルミニウムで覆−われず露出することになり、抵
抗値が上がる。従って、抵抗Ｒ３・の抵抗値が異常値を
示した場合にはアルミニウム配線のパターンは少なくと
も上方向へ０．５μ以上ずれていることが検出できる。Resistors R1 to R are provided with aluminum wiring patterns 1 to 6 in which the electrodes are covered with aluminum in different ways.
6 is formed in the IC chip along with a normal pattern. If the aluminum wiring deviates from the design value and the deviation exceeds the allowable range, and the resistance electrode is not covered with aluminum and a portion is exposed, the resistance value will be much higher than the normal value. shows. Therefore, the resistors R1 to R
The resistance values of No. 6 are actually measured, and if any shows an abnormal value, the pattern deviation of the aluminum wiring is detected from the design value of the aluminum wiring pattern for that resistance. For example, a case will be described in which the resistance values of the resistors R1 to R6 on the circuit are measured, and the resistance value of the resistor R3 shows an abnormal value. The design value of the aluminum wiring pattern 3 covering the electrode 3a of the resistor R3 is I13. =2p, m3=
If 0.5 μ, upward direction (with respect to the drawing, the same applies below)
The tolerance range for pattern deviation of aluminum wiring is 0.
5μ, and if the deviation is 0.5μ or more, the electrode 3a will be partially uncovered and exposed, resulting in an increase in resistance. Therefore, when the resistance value of the resistor R3 shows an abnormal value, it can be detected that the aluminum wiring pattern is shifted upward by at least 0.5 μ or more.

５− 同様に抵抗Ｒ６の電極６ａを覆っているアルミニウム配
線パターン６の設計値をβ６＝０．５μ、ｍ６＝２μで
あるとすれば、アルミニウム配線の下方向へのパターン
ずれの許容範囲は０．５μとなり、仮にこの抵抗Ｒ６の
抵抗値が異常値を示した場合にはアルミニウム配・線の
パターンは少なくとも下方向へ０．５μ以上ずれていく
ことが検出できる。5- Similarly, if the design values of the aluminum wiring pattern 6 covering the electrode 6a of the resistor R6 are β6 = 0.5μ and m6 = 2μ, then the allowable range of downward pattern shift of the aluminum wiring is 0. .5μ, and if the resistance value of this resistor R6 shows an abnormal value, it can be detected that the pattern of the aluminum wiring/wire is shifted downward by at least 0.5μ.

また、抵抗値が異常値を示さない場合には、アルミニウ
ム配線゛のパターンずれがあってもそのずれはアルミニ
ウム配線パターンの設計値におけるずれの許容範囲内で
あることが判る。Further, if the resistance value does not show an abnormal value, it can be seen that even if there is a pattern deviation of the aluminum wiring, the deviation is within the allowable range of deviation in the design value of the aluminum wiring pattern.

従って、このように各抵抗についてその抵抗値を測定し
、ア・ルミニウム配線パターンの設計値から判定するこ
とで、アルミニウム配線パターンの設計値からのずれの
有無さらにはずれがあった場合におけるそのずれの量を
検出することができる。Therefore, by measuring the resistance value of each resistor and judging it from the design value of the aluminum wiring pattern, it is possible to determine whether or not there is a deviation from the design value of the aluminum wiring pattern, and if there is a deviation, the deviation. amount can be detected.

また、アルミニウム配線パターンにより各抵抗電極のア
ルミニウムによる覆われ方は異なっており、その異なり
方は配線パターンの設計値として予めわかっているので
、アルミニウム配線パターンが６− 一定方向へ共通してずれると、どの抵抗の抵抗値が大に
なったかによってその抵抗値の変化した抵抗の各アルミ
ニウム配線パターンのかぶり度合の設計値から、ずれの
量を高精度で検出することができる。In addition, the way each resistor electrode is covered with aluminum differs depending on the aluminum wiring pattern, and this difference is known in advance as the design value of the wiring pattern, so if the aluminum wiring pattern deviates in common in a certain direction, , the amount of deviation can be detected with high precision from the design value of the degree of covering of each aluminum wiring pattern of the resistor whose resistance value changes depending on which resistor has a large resistance value.

