JPS5989473A - 光電変換素子 - Google Patents

光電変換素子

Info

Publication number
JPS5989473A
JPS5989473A JP57200679A JP20067982A JPS5989473A JP S5989473 A JPS5989473 A JP S5989473A JP 57200679 A JP57200679 A JP 57200679A JP 20067982 A JP20067982 A JP 20067982A JP S5989473 A JPS5989473 A JP S5989473A
Authority
JP
Japan
Prior art keywords
conversion element
photoelectric conversion
amorphous silicon
electrodes
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57200679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6260819B2 (enExample
Inventor
Masaharu Ono
大野　雅晴
Masatoshi Kitagawa
雅俊 北川
Takashi Hirao
孝 平尾
Kunikazu Ozawa
小沢　邦一
Yasuhiro Goto
泰宏 後藤
Hiroki Nakase
中瀬　弘已
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57200679A priority Critical patent/JPS5989473A/ja
Publication of JPS5989473A publication Critical patent/JPS5989473A/ja
Publication of JPS6260819B2 publication Critical patent/JPS6260819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP57200679A 1982-11-15 1982-11-15 光電変換素子 Granted JPS5989473A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57200679A JPS5989473A (ja) 1982-11-15 1982-11-15 光電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57200679A JPS5989473A (ja) 1982-11-15 1982-11-15 光電変換素子

Publications (2)

Publication Number Publication Date
JPS5989473A true JPS5989473A (ja) 1984-05-23
JPS6260819B2 JPS6260819B2 (enExample) 1987-12-18

Family

ID=16428440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57200679A Granted JPS5989473A (ja) 1982-11-15 1982-11-15 光電変換素子

Country Status (1)

Country Link
JP (1) JPS5989473A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002549B2 (en) * 2001-01-18 2006-02-21 Mccahon Stephen William Optically based machine input control device
US7176542B2 (en) * 2004-04-22 2007-02-13 Hrl Lab Llc Photo induced-EMF sensor shield

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002549B2 (en) * 2001-01-18 2006-02-21 Mccahon Stephen William Optically based machine input control device
US7176542B2 (en) * 2004-04-22 2007-02-13 Hrl Lab Llc Photo induced-EMF sensor shield

Also Published As

Publication number Publication date
JPS6260819B2 (enExample) 1987-12-18

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