JPS5994431A - ボンデイング方法 - Google Patents

ボンデイング方法

Info

Publication number
JPS5994431A
JPS5994431A JP57204070A JP20407082A JPS5994431A JP S5994431 A JPS5994431 A JP S5994431A JP 57204070 A JP57204070 A JP 57204070A JP 20407082 A JP20407082 A JP 20407082A JP S5994431 A JPS5994431 A JP S5994431A
Authority
JP
Japan
Prior art keywords
bonding
thin metal
metal wire
wire
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57204070A
Other languages
English (en)
Other versions
JPH0126532B2 (ja
Inventor
Isamu Kitahiro
北広　勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57204070A priority Critical patent/JPS5994431A/ja
Publication of JPS5994431A publication Critical patent/JPS5994431A/ja
Publication of JPH0126532B2 publication Critical patent/JPH0126532B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体素子の組立方法、特にワイヤボンディン
グ法に関するものである。
従来例の構成とその問題点 半導体装置は近年ますます高密度化、高機能化され、ピ
ン数が増大している。従来のボンディング法、例えば金
線熱圧着法では、半導体素子上電極（以下パッドと称す
）の大きさは１１０μｍ角。
パッド間隔は１５０μｍ程度必要であシ、ピッチは約２
５０μｍとなる。このことは必然的にチップサイズを増
大させるため、ボンディングをどうするか今後ＶＬＳＩ
になれば大きな問題となる。
以下に従来のワイヤボンディング法について説明する。
第１凹入においては１は立チップ載置部２は半導体素子
、３は外部リード、４は素子２上のパッド、５は金属細
線である。第１図Ｂは金線を用いた熱圧着法によシワイ
ヤボンディングされた半導体装置の断面構造を示したも
ので、第１図１図Ａと同一番号を付した。６は金属細線
の先端で通常ネールヘッドと呼ばれている。通常は第１
図ＡＫ示す如く金属細線５でパッド４とリード３間が接
続されるが、その金属細線の方向は一定していない。第
１図Ｂに示した断面図の如く、金線を用いだ熱圧着法で
はボンディングツールとしてキャピラリーと呼ばれる中
央に金線を通す貫通孔を有する構造のものが使用される
。熱圧着法では、ツール先端から引き出された金線の先
端が直径１００μｍ程度の球形になっておシ、それをパ
ッドに打ちつけるため、第１図Ｂのネールヘッド６のよ
うな形状になるとともに、ボンディング時の方向性がな
い。即ち、第１図Ａの状態で、半導体素子、収納容器を
回転することなく、全周をボンディングすることが可能
である。これが熱圧着法の最大の長所であるが、一方、
金線先端に形成された直径１００μｍ角のパッドと１５
０μｍの間隔が必要とされている。
体素子を回転させなければ全周ボンディングすることが
できず、樹脂封止用の多連のリードフレームに適用でき
ない。第２図において２１はツール、２２はアルミ線で
ある。この方法では金属細線の先端を球状にし々いため
、パッドも５０μｍ位で良く、間隔も場合によっては３
０μｍ位で良い。
しかしながら、上述の如く、全周ボンディングするため
には半導体素子を回転させねばならず、装置が非常に犬
がかシになる上、ボンディング速度が極めて低下するた
め特殊な収納容器にしか適用できない。
発明の目的 本発明は以上のような従来の問題点に鑑み、金属細線先
端に球を作ることなく、全方向ボンディングの可能なボ
ンディング方法を提供することを目的とする。
発明の構成 本発明は半導体素子上電極と外部リードとを接続し終え
た金属細線を切断するにあだシ、従来は面に垂直にボン
ディングツールを引きあげていたのに対し、次に接続す
べき素子上の電極と外部リードを結ぶ直線に平行にツー
ルを移動させてから細線を接続することにより、あらか
じめ、金属細線の先端に方向性をもたせておき、半導体
素子を回転させることなく全周ボンディングを可能とす
るものである。
実施例の説明 第３図は本発明の実施例におけるボンディング法を示す
図である。番号１〜４は第１図と同一箇所を示す。３１
は第１パツド、３２は第１リード。
３３は第２パツド、３４は第２リード、３５．３７はボ
ンディングツールを示す。３６．３７は金属細線先端、
３９．３９’、４０は方向を示す仮想線である。
第３図にしだがって本実施例のボンディング法を説明す
る。まず、第１パツド３′１に第１ポンドζし、第１リ
ード３２に第２ボンドするが、従来法ではツールを上方
にひき〜上げて細線を切っていたため、３６に示す如く
ツールに残った細線先端は仮想線３９′の方を向いてい
た。一方本実施例では第２ボンド終了後、金属細線を仮
固定し、仮想線３９の方向即ち仮想ＩｆＭ４ｏと平行の
方向にツールを引きながら切断するため、ツールに残っ
た細線先端は仮想線３９の方向即ち仮想線４０と平行に
向いている。したがって次に第２パツド３３と第２リー
ド３４を金属細線で接続する際、細線先端は正しい方向
を向いていることになる。これをくシ返せば全周にわた
って先端に球を作ることなく、全方向ボンディングが可
能となる。
本発明の実施例として、素子側電極からリード側へ接続
する場合で説明したが、リード側から素子側電極へ接続
する場合も全く同様にしてボンディングできる。さらに
現在は全自動ワイヤボンディングが一般に採用されてお
り、１本先の接続の方向は容易に求めることができる。
さらに、本発明の方法は、金線を用いた超音波法、熱圧
着法。
超音波・熱圧着併用法、またアルミ線を用いた超音波法
いずれにも適用できる。
発明の効果 以上のように本発明は金属細線切断時にツールを次に接
続すべき金属細線の仮想線上に移動させて切断するため
、ツールに残った細線先端の方向が正しい向きとなり、
細線に球を作ることなく、全周ワイヤボンディングがで
きる。このことは装置の単純化だけでなく、細線先端に
球をつくらないために素子側バンドが小さくても良く間
隔も狭くて良い。従来２５０μｍ必要としていたピッチ
に比べ本方法では８０μｍピンチのボンディングが高速
で実現できることになる。
【図面の簡単な説明】
第１図（Ａ）　、　（Ｂ）はボンディング法を鮫、明す
るだめの図、第２図はアルミ線を用いた超音波ワイヤボ
ンディングを示す図、第３図は本発明の一実施例のボン
ディング方法を示す図である。 １・・・・・・チソグ載置部、２・・・・・・半導体素
子、３゜３２．３４・・・・外部リード、４，３１．３
３・・印パッド、６・・・・・金属細線、３６．３７・
・・・・・ボンディングツール、３９．３９’、４０・
・・・・・方向を示す仮想線。

