US3728152A - Method for producing bubble domains in magnetic film-substrate structures - Google Patents

Method for producing bubble domains in magnetic film-substrate structures Download PDF

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US3728152A
US3728152A US00101786A US3728152DA US3728152A US 3728152 A US3728152 A US 3728152A US 00101786 A US00101786 A US 00101786A US 3728152D A US3728152D A US 3728152DA US 3728152 A US3728152 A US 3728152A
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film
substrate
garnet
constant
iron
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J Mee
P Besser
P Elkins
G Pulliam
D Heinz
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Boeing North American Inc
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    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
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    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
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    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
    • C01P2004/86—Thin layer coatings, i.e. the coating thickness being less than 0.1 time the particle radius
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Definitions

  • a method for producing a bubble domain in a magnetic single crystal garnet film-substrate structure involves the epitaxial deposition of an iron garnet film of the proper crystallographic orientation and having a negative magnetostriction constant on a garnet substrate in which the room temperature lattice consant of the substrate is larger than the room temperaure lattice constant of the film, preferably by an amount less than 0.016 angstrom.
  • This invention relates to bubble domains and more particularly to a method of forming a craze-free film having bubble domains therein.
  • bubble domain composite single crystal film-substrate structures reported in the prior art have had crazing, that is cracking, of the film, making them unsuitable for certain types of bubble domain device applications.
  • Other iron garnet film-substrate structures were observed to have domains whose magnetization directions are in the plane of the film in contrast to the desired bubble domains whose magnetization directions are perpendicular to the plane of the film.
  • a specific step in the method involves depositing a single crystal iron garnet film of the proper crystallographic and having a negative magnetostriction constant on a substrate in which the room temperature lattice constant of the substrate is larger than the room temperature lattice constant of the film preferably by an amount less han 0.016 angstrom.
  • An example of a preferred embodiment in accordance with this invention is to chemically vapor deposit a gal- 3,728,152 Patented Apr. 17, 1973 BRIEF DESCRIPTION OF THE DRAWING
  • the drawing shows a magnetic bubble domain filmsubstrate structure made in accordance with the method of this invention.
  • This invention involves a process in which a single crystal iron garnet material is chemically vapor deposited to form a film on a substrate. It is necessary that the single crystal material have the proper crystallographic orientation to take advantage of the negative magnetostriction.
  • the room lattice constant of the substrate is larger than the room lattice constant of the deposited film, preferably by an amount less than 0.016 angstrom.
  • the resultant film-substrate structure has a craze-free film with bubble domains therein.
  • the normal source of uniaxial anisotropy observed in magnetic materials is the crystal structure of the material.
  • the magnetostriction contribution tends to make the normal to the plane of the platelet an easy axis of magnetization if the platelet is in tension (r.r and a hard axis if the platelet is in compression (a U)
  • ⁇ and h are the saturation values of the linear magnetostriction constants along the l00 and 111 directions, respectively, and 0' is the stress in the plane of the material.
  • the room temperature magnetostriction constants of selected iron garnet are listed in the following table.
  • Magnetostrietion constant Iron garnet M00 (X10 X111 (X10).
  • Tb3FC5O 2 and Yb Fe O have both a negative and a positive magnetostriction constant.
  • the crystallographic orientation of the garnet film must be chosen to take advantage of the negative magnetostriction constant. In the case with Tb Fe O material, the orientation would be With the Yb Fe O material, the orientation would be ⁇ 111 ⁇ .
  • the values of the magnetostriction constants of the iron garnet material, as well as its magnetization, can be varied by depositing a film containing a mixture of two or more pure iron garnets and/or by substituting other cations for iron ions.
  • the dominant source of uni- A preferred substrate material is mixed yttrium-gadolinium gallium garnet when the film material is gallium substituted yttrium iron garnet.
  • an iron garnet film of the proper orientation and having a negative magnetoaxial anistotropy 1s the magnetostrictive effect resulting striction constant is deposited on a garnet substrate in from the stress existing in the film.
