JPS5980914A - 円板共振器 - Google Patents

円板共振器

Info

Publication number
JPS5980914A
JPS5980914A JP58173316A JP17331683A JPS5980914A JP S5980914 A JPS5980914 A JP S5980914A JP 58173316 A JP58173316 A JP 58173316A JP 17331683 A JP17331683 A JP 17331683A JP S5980914 A JPS5980914 A JP S5980914A
Authority
JP
Japan
Prior art keywords
layer
substrate
resonator according
base material
disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58173316A
Other languages
English (en)
Japanese (ja)
Inventor
フオルフガング・トルクスドルフ
ペテル・ロ−シユマン
デイエテル・マテイカ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5980914A publication Critical patent/JPS5980914A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP58173316A 1982-09-21 1983-09-21 円板共振器 Pending JPS5980914A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19823234853 DE3234853A1 (de) 1982-09-21 1982-09-21 Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial
DE32348533 1982-09-21

Publications (1)

Publication Number Publication Date
JPS5980914A true JPS5980914A (ja) 1984-05-10

Family

ID=6173715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58173316A Pending JPS5980914A (ja) 1982-09-21 1983-09-21 円板共振器

Country Status (5)

Country Link
JP (1) JPS5980914A (enrdf_load_stackoverflow)
DE (1) DE3234853A1 (enrdf_load_stackoverflow)
FR (1) FR2533373B1 (enrdf_load_stackoverflow)
GB (1) GB2127398B (enrdf_load_stackoverflow)
IT (1) IT1171085B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152605A (ja) * 1987-12-09 1989-06-15 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶
JPH01235316A (ja) * 1988-03-16 1989-09-20 Shin Etsu Chem Co Ltd マイクロ波素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837399A (enrdf_load_stackoverflow) * 1971-09-16 1973-06-01
JPS554996A (en) * 1978-06-22 1980-01-14 Rockwell International Corp Composite article and method of manufacturing same
JPS5632704A (en) * 1979-07-12 1981-04-02 Philips Nv Magnetic device with monocrystalline garnet substrate with magnetic layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728152A (en) * 1970-12-28 1973-04-17 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
US3788896A (en) * 1970-12-28 1974-01-29 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
FR2407610A1 (fr) * 1977-10-25 1979-05-25 Thomson Csf Dispositif d'interaction a ondes magnetoelastiques de surface
FR2447641A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Oscillateur accordable hyperfrequence a ondes magnetostatiques
DE2941994A1 (de) * 1979-10-17 1981-04-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung eines werkstoffes fuer resonanzfrequenzen oberhalb 100 mhz

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837399A (enrdf_load_stackoverflow) * 1971-09-16 1973-06-01
JPS554996A (en) * 1978-06-22 1980-01-14 Rockwell International Corp Composite article and method of manufacturing same
JPS5632704A (en) * 1979-07-12 1981-04-02 Philips Nv Magnetic device with monocrystalline garnet substrate with magnetic layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152605A (ja) * 1987-12-09 1989-06-15 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶
JPH01235316A (ja) * 1988-03-16 1989-09-20 Shin Etsu Chem Co Ltd マイクロ波素子

Also Published As

Publication number Publication date
IT1171085B (it) 1987-06-10
FR2533373A1 (fr) 1984-03-23
GB8324853D0 (en) 1983-10-19
DE3234853A1 (de) 1984-03-22
DE3234853C2 (enrdf_load_stackoverflow) 1993-02-11
FR2533373B1 (fr) 1988-11-18
GB2127398A (en) 1984-04-11
IT8322904A0 (it) 1983-09-16
GB2127398B (en) 1986-06-04
IT8322904A1 (it) 1985-03-16

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