DE3234853A1 - Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial - Google Patents
Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterialInfo
- Publication number
- DE3234853A1 DE3234853A1 DE19823234853 DE3234853A DE3234853A1 DE 3234853 A1 DE3234853 A1 DE 3234853A1 DE 19823234853 DE19823234853 DE 19823234853 DE 3234853 A DE3234853 A DE 3234853A DE 3234853 A1 DE3234853 A1 DE 3234853A1
- Authority
- DE
- Germany
- Prior art keywords
- formula
- substrate
- composition
- composition according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 55
- 239000000463 material Substances 0.000 title claims description 42
- 230000005293 ferrimagnetic effect Effects 0.000 title claims description 16
- 239000000203 mixture Substances 0.000 claims description 44
- 229910052733 gallium Inorganic materials 0.000 claims description 22
- 229910052782 aluminium Chemical group 0.000 claims description 18
- 239000002223 garnet Substances 0.000 claims description 16
- 229910052742 iron Inorganic materials 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 12
- 230000005291 magnetic effect Effects 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 10
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 2
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 32
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 4
- -1 iron ions Chemical class 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000005350 ferromagnetic resonance Effects 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000005292 diamagnetic effect Effects 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- MDPBAVVOGPXYKN-UHFFFAOYSA-N [Y].[Gd] Chemical group [Y].[Gd] MDPBAVVOGPXYKN-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823234853 DE3234853A1 (de) | 1982-09-21 | 1982-09-21 | Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial |
| GB08324853A GB2127398B (en) | 1982-09-21 | 1983-09-16 | Disc resonators |
| IT22904/83A IT1171085B (it) | 1982-09-21 | 1983-09-16 | Risonatore a disco |
| FR8314851A FR2533373B1 (fr) | 1982-09-21 | 1983-09-19 | Resonateur a disque presentant une couche de grenat epitaxiale et dispositif a micro-ondes muni d'un tel resonateur a disque |
| JP58173316A JPS5980914A (ja) | 1982-09-21 | 1983-09-21 | 円板共振器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823234853 DE3234853A1 (de) | 1982-09-21 | 1982-09-21 | Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3234853A1 true DE3234853A1 (de) | 1984-03-22 |
| DE3234853C2 DE3234853C2 (enrdf_load_stackoverflow) | 1993-02-11 |
Family
ID=6173715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823234853 Granted DE3234853A1 (de) | 1982-09-21 | 1982-09-21 | Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5980914A (enrdf_load_stackoverflow) |
| DE (1) | DE3234853A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2533373B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2127398B (enrdf_load_stackoverflow) |
| IT (1) | IT1171085B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2763040B2 (ja) * | 1987-12-09 | 1998-06-11 | 信越化学工業株式会社 | 酸化物ガーネット単結晶 |
| JPH0658845B2 (ja) * | 1988-03-16 | 1994-08-03 | 信越化学工業株式会社 | マイクロ波素子 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2121045A5 (enrdf_load_stackoverflow) * | 1970-12-28 | 1972-08-18 | North American Rockwell | |
| US4209759A (en) * | 1977-10-25 | 1980-06-24 | Thomson-Csf | Magnetoelastic surface wave interaction device |
| EP0014115A2 (fr) * | 1979-01-26 | 1980-08-06 | Thomson-Csf | Oscillateur accordable hyperfréquence à ondes magnétostatiques |
| DE2941994A1 (de) * | 1979-10-17 | 1981-04-30 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung eines werkstoffes fuer resonanzfrequenzen oberhalb 100 mhz |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3788896A (en) * | 1970-12-28 | 1974-01-29 | North American Rockwell | Method for producing bubble domains in magnetic film-substrate structures |
| JPS4837399A (enrdf_load_stackoverflow) * | 1971-09-16 | 1973-06-01 | ||
| US4263374A (en) * | 1978-06-22 | 1981-04-21 | Rockwell International Corporation | Temperature-stabilized low-loss ferrite films |
| DE2928176A1 (de) * | 1979-07-12 | 1981-01-29 | Philips Patentverwaltung | Einkristall auf der basis von seltenerdmetall-gallium-granat |
-
1982
- 1982-09-21 DE DE19823234853 patent/DE3234853A1/de active Granted
-
1983
- 1983-09-16 GB GB08324853A patent/GB2127398B/en not_active Expired
- 1983-09-16 IT IT22904/83A patent/IT1171085B/it active
- 1983-09-19 FR FR8314851A patent/FR2533373B1/fr not_active Expired
- 1983-09-21 JP JP58173316A patent/JPS5980914A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2121045A5 (enrdf_load_stackoverflow) * | 1970-12-28 | 1972-08-18 | North American Rockwell | |
| US4209759A (en) * | 1977-10-25 | 1980-06-24 | Thomson-Csf | Magnetoelastic surface wave interaction device |
| EP0014115A2 (fr) * | 1979-01-26 | 1980-08-06 | Thomson-Csf | Oscillateur accordable hyperfréquence à ondes magnétostatiques |
| DE2941994A1 (de) * | 1979-10-17 | 1981-04-30 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung eines werkstoffes fuer resonanzfrequenzen oberhalb 100 mhz |
Non-Patent Citations (2)
| Title |
|---|
| Applied Physics Letters 35(4), 1979, S. 352-354 * |
| Derwent-Referat Nr. 74-40492 der JP 74-40 492 V * |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1171085B (it) | 1987-06-10 |
| FR2533373A1 (fr) | 1984-03-23 |
| GB8324853D0 (en) | 1983-10-19 |
| DE3234853C2 (enrdf_load_stackoverflow) | 1993-02-11 |
| FR2533373B1 (fr) | 1988-11-18 |
| GB2127398A (en) | 1984-04-11 |
| IT8322904A0 (it) | 1983-09-16 |
| GB2127398B (en) | 1986-06-04 |
| JPS5980914A (ja) | 1984-05-10 |
| IT8322904A1 (it) | 1985-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |