JPS596527A - 高移動度のインジウム−アンチモン系複合結晶薄膜の製造方法 - Google Patents
高移動度のインジウム−アンチモン系複合結晶薄膜の製造方法Info
- Publication number
- JPS596527A JPS596527A JP57116542A JP11654282A JPS596527A JP S596527 A JPS596527 A JP S596527A JP 57116542 A JP57116542 A JP 57116542A JP 11654282 A JP11654282 A JP 11654282A JP S596527 A JPS596527 A JP S596527A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature
- evaporation
- substrate
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57116542A JPS596527A (ja) | 1982-07-05 | 1982-07-05 | 高移動度のインジウム−アンチモン系複合結晶薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57116542A JPS596527A (ja) | 1982-07-05 | 1982-07-05 | 高移動度のインジウム−アンチモン系複合結晶薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS596527A true JPS596527A (ja) | 1984-01-13 |
| JPH0359571B2 JPH0359571B2 (enrdf_load_stackoverflow) | 1991-09-11 |
Family
ID=14689691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57116542A Granted JPS596527A (ja) | 1982-07-05 | 1982-07-05 | 高移動度のインジウム−アンチモン系複合結晶薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS596527A (enrdf_load_stackoverflow) |
-
1982
- 1982-07-05 JP JP57116542A patent/JPS596527A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0359571B2 (enrdf_load_stackoverflow) | 1991-09-11 |
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