JPS5963788A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS5963788A
JPS5963788A JP17324382A JP17324382A JPS5963788A JP S5963788 A JPS5963788 A JP S5963788A JP 17324382 A JP17324382 A JP 17324382A JP 17324382 A JP17324382 A JP 17324382A JP S5963788 A JPS5963788 A JP S5963788A
Authority
JP
Japan
Prior art keywords
layer
active layer
light
type
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17324382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6343909B2 (fr
Inventor
Shinsuke Ueno
上野　眞資
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17324382A priority Critical patent/JPS5963788A/ja
Publication of JPS5963788A publication Critical patent/JPS5963788A/ja
Publication of JPS6343909B2 publication Critical patent/JPS6343909B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
JP17324382A 1982-10-04 1982-10-04 半導体レ−ザ Granted JPS5963788A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17324382A JPS5963788A (ja) 1982-10-04 1982-10-04 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17324382A JPS5963788A (ja) 1982-10-04 1982-10-04 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5963788A true JPS5963788A (ja) 1984-04-11
JPS6343909B2 JPS6343909B2 (fr) 1988-09-01

Family

ID=15956807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17324382A Granted JPS5963788A (ja) 1982-10-04 1982-10-04 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5963788A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345092A (en) * 1991-01-18 1994-09-06 Kabushiki Kaisha Toshiba Light emitting diode including active layer having first and second active regions
US5541950A (en) * 1994-02-22 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser including groove having variable dimensions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser
JPS5636184A (en) * 1979-08-31 1981-04-09 Nec Corp Manufacture of semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser
JPS5636184A (en) * 1979-08-31 1981-04-09 Nec Corp Manufacture of semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345092A (en) * 1991-01-18 1994-09-06 Kabushiki Kaisha Toshiba Light emitting diode including active layer having first and second active regions
US5541950A (en) * 1994-02-22 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser including groove having variable dimensions

Also Published As

Publication number Publication date
JPS6343909B2 (fr) 1988-09-01

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