JPS5999720A - レジスト像形成方法 - Google Patents
レジスト像形成方法Info
- Publication number
- JPS5999720A JPS5999720A JP20847182A JP20847182A JPS5999720A JP S5999720 A JPS5999720 A JP S5999720A JP 20847182 A JP20847182 A JP 20847182A JP 20847182 A JP20847182 A JP 20847182A JP S5999720 A JPS5999720 A JP S5999720A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- rinsing
- stage
- ipa
- mibk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20847182A JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20847182A JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5999720A true JPS5999720A (ja) | 1984-06-08 |
| JPH0356469B2 JPH0356469B2 (enExample) | 1991-08-28 |
Family
ID=16556720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20847182A Granted JPS5999720A (ja) | 1982-11-30 | 1982-11-30 | レジスト像形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5999720A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403699A (en) * | 1989-10-19 | 1995-04-04 | Fujitsu Limited | Process for formation of resist patterns |
| JP2007191399A (ja) * | 2006-01-17 | 2007-08-02 | Arakawa Chem Ind Co Ltd | 脂環式化合物およびその製造方法 |
| WO2016208313A1 (ja) * | 2015-06-23 | 2016-12-29 | 富士フイルム株式会社 | 現像液、パターン形成方法、及び電子デバイスの製造方法 |
-
1982
- 1982-11-30 JP JP20847182A patent/JPS5999720A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403699A (en) * | 1989-10-19 | 1995-04-04 | Fujitsu Limited | Process for formation of resist patterns |
| JP2007191399A (ja) * | 2006-01-17 | 2007-08-02 | Arakawa Chem Ind Co Ltd | 脂環式化合物およびその製造方法 |
| WO2016208313A1 (ja) * | 2015-06-23 | 2016-12-29 | 富士フイルム株式会社 | 現像液、パターン形成方法、及び電子デバイスの製造方法 |
| JPWO2016208313A1 (ja) * | 2015-06-23 | 2018-04-12 | 富士フイルム株式会社 | パターン形成方法、及び電子デバイスの製造方法 |
| US10562991B2 (en) | 2015-06-23 | 2020-02-18 | Fujifilm Corporation | Developer, pattern forming method, and electronic device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0356469B2 (enExample) | 1991-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5173393A (en) | Etch-resistant deep ultraviolet resist process having an aromatic treating step after development | |
| DE2451902C3 (de) | Hochempfindlicher positiver Photolackschichtaufbau aus durch Strahlung abbaubaren, entwicklungsfähigen organischen Polymeren und Verfahren zur Herstellung einer Photolackmaske | |
| JP3748596B2 (ja) | レジスト材料及びレジストパターンの形成方法 | |
| EP0064222B1 (en) | Process for forming resist patterns | |
| JPS5949536A (ja) | 微細パタ−ン形成方法 | |
| JPS5999720A (ja) | レジスト像形成方法 | |
| US4279984A (en) | Positive resist for high energy radiation | |
| JPH0210824A (ja) | 電子線レジスト現像方法 | |
| JPS617835A (ja) | レジスト材料 | |
| JP2001318472A5 (enExample) | ||
| JPS5828571B2 (ja) | 微細加工用レジスト形成方法 | |
| JP2867509B2 (ja) | レジストパターンの形成方法 | |
| JPH087441B2 (ja) | ポジ型高感度放射線感応性レジスト | |
| JPH06110214A (ja) | レジストパターンの形成方法 | |
| JP2871010B2 (ja) | ポジ型電子線レジスト液 | |
| JPS60252348A (ja) | パタ−ン形成方法 | |
| JPS6259950A (ja) | 電離放射線感応ポジ型レジスト | |
| JP2001060583A (ja) | 微細パターンの形成方法および半導体装置の製造方法 | |
| DE3889896T2 (de) | Verfahren zur erzeugung von strukturen unter anwendung einer strahlungsinduzierten pfropfpolymerisationsreaktion. | |
| JPS6155922A (ja) | パタ−ン形成方法 | |
| JPS60254041A (ja) | パタ−ン形成方法 | |
| JPH01217341A (ja) | ポジ型電子線レジストのパターン形成方法 | |
| JPH0328703B2 (enExample) | ||
| JPS60179737A (ja) | ポジ型レジスト材料 | |
| JPH0210354A (ja) | パターン形成方法 |