尚、このようなアルミニウム配線パターンを設けた抵抗
Ｒ１〜Ｒ６は実際のＩＣにおけるモニターチップ内に設
ければ良いことはもちろんであるが製品チップ内のコー
ナー等のパターンのない部分に設けても良い。It should be noted that the resistors R1 to R6 provided with such an aluminum wiring pattern can of course be provided in the monitor chip of the actual IC, but they may also be provided in a part without a pattern such as a corner of the product chip. .

本実施例においてはアルミニウムによる電極の覆われ方
が異なるアルミニウム配線パターンを１〜６の６種類と
した場合について説明したがアルミニウム配線のパター
ンずれの程度等を考慮し、必要に応じてアルミニウム配
線パターンの数を増やすことや減らすこともできること
はいうまでもない。In this embodiment, six types of aluminum wiring patterns 1 to 6 are used in which the electrodes are covered with aluminum in different ways. It goes without saying that the number can be increased or decreased.

また、本実施例においては、アルミニウムによる配線を
行なう場合について説明したが、アルミニウムに限定さ
れず、例えばポリシリコン等の配線を行なう場合におい
ても本発明を通用できる。Further, in this embodiment, a case has been described in which wiring is made of aluminum, but the invention is not limited to aluminum, and the present invention can also be applied to wiring made of polysilicon or the like.

（７）発明の効果 以上詳細に説明したように、本発明によれば、アルミニ
ウム等の配線のパターンずれの有無、またそのずれの量
を容易に検出することが出来る。(7) Effects of the Invention As described in detail above, according to the present invention, it is possible to easily detect the presence or absence of pattern deviation of wiring such as aluminum and the amount of the deviation.

また、回路の動作不良が生じた場合、これがアルミニウ
ム等の配線のパターンずれによるものであるか否かを判
定することが出来るので、不良検査に関しても効果大な
るものである。Furthermore, if a malfunction occurs in the circuit, it can be determined whether or not the malfunction is due to a pattern shift of wiring such as aluminum, which is very effective for defect inspection.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の一実施例における抵抗電極のアルミニウム
配線パターン図である。 １．２，３，４，５，６．７・・・アルミニウム配線パ
ターン　ｌａ、２ａ、３ａ、４ａ。 ５ａ、６ａ、Ｌｂ、２ｂ、３ｂ、４ｂ、５ｂ。 ６ｂ、・・・電極　Ｒ１，Ｒ２，Ｒ３，Ｒ４゜Ｒ５，Ｒ
６・・・抵抗The figure is an aluminum wiring pattern diagram of a resistance electrode in one embodiment of the present invention. 1.2, 3, 4, 5, 6.7... Aluminum wiring pattern la, 2a, 3a, 4a. 5a, 6a, Lb, 2b, 3b, 4b, 5b. 6b,... Electrode R1, R2, R3, R4°R5, R
6...Resistance

Claims (1)

【特許請求の範囲】[Claims] 複数の抵抗と、該抵抗の電極の覆い方を異ならしめた配
線パターンとを設け、前記抵抗の抵抗値の変化により前
記配線のパターンずれを検出できる様にしたことを特徴
とする半導体装置。1. A semiconductor device comprising a plurality of resistors and a wiring pattern in which the electrodes of the resistors are covered in different ways, and a pattern shift of the wiring can be detected based on a change in the resistance value of the resistors.
JP11908783A 1983-06-30 1983-06-30 Semiconductor device Pending JPS6010740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11908783A JPS6010740A (en) 1983-06-30 1983-06-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11908783A JPS6010740A (en) 1983-06-30 1983-06-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6010740A true JPS6010740A (en) 1985-01-19

Family

ID=14752565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11908783A Pending JPS6010740A (en) 1983-06-30 1983-06-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6010740A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04197361A (en) * 1990-11-29 1992-07-16 Koji Inoue Tube in trachea for ventilating one side lung
US9326873B2 (en) 2007-10-12 2016-05-03 Spiration, Inc. Valve loader method, system, and apparatus
US9622752B2 (en) 2003-08-08 2017-04-18 Spiration, Inc. Bronchoscopic repair of air leaks in a lung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04197361A (en) * 1990-11-29 1992-07-16 Koji Inoue Tube in trachea for ventilating one side lung
US9622752B2 (en) 2003-08-08 2017-04-18 Spiration, Inc. Bronchoscopic repair of air leaks in a lung
US9326873B2 (en) 2007-10-12 2016-05-03 Spiration, Inc. Valve loader method, system, and apparatus

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