JPS5984525A - 薄膜素子の製造方法 - Google Patents

薄膜素子の製造方法

Info

Publication number
JPS5984525A
JPS5984525A JP57194734A JP19473482A JPS5984525A JP S5984525 A JPS5984525 A JP S5984525A JP 57194734 A JP57194734 A JP 57194734A JP 19473482 A JP19473482 A JP 19473482A JP S5984525 A JPS5984525 A JP S5984525A
Authority
JP
Japan
Prior art keywords
gas
insulating film
thin film
plasma
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57194734A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430178B2 (enrdf_load_stackoverflow
Inventor
Yasuo Tanaka
靖夫 田中
Haruo Matsumaru
松丸　治男
Koichi Seki
浩一 関
Akira Sasano
笹野　晃
Toshihisa Tsukada
俊久 塚田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57194734A priority Critical patent/JPS5984525A/ja
Publication of JPS5984525A publication Critical patent/JPS5984525A/ja
Publication of JPH0430178B2 publication Critical patent/JPH0430178B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Facsimile Heads (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Light Receiving Elements (AREA)
JP57194734A 1982-11-08 1982-11-08 薄膜素子の製造方法 Granted JPS5984525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57194734A JPS5984525A (ja) 1982-11-08 1982-11-08 薄膜素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57194734A JPS5984525A (ja) 1982-11-08 1982-11-08 薄膜素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5984525A true JPS5984525A (ja) 1984-05-16
JPH0430178B2 JPH0430178B2 (enrdf_load_stackoverflow) 1992-05-21

Family

ID=16329340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57194734A Granted JPS5984525A (ja) 1982-11-08 1982-11-08 薄膜素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5984525A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295866A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd 受光素子の製造方法
JP2008135598A (ja) * 2006-11-29 2008-06-12 Casio Comput Co Ltd 薄膜トランジスタパネルの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295866A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd 受光素子の製造方法
JP2008135598A (ja) * 2006-11-29 2008-06-12 Casio Comput Co Ltd 薄膜トランジスタパネルの製造方法

Also Published As

Publication number Publication date
JPH0430178B2 (enrdf_load_stackoverflow) 1992-05-21

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