JPS5973490A - 結晶製造方法 - Google Patents

結晶製造方法

Info

Publication number
JPS5973490A
JPS5973490A JP57183959A JP18395982A JPS5973490A JP S5973490 A JPS5973490 A JP S5973490A JP 57183959 A JP57183959 A JP 57183959A JP 18395982 A JP18395982 A JP 18395982A JP S5973490 A JPS5973490 A JP S5973490A
Authority
JP
Japan
Prior art keywords
crystal
raw material
windows
sphere
concave mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57183959A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0135798B2 (enrdf_load_stackoverflow
Inventor
Kazufumi Ogawa
一文 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57183959A priority Critical patent/JPS5973490A/ja
Priority to DE8383302154T priority patent/DE3364653D1/de
Priority to EP83302154A priority patent/EP0092405B1/en
Priority to US06/485,506 priority patent/US4522680A/en
Publication of JPS5973490A publication Critical patent/JPS5973490A/ja
Publication of JPH0135798B2 publication Critical patent/JPH0135798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/005—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method by irradiation or electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/121—Coherent waves, e.g. laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/061—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP57183959A 1982-04-15 1982-10-19 結晶製造方法 Granted JPS5973490A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57183959A JPS5973490A (ja) 1982-10-19 1982-10-19 結晶製造方法
DE8383302154T DE3364653D1 (en) 1982-04-15 1983-04-15 Method for producing crystals
EP83302154A EP0092405B1 (en) 1982-04-15 1983-04-15 Method for producing crystals
US06/485,506 US4522680A (en) 1982-04-15 1983-04-15 Method for producing crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57183959A JPS5973490A (ja) 1982-10-19 1982-10-19 結晶製造方法

Publications (2)

Publication Number Publication Date
JPS5973490A true JPS5973490A (ja) 1984-04-25
JPH0135798B2 JPH0135798B2 (enrdf_load_stackoverflow) 1989-07-27

Family

ID=16144808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57183959A Granted JPS5973490A (ja) 1982-04-15 1982-10-19 結晶製造方法

Country Status (1)

Country Link
JP (1) JPS5973490A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623095A (ja) * 1985-06-07 1987-01-09 モリソン・パンプス・エスエイ・（プロプライアタリ−）・リミテツド 結晶生長法
JPH01294599A (ja) * 1988-05-20 1989-11-28 Honda Motor Co Ltd ダイヤモンドの合成法
JPH0255212A (ja) * 1988-08-18 1990-02-23 Mitsubishi Metal Corp 人工ダイヤモンド粉末の製造法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511605A (en) * 1978-07-11 1980-01-26 Tamura Electric Works Ltd Regeneration system for intermediate gradation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511605A (en) * 1978-07-11 1980-01-26 Tamura Electric Works Ltd Regeneration system for intermediate gradation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623095A (ja) * 1985-06-07 1987-01-09 モリソン・パンプス・エスエイ・（プロプライアタリ−）・リミテツド 結晶生長法
JPH01294599A (ja) * 1988-05-20 1989-11-28 Honda Motor Co Ltd ダイヤモンドの合成法
JPH0255212A (ja) * 1988-08-18 1990-02-23 Mitsubishi Metal Corp 人工ダイヤモンド粉末の製造法

Also Published As

Publication number Publication date
JPH0135798B2 (enrdf_load_stackoverflow) 1989-07-27

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