JPH0430178B2 - - Google Patents
Info
- Publication number
- JPH0430178B2 JPH0430178B2 JP57194734A JP19473482A JPH0430178B2 JP H0430178 B2 JPH0430178 B2 JP H0430178B2 JP 57194734 A JP57194734 A JP 57194734A JP 19473482 A JP19473482 A JP 19473482A JP H0430178 B2 JPH0430178 B2 JP H0430178B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- thin film
- film
- manufacturing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Facsimile Heads (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57194734A JPS5984525A (ja) | 1982-11-08 | 1982-11-08 | 薄膜素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57194734A JPS5984525A (ja) | 1982-11-08 | 1982-11-08 | 薄膜素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5984525A JPS5984525A (ja) | 1984-05-16 |
JPH0430178B2 true JPH0430178B2 (enrdf_load_stackoverflow) | 1992-05-21 |
Family
ID=16329340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57194734A Granted JPS5984525A (ja) | 1982-11-08 | 1982-11-08 | 薄膜素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5984525A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0712078B2 (ja) * | 1985-10-23 | 1995-02-08 | 株式会社日立製作所 | 受光素子の製造方法 |
JP5200366B2 (ja) * | 2006-11-29 | 2013-06-05 | カシオ計算機株式会社 | 薄膜トランジスタパネルおよびその製造方法 |
-
1982
- 1982-11-08 JP JP57194734A patent/JPS5984525A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5984525A (ja) | 1984-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4196438A (en) | Article and device having an amorphous silicon containing a halogen and method of fabrication | |
US4581099A (en) | Method for preparation of a photosensor | |
EP0403936A2 (en) | Method for producing a conductive oxide pattern | |
US5264077A (en) | Method for producing a conductive oxide pattern | |
JP4486622B2 (ja) | 太陽電池の製造方法 | |
JP3238003B2 (ja) | 太陽電池素子の製造方法 | |
JPH0430178B2 (enrdf_load_stackoverflow) | ||
JPH0766437A (ja) | 光電変換装置用基板の製造方法 | |
EP0008236B1 (en) | Process for forming tin oxide semiconductor heterojunction devices | |
EP0382632A2 (fr) | Substrat transparent électroconducteur à deux couches d'oxydes métalliques, utile notamment dans des dispositifs opto-électroniques | |
JPH0664935B2 (ja) | 透明導電膜およびその形成方法 | |
JPH0897190A (ja) | 透明導電性膜のドライエッチング方法 | |
EP0978883B1 (en) | Method of producing a solar cell device | |
JP2005167291A (ja) | 太陽電池の製造方法及び半導体装置の製造方法 | |
JP2001068709A (ja) | 薄膜太陽電池 | |
JP2771921B2 (ja) | 光起電力装置 | |
JP3272681B2 (ja) | 太陽電池の製造方法 | |
EP0290345A2 (fr) | Film électroconducteur pour élément photovoltaique | |
JP2873136B2 (ja) | 太陽電池素子の製造方法 | |
JP2854363B2 (ja) | 受光素子の製造方法 | |
JPS5868965A (ja) | 受光素子の製造方法 | |
JPH0258876A (ja) | 太陽電池用基板の製造方法、ならびに太陽電池 | |
KR950008855B1 (ko) | 포토 다이오드의 제조방법 | |
JPH06163974A (ja) | 半導体装置の製造方法 | |
JP3539748B2 (ja) | 半導体装置の製造方法 |