  • This stress is due to which the room temperature lattice constant of the subthe difference between the lattice constants and the thermal Strate is larger than the room temperature lattiee Constant expansion coefficients of the film and substrate and may of the Preferably y all amount less than -016 be in the form of t i o compression, angstrom.
  • the Preferred difierehees crystal garnet fil f th Proper i t ti d h i a tween the lattice constants is of the order of 0.005 to negative magnetrostriction constant on a substrate in 0-010 ahgstrom-
  • the lattiee constant difference is which th fil i i t i 0.016 angstrom or more, the tension or stress is so great
  • the film 12 may be deposthemtal expaneloni h Proper Stress neeesaary for bubble ited by sputtering techniques or by a liquid phase epitaxial domam formatlon W111 not be achieved- PI'OCCSS.
  • the substrate 10 is monocrystalline garnet having a I Q O formulation wherein the J constituent of the A ⁇ 111 ⁇ gallium substltuted yttnum Iron garnet Wafer formulation is at least one element selected from 40 the group consisting of cerium, praseodymium, neodymium, promethium, Samarium, europium, gadolinium, having a lattice constant of 12.357 angstroms was deterbium dysprosium, holmium, erbium, thulium, yetterposited 011 a mixed yttrium-gadolinium gallium garnet, bium, lutetium, lanthanum, yttrium, calcium, bismuth; 2.7 0,a 5O by chemical vapor deposition techniques.
  • the Q constituent of the wafer formulation is at least The lattieeeehstaht 0f the mixed yttrium-gadolinium one element selected from the group consisting of indium, hum garnet Was Whieh eXeeeded t Of the fi m gallium, scandium, titanium, vanadium, chromium, by 0-010 ahgstrom-
  • the resultant Structure had a Crazemanganese, rhodium, zirconium, hafnium, niobium, tantar m W h had bu le d mains therein.
  • Examples of substrate materials are mixed yttriumgadolinium gallium garnet, gadolinium gallium garnet, Examples I-V are listed below in the following able. aluminum substituted gadolinium gallium garnet, terbium In Example II, a gallium substituted yttrium iron garnet gallium garnet, and dysprosium gallium garnet. film was deposited in accordance with this invention on The film of the bubble domain material is a single a gadolinium gallium garnet in which the substrate lattice crystal garnet film having a J Q O formulation wherein constant exceeded the film lattice constant at room temthe I constituent of the film formulation has at least one perature by 0.019.
  • This structure had bubble domains in element selected from the group of cerium, praseodymium, the film and also had crazing on the film surface making neodymium, promethium, samarium, gadolinium, terbium, it less useful for certain applications.
  • Examples III, IV dysprosium, holmium, erbium, thulium, ytterbium, lutetiand V were the gallium substituted yttrium iron garnet um, lanthanum and yttrium; the Q constituent of the film films on different substrates in which the film lattice conformulation is taken from the group consisting of iron, stant exceeded the substrate lattice constant by less than iron and aluminum, iron and gallium, iron and indium, 0.035 angstrom.
  • these films were in compresiron and scandium, iron and titanium, iron and vanadium, sion and there were no bubble domains, only domains iron and chromium, and iron and manganese. whose magnetization lies inthe plane.
  • a methodof producing a bubble domain containing single crystal iron garnet film-substrate structure comprising the step of depositing an iron garnet film of the proper crystallographic orientation and having a negative magnetostriction constant on a substrate in which the substrate has a room temperature lattice constant which exceeds the room temperature lattice constant of the iron garnet film, by an amount less than .016 angstrom.
  • a method of producing a bubble domain containing film-substrate structure comprising the steps of depositing a yttrium iron garnet film of the proper crystallographic orientation and having a negative magnetostriction constant on a substrate in Which the substrate has a room temperature lattice constant which exceeds the room temperature lattice constant of said film by an amount less than 0.016 angstrom.

