JPS5989428A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JPS5989428A
JPS5989428A JP58189537A JP18953783A JPS5989428A JP S5989428 A JPS5989428 A JP S5989428A JP 58189537 A JP58189537 A JP 58189537A JP 18953783 A JP18953783 A JP 18953783A JP S5989428 A JPS5989428 A JP S5989428A
Authority
JP
Japan
Prior art keywords
wire
connection terminal
external connection
capillary
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58189537A
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English (en)
Other versions
JPS6059735B2 (ja
Inventor
Naoto Kimura
直人 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
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Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP58189537A priority Critical patent/JPS6059735B2/ja
Publication of JPS5989428A publication Critical patent/JPS5989428A/ja
Publication of JPS6059735B2 publication Critical patent/JPS6059735B2/ja
Expired legal-status Critical Current

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    • HELECTRICITY
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    • H01L2224/05599Material
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    • H01L2224/05601Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05611Tin [Sn] as principal constituent
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/7828Resistance welding electrodes, i.e. for ohmic heating
    • H01L2224/78282Resistance welding electrodes, i.e. for ohmic heating in the upper part of the bonding apparatus, e.g. in the capillary or wedge
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    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 この発明は半導体装置の製造方法にかかシ、とくに半導
体素子の電極と外部端子とのワイヤボンディング方法に
関する。
半導体装置における素子電極と端子この間を結線するた
めにワイヤーボンディング方法が広く使用されている。
かかるワイヤーボンディング方法では金m1アルミ線等
をワイヤーとして用い、このワイヤーをキャビ2リーを
介して引き出し、ワイヤーの一端を素子電極に熱圧着さ
せた後、他端を外部端子に圧着させるものである。上記
キャピラリーはガラスあるいはタングステカーバイドか
ら作られたものが使用されていた。この方法で・は外部
端子との接続も圧着でなされるために、外部端子を金メ
ッキする必要があ#)、経済的にも好まL7いものでは
なかった。
本発明の目的はかかる従来技術の欠点を除去した有効な
半導体装置の製造方法な提供することである。
すなわち本発明の特徴は、半導体素子の電極とワイヤー
(!:金熟熱圧着接続し、このワイヤーを外部端子に電
気溶接で接続した半導体装置の製造方法にある。又、こ
の方法に用いられるキャピラリーは、内部をセラミック
等の絶縁材によって構成し、外部をキャピラリー先端に
いたるまで導電性材料によυ構成することが好ましい〇 このような本発明の方法によれば素子側電極への接続は
従来と同様に熱圧着で行なうが、外部端子との接続はキ
ャピラリーを介して電流を供給する電気スポット溶接が
可能となり、外部端子の金メッキが不要となる。
次に本発明の一実施例を図面を用いて説明する。
第1図に示すように、本発明の実施例に用いられるキャ
ピラリーは内部が絶縁材料であるセラミック1で作られ
、外部は導電材料であるタングステン2で作られている
。これら2種材料は任意の方法で接合され、先端部分は
同一面として形成されている。
第2図′(a) e (b)によシこのキャピラリイを
用いたボンディング方法を示す。半導体素子4側のボン
ディングは熱圧着にて行ない、さらに第2図(b)に示
すように外部端子5例のボンディングはキャピラリイの
導電材料のタングステン2に電流を流すことで金、!i
13を外部接続端子5に電気スポット溶接する。本実施
例においてキャピラリー内部にセラミック1をその材料
としたのは金線3がキャピラリー内を通るときに摩擦に
よって付着しにくくするためである。
以上の様に、この発明により半導体の内部接続を行なう
と次のような効果がある。
ベレット側ボンディングは従来通シ熱圧着で行なうが、
外部端子5側のボンディングは、電気スポット溶接で行
なうことによシ、外部接続端子5のボンディング面に金
メッキを施こす必要がなく直接スズメッキが行なえて、
このスズメッキ面に金線3を接合できる。
従りて、金メツキネ用となシコスト低減ができる。
【図面の簡単な説明】
第1図は本発明の実施例に用いるキャピラリイを示す断
面図、第2図(a) 、 (1,)は本発明の実施例を
示すもので第2図りはベレット側ボンディングの状態を
示す図、第2図(b)は外部端子側ボンディングの状態
を示す図である。 1絶縁材料(セラミック)、2導亀材料(タングステン
)、3金線、本ベレット、a外部接続端子0 ・ε′・・。 代理人 弁理士 内 原  (1,、晋・、・j/ 第1図 (U7 第2図

Claims (2)

    【特許請求の範囲】
  1. (1)半導体素子の電極とワイヤーとを熱圧着で接続し
    、該ワイヤーを外部端子に電気溶接で接続することf、
    特徴とする半導体装置の製造方法。
  2. (2)前記熱圧着および電気溶接の接続に用いられるキ
    ャピラリーは内部を絶縁材料、外部を導電金属で構成し
    たことを特徴とする特許請求の範囲第(1)項記載の半
    導体装置の製造方法。
JP58189537A 1983-10-11 1983-10-11 半導体装置の製造方法 Expired JPS6059735B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58189537A JPS6059735B2 (ja) 1983-10-11 1983-10-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58189537A JPS6059735B2 (ja) 1983-10-11 1983-10-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5989428A true JPS5989428A (ja) 1984-05-23
JPS6059735B2 JPS6059735B2 (ja) 1985-12-26

Family

ID=16242964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58189537A Expired JPS6059735B2 (ja) 1983-10-11 1983-10-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6059735B2 (ja)

Also Published As

Publication number Publication date
JPS6059735B2 (ja) 1985-12-26

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