Claims (3)

    【特許請求の範囲】
  1. （１）　　ボンディングツールから金属細線を出し半導
    体素子上の第１の電極と収納容器の第１のリードとを前
    記金属細線で接続した後、前記ボンディングツールを前
    記半導体素子上の第２の電極と前記収納容器の第２のリ
    ード先端とを結ぶ直線に平行に移動させて前記金属細線
    を切断し、次のボンディングサイクルに入ることを特徴
    とするボンディング方法。
  2. （２）先端圧接部が円形でその中央に貫通孔が設けられ
    ており、前記貫通孔よシ金属細線が供給されるボンディ
    ングツールを用いることを特徴とする特許請求の範囲第
    １項記載のボンディング方法。
  3. （３）　ボンディング終了後、ポンプイングツ賢ルが略
    水平方向に所定距離移動した後金属細線を仮固定し、前
    記金属細゛線が切断されることを特徴とす
JP57204070A 1982-11-19 1982-11-19 ボンデイング方法 Granted JPS5994431A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57204070A JPS5994431A (ja) 1982-11-19 1982-11-19 ボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204070A JPS5994431A (ja) 1982-11-19 1982-11-19 ボンデイング方法

Publications (2)

Publication Number Publication Date
JPS5994431A true JPS5994431A (ja) 1984-05-31
JPH0126532B2 JPH0126532B2 (ja) 1989-05-24

Family

ID=16484262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57204070A Granted JPS5994431A (ja) 1982-11-19 1982-11-19 ボンデイング方法

Country Status (1)

Country Link
JP (1) JPS5994431A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199846A (ja) * 1989-01-30 1990-08-08 Toshiba Corp ワイヤボンディング方法
WO2012157599A1 (ja) * 2011-05-17 2012-11-22 株式会社新川 ワイヤボンディング装置及びボンディング方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199846A (ja) * 1989-01-30 1990-08-08 Toshiba Corp ワイヤボンディング方法
WO2012157599A1 (ja) * 2011-05-17 2012-11-22 株式会社新川 ワイヤボンディング装置及びボンディング方法
JP2012256861A (ja) * 2011-05-17 2012-12-27 Shinkawa Ltd ワイヤボンディング装置及びボンディング方法
KR20140045358A (ko) * 2011-05-17 2014-04-16 가부시키가이샤 신가와 와이어본딩 장치 및 본딩 방법
TWI488243B (zh) * 2011-05-17 2015-06-11 Shinkawa Kk Threading device and joining method
US9337166B2 (en) 2011-05-17 2016-05-10 Shinkawa Ltd. Wire bonding apparatus and bonding method

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