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Abstract

A METHOD FOR PRODUCING A BUBVBLE COMAIN IN A MAGNETIC SINGLE CRYSTAL GARNET FILM-SUBSTRATE STRUCTURE IS DISCLOSED. THE METHOD INVOLVES THE EPITAXIAL DEPOSITION OF AN IRON GARNET FILM OF THE PROPER CRYSTALLOGRAPHIC ORIENTATION AND HAVING A NEGATIVE MAGNETOSTRICTION CONSTANT ON A GARNET SUBSTRATE IN WHICH THE ROOM TEMPERATURE LATTICE CONSTANT OF THE SUBSTRATE IS LARGER THAN THE ROOM TEMPERAURE LATTICE CONSTANT OF THE FILM, PREFERABLY BY AN AMOUNT LESS THAN 0.016 ANGSTROM.

Description

April 17, 1973 J. E. MEE E AL 5 METHOD FOR PRODUCING BUBBLE DOMAINS IN MAGNETIC FILM-SUBSTRATE STRUCTURES Filed Dec. 28, 1970 INVENTORS gm E. E5
United States Patent O 3,728,152 METHOD FOR PRODUCING BUBBLE DOMAINS IN MAGNETIC FILM-SUBSTRATE STRUCTURES Jack E. Mee, Paul .I. Besser, George R. Pulliam, David M. Heinz, and Perry E. Elkins, Orange County, Calif., assignors to North American Rockwell Corporation, El Segundo, Calif.
Filed Dec. 28, 1970, Ser. No. 101,786 Int. Cl. Hlllf 10/02 US. Cl. 117235 5 Claims ABSTRACT OF THE DISCLOSURE A method for producing a bubble domain in a magnetic single crystal garnet film-substrate structure is disclosed. The method involves the epitaxial deposition of an iron garnet film of the proper crystallographic orientation and having a negative magnetostriction constant on a garnet substrate in which the room temperature lattice consant of the substrate is larger than the room temperaure lattice constant of the film, preferably by an amount less than 0.016 angstrom.
BACKGROUND OF THE INVENTION (1) Field of the invention This invention relates to bubble domains and more particularly to a method of forming a craze-free film having bubble domains therein.
(2) Description of prior art Magnetic bubble domains in a sheet of magnetic medium, such as yttrium orthoferrite, are well known in the art and are described in US. Pat. No. 3,460,116 and others. Magnetic bubble domains in composite structures having a thin film of a single crystal iron garnet on an oxide substrate are disclosed in the copending patent applications to Mee et al., US. Ser. Nos. 16,446 and now US. Pat. No. 3,645,788 and 16,447, filed Mar. 4, 1970. These copending patent applications are incorporated herewith.
Some of the bubble domain composite single crystal film-substrate structures reported in the prior art have had crazing, that is cracking, of the film, making them unsuitable for certain types of bubble domain device applications. Other iron garnet film-substrate structures were observed to have domains whose magnetization directions are in the plane of the film in contrast to the desired bubble domains whose magnetization directions are perpendicular to the plane of the film.
SUMMARY OF THE INVENTION It is a primary objectof this invention to provide an improved method of forming a single crystal iron garnet film-substrate structure having bubble domains therein.
It is another object of this invention to provide a method of forming a bubble domain film-substrate structure having a craze-free film surface.
These and other objects of this invention are accomplished by a method in which the uniaxial anisotropy necessary for bubble domain formation in a craze-free film-substrate structure is affected by proper control of the mechanical stress present in the film at room temperature. A specific step in the method involves depositing a single crystal iron garnet film of the proper crystallographic and having a negative magnetostriction constant on a substrate in which the room temperature lattice constant of the substrate is larger than the room temperature lattice constant of the film preferably by an amount less han 0.016 angstrom.
An example of a preferred embodiment in accordance With this invention is to chemically vapor deposit a gal- 3,728,152 Patented Apr. 17, 1973 BRIEF DESCRIPTION OF THE DRAWING The drawing shows a magnetic bubble domain filmsubstrate structure made in accordance with the method of this invention.
DETAILED DESCRIPTION OF THE INVENTION This invention involves a process in which a single crystal iron garnet material is chemically vapor deposited to form a film on a substrate. It is necessary that the single crystal material have the proper crystallographic orientation to take advantage of the negative magnetostriction. In addition the room lattice constant of the substrate is larger than the room lattice constant of the deposited film, preferably by an amount less than 0.016 angstrom. The resultant film-substrate structure has a craze-free film with bubble domains therein.
In general, the normal source of uniaxial anisotropy observed in magnetic materials is the crystal structure of the material. [When single crystal platelets with negative magnetostriction constants (li x 0 are under stress, the magnetostriction contribution tends to make the normal to the plane of the platelet an easy axis of magnetization if the platelet is in tension (r.r and a hard axis if the platelet is in compression (a U))\ and h are the saturation values of the linear magnetostriction constants along the l00 and 111 directions, respectively, and 0' is the stress in the plane of the material.
The room temperature magnetostriction constants of selected iron garnet are listed in the following table.
Magnetostrietion constant Iron garnet M00 (X10 X111 (X10 Some of these iron garnet materials, for example Tb3FC5O 2 and Yb Fe O have both a negative and a positive magnetostriction constant. In the practice of this invention the crystallographic orientation of the garnet film must be chosen to take advantage of the negative magnetostriction constant. In the case with Tb Fe O material, the orientation would be With the Yb Fe O material, the orientation would be {111}.
The values of the magnetostriction constants of the iron garnet material, as well as its magnetization, can be varied by depositing a film containing a mixture of two or more pure iron garnets and/or by substituting other cations for iron ions.
It is understood that whether there is mixing and/or substitution or not, the condition for bubble domain formation in the iron garnet material, H /41rM 1, has to be satisfied, where H is the uniaxial anistotropy field and 41rM is the magnetization.
In magnetic oxide film-substrate structures formed by chemical vapor deposition, the dominant source of uni- A preferred substrate material is mixed yttrium-gadolinium gallium garnet when the film material is gallium substituted yttrium iron garnet.
In accordance with this invention, an iron garnet film of the proper orientation and having a negative magnetoaxial anistotropy 1s the magnetostrictive effect resulting striction constant is deposited on a garnet substrate in from the stress existing in the film. This stress is due to which the room temperature lattice constant of the subthe difference between the lattice constants and the thermal Strate is larger than the room temperature lattiee Constant expansion coefficients of the film and substrate and may of the Preferably y all amount less than -016 be in the form of t i o compression, angstrom. When the substrate lattice constant exceeds the This i venti ifi ll covers a th d f f i film lattice constant, the film is in tension and bubble a bubble domain structure by depositing a magnetic single domains are Present thereih- The Preferred difierehees crystal garnet fil f th Proper i t ti d h i a tween the lattice constants is of the order of 0.005 to negative magnetrostriction constant on a substrate in 0-010 ahgstrom- When the lattiee constant difference is which th fil i i t i 0.016 angstrom or more, the tension or stress is so great A eopending li i to M et 1 that there is crazing or cracking of the film. When the sub- 101,785, f l d D 28, 1970, covers a h d of fo min strate lattice constant is smaller than the film lattice cona bubble domain structure by depositing a magnetic single Staht by an amount less than about 0935 angstrom, the crystal garnet film of the proper orientation and having film is in compression and there are he b e d s a positive magnetostriction constant on a substrate in shlee h normal to Plane of the film is the hard maghetiZawhi h th fil i i compression tron axis and the domain magnetizations lie in the plane.
A copending li ti to M l l S N 1011 7 As previously discussed, the difference in the coefficients fil d D 23, 1970, covers a Second method f f mi of thermal expansion between the film and the substrate abubble domain structure by depositing amagnetic single contributes to the total Stress P in the The crystal garnet fil f the Propelerientafien and having thermal expansion stress contribution is within acceptable 3 negative magnetostriction constant on a substrate in limits as long as the coeflicient of thermal expansion of the hi h h fil i i i substrate is the same as or lower than that of the fih'n by As shown in the drawing, an oxide substrate 10 is suban amount not more than X betWeell C- j t d ef ably to a chemical vapor deposition Step to and 1200 C. A certain amount of mismatch between filmid a hi fil f magnetic bubble domain material, substrate room temperature lattice constants and/or fil 12, T deposition Step is carried out in accordance thermal expansion characteristics is required in order to i h h copending application, 833,268 filed provide the stress which produces the uniaxial anisotropy J 16 1969 and assigned to the assighees f the present necessary for bubble domain formation. If film and subinvention. This pending patent application is incorporat d strate are too closely matched in both lattice constant and herewith by reference hereto. The film 12 may be deposthemtal expaneloni h Proper Stress neeesaary for bubble ited by sputtering techniques or by a liquid phase epitaxial domam formatlon W111 not be achieved- PI'OCCSS. EXAMPLE I The substrate 10 is monocrystalline garnet having a I Q O formulation wherein the J constituent of the A {111} gallium substltuted yttnum Iron garnet Wafer formulation is at least one element selected from 40 the group consisting of cerium, praseodymium, neodymium, promethium, Samarium, europium, gadolinium, having a lattice constant of 12.357 angstroms was deterbium dysprosium, holmium, erbium, thulium, yetterposited 011 a mixed yttrium-gadolinium gallium garnet, bium, lutetium, lanthanum, yttrium, calcium, bismuth; 2.7 0,a 5O by chemical vapor deposition techniques. and the Q constituent of the wafer formulation is at least The lattieeeehstaht 0f the mixed yttrium-gadolinium one element selected from the group consisting of indium, hum garnet Was Whieh eXeeeded t Of the fi m gallium, scandium, titanium, vanadium, chromium, by 0-010 ahgstrom- The resultant Structure had a Crazemanganese, rhodium, zirconium, hafnium, niobium, tantar m W h had bu le d mains therein. lum, aluminum, phosphorous, arsenic and antimony. EXAMPLES Examples of substrate materials are mixed yttriumgadolinium gallium garnet, gadolinium gallium garnet, Examples I-V are listed below in the following able. aluminum substituted gadolinium gallium garnet, terbium In Example II, a gallium substituted yttrium iron garnet gallium garnet, and dysprosium gallium garnet. film was deposited in accordance with this invention on The film of the bubble domain material is a single a gadolinium gallium garnet in which the substrate lattice crystal garnet film having a J Q O formulation wherein constant exceeded the film lattice constant at room temthe I constituent of the film formulation has at least one perature by 0.019. This structure had bubble domains in element selected from the group of cerium, praseodymium, the film and also had crazing on the film surface making neodymium, promethium, samarium, gadolinium, terbium, it less useful for certain applications. Examples III, IV dysprosium, holmium, erbium, thulium, ytterbium, lutetiand V were the gallium substituted yttrium iron garnet um, lanthanum and yttrium; the Q constituent of the film films on different substrates in which the film lattice conformulation is taken from the group consisting of iron, stant exceeded the substrate lattice constant by less than iron and aluminum, iron and gallium, iron and indium, 0.035 angstrom. As a result, these films were in compresiron and scandium, iron and titanium, iron and vanadium, sion and there were no bubble domains, only domains iron and chromium, and iron and manganese. whose magnetization lies inthe plane.
TABLE Film Subtrate Substrate lattice constant- In-Plane Grazing Example Lattice con- Lattice confilm lattice Bubble vector on film No. Material b stant, A. Substrate material stem, A. constant, A. domain domains surface Stress I YaGai-zFea-sOm 12.357 Gdz-7Y Ga5O1z Yes N0 None. Tension II.-- YsGarzFea-aom 12.357 GdsGasOm III mom-tremors 12.357 GdeAlwGar-lon Compresslon; IV" YaGar-zFea'aou 12.357 TbgGason D0- V YaGai-zFea-soia 12.357 Dy Ga Oiz D0- 5 At room temperature.
b 111 orientation, negative magnetostriction constant: e 111 orientation.
What is claimed is:
1. A methodof producing a bubble domain containing single crystal iron garnet film-substrate structure comprising the step of depositing an iron garnet film of the proper crystallographic orientation and having a negative magnetostriction constant on a substrate in which the substrate has a room temperature lattice constant which exceeds the room temperature lattice constant of the iron garnet film, by an amount less than .016 angstrom.
2. A method as described in claim 1 whereby the room temperature lattice constant oft he substrate exceeds the room temperature lattice constant of the film by an amount between 0.005 and 0.010 angstrom.
3. A method as described in claim 1 whereby said film is deposited by a chemical vapor deposition technique.
4. A method of producing a bubble domain containing film-substrate structure comprising the steps of depositing a yttrium iron garnet film of the proper crystallographic orientation and having a negative magnetostriction constant on a substrate in Which the substrate has a room temperature lattice constant which exceeds the room temperature lattice constant of said film by an amount less than 0.016 angstrom.
5. A method as described in claim 4 whereby said substrate is a mixed yttrium-gadolinium gallium garnet.
References Cited UNITED STATES PATENTS 3,525,638 8/1970 Archey 117107.1 X 3,486,937 12/1969 Linares 117235 X 3,429,740 2/1969 Mee 117-235 X 3,131,082 4/1964 Gambino 117-235 3,573,099 3/1971 Moore et a1 117235 X 3,645,787 2/ 1972 Mee et all. 117--239 3,645,788 2/1972 Mee et a1. 117-235 3,617,381 11/1971 Hanak 117235 OTHER REFERENCES Giess et aL: IBM Tech. Dis. BulL, p. 517, 117-235, vol. 13, N0. 2, July 1970.
WILLIAM D. MARTIN, Primary Examiner Bv D. PIANALTO, Assistant Examiner US. Cl. X.R. 117-106 R V UNITED STATES PATENT OFFICE CERTIFICATE OF CORRECTION Patent No. 3,728,152 Dated April 17', 1973 It is certified that error appears in the above-identified. patent and that said Letters Patent are hereby corrected as shown below:
.lolrmn 2, line 1.;2, v "garnet should read garnets Column 3, line 22, "101.787 should read 101,787
Column 5', claim 2, line 11, "oft he" should read Signed and sealed this 21st day of May 1971+.
(SEAL) Attest:
EDWARD I -LFLETCZEJR, J R. C MAR HALL DAHN Attesting Officer Commissioner of Patents USCOMM-DC 60376-P69 wu.s. eovznunzm' PRINTING omc: is o-su-su,
FORM PO-105O (IO-69)
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Publication number Priority date Publication date Assignee Title
US3946124A (en) * 1970-03-04 1976-03-23 Rockwell International Corporation Method of forming a composite structure
US4001793A (en) * 1973-07-02 1977-01-04 Rockwell International Corporation Magnetic bubble domain composite with hard bubble suppression

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NL7902293A (en) * 1979-03-23 1980-09-25 Philips Nv MAGNETIC FIELD DOMAIN STRUCTURE AND MAGNETIC FIELD DOMAIN.
EP0023063B1 (en) * 1979-07-12 1982-10-13 Philips Patentverwaltung GmbH A single crystal of rare earths-gallium-garnet and thin film arrangement with a single garnet substrate
DE3234853A1 (en) * 1982-09-21 1984-03-22 Philips Patentverwaltung Gmbh, 2000 Hamburg DISC RESONATOR WITH A SUBSTRATE FROM A GRANATE MATERIAL AND WITH AN EPITAXIAL LAYER APPLIED ON THE SUBSTRATE FROM A FERRIMAGNETIC GRANATE MATERIAL

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946124A (en) * 1970-03-04 1976-03-23 Rockwell International Corporation Method of forming a composite structure
US4001793A (en) * 1973-07-02 1977-01-04 Rockwell International Corporation Magnetic bubble domain composite with hard bubble suppression

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