JPS5984548A - 半導体装置の製造方法 - Google Patents

Info

Publication number

JPS5984548A

JPS5984548A JP19458082A JP19458082A JPS5984548A JP S5984548 A JPS5984548 A JP S5984548A JP 19458082 A JP19458082 A JP 19458082A JP 19458082 A JP19458082 A JP 19458082A JP S5984548 A JPS5984548 A JP S5984548A

Authority

JP

Japan

Prior art keywords

silicon

film

deposited

substrate

self

Prior art date

1982-11-08

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

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• 239000004065 semiconductor Substances 0.000 title claims abstract description 21
• 238000004519 manufacturing process Methods 0.000 title claims description 5
• 239000000758 substrate Substances 0.000 claims abstract description 27
• 239000004020 conductor Substances 0.000 claims abstract description 14
• 239000000463 material Substances 0.000 claims abstract description 5
• 239000010408 film Substances 0.000 claims description 84
• 238000009792 diffusion process Methods 0.000 claims description 20
• 239000012535 impurity Substances 0.000 claims description 15
• 238000000151 deposition Methods 0.000 claims description 13
• 238000005530 etching Methods 0.000 claims description 9
• 230000015572 biosynthetic process Effects 0.000 claims description 6
• 230000008021 deposition Effects 0.000 claims description 5
• 239000011810 insulating material Substances 0.000 claims description 5
• 238000007737 ion beam deposition Methods 0.000 claims description 3
• 238000000427 thin-film deposition Methods 0.000 claims description 2
• 230000001590 oxidative effect Effects 0.000 claims 1
• 229910052710 silicon Inorganic materials 0.000 abstract description 59
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 58
• 239000010703 silicon Substances 0.000 abstract description 58
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
• 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
• 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 7
• 238000000034 method Methods 0.000 description 21
• 238000000926 separation method Methods 0.000 description 6
• 230000000694 effects Effects 0.000 description 4
• 230000003647 oxidation Effects 0.000 description 4
• 238000007254 oxidation reaction Methods 0.000 description 4
• 238000000605 extraction Methods 0.000 description 3
• 238000010438 heat treatment Methods 0.000 description 3
• QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 2
• 229910016006 MoSi Inorganic materials 0.000 description 2
• 229910052581 Si3N4 Inorganic materials 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 230000010354 integration Effects 0.000 description 2
• 238000005468 ion implantation Methods 0.000 description 2
• 238000001755 magnetron sputter deposition Methods 0.000 description 2
• 239000002184 metal Substances 0.000 description 2
• 239000000203 mixture Substances 0.000 description 2
• 150000004767 nitrides Chemical class 0.000 description 2
• 238000000206 photolithography Methods 0.000 description 2
• 230000015556 catabolic process Effects 0.000 description 1
• 229940126214 compound 3 Drugs 0.000 description 1
• 230000007547 defect Effects 0.000 description 1
• 229910003460 diamond Inorganic materials 0.000 description 1
• 239000010432 diamond Substances 0.000 description 1
• ZGUQQOOKFJPJRS-UHFFFAOYSA-N lead silicon Chemical compound [Si].[Pb] ZGUQQOOKFJPJRS-UHFFFAOYSA-N 0.000 description 1
• 229910052750 molybdenum Inorganic materials 0.000 description 1
• 238000001020 plasma etching Methods 0.000 description 1
• 229920005591 polysilicon Polymers 0.000 description 1
• 229910021332 silicide Inorganic materials 0.000 description 1
• FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 238000000992 sputter etching Methods 0.000 description 1
• 230000035882 stress Effects 0.000 description 1
• 239000000126 substance Substances 0.000 description 1
• 230000008646 thermal stress Effects 0.000 description 1