FR2533373B1 - Resonateur a disque presentant une couche de grenat epitaxiale et dispositif a micro-ondes muni d'un tel resonateur a disque - Google Patents

Resonateur a disque presentant une couche de grenat epitaxiale et dispositif a micro-ondes muni d'un tel resonateur a disque

Info

Publication number
FR2533373B1
FR2533373B1 FR8314851A FR8314851A FR2533373B1 FR 2533373 B1 FR2533373 B1 FR 2533373B1 FR 8314851 A FR8314851 A FR 8314851A FR 8314851 A FR8314851 A FR 8314851A FR 2533373 B1 FR2533373 B1 FR 2533373B1
Authority
FR
France
Prior art keywords
disc resonator
grenate
epitaxial
layer
device provided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8314851A
Other languages
English (en)
French (fr)
Other versions
FR2533373A1 (fr
Inventor
Wolfgang Tolksdorf
Peter Roschmann
Dieter Mateika
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2533373A1 publication Critical patent/FR2533373A1/fr
Application granted granted Critical
Publication of FR2533373B1 publication Critical patent/FR2533373B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FR8314851A 1982-09-21 1983-09-19 Resonateur a disque presentant une couche de grenat epitaxiale et dispositif a micro-ondes muni d'un tel resonateur a disque Expired FR2533373B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823234853 DE3234853A1 (de) 1982-09-21 1982-09-21 Scheibenresonator mit einem substrat aus einem granatmaterial und mit einer auf dem substrat angebrachten epitaxialen schicht aus einem ferrimagnetischen granatmaterial

Publications (2)

Publication Number Publication Date
FR2533373A1 FR2533373A1 (fr) 1984-03-23
FR2533373B1 true FR2533373B1 (fr) 1988-11-18

Family

ID=6173715

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8314851A Expired FR2533373B1 (fr) 1982-09-21 1983-09-19 Resonateur a disque presentant une couche de grenat epitaxiale et dispositif a micro-ondes muni d'un tel resonateur a disque

Country Status (5)

Country Link
JP (1) JPS5980914A (enrdf_load_stackoverflow)
DE (1) DE3234853A1 (enrdf_load_stackoverflow)
FR (1) FR2533373B1 (enrdf_load_stackoverflow)
GB (1) GB2127398B (enrdf_load_stackoverflow)
IT (1) IT1171085B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2763040B2 (ja) * 1987-12-09 1998-06-11 信越化学工業株式会社 酸化物ガーネット単結晶
JPH0658845B2 (ja) * 1988-03-16 1994-08-03 信越化学工業株式会社 マイクロ波素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728152A (en) * 1970-12-28 1973-04-17 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
US3788896A (en) * 1970-12-28 1974-01-29 North American Rockwell Method for producing bubble domains in magnetic film-substrate structures
JPS4837399A (enrdf_load_stackoverflow) * 1971-09-16 1973-06-01
FR2407610A1 (fr) * 1977-10-25 1979-05-25 Thomson Csf Dispositif d'interaction a ondes magnetoelastiques de surface
US4263374A (en) * 1978-06-22 1981-04-21 Rockwell International Corporation Temperature-stabilized low-loss ferrite films
FR2447641A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Oscillateur accordable hyperfrequence a ondes magnetostatiques
DE2928176A1 (de) * 1979-07-12 1981-01-29 Philips Patentverwaltung Einkristall auf der basis von seltenerdmetall-gallium-granat
DE2941994A1 (de) * 1979-10-17 1981-04-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung eines werkstoffes fuer resonanzfrequenzen oberhalb 100 mhz

Also Published As

Publication number Publication date
IT1171085B (it) 1987-06-10
FR2533373A1 (fr) 1984-03-23
GB8324853D0 (en) 1983-10-19
DE3234853A1 (de) 1984-03-22
DE3234853C2 (enrdf_load_stackoverflow) 1993-02-11
GB2127398A (en) 1984-04-11
IT8322904A0 (it) 1983-09-16
GB2127398B (en) 1986-06-04
JPS5980914A (ja) 1984-05-10
IT8322904A1 (it) 1985-03-16

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Legal Events

Date Code Title Description
ST Notification of lapse