JPS5984461A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5984461A
JPS5984461A JP57193411A JP19341182A JPS5984461A JP S5984461 A JPS5984461 A JP S5984461A JP 57193411 A JP57193411 A JP 57193411A JP 19341182 A JP19341182 A JP 19341182A JP S5984461 A JPS5984461 A JP S5984461A
Authority
JP
Japan
Prior art keywords
layer
well
type
electrons
memory node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57193411A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0459782B2 (enrdf_load_stackoverflow
Inventor
Masaaki Aoki
正明 青木
Tatsu Toriyabe
達 鳥谷部
Takeshi Komoriya
小森谷 剛
Toshio Sasaki
敏夫 佐々木
Osamu Minato
湊 修
Toshiaki Masuhara
増原 利明
Shoji Hanamura
花村 昭次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57193411A priority Critical patent/JPS5984461A/ja
Publication of JPS5984461A publication Critical patent/JPS5984461A/ja
Publication of JPH0459782B2 publication Critical patent/JPH0459782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
JP57193411A 1982-11-05 1982-11-05 半導体装置 Granted JPS5984461A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57193411A JPS5984461A (ja) 1982-11-05 1982-11-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57193411A JPS5984461A (ja) 1982-11-05 1982-11-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS5984461A true JPS5984461A (ja) 1984-05-16
JPH0459782B2 JPH0459782B2 (enrdf_load_stackoverflow) 1992-09-24

Family

ID=16307508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57193411A Granted JPS5984461A (ja) 1982-11-05 1982-11-05 半導体装置

Country Status (1)

Country Link
JP (1) JPS5984461A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0222506A1 (en) * 1985-10-11 1987-05-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory
JPS62249474A (ja) * 1986-04-23 1987-10-30 Hitachi Ltd 半導体集積回路装置
KR100461888B1 (ko) * 2001-05-28 2004-12-14 미쓰비시덴키 가부시키가이샤 반도체 기억 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310984A (en) * 1976-07-17 1978-01-31 Mitsubishi Electric Corp Complementary type mos integrated circuit
JPS5389681A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Mis type semiconductor device
JPS5764962A (en) * 1980-10-09 1982-04-20 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310984A (en) * 1976-07-17 1978-01-31 Mitsubishi Electric Corp Complementary type mos integrated circuit
JPS5389681A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Mis type semiconductor device
JPS5764962A (en) * 1980-10-09 1982-04-20 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0222506A1 (en) * 1985-10-11 1987-05-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory
JPS62249474A (ja) * 1986-04-23 1987-10-30 Hitachi Ltd 半導体集積回路装置
KR100461888B1 (ko) * 2001-05-28 2004-12-14 미쓰비시덴키 가부시키가이샤 반도체 기억 장치
US6909135B2 (en) 2001-05-28 2005-06-21 Renesas Technology Corp. Semiconductor memory device

Also Published As

Publication number Publication date
JPH0459782B2 (enrdf_load_stackoverflow) 1992-09-24

Similar Documents

Publication Publication Date Title
US6500705B2 (en) Semiconductor memory device and method of manufacturing the same
US6342719B1 (en) Semiconductor device having a double-well structure and method for manufacturing the same
JPH0628298B2 (ja) Cmos fet及びその製造方法
JP3400891B2 (ja) 半導体記憶装置およびその製造方法
US6455904B1 (en) Loadless static random access memory device and method of manufacturing same
JPH0770685B2 (ja) 相補形mis半導体集積回路
US5950079A (en) Semiconductor processing methods of forming complementary metal oxide semiconductor memory and other circuitry
TW447131B (en) Vertical bipolar transistor based on gate induced drain leakage current
JPS5984461A (ja) 半導体装置
US6252269B1 (en) Semiconductor memory device
JPH05283626A (ja) 半導体集積回路装置
JPS6244861B2 (enrdf_load_stackoverflow)
JPH11297851A (ja) 静電放電保護回路を有する半導体素子
JPH0590588A (ja) 半導体装置及び半導体記憶装置
JPH0515069B2 (enrdf_load_stackoverflow)
KR940007660B1 (ko) 웰 보상층을 갖는 고전압 반도체소자
JP3070064B2 (ja) 半導体メモリ
JPS6043027B2 (ja) 相補形電界効果トランジスタによる集積回路装置の製造方法
JPH04151875A (ja) 二重拡散型mosトランジスタ
EP0138162A2 (en) CMOS structure
JPS58218159A (ja) 相補型mos半導体装置
JPH04234161A (ja) ダブルド―プされたチャネルストップ層を有する半導体装置およびその製造方法
JPH0513705A (ja) 半導体装置
JPH0322476A (ja) 半導体記憶装置
JP2510526B2 (ja) 半導体装置